The KNI Lab at Caltech - Recent changes [en]

Oxide/Nitride Deposition: Oxford Instruments PlasmaPro System 100 PECVD

Kmmckenz — Wed, 21 Oct 2026 19:37:45 GMT

System Features

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	}}		}}
	== Description ==		== Description ==
	The Plasma-Enhanced Chemical Vapor Deposition (PECVD) system is an Oxford Instruments Plasma Technology ~~Plasmalab~~ System 100 platform that is optimized for ~~amorphous silicon,~~ silicon dioxide, and silicon nitride deposition. The PECVD has a variable temperature stage (RT to 600 °C). This system supports wafer sizes up to 6 inches, and provides PECVD film growth over a wide range of process conditions.		The Plasma-Enhanced Chemical Vapor Deposition (PECVD) system is an Oxford Instruments Plasma Technology PlasmaPro System 100 platform that is optimized for silicon dioxide and silicon nitride deposition. The PECVD has a variable temperature stage (RT to 600 °C). This system supports wafer sizes up to 6 inches, and provides PECVD film growth over a wide range of process conditions.
	===== Applications =====		===== Applications =====
	* Amorphous Silicon Deposition
	* Silicon Dioxide Deposition		* Silicon Dioxide Deposition
	* Silicon Nitride Deposition		* Silicon Nitride Deposition
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	* Si, Si<sub>x</sub>N<sub>y</sub>, SiO<sub>2</sub>, SOI		* Si, Si<sub>x</sub>N<sub>y</sub>, SiO<sub>2</sub>, SOI
	* Hard masks compatible with process temperature		* Hard masks compatible with process temperature
			* Other materials buried in stack
	===== PECVD Gas List =====		===== PECVD Gas List =====
	* 5% SiH<sub>4</sub> in N<sub>2</sub>		* 5% SiH<sub>4</sub> in N<sub>2</sub>
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	* N<sub>2</sub>O		* N<sub>2</sub>O
	* N<sub>2</sub>		* N<sub>2</sub>
	* ~~Mixture of CF<sub>4</sub> and O<sub>2</sub>~~ (~~4:1~~) ~~for Plasma Clean~~		* CF4 (for plasma clean)

	== Resources ==		== Resources ==
	===== SOPs & Troubleshooting =====		===== SOPs & Troubleshooting =====
	* [https://caltech.box.com/s/~~c8qx3ikzjb05x44o4updpqs36ra39ytw~~ KNI SOP]		* [https://caltech.box.com/s/zowed19nz12hdxtfxuep3h936jj36yhs KNI SOP]
	* [https://caltech.box.com/s/0gh89zgxkchj8nkbl1bbrdgvspu31obc Oxfords reservation and use policy]		* [https://caltech.box.com/s/0gh89zgxkchj8nkbl1bbrdgvspu31obc Oxfords reservation and use policy]
	* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]		* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]
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	===== Process Documents =====		===== Process Documents =====
	* [https://caltech.box.com/s/qnxzioeoudzbnow9aopguf9xkysxsey3 KNI's Amorphous Silicon recipe]
	* [https://caltech.box.com/s/gy10uau7tikhvhakgpjvlzalb7boavbv KNI's 350C SiO2 recipe]		* [https://caltech.box.com/s/gy10uau7tikhvhakgpjvlzalb7boavbv KNI's 350C SiO2 recipe]
	* [https://caltech.box.com/s/0e14n82o7o9yziqmlygkakfcv1lp65iu Process Standards]		* [https://caltech.box.com/s/0e14n82o7o9yziqmlygkakfcv1lp65iu Process Standards]
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	* [https://caltech.box.com/s/tc4j0yr2jazv0rd6ey22ri8jd1asl326 Low Rate SiOx]		* [https://caltech.box.com/s/tc4j0yr2jazv0rd6ey22ri8jd1asl326 Low Rate SiOx]
	* [https://caltech.box.com/s/r3socf5rslp7qs9rb5o7vvpyp12qf0ps Low rate SiNx]		* [https://caltech.box.com/s/r3socf5rslp7qs9rb5o7vvpyp12qf0ps Low rate SiNx]
	* [https://caltech.box.com/s/6acyh95hslt0q711makbllgqjrexpew1 Amorphous Silicon Deposition (Silane/helium)]
	* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]

	===== Manufacturer Manuals =====		===== Manufacturer Manuals =====
	* [https://~~labrunr~~.~~caltech~~.~~edu/machinefiles~~/~~116~~/~~System%20Manual%20for%20Caltech%2094-219848.pdf~~ Oxford PECVD System Manual]		* [https://caltech.box.com/s/ivcayqzwzha33hag4xd64fb42ma0ithk Oxford PECVD System Manual]
			* [https://caltech.box.com/s/r2d8bk8mrtxa2qf0bwamuxn43cpjml4f PTIQ User Manual]
	* [https://caltech.box.com/s/zqfonyv64m2m76mo8b4xn63ljz9ee4i5 Alcatel ADS 602P dry vacuum pump Manual]		* [https://caltech.box.com/s/zqfonyv64m2m76mo8b4xn63ljz9ee4i5 Alcatel ADS 602P dry vacuum pump Manual]

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	* [https://caltech.box.com/s/kvgp7d7zx9gczapf7iun791m234vevod Manufacturer Data Sheet]		* [https://caltech.box.com/s/kvgp7d7zx9gczapf7iun791m234vevod Manufacturer Data Sheet]
	===== System Features =====		===== System Features =====
	* ~~Universal base console~~ that ~~houses~~ the electronic sub systems, control units, pneumatics, and turbomolecular pump		* Process module frame and separate control rack that house the electronic sub systems, control units, pneumatics, and turbomolecular pump
	* ~~PC 2000 Operating~~ system		* PTIQ operating system
	* PECVD process chamber with 160 mm pumping port, view port, and an additional rear port for optical emission end-point-detection		* PECVD process chamber with 160 mm pumping port, view port, and an additional rear port for optical emission end-point-detection
	* Heated upper electrode to prevent condensation of low vapor pressure precursors		* Heated upper electrode to prevent condensation of low vapor pressure precursors

