Guide to Choosing KNI SEMs & FIBs

This is a basic guide for choosing which scanning electron microscope (SEM) and

If you only need low mag images, e.g. with a 4 um field of view (FOV) or larger (i.e. if you're only using “Field Free Mode” aka “Normal Mode"):

 1. Quanta: optimal objective lens placement yields best field-free imaging, quick chamber pump/vent times; backscattered electron detector for best Z contrast imaging
 2. Nova 200 or Sirion: having an immersion lens means the field-free objective lens is not optimally placed for low mag imaging, though still works fine; these SEMs provide the benefit of being able to switch to immersion mode for higher resolution if/when needed
 3. Nova 600 or ORION: generally leave FIBs for FIB-related work and/or highest-resolution imaging; more expensive than SEMs

If you need high mag images with less than 4 um FOV (i.e. if you're using “Immersion Mode” aka “Ultra High Resolution (UHR) Mode”):

 1. Nova 200 (longer pump times) or Sirion (shorter pump times): high resolution but limited depth of field e.g. when tilting
 2. ORION (quick sample transfer via load lock): maintains great depth of field at high resolution with He imaging
 3. Nova 600: Use for high-resolution imaging if also incorporating FIB (e.g. imaging cross-sections)

If you need images with less than 2 um FOV:

  1. Nova 200: limited depth of field, can image as small as ~800 nm FOV, cheapest option
  2. ORION: maintains depth of field, can image as small as ~300 nm FOV
  3. Sirion is not quite as good as Nova 200 at these FOVs; Nova 600 works well at this FOV, but is more expensive than Nova 200 and Sirion

If you need to use Ga-FIB:

 1. Nova 600 for cross-sections, TEM sample prep, point & shoot etching tasks, Pt dep, minor automation via scripting
 2. ORION for major automation (Raith software), cross-sectioning without Pt protection layer  

If you want to perform Lithography on Resist (without stitching):

 1. Electron beam lithography on Quanta: As small as 15 nm features at 30 kV
 2. Helium ion beam lithography on ORION: As small as 5 nm features at 35 kV (best when used on very thin resist)

See attached “Functionality of SEMs & FIBs” slide for other specifics (e.g. EDS, Probe Station, Omniprobe, etc.)

Also see the KNI's microscopy lectures for more details