ORION NanoFab: Helium, Neon & Gallium FIB

ORION NanoFab Instrument Type Microscopy, Lithography Techniques High-Resolution He Imaging, He/Ne/Ga-FIB Etching He & Ne Ion Lithography Charge Compensation (with Electron Flood Gun), Cross-Sectioning Staff Manager Matthew S. Hunt, PhD Staff Email matthew.hunt@caltech.edu Staff Phone 626-395-5994 Reserve time on FBS Request training via FBS User Dashboard Lab Location B203D Steele Lab Phone 626-395-1548 Manufacturer ZEISS (Carl Zeiss AG) Model {{{Model}}}

Description

The ORION NanoFab is a focused ion beam (FIB) system capable of generating three different ion beams – helium & neon from the gas field ion source (GFIS) that is aligned on the main optical axis, and gallium offset by 54°, as in a more traditional "dual beam" FIB/SEM (scanning electron microscope). The He beam, which can be formed into a 0.5 nm probe size, is capable of high-resolution imaging, lithography and etching, with each performing in the sub-5 nm regime. The Ne beam, with a 2.0 nm probe size, can etch sub-15 nm features with order-of-magnitude higher volume-removal rates than He, and perform sub-10 nm lithography on resist. The Ga beam, with a 5 nm minimum probe size, can remove relatively large volumes of material by direct etching. In all, the three beams, each operating over large energy ranges, provide multitudes of nanofabrication opportunities in a single system.

Imaging Applications

• Ultra-High-Resolution imaging (capable of resolving sub-5 nm features)
• High depth of field imaging (compared to SEM)
• Image non-conductive specimens using an electron flood gun for charge compensation

Etching Applications

• Directly etch patterns into material with all three beams – He, Ne & Ga
• Cutting & Imaging Cross-Sections (using Ga)
• Final thinning of TEM lamellae (using Ne)
• Pattern with Raith ELPHY MultiBeam Pattern Generator or Nanometer Patterning & Visualization Engine (NPVE)

Lithography Applications

• High-resolution patterning on resist (35 keV He ions can perform better than 100 keV electrons)
• Automatic alignment to markers and automated processing
• Resist patterning on non-conductive specimens
• Resist Pattering on curved substrates due to high depth of field
• Pattern with Raith ELPHY MultiBeam Pattern Generator or Nanometer Patterning & Visualization Engine (NPVE)

Resources

SOPs & Troubleshooting

• SOP for Basic Operation of ORION NanoFab
• SOP for Operating Raith ELPHY MultiBeam Pattern Generator
• Troubleshooting Guide

Video Tutorials

• Getting Started | Introduction to GFIS Parameters (He- & Ne-FIB)
• GFIS Alignments (He- & Ne-FIB)
• Using the Electron Flood Gun for Charge Compensation
• Eucentric Height: What it means, When to use it & How to get there (recorded for SEM, same principles apply here)
• Cutting & Imaging Cross-sections (Playlist) (recorded on SEM/Ga-FIB)
• Preparing a Trimer (Playlist)

Graphical Handouts

• GFIS Concepts
• GFIS Alignments
• Ga-FIB Concepts

Presentations

• Helium & Neon Focused Ion Beam Microscopy: Principles, Techniques & Applications
• Gallium Focused Ion Beam Microscopy: Principles, Techniques & Applications

Manufacturer Manuals

• Zeiss ORION NanoFab Operation Manual
• Raith ELPHY MultiBeam Pattern Generator Operation Manual
• Nanometer Patterning & Visualization Engine (NPVE) Operation Manual

Specifications

Manufacturer Specifications

• Zeiss ORION NanoFab Product Guide & Data Sheet
• Raith ELPHY MultiBeam Product Guide & Data Sheet

System Specifications

• Eucentric Height: ~9.1 mm working distance (WD)
• Allowable Sample Width: 80 mm (this is the width of the load lock opening)
• Stage Range: ±24 mm X & Y travel, 8 mm Z travel, -10 to 58° tilt, 360° rotation
  • X, Y, Z and R are all driven by piezoelectrics
• ETD Grid Bias Range: -250 to 250 V
• Stage Bias Range: -500 to 500 V
• Ultimate Vacuum: 2e-7 Torr

He-FIB Specifications

• Minimum Feature Size Resolved with He Imaging: ~3 nm
• Minumum Probe Size: 0.35 nm
• Voltage Range: 5 to 40 kV
• Current Range: 0.1 to 100 pA

Ne-FIB Specifications

• Minimum Feature Size Resolved with Ne Imaging: ~7 nm
• Minumum Probe Size: 1.9 nm
• Voltage Range: 5 to 35 kV
• Current Range: 0.1 to 50 pA

Ga-FIB Specifications

• Minimum Feature Size Resolved with Ga Imaging: ~10 nm
• Minumum Probe Size: 3 nm
• Voltage Range: 1 to 30 kV
• Current Range: 1 pA to 100 nA

Electron Flood Gun Specifications

• Probe Diameter: millimeters (can be roughly focused)
• Voltage Range: 0.025 to 1.0 kV
• Current: ~1 μA
• Dwell Time Range: 50 to 10000 μs

Raith ELPHY MultiBeam Specifications

• Shapes Available: Polygons (area dose), Single Pass Lines (line dose) & Dot Arrays (point dose) of any arbitrary shape
• Import CAD files as .dxf or .gds files
• Writing Speed: 20 MHz
• Digital-to-Analog Converter (DAC): 16-bit