Equipment List

Kmmckenz — Wed, 21 Oct 2026 19:14:26 GMT

Dry Etching

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	* [[ICP-RIE: III-V, Metal & Silicon Etcher \| III-V Material, Metal & Silicon Etcher: Oxford Instruments System 100 ICP-RIE]]		* [[ICP-RIE: III-V, Metal & Silicon Etcher \| III-V Material, Metal & Silicon Etcher: Oxford Instruments System 100 ICP-RIE]]
	* [[ICP-RIE: Dielectric Etcher \| Dielectric Material Etcher: Oxford Instruments Dielectric System 100 ICP-RIE]]		* [[ICP-RIE: Dielectric Etcher \| Dielectric Material Etcher: Oxford Instruments Dielectric System 100 ICP-RIE]]
			* [[III-V Etcher and Atomic Layer Etching (ALE): Oxford Instruments PlasmaPro 100 Cobra 300 ICP-RIE with ALE]]
	<!---* [[Dual Chamber RIE: Silicon, III-V Material & Organics Etcher \| Silicon, III-V Material & Organics Etcher: Plasma-Therm Dual Chamber RIE]]--->		<!---* [[Dual Chamber RIE: Silicon, III-V Material & Organics Etcher \| Silicon, III-V Material & Organics Etcher: Plasma-Therm Dual Chamber RIE]]--->
	* [[Tergeo Plus ICP- & CCP-RIE: Oxygen & Argon Plasma Cleaner \| Oxygen & Argon Plasma Cleaner: PIE Scientific Tergeo Plus ICP- & CCP-RIE]]		* [[Tergeo Plus ICP- & CCP-RIE: Oxygen & Argon Plasma Cleaner \| Oxygen & Argon Plasma Cleaner: PIE Scientific Tergeo Plus ICP- & CCP-RIE]]

III-V Etcher and Atomic Layer Etching (ALE): Oxford Instruments PlasmaPro 100 Cobra 300 ICP-RIE with ALE

Kmmckenz — Wed, 21 Oct 2026 19:13:13 GMT

SOPs & Troubleshooting

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	== Resources ==		== Resources ==
	===== SOPs & Troubleshooting =====		===== SOPs & Troubleshooting =====
	* ~~General Use~~ SOP		* [https://caltech.box.com/s/4plzcvkt78lnrn73c9kneopbkemrrrq7 Cobra Etcher SOP]
	* [https://caltech.box.com/s/681uz0b8zsv6ivy43a5ggsoydp5zlyza Oxfords reservation and use policy]		* [https://caltech.box.com/s/681uz0b8zsv6ivy43a5ggsoydp5zlyza Oxfords reservation and use policy]
	* Etcher toxic gas handling SOP
	* Power Up Oxford ICP-RIE SOP

	===== Process Documents =====		===== Process Documents =====
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	===== Manufacturer Manuals =====		===== Manufacturer Manuals =====
	* [https://caltech.box.com/s/r2d8bk8mrtxa2qf0bwamuxn43cpjml4f PTIQ User Manual]		* [https://caltech.box.com/s/r2d8bk8mrtxa2qf0bwamuxn43cpjml4f PTIQ User Manual]
	* [https://labrunr.caltech.edu/machinefiles/126/System%20Manual%20for%20Caltech%2094-219845.pdf Oxford III-V Metal Etcher System Manual] (<i>login to LabRunr required</i>)
	* [https://caltech.box.com/s/gclvux5tu28rpssvwncx5sm518uhmebl Edwards QDP 80 dry vacuum pump Manual]

	== Specifications ==		== Specifications ==

KNI Staff Members

Sydney — Wed, 21 Oct 2026 17:39:57 GMT

Updated Sydney's job title

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	{{StaffMemberTableItem\|		{{StaffMemberTableItem\|
	\|Name = Sydney Garstang		\|Name = Sydney Garstang
	\|JobTitle = Senior ~~Administrative Coordinator~~		\|JobTitle = Senior Administrator
	\|CaltechID = sydney		\|CaltechID = sydney
	\|Office = 128 Steele		\|Office = 128 Steele

Usage Rates

Tkimoto — Tue, 20 Oct 2026 23:32:53 GMT

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	! scope="col" style="text-align:left; background-color:#ffe7d1;" \|Electron Beam Lithography (EBL)		! scope="col" style="text-align:left; background-color:#ffe7d1;" \|Electron Beam Lithography (EBL)
	! scope="col" style="text-align:center; background-color:#FFFFFF;" \|$134/hr		! scope="col" style="text-align:center; background-color:#FFFFFF;" \|$134/hr
			\|-
			! scope="col" style="text-align:left; background-color:#ffd8b4;" \|Heidelberg MLA 150 Maskless Aligner
			! scope="col" style="text-align:left; background-color:#ffe7d1;" \|Maskless Photolithography
			! scope="col" style="text-align:center; background-color:#FFFFFF;" \|$45/hr
	\|-		\|-
	! scope="col" style="text-align:left; background-color:#ffd8b4;" \|FEI Nova 600 Dualbeam Focused Ion Beam		! scope="col" style="text-align:left; background-color:#ffd8b4;" \|FEI Nova 600 Dualbeam Focused Ion Beam

ICP-RIE: III-V, Metal & Silicon Etcher

Kmmckenz — Tue, 20 Oct 2026 00:34:20 GMT

Manufacturer Manuals: changed Labrunr link and reference

← Older revision		Revision as of 00:34, 20 October 2026
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	===== Manufacturer Manuals =====		===== Manufacturer Manuals =====
	* [https://~~labrunr~~.~~caltech~~.~~edu/machinefiles~~/~~126~~/~~System%20Manual%20for%20Caltech%2094-219845.pdf~~ Oxford III-V Metal Etcher System Manual] ~~(<i>login to LabRunr required</i>)~~		* [https://caltech.box.com/s/perob7sn0sq0daf8ewtesztaxe0t6rtn Oxford III-V Metal Etcher System Manual]
	* [https://caltech.box.com/s/gclvux5tu28rpssvwncx5sm518uhmebl Edwards QDP 80 dry vacuum pump Manual]		* [https://caltech.box.com/s/gclvux5tu28rpssvwncx5sm518uhmebl Edwards QDP 80 dry vacuum pump Manual]

III-V Etcher and Atomic Layer Etching (ALE): Oxford Instruments PlasmaPro 100 Cobra 300 ICP-RIE with ALE

