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LabRunr Information - Revision history
2026-06-29T05:23:44Z
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Derose: Instructions and resources to use LabRunr equipment scheduling, tracking, and billing system
2021-07-22T18:35:03Z
<p>Instructions and resources to use LabRunr equipment scheduling, tracking, and billing system</p>
<p><b>New page</b></p><div>=Sample Cleaning Resources=<br />
<br />
*[https://www.sciencedirect.com/book/9780323510844/handbook-of-silicon-wafer-cleaning-technology#book-description Handbook of Silicon Wafer Cleaning Technology]<br />
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*[https://www.microsi.com/silicon-wafer-cleaning/ UC Irvine Cleaning Procedures for Silicon]<br />
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*[https://cleanroom.byu.edu/clean BYU Substrate Cleaning Guide]<br />
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*https://www.microsi.com/silicon-wafer-cleaning/<br />
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==Solvent Cleans==<br />
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*[https://www-s.mechse.uiuc.edu/cleanroom/files/Procedures/Process/Wafer%20Cleaning%20Procedure%20V1.0.pdf UIUC Wafer Cleaning Procedure]<br />
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*'''Acetone, IPA''' -Acetone serves as a solvent for organics, IPA cleans remaining residues due to acetone's high evaporation rate<br />
*'''Acetone, Methanol''' -Similar to above except Methanol is more toxic, and a polar molecule versus IPA which is non-polar<br />
*'''Acetone, Methanol, IPA'''<br />
*'''Acetone, Methanol, IPA, DI Water'''<br />
*'''Remover PG (60°C), IPA''' -Caution, low flashpoint, do not leave unattended<br />
**Nano Remover PG Spec Sheet<br />
**[https://static1.squarespace.com/static/57b26cc76b8f5b7524bf9ed2/t/57f9725d725e25a7b5dd12fe/1475965533625/Remover-PG-Process.pdf Columbia University Remover PG Process]<br />
*'''Dichloromethane, IPA''' -Caution, high evaporation rate may leave residue and beakers quickly condense water/ice<br />
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==Etching Cleans==<br />
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Caution. All of these processes require a buddy and adequate chemical safety training.<br />
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===RCA Clean===<br />
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Prepares wafers for high-temperature processing steps. Standardized protocol developed by RCA in 1960s.<br />
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*https://en.wikipedia.org/wiki/RCA_clean<br />
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===Nanostrip Etch===<br />
Strong oxidant solution, removes organics and some metals from surfaces and reestablishes oxidized surface. If there is significant organic contamination, perform solvent clean prior.<br />
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*'''Nanostrip (60°C)''' -Rinse with DI<br />
**https://www.seas.upenn.edu/~nanosop/Nanostrip_SOP.htm<br />
**https://braungroup.beckman.illinois.edu/files/2018/02/SOP_BI-005_Nanostrip.pdf<br />
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===Piranha Etch===<br />
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Strong oxidant solution, removes organics and some metals from surfaces and reestablishes oxidized surface. If there is significant organic contamination, perform solvent clean prior.<br />
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*[http://lnf-wiki.eecs.umich.edu/wiki/Piranha_Etch UMich LNF Piranha Etch]<br />
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*[https://www.chemistry.mcmaster.ca/moran-mirabal/resources/PIRANHA-CLEAN-5-2014.pdf McMaster University Piranha Etch]<br />
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*[https://www.bu.edu/photonics/files/2011/02/Piranha_clean.pdf Boston University Piranha Etch]<br />
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*[https://mmrc.caltech.edu/Safety/SOPs/Piranha%20Etch%20SOP.pdf Caltech MMRC Piranha Etch]<br />
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===HF Dip===<br />
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Removes native oxide from surfaces.<br />
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*[https://www.inrf.uci.edu/wordpress/wp-content/uploads/sop-wet-hf-2-percent-dip.pdf UCI Irvine HF 2% Dip]<br />
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*[http://www.nanofab.ubc.ca/processes/cleaning/boe-buffered-oxide-etch-and-hf-dip/ UBC BOE Etch and HF Dip]<br />
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==Plasma Cleans==<br />
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Plasma cleaning via oxygen, argon, etc. may be the more optimal choice for certains samples such as fragile membranes. More information can be found on the tool page for the [[Tergeo Plus ICP- & CCP-RIE: Oxygen & Argon Plasma Cleaner | Tergeo Plus Plasma Cleaner.]]<br />
<br />
=Wet Etching Resources=<br />
