Difference between revisions of "Wet Chemistry Resources"

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*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Lift-Off_Techniques UCSB liftoff guidance]
*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Lift-Off_Techniques UCSB liftoff guidance]
*[https://snf.stanford.edu/SNF/processes/process-modules/photolithography/lift-off-lol-procedures/liftoff Stanford SNF liftoff procedures]


==Electroplating==
==Electroplating==

Revision as of 00:34, 4 November 2019

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Sample Cleaning Resources

Solvent Cleans

Etching Cleans

Caution. All of these processes require a buddy and adequate chemical safety training.

RCA-1

Prepares wafers for high-temperature processing steps. Standardized protocol developed by RCA in 1960s.

Piranha Etch

Strong oxidant solution, removes organics and some metals from surfaces and reestablishes oxidized surface. If there is significant organic contamination, perform solvent clean prior.

HF Dip

Removes native oxide from surfaces.

Plasma Cleans

Plasma cleaning via oxygen, argon, etc. may be the more optimal choice for certains samples such as fragile membranes. More information can be found on the tool page for the Tergeo Plus Plasma Cleaner.

Wet Etching Resources

Research Papers and Books

External Laboratories

Commercial Materials

KNI Wet Etch Recipes Table

Table of Wet Etch recipes from KNI Papers

And general table from you, not from papers, maybe from recipes?

Material Etchant Rate (nm/min) Anisotropy Selective to Selectivity Origin and Notes
KNI CHA Al Al Etch Type D ~1000 Highly Al High Matches Transene's expected rate
KNI PECVD 350°C SiO2 HF ~1000 Highly SiO2 High measured 10/19
KNI PECVD 350°C Si3N4 Ex ~1000 Highly SiN3 High measured 10/19
KNI PECVD a-Si KOH ~1000 Highly Si High Link to KNI member's research paper

Other Procedures

Liftoff

Electroplating

Safety Resources