Kmmckenz — Tue, 20 Oct 2026 00:32:20 GMT

Manufacturer Manuals

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	\|InstrumentName = Cobra III-V Etcher with ALE		\|InstrumentName = Cobra III-V Etcher with ALE
	\|HeaderColor = #FFE2B9		\|HeaderColor = #FFE2B9
	\|ImageOne = ~~ICP-RIE_III-V,Metal,Si-Etcher~~.jpg		\|ImageOne = Oxford_Cobra_1.jpg
	\|ImageTwo =		\|ImageTwo =
	\|InstrumentType = [[Equipment_List#Etching\|Etching]]		\|InstrumentType = [[Equipment_List#Etching\|Etching]]
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	===== Manufacturer Manuals =====		===== Manufacturer Manuals =====
			* [https://caltech.box.com/s/r2d8bk8mrtxa2qf0bwamuxn43cpjml4f PTIQ User Manual]
	* [https://labrunr.caltech.edu/machinefiles/126/System%20Manual%20for%20Caltech%2094-219845.pdf Oxford III-V Metal Etcher System Manual] (<i>login to LabRunr required</i>)		* [https://labrunr.caltech.edu/machinefiles/126/System%20Manual%20for%20Caltech%2094-219845.pdf Oxford III-V Metal Etcher System Manual] (<i>login to LabRunr required</i>)
	* [https://caltech.box.com/s/gclvux5tu28rpssvwncx5sm518uhmebl Edwards QDP 80 dry vacuum pump Manual]		* [https://caltech.box.com/s/gclvux5tu28rpssvwncx5sm518uhmebl Edwards QDP 80 dry vacuum pump Manual]

	== Specifications ==		== Specifications ==
	~~===== Manufacturer Specifications =====~~
	* [https://caltech.box.com/s/f8f1fx1ffz4ql71suxsvrw0p20b2inp5 Manufacturer Data Sheet]

	===== System Features =====		===== System Features =====
	* Process module frame and separate control rack that house the electronic sub systems, control units, pneumatics, and turbomolecular pump		* Process module frame and separate control rack that house the electronic sub systems, control units, pneumatics, and turbomolecular pump
	* ~~PTiQ~~ operating system		* PTIQ operating system
	* ICP process chamber with 200 mm pumping port, view port and end-point-detection ~~ports for optical emission spectrometer and laser interferometer~~		* ICP process chamber with 200 mm pumping port, view port and end-point-detection port
	* 240 mm Cryo RIE electrode		* 240 mm Cryo RIE electrode
	* 100-mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement		* 100-mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
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	* [https://lab.kni.caltech.edu/ICP-RIE:_Dielectric_Etcher Oxford Dielectric ICP-RIE]		* [https://lab.kni.caltech.edu/ICP-RIE:_Dielectric_Etcher Oxford Dielectric ICP-RIE]
	* [https://lab.kni.caltech.edu/DRIE:_Bosch_%26_Cryo_ICP-RIE_for_Silicon Oxford DRIE ICP-RIE]		* [https://lab.kni.caltech.edu/DRIE:_Bosch_%26_Cryo_ICP-RIE_for_Silicon Oxford DRIE ICP-RIE]
	* Oxford III-V ICP-RIE		* [[ICP-RIE: III-V, Metal & Silicon Etcher\|Oxford III-V ICP-RIE]]
	* [https://lab.kni.caltech.edu/XeF2_Etcher_for_Silicon XeF2 Etcher]		* [https://lab.kni.caltech.edu/XeF2_Etcher_for_Silicon XeF2 Etcher]
	* [https://lab.kni.caltech.edu/Plasma-Enhanced_Chemical_Vapor_Deposition_(PECVD) Oxford PECVD]		* [https://lab.kni.caltech.edu/Plasma-Enhanced_Chemical_Vapor_Deposition_(PECVD) Oxford PECVD]
	* [https://lab.kni.caltech.edu/FlexAL_II:_Atomic_Layer_Deposition_(ALD) Oxford ALD]		* [https://lab.kni.caltech.edu/FlexAL_II:_Atomic_Layer_Deposition_(ALD) Oxford ALD]

File:Oxford Cobra 1.jpg

Kmmckenz — Tue, 20 Oct 2026 00:01:02 GMT

Kmmckenz uploaded File:Oxford Cobra 1.jpg Oxford Cobra etcher

New page

== Summary ==
Oxford Cobra etcher

III-V Etcher and Atomic Layer Etching (ALE): Oxford Instruments PlasmaPro 100 Cobra 300 ICP-RIE with ALE

Kmmckenz — Mon, 12 Oct 2026 17:28:47 GMT

Review Articles

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	* Atomic layer etch		* Atomic layer etch
	===== Allowed Material in Etcher =====		===== Allowed Material in Etcher =====
	* Etch materials: Si, Si<sub>x</sub>N<sub>y</sub>, SiO<sub>2</sub>, Ge, InP, GaAs, Al, Mo, Nb, W, Ti		* Etch materials: Si, Si<sub>x</sub>N<sub>y</sub>, SiO<sub>2</sub>, Ge, InP, GaAs, GaN, Nb, Ta, LiNbO<sub>3</sub>, YVO<sub>4</sub>, MgB<sub>2</sub>, BaTiO<sub>3</sub>
	* Masks: PMMA/ZEP/SPR/AZ/maN resists, ~~SiOx~~/Al<sub>2</sub>O<sub>3</sub>, Cr hard masks		* Masks: PMMA/ZEP/SPR/AZ/maN resists, SiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>, Cr hard masks
	* Other: Metal in etch stack (not exposed to plasma)		* Other: Metal in etch stack (not exposed to plasma)
	===== Etching Gas List =====		===== Etching Gas List =====
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	== Resources ==		== Resources ==
	===== SOPs & Troubleshooting =====		===== SOPs & Troubleshooting =====
	* ~~[https://caltech.box.com/s/0qe85zye5mjlgqxorxa77tzgqgblv3ep~~ General Use SOP]		* General Use SOP
	* [https://caltech.box.com/s/681uz0b8zsv6ivy43a5ggsoydp5zlyza Oxfords reservation and use policy]		* [https://caltech.box.com/s/681uz0b8zsv6ivy43a5ggsoydp5zlyza Oxfords reservation and use policy]
	* ~~[https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp~~ Etcher toxic gas handling SOP]		* Etcher toxic gas handling SOP
	* ~~[https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50~~ Power Up Oxford ICP-RIE SOP]		* Power Up Oxford ICP-RIE SOP
	* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]

