Difference between revisions of "Tergeo Plus ICP- & CCP-RIE: Oxygen & Argon Plasma Cleaner"

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== Description ==
== Description ==
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The Tergeo Plus is an easy-to-operate, versatile plasma cleaner that can operate in a number of different modes using a range of gases. Currently, only oxygen and argon gases are hooked up to the instrument, which are suitable for many sample cleaning and resist ashing (i.e. resist removal) applications, though a third gas connection exists if there is a need to use another gas (e.g. hydrogen for plasma cleaning with a reducing environment). This cleaner can be operated in Direct Mode (aka Immersion Mode), which involves striking an inductively-coupled plasma (ICP) directly in the sample chamber, or Remote Mode (aka Indirect Mode), which involves striking a capacitively-coupled plasma (CCP) in a remote chamber. The Remote Mode is the more gentle cleaning mode because it only allows neutral species to make their way into the chamber and participate in cleaning by means of chemical reaction (e.g. oxygen radicals react with surface hydrocarbons to create volatile species like CO and CO<sub>2</sub> that can then be removed via the vacuum). Low power modes can also be achieved in either Direct or Remote Mode by varying the pulsing ratio. See below for the full list of resources related to this instrument.
===== Type1 Applications =====
===== Applications =====
* Application1
* Remove hydrocarbons from SEM & FIB samples to prevent "black box" effect from happening while imaging, using O<sub>2</sub> or O<sub>2</sub>/Ar plasma
* Application2
* Remove residual resist from developed lithography processes (aka "descumming" of the substrate surface), using O<sub>2</sub> or O<sub>2</sub>/Ar plasma
* Application3
* Sputter away small amounts of surface materials using high-power Ar plasma
===== Type2 Applications =====
* Activate the surface of PDMS polymer to make it adhesive to e.g. glass slides, for use in microfluidic device fabrication
* Application1
* Running a hydrogen plasma has not yet been tried but could theoretically clean e.g. graphene without oxidizing it (O<sub>2</sub> plasma would)
* Application2
* Any other process that requires the non-directional removal of material by reactive-ion plasma
* Application3


== Resources ==
== Resources ==
===== SOPs & Troubleshooting =====
===== SOP =====
* SOP Type  ([https://caltech.box.com/s/4yv8f5att77k3zq1rm6p0mqhkd8quslh Short Version] | [https://caltech.box.com/s/xwjdudqdl793gkc5kl71zez5nnc5y2xb Long Version])
* [https://caltech.box.com/s/0dkpffpstz2y1mmnywa4br9er07irvsv SOP]
* [https://caltech.box.com/s/1nmp75l3166vj9t1vwwpwu2zyfc4j6ol KNI's SOP]
* [https://caltech.box.com/s/1nmp75l3166vj9t1vwwpwu2zyfc4j6ol Other SOP1]
* [https://caltech.box.com/s/1nmp75l3166vj9t1vwwpwu2zyfc4j6ol Other SOP2]
* [https://caltech.box.com/s/sz9pai0icsntnef6me23veiwtwdui0gm Troubleshooting Guide]
 
===== Video Tutorials =====
* [https://youtu.be/UfF_ljwvepQ Video 1] | [https://youtu.be/luC-5TgNPsQ Video 2]
* Video Series: ([https://youtu.be/YeukVt1Fyi0 Part 1] | [https://youtu.be/WFfOi-rwlbA Part 2] | [https://youtu.be/1syySgnTEqU Part 3])
===== Graphical Handouts =====
===== Graphical Handouts =====
* [https://caltech.box.com/s/14ffgscc39vhrvlyva0jbucsep7j6dvv Handout 1]
* [https://caltech.box.com/s/ics22ljdscnz5zcdct351iw10os97u01 Graphical Handout]
* [https://caltech.box.com/s/kxaxtslwol1o5a276f3lrqbhss8zvwje Handout 2]
===== Video =====
===== Presentations =====
* [https://www.youtube.com/watch?v=UNrwtm6puLs PIE Scientific's Product Overview Video]
* [https://caltech.box.com/s/lulkj0pwm053akyya1shazg8wzgudq9f Presentation 1]
* [https://caltech.box.com/s/f4k8jan85n5lf6f2tutjx4rkfzjq7y68 Presentation 2]
===== Manufacturer Manuals =====
===== Manufacturer Manuals =====
* [https://caltech.box.com/s/og4309108q4k2jwhkaxqtpiujg2al5iu Manual 1]
* [https://caltech.box.com/s/k2dsd20hzq0vu8mhk1oohh4o5hfcdpfq Operating Manual]
* [https://caltech.box.com/s/j0t3w6i53jhfjcva8i4qvlatdh7t1tzw Manual 2]
* [https://caltech.box.com/s/flz7maaqq1k80pdacpqqd9yaps63agjp Quick Start Guide]
===== Note on Cleaning for SEM & FIB Samples =====
* During SEM or FIB imaging, the local specimen area will heat up due to added energy from the beam. If there is organic matter on the surface from a previous process (e.g. solvent treatment) or from simply being exposed to the ambient environment, the heat causes hydrocarbons to evolve from the surface, whereupon they become a precursor gas for an electron-beam- or ion-beam-aided, chemical-vapor-deposition of carbon back onto the surface, now in a denser form. This carburization of the surface often results in a “black box” appearing in areas where the beam was highly concentrated, e.g. where a reduced area window was used for a focusing step (carbon has a low yield of secondary electrons, SEs, and thus the carbon area appears darker). Note that the carburization process happens more quickly at lower e-beam accelerating voltages because the chemical vapor deposition is dependent on the presence of SEs, which are emitted in higher quantities at low voltage. Cleaning a specimen with an O<sub>2</sub> and/or Ar plasma (or H<sub>2</sub> if a reducing environment is necessary to prevent oxidation) will remove the hydrocarbons and prevent this process from happening to a noticeable degree while imaging.


