The ORION NanoFab is a focused ion beam (FIB) system capable of generating three different ion beams – helium & neon from the gas field ion source (GFIS) that is aligned on the main optical axis, and gallium offset by 54°, as in a more traditional "dual beam" FIB/SEM (scanning electron microscope). The He beam, which can be formed into a 0.5 nm probe size, is capable of high-resolution imaging, lithography and etching, with each performing in the sub-5 nm regime. The Ne beam, with a 2.0 nm probe size, can etch sub-15 nm features with order-of-magnitude higher volume-removal rates than He, and perform sub-10 nm lithography on resist. The Ga beam, with a 5 nm minimum probe size, can remove relatively large volumes of material by direct etching. In all, the three beams, each operating over large energy ranges, provide multitudes of nanofabrication opportunities in a single system.
Imaging Applications
Ultra-High-Resolution imaging (capable of resolving sub-5 nm features)
High depth of field imaging (compared to SEM)
Image non-conductive specimens using an electron flood gun for charge compensation
Etching Applications
Directly etch patterns into material with all three beams – He, Ne & Ga
Cutting & Imaging Cross-Sections (using Ga)
Final thinning of TEM lamellae (using Ne)
Pattern with Raith ELPHY MultiBeam Pattern Generator or Nanometer Patterning & Visualization Engine (NPVE)
Lithography Applications
High-resolution patterning on resist (35 keV He ions can perform better than 100 keV electrons)
Automatic alignment to markers and automated processing
Resist patterning on non-conductive specimens
Resist Pattering on curved substrates due to high depth of field
Pattern with Raith ELPHY MultiBeam Pattern Generator or Nanometer Patterning & Visualization Engine (NPVE)