	===== Process Documents =====		===== Process Documents =====
	* [https://caltech.box.com/s/nondj2ore8rg61tpur6hj4a3hvj8j9s5 Process Standards]		* [https://caltech.box.com/s/nondj2ore8rg61tpur6hj4a3hvj8j9s5 Process Standards]
	* [https://caltech.box.com/s/8zfqalb9u11l31mj3iwydofa8qecyp47 Aluminum Etch via Chlorine/Methane/Hydrogen (KNI Recipe)]
	* [https://caltech.box.com/s/wybxe3urco5s6bqw5getfu7p0amxq7wx AlGaN/GaN Etch with Photoresist Mask]		* [https://caltech.box.com/s/wybxe3urco5s6bqw5getfu7p0amxq7wx AlGaN/GaN Etch with Photoresist Mask]
	* [https://caltech.box.com/s/q3sq9cwkp5dicigkj6gkvohuqtf5ivwx InP Etch]		* [https://caltech.box.com/s/q3sq9cwkp5dicigkj6gkvohuqtf5ivwx InP Etch]
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	* [https://caltech.box.com/s/borba8iuvxi9qj2pe8g0vj5vo7xpta0d GaAs Via Hole Etch]		* [https://caltech.box.com/s/borba8iuvxi9qj2pe8g0vj5vo7xpta0d GaAs Via Hole Etch]
	* [https://caltech.box.com/s/x0mm9bsvwc17ev3vx5ks759mwa36tpxm Selective GaAs Etch]		* [https://caltech.box.com/s/x0mm9bsvwc17ev3vx5ks759mwa36tpxm Selective GaAs Etch]
	* [https://caltech.box.com/s/z3ibiol0xp1qwi6cyvnghbxs81p8j5q5 Silicon Waveguide Etch]
	* [https://caltech.box.com/s/k8gj2bcluhy50in9m2hwz379hnkn9bdw Silicon Nitride etch]
	* [https://caltech.box.com/s/4e6rskkmv1sgu9ipgfnrzeq0cguo1gc0 Hard Mask Oxide Etch]		* [https://caltech.box.com/s/4e6rskkmv1sgu9ipgfnrzeq0cguo1gc0 Hard Mask Oxide Etch]
	* [https://caltech.box.com/s/daa9zeonjqphc8v963mi3lojo8me0u9j Cryo-Si Etch]
	* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]		* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]
	* [https://caltech.box.com/s/3b9zbdj1uoazz7zbz8png25c2ba65vas Comparison of etch rates using different sample-fixing oils]		* [https://caltech.box.com/s/3b9zbdj1uoazz7zbz8png25c2ba65vas Comparison of etch rates using different sample-fixing oils]
	* [https://caltech.box.com/s/40kaaqur8ohyg55uq2pv3jqrzlgi98ts Comparison of Pseudo-Bosch ICP-RIE Etch of SiO2-SiNx]
	* [https://caltech.box.com/s/wemw91xtjrh7ac34ks9ai3lv1oujivxa Al2O3 Etch in Oxford ICP and Plasmatherm RIE]

	===== Review Articles =====		===== Review Articles =====
	* [https://caltech.box.com/s/3fnc4a7qeyr1up6kth599j7ojybka2vb Guidelines for Etching Silicon MEMS Structures]
	* [https://caltech.box.com/s/j61w7vr4f8cdjr64jrnz1t37oizdhl7f Etch rates for MEMS Processing - Part I]		* [https://caltech.box.com/s/j61w7vr4f8cdjr64jrnz1t37oizdhl7f Etch rates for MEMS Processing - Part I]
	* [https://caltech.box.com/s/ls0jl268j4at6z39g6kv8wivevpq80eh Etch Rates for MEMS Processing - Part II]		* [https://caltech.box.com/s/ls0jl268j4at6z39g6kv8wivevpq80eh Etch Rates for MEMS Processing - Part II]
	* [https://caltech.box.com/s/cetpre7d66gssbhtaicnhtovyo6ngzjv Dry Etching of Electronic Oxides, Polymers, and Semiconductors]		* [https://caltech.box.com/s/cetpre7d66gssbhtaicnhtovyo6ngzjv Dry Etching of Electronic Oxides, Polymers, and Semiconductors]
	* [https://caltech.box.com/s/pauf384duhejuwzfwan71eam7nkvdrxw Alumina etch masks for fabrication of high-aspect-ratio silicon micropillars and nanopillars]		* [https://caltech.box.com/s/pauf384duhejuwzfwan71eam7nkvdrxw Alumina etch masks for fabrication of high-aspect-ratio silicon micropillars and nanopillars]
	* [https://caltech.box.com/s/q42u5q46nmx2hm53szub556kwcrc0oih David Henry's thesis on dry etching in the KNI's tools]

	===== Manufacturer Manuals =====		===== Manufacturer Manuals =====
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	===== System Features =====		===== System Features =====
	* ~~Universal base console~~ that ~~houses~~ the electronic sub systems, control units, pneumatics, and turbomolecular pump		* Process module frame and separate control rack that house the electronic sub systems, control units, pneumatics, and turbomolecular pump
	* ~~PC 2000 Operating~~ system		* PTiQ operating system
	* ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer		* ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
	* ~~Variable height~~ 240 mm Cryo RIE electrode		* 240 mm Cryo RIE electrode
	* Parameter ramping software (Not Bosch)
	* 100-mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement		* 100-mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
	* 200 mm pumping port is fitted with a 200 mm variable gate valve for chamber isolation and process pressure control		* 200 mm pumping port is fitted with a 200 mm variable gate valve for chamber isolation and process pressure control
	* Twelve line gas pod with ~~three~~ non-toxic and six toxic digital mass-flow-controlled gas lines		* Twelve line gas pod with four non-toxic and six toxic digital mass-flow-controlled gas lines
	* ~~Alcatel 1300 l/s MAGLEV~~ turbo pump		* Adixen ATH1600MT turbo pump backed by Pfeiffer A124H ELT dry pump
	* Single-wafer automatic insertion load lock with ~~soft pump option~~		* Single-wafer automatic insertion load lock with wafer presence sensor
			* Verity SD1024GH variable wavelength optical endpoint detection kit