== Specifications ==
== Specifications ==
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* [https://caltech.box.com/s/nmws6w7643ne8mraljjar6c4epw0anpp Manufacturuer Data Sheet]
* [https://caltech.box.com/s/nmws6w7643ne8mraljjar6c4epw0anpp Manufacturuer Data Sheet]
===== Mode 1 Specifications =====
===== Mode 1 Specifications =====
* Voltage Range: 0.5 to 30.0 kV
* Power Range: 1 to 150 W
* Aperture Sizes: 10 mm, 15 mm, 20 mmm, 30 mm
* Pulsing Duty Ratio Range (N/255): 1 to 255, where
* etc.
** Example: With 10 W power, if N=25 then the average power as a function of pulsing would be [10 W * (25/255) = 0.98 W, on average]
===== Mode 2 Specifications =====
* Gas Flow Rates: 0.1 to 100.0 sccm
* Voltage Range: 5.0 to 30.0 kV
* Ultimate Vacuum: <30 mTorr
* Current Range: 10 pA - 20 nA
* etc.

Revision as of 22:37, 6 May 2019

Tergeo Plus Plasma Cleaner
[[image:|320x373px|center|]]
Instrument Type Etching, Microscopy
Techniques Plasma Cleaning,
Direct Mode (ICP),
Remote Mode (CCP)
Staff Manager Matthew S. Hunt, PhD
Staff Email matthew.hunt@caltech.edu
Staff Phone 626-395-5994
Reserve time on LabRunr
Request training by email
Sign up for SEM-FIB email list
Lab Location B203 Steele
Lab Phone 626-395-1542
Manufacturer PIE Scientific
Model {{{Model}}}

Description

The Tergeo Plus is an easy-to-operate, versatile plasma cleaner that can operate in a number of different modes using a range of gases. Currently, only oxygen and argon gases are hooked up to the instrument, which are suitable for many sample cleaning and resist ashing (i.e. resist removal) applications, though a third gas connection exists if there is a need to use another gas (e.g. hydrogen for plasma cleaning with a reducing environment). This cleaner can be operated in Direct Mode (aka Immersion Mode), which involves striking an inductively-coupled plasma (ICP) directly in the sample chamber, or Remote Mode (aka Indirect Mode), which involves striking a capacitively-coupled plasma (CCP) in a remote chamber. The Remote Mode is the more gentle cleaning mode because it only allows neutral species to make their way into the chamber and participate in cleaning by means of chemical reaction (e.g. oxygen radicals react with surface hydrocarbons to create volatile species like CO and CO2 that can then be removed via the vacuum). Low power modes can also be achieved in either Direct or Remote Mode by varying the pulsing ratio. See below for the full list of resources related to this instrument.

Applications
  • Remove hydrocarbons from SEM & FIB samples to prevent "black box" effect from happening while imaging, using O2 or O2/Ar plasma
  • Remove residual resist from developed lithography processes (aka "descumming" of the substrate surface), using O2 or O2/Ar plasma
  • Sputter away small amounts of surface materials using high-power Ar plasma
  • Activate the surface of PDMS polymer to make it adhesive to e.g. glass slides, for use in microfluidic device fabrication
  • Running a hydrogen plasma has not yet been tried but could theoretically clean e.g. graphene without oxidizing it (O2 plasma would)
  • Any other process that requires the non-directional removal of material by reactive-ion plasma

Resources

SOP
Graphical Handouts
Video
Manufacturer Manuals
Note on Cleaning for SEM & FIB Samples
  • During SEM or FIB imaging, the local specimen area will heat up due to added energy from the beam. If there is organic matter on the surface from a previous process (e.g. solvent treatment) or from simply being exposed to the ambient environment, the heat causes hydrocarbons to evolve from the surface, whereupon they become a precursor gas for an electron-beam- or ion-beam-aided, chemical-vapor-deposition of carbon back onto the surface, now in a denser form. This carburization of the surface often results in a “black box” appearing in areas where the beam was highly concentrated, e.g. where a reduced area window was used for a focusing step (carbon has a low yield of secondary electrons, SEs, and thus the carbon area appears darker). Note that the carburization process happens more quickly at lower e-beam accelerating voltages because the chemical vapor deposition is dependent on the presence of SEs, which are emitted in higher quantities at low voltage. Cleaning a specimen with an O2 and/or Ar plasma (or H2 if a reducing environment is necessary to prevent oxidation) will remove the hydrocarbons and prevent this process from happening to a noticeable degree while imaging.

Specifications

Manufacturer Specifications
Mode 1 Specifications
  • Power Range: 1 to 150 W
  • Pulsing Duty Ratio Range (N/255): 1 to 255, where
    • Example: With 10 W power, if N=25 then the average power as a function of pulsing would be [10 W * (25/255) = 0.98 W, on average]
  • Gas Flow Rates: 0.1 to 100.0 sccm
  • Ultimate Vacuum: <30 mTorr