View source for ATC Orion 8: Chalcogenide Sputter System

{{InstrumentInfoboxOneImage|
|InstrumentName = Chalcogenide Sputter System
|HeaderColor = #F2682A
|ImageOne = Orion-8-Chalcogenide-Sputter-System.jpg
|ImageTwo = 
|InstrumentType = [[Equipment_List#Deposition|Deposition]]
|RoomLocation = B235C Steele
|LabPhone = 626-395-1539
|PrimaryStaff = [[Alex Wertheim]]
|StaffEmail = alexw@caltech.edu
|StaffPhone = 626-395-3371
|Manufacturer = AJA International
|Model = ATC Orion 8
|Techniques = Magnetron Sputtering (RF,DC),<br>In-situ Plasma Etch &<br>Surface Cleaning,</br>Reactive Sputtering,<br> Co-Sputtering
|EmailList = kni-sputter
|EmailListName =  Sputter
}}
== Description ==
The AJA UHV Orion chalcogenide sputter system is capable of reaching UHV pressures as low as 1E-10 Torr. It is equipped with a load-lock for fast sample transfer. There are five magnetron guns, three 2" guns and two 3" guns. A total of three RF and one DC power supplies can be used on any of the five guns, some with an internal switch box allowing for one power source to be sequentially routed to different guns, enabling automatic processes without manual cable swapping. Uniformity across a 6" wafer is <5% variation for the 2" guns and <1.5% for the 3" guns. Pre-mixed targets of specific alloys and compounds may be sputtered. In addition, having multiple power supplies allows for co-sputtering of up to four materials simultaneously. Reactive sputtering may be performed by introducing oxygen and/or nitrogen into the chamber during processing, allowing oxides and nitrides to be formed from pure metal targets. Co-sputtering multiple elements in a reactive process can produce complex ceramics. An RF power supply is also present specifically for generating a localized plasma at the substrate; this can be used as a surface cleaner & etcher, for techniques such as ion-assisted deposition, and to assist in the reactive formation of metal-nitrides. This tool is also capable of substrate heating up to 800 &deg;C, which can be used to facilitate reactions, alloying, to control film stress, and to control crystal growth mechanisms. 

===== Reasons to Utilize Sputtering =====
* Ability to synthesize compounds and control compositions
* Wide variety of high quality oxides & nitrides may be synthesized
* Generally produces more uniform, better adhering films when compared to evaporation
* More conformal sidewall coverage for coating patterned substrates
** More conformal than evaporation, less conformal than CVD & ALD

===== Applications =====
* Deposition of metals, dielectrics, and other special elements
** For reactive synthesis of dielectric materials, the [[ATC Orion 8: Dielectric Sputter System | Orion 8 dielectric sputter system]] is better suited
** For sputtering materials such as Te, Bi, Se, and Sb
*** Cr, Mn, Ni, and Fe are excluded from this chamber
* Surface cleaning & in-situ plasma etch

== Resources ==
===== Equipment Status =====
* [https://labrunr.caltech.edu/Equipment_2.aspx LabRunr Equipment Status] (Select Chalc_Sputter from the dropdown menu)

===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/nqpy11vmb3g2feo6km3qcpje52u181wc KNI SOP]
* [https://caltech.box.com/s/z3u5bywcp0vlg4usb73i46v0ggnfuooi Troubleshooting Guide]
* [https://caltech.box.com/s/1wl0hntcbzskq05im9lxdqjl0irtkir2 Sputter gun cable swap instructions]
* [https://caltech.box.com/s/sca3m472qwie0uehx6uv1strte3w2nxx QCM Deposition Rate Measurement Instructions]

=== Tool Reservation Rules ===
{| class="wikitable"
|-
!  !! Advanced Reservation (days) !! Limit per Reservation (hrs) !! Limit per week (hrs)
|-
| Weekday || 7 || 12 || 12
|-
| Weeknight || 7 || 12 || 12
|-
| Weekend || 7 || 24 || 24
|}

===== Process Recipes =====
* [https://caltech.box.com/s/a49yh35hkb2x5qnskivzde0y8z0o4cpn Guide to maintaining a plasma using gradual pressure changes]

===== Video Tutorials =====
* [https://youtu.be/y7JbzNZwZvs KNI Intro to Sputtering Presentation]
* [https://youtu.be/MlxUnwviBiI Dielectric Sputter Training]
** The chalcogenide and dielectric systems are extremely similar; Please see the SOP for some differences
* [https://youtu.be/FlSFfF8C6WQ Advanced Layer Creation - Part 1]
* [https://youtu.be/Ymb-mZGOjgw Advanced Layer Creation - Part 2]

== Specifications ==
===== Hardware Specifications =====
* Ultimate Base Pressure: 1E-10 Torr
* All dry pumping system (cryo & turbo & roots & diaphragm pumps)
* Load-lock-equipped system with manual sample transfer system
* Substrate holder accepts 150 mm samples and smaller
* Substrate heating up to 800 &deg;C provided by backside heating lamps
* Semiconductor grade Ar, N<sub>2</sub>, O<sub>2</sub> process gases
* Five Magnetron sputter guns
** Three confocally-oriented 3" guns (faces substrate at angle)
** Two confocally-oriented 2" guns (faces substrate at angle)  
* Power Supplies: 
** Four RF Supplies
*** One 100 W supply for substrate bias
*** One 600 W 
*** Two 300 W 
** One 1500 W DC Supply
*** Equipped with 2two-position switch router that enables sequential switching between two connected magnetrons



== Related Instrumentation in the KNI ==
===== Sputtering Systems =====
* [[ATC Orion 8: Dielectric Sputter System|ATC Orion 8: Dielectric Sputter System]]
* [[ATC Orion 8: Chalcogenide Sputter System|ATC Orion 8: Chalcogenide Sputter System]]

===== Electron Beam Evaporation Systems =====
* [[Labline: Electron Beam Evaporator|Labline: Electron Beam Evaporator]]
* [[CHA: Electron Beam Evaporator|CHA: Electron Beam Evaporator]]

===== Chemical Vapor Deposition =====
* [[FlexAL II: Atomic Layer Deposition (ALD)|FlexAL II: Atomic Layer Deposition (ALD)]]
* [[Plasma-Enhanced Chemical Vapor Deposition (PECVD)|Plasma-Enhanced Chemical Vapor Deposition (PECVD)]]