	===== System Specifications =====		===== System Specifications =====
	* Chamber wall heating 80 °C		* Chamber wall heating 50 °C
	* Cryo table range -~~140~~ to 400 °C		* Cryo table range -150 to 400 °C
	* ICP ~~380~~ mm remote high-density plasma source with 5 kW RF generator and automatic matching unit ~~close-coupled to the source~~		* ICP 300 mm remote high-density plasma source with 3 kW RF generator and automatic matching unit
	* Substrate bias control by ~~30 / 300~~ W RIE source		* Substrate bias control by 600 W RIE source with low power bias kit to allow accurate control <30 W
	* Helium back-side wafer cooling		* ALE gas dose kit enabling controlled, reproducible gas doses down to 10ms
			* Helium back-side wafer cooling and mechanical wafer clamping


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	* [https://lab.kni.caltech.edu/ICP-RIE:_Dielectric_Etcher Oxford Dielectric ICP-RIE]		* [https://lab.kni.caltech.edu/ICP-RIE:_Dielectric_Etcher Oxford Dielectric ICP-RIE]
	* [https://lab.kni.caltech.edu/DRIE:_Bosch_%26_Cryo_ICP-RIE_for_Silicon Oxford DRIE ICP-RIE]		* [https://lab.kni.caltech.edu/DRIE:_Bosch_%26_Cryo_ICP-RIE_for_Silicon Oxford DRIE ICP-RIE]
	* ~~[https://lab.kni.caltech.edu/Dual_Chamber_RIE:_Silicon,_III~~-~~V_Material_%26_Organics_Etcher Plasma~~-~~Therm~~ RIE]		* Oxford III-V ICP-RIE
	* [https://lab.kni.caltech.edu/XeF2_Etcher_for_Silicon XeF2 Etcher]		* [https://lab.kni.caltech.edu/XeF2_Etcher_for_Silicon XeF2 Etcher]
	* [https://lab.kni.caltech.edu/Plasma-Enhanced_Chemical_Vapor_Deposition_(PECVD) Oxford PECVD]		* [https://lab.kni.caltech.edu/Plasma-Enhanced_Chemical_Vapor_Deposition_(PECVD) Oxford PECVD]
	* [https://lab.kni.caltech.edu/FlexAL_II:_Atomic_Layer_Deposition_(ALD) Oxford ALD]		* [https://lab.kni.caltech.edu/FlexAL_II:_Atomic_Layer_Deposition_(ALD) Oxford ALD]

Usage Rates

Sydney — Thu, 08 Oct 2026 00:01:57 GMT

Updated FY reference for Overhead/Indirect Cost Rate section to FY27.

III-V Etcher and Atomic Layer Etching (ALE): Oxford Instruments PlasmaPro 100 Cobra 300 ICP-RIE with ALE

Kmmckenz — Wed, 07 Oct 2026 19:30:19 GMT

removed N2 from gas list

← Older revision		Revision as of 19:30, 7 October 2026
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	{{InstrumentInfoboxOneImage\|		{{InstrumentInfoboxOneImage\|
	\|InstrumentName = III-V~~, Metal & Si~~ Etcher		\|InstrumentName = Cobra III-V Etcher with ALE
	\|HeaderColor = #FFE2B9		\|HeaderColor = #FFE2B9
	\|ImageOne = ICP-RIE_III-V,Metal,Si-Etcher.jpg		\|ImageOne = ICP-RIE_III-V,Metal,Si-Etcher.jpg
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	\|StaffPhone = 626-395-5732		\|StaffPhone = 626-395-5732
	\|Manufacturer = Oxford Instruments		\|Manufacturer = Oxford Instruments
	\|Techniques = ~~pseudo~~-~~Bosch & Cryogenic Si Etch~~<br>~~Compound Semiconductor~~ Etching		\|Techniques = III-V Semiconductor Etching<br>Atomic Layer Etching
	\|EmailList = kni-oxfordicp		\|EmailList = kni-oxfordicp
	\|EmailListName = Oxford ICP		\|EmailListName = Oxford ICP
	\|Model = ~~Plasmalab System~~ 100		\|Model = PlasmaPro 100 Cobra
	}}		}}
	== Description ==		== Description ==
	The ~~III-V, Metal & Silicon~~ inductively-coupled plasma reactive-ion etcher (ICP-RIE) is an Oxford Instruments Plasma Technology ~~Plasmalab System~~ 100 ~~ICP-RIE 380~~ system that is optimized for the etching of compound semiconductors~~, metals,~~ and ~~silicon~~. In addition to a wide range of gases for etching a variety of III-V materials ~~and metals~~, this system is configured ~~for highly-selective ICP-RIE of silicon via the pseudo-Bosch process, allowing silicon etching~~ with ~~SF<sub>6</sub> and C<sub>4</sub>F<sub>8</sub> gases as well as cryogenic silicon~~ etching ~~with SF<sub>6</sub> and O<sub>2</sub>~~ over a temperature range of -~~140~~ to ~~300~~ °C. This system supports wafer sizes up to 6 inches.		The Cobra inductively-coupled plasma reactive-ion etcher (ICP-RIE) with ALE is an Oxford Instruments Plasma Technology PlasmaPro 100 Cobra 300 system that is optimized for the etching of compound semiconductors and also features an ALE gas dose kit. In addition to a wide range of gases for etching a variety of III-V materials, this system is also configured with an atomic layer etching gas dose kit enabling controlled pulses of gas doses down to 10ms over a table temperature range of -150 to 400 °C. The system is also available for etching of more novel optical materials such as lithium niobate. This system supports wafer sizes up to 6 inches.
	===== Applications =====		===== Applications =====
	* ~~InP grating etch~~		* III-V material etch
	* GaAs photonics device etch		* Lithium niobate etch
	* ~~pseudo-Bosch of silicon~~		* Atomic layer etch
	* Metals etch
	* ~~Cryogenic~~ etch ~~of silicon (available upon request)~~
	===== Allowed Material in Etcher =====		===== Allowed Material in Etcher =====
	* Etch materials: Si, Si<sub>x</sub>N<sub>y</sub>, SiO<sub>2</sub>, Ge, InP, GaAs, Al, Mo, Nb, W, Ti		* Etch materials: Si, Si<sub>x</sub>N<sub>y</sub>, SiO<sub>2</sub>, Ge, InP, GaAs, Al, Mo, Nb, W, Ti
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	===== Etching Gas List =====		===== Etching Gas List =====
	* SF<sub>6</sub>		* SF<sub>6</sub>
	* C<sub>4</sub>F<sub>8</sub>
	* O<sub>2</sub>		* O<sub>2</sub>
	* Ar		* Ar
	* Cl<sub>2</sub>		* Cl<sub>2</sub>
	* ~~SiCl~~<sub>4</sub>		* BCl<sub>3</sub>
	* CH<sub>4</sub>		* CH<sub>4</sub>
	* H<sub>2</sub>		* H<sub>2</sub>
	* HBr		* HBr
			* SiCl<sub>4</sub>

