Tkimoto: Created page with "{{InstrumentInfoboxOneImage| |InstrumentName = PECVD |HeaderColor = #F2682A |ImageOne = PECVD_Oxford-System-100.jpg |ImageTwo = |InstrumentType = Deposition |RoomLocation = B235 Steele |LabPhone = 626-395-1532 |PrimaryStaff = Kelly McKenzie |StaffEmail = kmmckenz@caltech.edu |StaffPhone = 626-395-5732 |Manufacturer = Oxford Instruments |Model = PlasmaPro System 100 |Techniques = Amorphous Silicon Deposition,
Silicon Dioxide Depositio..."

2026-01-22T22:20:20Z

Created page with "{{InstrumentInfoboxOneImage| |InstrumentName = PECVD |HeaderColor = #F2682A |ImageOne = PECVD_Oxford-System-100.jpg |ImageTwo = |InstrumentType = Deposition |RoomLocation = B235 Steele |LabPhone = 626-395-1532 |PrimaryStaff = Kelly McKenzie |StaffEmail = kmmckenz@caltech.edu |StaffPhone = 626-395-5732 |Manufacturer = Oxford Instruments |Model = PlasmaPro System 100 |Techniques = Amorphous Silicon Deposition, Silicon Dioxide Depositio..."

New page

{{InstrumentInfoboxOneImage|
|InstrumentName = PECVD
|HeaderColor = #F2682A
|ImageOne = PECVD_Oxford-System-100.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Deposition|Deposition]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-5732
|Manufacturer = Oxford Instruments
|Model = PlasmaPro System 100
|Techniques = Amorphous Silicon Deposition, Silicon Dioxide Deposition, Silicon Nitride Deposition
|EmailList = kni-oxfordpecvd
|EmailListName = Oxford PECVD
}}
== Description ==
The Plasma-Enhanced Chemical Vapor Deposition (PECVD) system is an Oxford Instruments Plasma Technology Plasmalab System 100 platform that is optimized for amorphous silicon, silicon dioxide, and silicon nitride deposition. The PECVD has a variable temperature stage (RT to 600 °C). This system supports wafer sizes up to 6 inches, and provides PECVD film growth over a wide range of process conditions.
===== Applications =====
* Amorphous Silicon Deposition
* Silicon Dioxide Deposition
* Silicon Nitride Deposition
===== Allowed material in PECVD System =====
* Si, SixNy, SiO2, SOI
* Hard masks compatible with process temperature
===== PECVD Gas List =====
* 5% SiH4 in N2
* 5% SiH4 in Ar
* NH3
* N2O
* N2
* Mixture of CF4 and O2 (4:1) for Plasma Clean

== Resources ==
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/c8qx3ikzjb05x44o4updpqs36ra39ytw KNI SOP]
* [https://caltech.box.com/s/0gh89zgxkchj8nkbl1bbrdgvspu31obc Oxfords reservation and use policy]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]

===== Process Documents =====
* [https://caltech.box.com/s/qnxzioeoudzbnow9aopguf9xkysxsey3 KNI's Amorphous Silicon recipe]
* [https://caltech.box.com/s/gy10uau7tikhvhakgpjvlzalb7boavbv KNI's 350C SiO2 recipe]
* [https://caltech.box.com/s/0e14n82o7o9yziqmlygkakfcv1lp65iu Process Standards]
* [https://caltech.box.com/s/6b2ivuuguflqjaqby5werlcslmmudryf High rate SiOx]
* [https://caltech.box.com/s/vi6vb1nz8thm3sflt5ncoyhi62tomi82 High rate SiNx]
* [https://caltech.box.com/s/tc4j0yr2jazv0rd6ey22ri8jd1asl326 Low Rate SiOx]
* [https://caltech.box.com/s/r3socf5rslp7qs9rb5o7vvpyp12qf0ps Low rate SiNx]
* [https://caltech.box.com/s/6acyh95hslt0q711makbllgqjrexpew1 Amorphous Silicon Deposition (Silane/helium)]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/116/System%20Manual%20for%20Caltech%2094-219848.pdf Oxford PECVD System Manual]
* [https://caltech.box.com/s/zqfonyv64m2m76mo8b4xn63ljz9ee4i5 Alcatel ADS 602P dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/kvgp7d7zx9gczapf7iun791m234vevod Manufacturer Data Sheet]
===== System Features =====
* Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* PECVD process chamber with 160 mm pumping port, view port, and an additional rear port for optical emission end-point-detection
* Heated upper electrode to prevent condensation of low vapor pressure precursors
* PECVD 205 mm electrically heated (700 °C) lower electrode with central wafer lift mechanism
* Parameter ramping software
* 5 Torr capacitance manometer for process control, and penning for base pressure measurement
* Process chamber pumping with 63 mm branch to APC, and isolation valve; chamber base pressure turbo, backed by a refurbished dry pump with roots
* Twelve line gas pod with two non-toxic and three toxic digital mass-flow-controlled gas lines and cleaning gas
* Chamber Gas ring, with split gas manifold
* Liquid vapor delivery system
* Single-wafer automatic insertion load lock with soft pump option
===== System Specifications =====
* Chamber wall heating 80 °C
* 30/300 W RF generator close-coupled to the upper electrode through an automatic matching unit; the generator is configured to operate in a low-power mode (0-30 W) for higher accuracy during low-rate deposition processes
* 600 W solid-state 50-460 kHz LF generator

== Related Instrumentation in the KNI ==
===== Sputtering Systems =====
* [[ATC Orion 8: Dielectric Sputter System|ATC Orion 8: Dielectric Sputter System]]
* [[ATC Orion 8: Chalcogenide Sputter System|ATC Orion 8: Chalcogenide Sputter System]]

===== Electron Beam Evaporation Systems =====
* [[Labline: Electron Beam Evaporator|Labline: Electron Beam Evaporator]]
* [[CHA: Electron Beam Evaporator|CHA: Electron Beam Evaporator]]

===== Chemical Vapor Deposition =====
* [[FlexAL II: Atomic Layer Deposition (ALD)|FlexAL II: Atomic Layer Deposition (ALD)]]
* [[Plasma-Enhanced Chemical Vapor Deposition (PECVD)|Plasma-Enhanced Chemical Vapor Deposition (PECVD)]]

Oxide/Nitride Deposition: Oxford Instruments PlasmaPro System 100 PECVD - Revision history