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==Reference Articles and Texts==<br />
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*[http://ieeexplore.ieee.org/abstract/document/546406/ Etch Rates for Micromachining Processing]<br />
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*[https://ieeexplore.ieee.org/document/1257354 Etch Rates for Micromachining Processing-Part II]<br />
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*[https://vector.umd.edu/images/links/Handbook_of_Metal_Etchants.pdf Handbook of Metal Etchants]<br />
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==External Laboratories==<br />
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*[https://cleanroom.byu.edu/wet_etch BYU Etching list]<br />
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*[http://lnf-wiki.eecs.umich.edu/wiki/Wet_etching UMich Wet Etching info]<br />
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*[https://cleanroom.byu.edu/chemical_etching.html BYU Etching Guidance]<br />
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*[https://www.nanotech.ucsb.edu/wiki/index.php/Wet_Etching_Recipes UCSB Wet Etching Recipes]<br />
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*[https://nanolab.berkeley.edu/public/manuals/process_manual.shtml Berkeley Marvell Nanofab Process Manual]<br />
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*[https://cleanroom.byu.edu/KOH BYU KOH processing]<br />
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*[https://www.inrf.uci.edu/wordpress/wp-content/uploads/sop-wet-anisotropic-si-etch-using-koh.pdf UC Irvine KOH Etching]<br />
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*[https://www.nanofab.ualberta.ca/wp-content/uploads/downloads/2016/07/KOH-Etching-Info-2013_V2.pdf U Alberta KOH Etching]<br />
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==Commercial Materials==<br />
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*[http://transene.com/etch-compatibility/ Transene Etch Compatibility Chart]<br />
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*[https://transene.com/etchants/ Transene Etchant List]<br />
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*[https://www.microchemicals.com/downloads/application_notes.html MicroChemicals trove of application notes]<br />
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==KNI Wet Etch Recipes Table==<br />
<br />
{| class="wikitable sortable"<br />
|-<br />
! Material !! Etchant !! Rate (nm/min) !! Anisotropy !! Selective to !! Selectivity !! Origin and Notes <br />
|-<br />
| [[CHA: Electron Beam Evaporator |KNI CHA]] Al|| Al Etch Type A|| X || - || Al || Good || Matches Transene's expected rate<br />
|-<br />
| [[CHA: Electron Beam Evaporator |KNI CHA]] Al|| Al Etch Type D|| X || - || Al || High || Matches Transene's expected rate<br />
|-<br />
| [[CHA: Electron Beam Evaporator |KNI CHA]] Al<sub>2</sub>O<sub>3</sub>|| Phosphoric Acid || X || - || - || - || Measured 11/19 by<br />
|-<br />
| [[Wet thermal Oxidation | KNI Tystar Furnace ]] 1000°C SiO<sub>2</sub> || HF || 111 || Very Low || SiO<sub>2</sub> || High || Measured 11/19 by Alex Wertheim<br />
|-<br />
| [[Plasma-Enhanced Chemical Vapor Deposition (PECVD) | KNI PECVD ]] 350°C SiO<sub>2</sub> || HF || 486 || Low || SiO<sub>2</sub> || High || Measured 11/19 by Alex Wertheim<br />
|-<br />
| [[Plasma-Enhanced Chemical Vapor Deposition (PECVD) | KNI PECVD ]] 200°C SiO<sub>2</sub> || HF || 1398 || High || SiO<sub>2</sub> || High || Measured 11/19 by Alex Wertheim<br />
|-<br />
| [[Plasma-Enhanced Chemical Vapor Deposition (PECVD) | KNI PECVD ]] 350°C Si<sub>3</sub>N<sub>4</sub>|| Phosphoric Acid || X || - || - || - || Measured 11/19 by<br />
|-<br />
| [[Plasma-Enhanced Chemical Vapor Deposition (PECVD) | KNI PECVD ]] a-Si|| KOH || X || High || Si || High || Link here to KNI member's research paper<br />
|}<br />
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=Other Procedures=<br />
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==Liftoff==<br />
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*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Lift-Off_Techniques UCSB liftoff guidance]<br />
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*[https://snf.stanford.edu/SNF/processes/process-modules/photolithography/lift-off-lol-procedures/liftoff Stanford SNF liftoff procedures]<br />
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==Electroplating==<br />
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*[https://www.technic.com/chemistry Technic electroplating materials supplier]<br />
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=Safety Resources=<br />
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*[[Lab Rules & Safety | KNI Lab Rules & Safety]]<br />
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*[https://cleanroom.byu.edu/acid_safety BYU Acid Safety], [https://cleanroom.byu.edu/HF_safety HF Safety], [https://cleanroom.byu.edu/solvent_safety Solvent Safety]</div>
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