	== Resources ==		== Resources ==

Full Service Rates

Tkimoto — Wed, 07 Oct 2026 02:58:34 GMT

← Older revision		Revision as of 02:58, 7 October 2026
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	=== Cost ===		=== Cost ===
	The prices below are for industry customers (for-profit entities). If you are a non-Caltech academic or government customer, please contact us for the rates. Rates are effective October 1, ~~2025~~.		The prices below are for industry customers (for-profit entities). If you are a non-Caltech academic or government customer, please contact us for the rates. Rates are effective October 1, 2026.
	{\| class="wikitable"		{\| class="wikitable"
	\|'''Resource'''		\|'''Resource'''
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	\|-		\|-
	\|Technical Staff Effort		\|Technical Staff Effort
	\|$ ~~200~~.00		\|$ 170.00
	\|-		\|-
	\|EBPG 5000+ or 5200		\|EBPG 5000+ or 5200
	\|$ ~~442~~.00		\|$ 455.00
	\|-		\|-
	\|Nova 600 FIB		\|Nova 600 FIB
	\|$ ~~255~~.00		\|$ 263.00
	\|-		\|-
	\|III-V Cobra ALE Etcher		\|III-V Cobra ALE Etcher
	\|$ ~~204~~.00		\|$ 210.00
	\|-		\|-
	\|PlasmaPro PECVD (oxide, nitride)		\|PlasmaPro PECVD (oxide, nitride)
	\|$ ~~204~~.00		\|$ 210.00
	\|-		\|-
	\|FlexAL II ALD/ALE		\|FlexAL II ALD/ALE
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	\|-		\|-
	\|Legacy PlasmaLab PECVD (silicon)		\|Legacy PlasmaLab PECVD (silicon)
	\|$ ~~136~~.00		\|$ 140.00
	\|-		\|-
	\|Legacy Oxford Etchers (DRIE, III-V, Dielectric)		\|Legacy Oxford Etchers (DRIE, III-V, Dielectric)
	\|$ ~~136~~.00		\|$ 140.00
	\|-		\|-
	\|Nanoscribe PPGT (2D/3D print)		\|Nanoscribe PPGT (2D/3D print)
	\|$ 17.00		\|$ 27.00
	\|-		\|-
	\|Administrative Fee (per transaction)		\|Administrative Fee (per transaction)
	\|$ ~~340~~.00		\|$ 170.00
	\|}		\|}
	'''''Note:''' The prices shown here include Caltech's indirect cost rate.''		'''''Note:''' The prices shown here include Caltech's indirect cost rate.''

The Kavli Nanoscience Institute Laboratory at Caltech

Tkimoto — Tue, 06 Oct 2026 22:01:43 GMT

About the KNI

← Older revision		Revision as of 22:01, 6 October 2026
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	== About the KNI ==		== About the KNI ==
	The Kavli Nanoscience Institute (KNI) Laboratory, located at the California Institute of Technology, ~~spans 10,000 ft<sup>2</sup> across two facilities, primary among them the~~ 7,500 ft<sup>2</sup> controlled-environment cleanroom in the Steele Building sub-basement, where the ~~majority of~~ lithography, deposition, etching, microscopy, and supporting instrumentation is located. Managed by full-time technical staff and available for use by researchers at Caltech and other academic, government and industrial institutions, the KNI Laboratory is equipped for — and dedicated to — exploring the limits of nanofabrication.		The Kavli Nanoscience Institute (KNI) Laboratory, located at the California Institute of Technology, is a 7,500 ft<sup>2</sup> controlled-environment cleanroom in the Steele Building sub-basement, where the lithography, deposition, etching, microscopy, and supporting instrumentation is located. The majority of the cleanroom space under HEPA filter is ISO 6 (class 1,000) with photo and electron beam lithography areas under ISO 5 (class 100). Managed by full-time technical staff and available for use by researchers at Caltech and other academic, government and industrial institutions, the KNI Laboratory is equipped for — and dedicated to — exploring the limits of nanofabrication.

	== Available Resources ==		== Available Resources ==

Carbon Evaporator

Ykim3 — Sat, 03 Oct 2026 02:49:43 GMT

← Older revision		Revision as of 02:49, 3 October 2026
(5 intermediate revisions by the same user not shown)
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	== Resources ==		== Resources ==
	===== Equipment Data =====		===== Equipment Data =====
			[[File:Carbon Thread Installation 1.jpg\|thumb\|'''Carbon Thread Installation Picture 1: Correct parallel thread installation''']]

	[[~~Image~~:Carbon~~-Evaporator-Source-~~Thread.jpg\|thumb\|~~top~~\|~~upright~~=~~0.9\|~~The Carbon Evaporator source needs to be periodically disconnected from the instrument by the user so that the carbon thread can be changed; see the SOP and notes in the SOP section on this page for instructions on how to change the thread]]		[[File:Carbon Thread Installation 2.jpg\|thumb\|'''Carbon Thread Installation Picture 2: Thread properly wound around the outer surface of the clamp'''\|alt=The Carbon Evaporator source needs to be periodically disconnected from the instrument by the user so that the carbon thread can be changed; see the SOP and notes in the SOP section on this page for instructions on how to change the thread.]]

	===== SOP & Troubleshooting =====		===== SOP & Troubleshooting =====
	* [https://caltech.app.box.com/file/2102569954808 Updated SOP (01/14/2026)]		* [https://caltech.app.box.com/file/2102569954808 Updated SOP (01/14/2026)]
	* The procedure to install a new carbon thread can be found on [https://caltech.app.box.com/file/725150718178?s=xx5psvz8u0jqszdqhh44fd5xkxmhz4a6 Manual page 47]		* The procedure to install a new carbon thread can be found on [https://caltech.app.box.com/file/725150718178?s=xx5psvz8u0jqszdqhh44fd5xkxmhz4a6 Manual page 47]
	** Note: always install as a "double thread," i.e. double the thread back over itself before installing – a thread length that is approximately twice the length of the evaporator's door width is long enough to double over and install.		* The Carbon Evaporator source needs to be periodically disconnected from the instrument by the user so that the carbon thread can be changed; see the SOP and notes in the SOP section on this page for instructions on how to change the thread.
			* Note: always install as a "double thread," i.e. double the thread back over itself before installing – a thread length that is approximately twice the length of the evaporator's door width is long enough to double over and install.

