Difference between revisions of "DRIE: Bosch & Cryo ICP-RIE for Silicon"

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===== Process Documents =====
===== Process Documents =====
* [https://caltech.box.com/s/3n21r2o30u476ppnxfp657o3zbs9f0on Process Standards]
* [https://caltech.box.com/s/3n21r2o30u476ppnxfp657o3zbs9f0on Process Standards]
* [https://caltech.box.com/s/z3ibiol0xp1qwi6cyvnghbxs81p8j5q5 Silicon Waveguide Etch]
* [https://caltech.box.com/s/k8gj2bcluhy50in9m2hwz379hnkn9bdw Silicon Nitride etch]
* [https://caltech.box.com/s/4e6rskkmv1sgu9ipgfnrzeq0cguo1gc0 Hard Mask Oxide Etch]


===== Video Tutorials =====
* [https://youtu.be/UfF_ljwvepQ Video 1] | [https://youtu.be/luC-5TgNPsQ Video 2]
* Video Series: ([https://youtu.be/YeukVt1Fyi0 Part 1] | [https://youtu.be/WFfOi-rwlbA Part 2] | [https://youtu.be/1syySgnTEqU Part 3])
===== Graphical Handouts =====
* [https://caltech.box.com/s/14ffgscc39vhrvlyva0jbucsep7j6dvv Handout 1]
* [https://caltech.box.com/s/kxaxtslwol1o5a276f3lrqbhss8zvwje Handout 2]
===== Presentations =====
* [https://caltech.box.com/s/lulkj0pwm053akyya1shazg8wzgudq9f Presentation 1]
* [https://caltech.box.com/s/f4k8jan85n5lf6f2tutjx4rkfzjq7y68 Presentation 2]
===== Manufacturer Manuals =====
===== Manufacturer Manuals =====
* [https://caltech.box.com/s/og4309108q4k2jwhkaxqtpiujg2al5iu Manual 1]
* [https://caltech.box.com/s/tfieodeis71aligdpgp3g13kuceefnh0 Oxford Plasmalab System 100 DRIE Manual]
* [https://caltech.box.com/s/j0t3w6i53jhfjcva8i4qvlatdh7t1tzw Manual 2]
* [https://caltech.box.com/s/gclvux5tu28rpssvwncx5sm518uhmebl Edwards QDP 80 dry vacuum pump Manual]


== Specifications ==
== Specifications ==

Revision as of 21:03, 22 May 2019

DRIE
Silicon-Microcones Paul-A-Kempler.jpg
Instrument Type Etching
Techniques Bosch, Cryogenic etch of silicon
Staff Manager Nathan S. Lee
Staff Email nathslee@caltech.edu
Staff Phone 626-395-1319
Reserve time on LabRunr
Request training by email
Sign up for Oxford ICP email list
Lab Location B235 Steele
Lab Phone 626-395-1532
Manufacturer Oxford Instruments
Model {{{Model}}}
DRIE Bosch-and-Cryo ICP–RIE.jpg

Description

The MEMS / Bosch / Cryo Inductively Coupled Plasma Reactive Ion Etch (ICP-RIE) is is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for silicon etching. This system is configured for deep reactive ion etching (DRIE) via the Bosch process, allowing silicon etching with C4F8 and SF6 gases. Close-coupled gas pods are included in this system for fast Bosch switching; this allows the etching of bulk silicon for MEMS applications with etch rates of approximately 10-25 micrometers/minute. The silicon ICP-RIE has a variable temperature stage (-150 to 400 °C) to permit cryogenic etching of silicon with SF6 and O2 if needed. This system supports wafer sizes up to 6 inches, and provides accurate deep etching capabilities for silicon only.

Applications
  • Deep silicon etch using Bosch process
  • Cryogenic etch of silicon
  • pseudo-Bosch of silicon
Allowed material in DRIE
  • Si, SixNy, SiO2, Ge
  • PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3 hard masks
  • Buried/backside metal ok if never exposed (not an etch stop)
DRIE Gas List
  • SF6
  • C4F8
  • O2
  • Ar
  • N2

Resources

SOPs & Troubleshooting
Process Documents
Manufacturer Manuals

Specifications

Manufacturer Specifications
Mode 1 Specifications
  • Voltage Range: 0.5 to 30.0 kV
  • Aperture Sizes: 10 mm, 15 mm, 20 mmm, 30 mm
  • etc.
Mode 2 Specifications
  • Voltage Range: 5.0 to 30.0 kV
  • Current Range: 10 pA - 20 nA
  • etc.