| ORION NanoFab
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| Lab Location
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B203D Steele
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| Lab Phone
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626-395-1548
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| Manufacturer
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ZEISS (Carl Zeiss AG)
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| Model
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{{{Model}}}
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Description
The ORION NanoFab is a focused ion beam (FIB) system capable of generating three different ion beams – helium & neon from the gas field ion source (GFIS) that is aligned on the main optical axis, and gallium offset by 54°, as in a more traditional "dual beam" FIB/SEM (scanning electron microscope). The He beam, which can be formed into a 0.5 nm probe size, is capable of high-resolution imaging, lithography and etching, with each performing in the sub-5 nm regime. The Ne beam, with a 2.0 nm probe size, can etch sub-15 nm features with order-of-magnitude higher volume-removal rates than He, and perform sub-10 nm lithography on resist. The Ga beam, with a 5 nm minimum probe size, can remove relatively large volumes of material by direct etching. In all, the three beams, each operating over large energy ranges, provide multitudes of nanofabrication opportunities in a single system.
Imaging Applications
- Ultra-High-Resolution imaging (capable of resolving sub-5 nm features)
- High depth of field imaging (compared to SEM)
- Image non-conductive specimens using an electron flood gun for charge compensation
Etching Applications
- Directly etch patterns into material with all three beams – He, Ne & Ga
- Cutting & Imaging Cross-Sections (using Ga)
- Final thinning of TEM lamellae (using Ne)
- Pattern with Raith ELPHY MultiBeam Pattern Generator or Nanometer Patterning & Visualization Engine (NPVE)
Lithography Applications
- High resolution patterning on resist (35 keV He can perform better than 100 keV electrons)
- Automatic alignment to markers and automated processing
- Resist patterning on non-conductive specimens
- Resist Pattering on curved substrates due to high depth of field
- Pattern with Raith ELPHY MultiBeam Pattern Generator or Nanometer Patterning & Visualization Engine (NPVE)
Resources
SOPs & Troubleshooting
Video Tutorials
Graphical Handouts
Presentations
Manufacturer Manuals
Specifications
Manufacturer Specifications
FIB Specifications
- 0.5 to 30.0 kV
- Apertures: 10 mm, 15 mm, 20 mmm, 30 mm
- etc.
Raith ELPHY MultiBeam Specifications
- 5.0 to 30.0 kV
- 10 pA - 20 nA
- etc.
NPVE Specifications
- 5.0 to 30.0 kV
- 10 pA - 20 nA
- etc.