	===== Video =====		===== Video =====
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	===== Carbon Evaporation Specifications =====		===== Carbon Evaporation Specifications =====
	* Average Deposition Rate: ~1 nm per pulse, when using a double thread (i.e. a thread that is doubled over on itself; see notes in SOP section above)		* Average Deposition Rate: ~1 nm per pulse, when using a double thread (i.e. a thread that is doubled over on itself; see notes in SOP section above)
	* Monitor deposition thickness using the quartz crystal thickness monitor, or simply program the number of pulses that you want		* Monitor deposition thickness using the quartz crystal thickness monitor, or simply program the number of pulses that you want<br>
	~~<br>~~
	<br>
	== Related Instrumentation in the KNI ==		== Related Instrumentation in the KNI ==
	===== Sample Preparation for Microscopy =====		===== Sample Preparation for Microscopy =====

File:Carbon Thread Installation 2.jpg

Ykim3 — Fri, 02 Oct 2026 19:50:39 GMT

Ykim3 uploaded File:Carbon Thread Installation 2.jpg

New page

File:Carbon Thread Installation 1.jpg

Ykim3 — Fri, 02 Oct 2026 19:49:08 GMT

Ykim3 uploaded File:Carbon Thread Installation 1.jpg

New page

Carbon Thread Installation 1

III-V Etcher and Atomic Layer Etching (ALE): Oxford Instruments PlasmaPro 100 Cobra 300 ICP-RIE with ALE

Kmmckenz — Thu, 01 Oct 2026 00:21:07 GMT

Created page with "{{InstrumentInfoboxOneImage| |InstrumentName = III-V, Metal & Si Etcher |HeaderColor = #FFE2B9 |ImageOne = ICP-RIE_III-V,Metal,Si-Etcher.jpg |ImageTwo = |InstrumentType = Etching |RoomLocation = B235 Steele |LabPhone = 626-395-1532 |PrimaryStaff = Kelly McKenzie |StaffEmail = kmmckenz@caltech.edu |StaffPhone = 626-395-5732 |Manufacturer = Oxford Instruments |Techniques = pseudo-Bosch & Cryogenic Si Etch Compound Semiconductor Etching |E..."

New page

{{InstrumentInfoboxOneImage|
|InstrumentName = III-V, Metal & Si Etcher
|HeaderColor = #FFE2B9
|ImageOne = ICP-RIE_III-V,Metal,Si-Etcher.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Etching|Etching]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-5732
|Manufacturer = Oxford Instruments
|Techniques = pseudo-Bosch & Cryogenic Si Etch Compound Semiconductor Etching
|EmailList = kni-oxfordicp
|EmailListName = Oxford ICP
|Model = Plasmalab System 100
}}
== Description ==
The III-V, Metal & Silicon inductively-coupled plasma reactive-ion etcher (ICP-RIE) is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for the etching of compound semiconductors, metals, and silicon. In addition to a wide range of gases for etching a variety of III-V materials and metals, this system is configured for highly-selective ICP-RIE of silicon via the pseudo-Bosch process, allowing silicon etching with SF6 and C4F8 gases as well as cryogenic silicon etching with SF6 and O2 over a temperature range of -140 to 300 °C. This system supports wafer sizes up to 6 inches.
===== Applications =====
* InP grating etch
* GaAs photonics device etch
* pseudo-Bosch of silicon
* Metals etch
* Cryogenic etch of silicon (available upon request)
===== Allowed Material in Etcher =====
* Etch materials: Si, SixNy, SiO2, Ge, InP, GaAs, Al, Mo, Nb, W, Ti
* Masks: PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3, Cr hard masks
* Other: Metal in etch stack (not exposed to plasma)
===== Etching Gas List =====
* SF6
* C4F8
* O2
* Ar
* Cl2
* SiCl4
* CH4
* H2
* HBr

== Resources ==
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/0qe85zye5mjlgqxorxa77tzgqgblv3ep General Use SOP]
* [https://caltech.box.com/s/681uz0b8zsv6ivy43a5ggsoydp5zlyza Oxfords reservation and use policy]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]

===== Process Documents =====
* [https://caltech.box.com/s/nondj2ore8rg61tpur6hj4a3hvj8j9s5 Process Standards]
* [https://caltech.box.com/s/8zfqalb9u11l31mj3iwydofa8qecyp47 Aluminum Etch via Chlorine/Methane/Hydrogen (KNI Recipe)]
* [https://caltech.box.com/s/wybxe3urco5s6bqw5getfu7p0amxq7wx AlGaN/GaN Etch with Photoresist Mask]
* [https://caltech.box.com/s/q3sq9cwkp5dicigkj6gkvohuqtf5ivwx InP Etch]
* [https://caltech.box.com/s/4e22q4i3e5cpgjyrykf7r4bm0m0pob59 InP/ InGaAsP Laser Facet ICP Etching]
* [https://caltech.box.com/s/borba8iuvxi9qj2pe8g0vj5vo7xpta0d GaAs Via Hole Etch]
* [https://caltech.box.com/s/x0mm9bsvwc17ev3vx5ks759mwa36tpxm Selective GaAs Etch]
* [https://caltech.box.com/s/z3ibiol0xp1qwi6cyvnghbxs81p8j5q5 Silicon Waveguide Etch]
* [https://caltech.box.com/s/k8gj2bcluhy50in9m2hwz379hnkn9bdw Silicon Nitride etch]
* [https://caltech.box.com/s/4e6rskkmv1sgu9ipgfnrzeq0cguo1gc0 Hard Mask Oxide Etch]
* [https://caltech.box.com/s/daa9zeonjqphc8v963mi3lojo8me0u9j Cryo-Si Etch]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]
* [https://caltech.box.com/s/3b9zbdj1uoazz7zbz8png25c2ba65vas Comparison of etch rates using different sample-fixing oils]
* [https://caltech.box.com/s/40kaaqur8ohyg55uq2pv3jqrzlgi98ts Comparison of Pseudo-Bosch ICP-RIE Etch of SiO2-SiNx]
* [https://caltech.box.com/s/wemw91xtjrh7ac34ks9ai3lv1oujivxa Al2O3 Etch in Oxford ICP and Plasmatherm RIE]

===== Review Articles =====
* [https://caltech.box.com/s/3fnc4a7qeyr1up6kth599j7ojybka2vb Guidelines for Etching Silicon MEMS Structures]
* [https://caltech.box.com/s/j61w7vr4f8cdjr64jrnz1t37oizdhl7f Etch rates for MEMS Processing - Part I]
* [https://caltech.box.com/s/ls0jl268j4at6z39g6kv8wivevpq80eh Etch Rates for MEMS Processing - Part II]
* [https://caltech.box.com/s/cetpre7d66gssbhtaicnhtovyo6ngzjv Dry Etching of Electronic Oxides, Polymers, and Semiconductors]
* [https://caltech.box.com/s/pauf384duhejuwzfwan71eam7nkvdrxw Alumina etch masks for fabrication of high-aspect-ratio silicon micropillars and nanopillars]
* [https://caltech.box.com/s/q42u5q46nmx2hm53szub556kwcrc0oih David Henry's thesis on dry etching in the KNI's tools]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/126/System%20Manual%20for%20Caltech%2094-219845.pdf Oxford III-V Metal Etcher System Manual] (login to LabRunr required)
* [https://caltech.box.com/s/gclvux5tu28rpssvwncx5sm518uhmebl Edwards QDP 80 dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/f8f1fx1ffz4ql71suxsvrw0p20b2inp5 Manufacturer Data Sheet]

===== System Features =====
* Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
* Variable height 240 mm Cryo RIE electrode
* Parameter ramping software (Not Bosch)
* 100-mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
* 200 mm pumping port is fitted with a 200 mm variable gate valve for chamber isolation and process pressure control
* Twelve line gas pod with three non-toxic and six toxic digital mass-flow-controlled gas lines
* Alcatel 1300 l/s MAGLEV turbo pump
* Single-wafer automatic insertion load lock with soft pump option

===== System Specifications =====
* Chamber wall heating 80 °C
* Cryo table range -140 to 400 °C
* ICP 380 mm remote high-density plasma source with 5 kW RF generator and automatic matching unit close-coupled to the source
* Substrate bias control by 30 / 300 W RIE source
* Helium back-side wafer cooling

== Related Tools ==
* [https://lab.kni.caltech.edu/ICP-RIE:_Dielectric_Etcher Oxford Dielectric ICP-RIE]
* [https://lab.kni.caltech.edu/DRIE:_Bosch_%26_Cryo_ICP-RIE_for_Silicon Oxford DRIE ICP-RIE]
* [https://lab.kni.caltech.edu/Dual_Chamber_RIE:_Silicon,_III-V_Material_%26_Organics_Etcher Plasma-Therm RIE]
* [https://lab.kni.caltech.edu/XeF2_Etcher_for_Silicon XeF2 Etcher]
* [https://lab.kni.caltech.edu/Plasma-Enhanced_Chemical_Vapor_Deposition_(PECVD) Oxford PECVD]
* [https://lab.kni.caltech.edu/FlexAL_II:_Atomic_Layer_Deposition_(ALD) Oxford ALD]

← Older revision		Revision as of 19:14, 21 October 2026
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	* [[ICP-RIE: III-V, Metal & Silicon Etcher \| III-V Material, Metal & Silicon Etcher: Oxford Instruments System 100 ICP-RIE]]		* [[ICP-RIE: III-V, Metal & Silicon Etcher \| III-V Material, Metal & Silicon Etcher: Oxford Instruments System 100 ICP-RIE]]
	* [[ICP-RIE: Dielectric Etcher \| Dielectric Material Etcher: Oxford Instruments Dielectric System 100 ICP-RIE]]		* [[ICP-RIE: Dielectric Etcher \| Dielectric Material Etcher: Oxford Instruments Dielectric System 100 ICP-RIE]]
			* [[III-V Etcher and Atomic Layer Etching (ALE): Oxford Instruments PlasmaPro 100 Cobra 300 ICP-RIE with ALE]]
	<!---* [[Dual Chamber RIE: Silicon, III-V Material & Organics Etcher \| Silicon, III-V Material & Organics Etcher: Plasma-Therm Dual Chamber RIE]]--->		<!---* [[Dual Chamber RIE: Silicon, III-V Material & Organics Etcher \| Silicon, III-V Material & Organics Etcher: Plasma-Therm Dual Chamber RIE]]--->
	* [[Tergeo Plus ICP- & CCP-RIE: Oxygen & Argon Plasma Cleaner \| Oxygen & Argon Plasma Cleaner: PIE Scientific Tergeo Plus ICP- & CCP-RIE]]		* [[Tergeo Plus ICP- & CCP-RIE: Oxygen & Argon Plasma Cleaner \| Oxygen & Argon Plasma Cleaner: PIE Scientific Tergeo Plus ICP- & CCP-RIE]]

← Older revision		Revision as of 23:32, 20 October 2026
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	! scope="col" style="text-align:left; background-color:#ffe7d1;" \|Electron Beam Lithography (EBL)		! scope="col" style="text-align:left; background-color:#ffe7d1;" \|Electron Beam Lithography (EBL)
	! scope="col" style="text-align:center; background-color:#FFFFFF;" \|$134/hr		! scope="col" style="text-align:center; background-color:#FFFFFF;" \|$134/hr
			\|-
			! scope="col" style="text-align:left; background-color:#ffd8b4;" \|Heidelberg MLA 150 Maskless Aligner
			! scope="col" style="text-align:left; background-color:#ffe7d1;" \|Maskless Photolithography
			! scope="col" style="text-align:center; background-color:#FFFFFF;" \|$45/hr
	\|-		\|-
	! scope="col" style="text-align:left; background-color:#ffd8b4;" \|FEI Nova 600 Dualbeam Focused Ion Beam		! scope="col" style="text-align:left; background-color:#ffd8b4;" \|FEI Nova 600 Dualbeam Focused Ion Beam

← Older revision		Revision as of 00:01, 8 October 2026
(One intermediate revision by the same user not shown)
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	'''Overview of KNI Lab User Fees''' <br>		'''Overview of KNI Lab User Fees''' <br>
	''Rates below are valid beginning October 1, ~~2025~~ and are subject to change''		''Rates below are valid beginning October 1, 2026 and are subject to change''

	* Fees are incurred on a pay-as-you-go basis (tools are charged by the hour or portion thereof).		* Fees are incurred on a pay-as-you-go basis (tools are charged by the hour or portion thereof).
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	==Caltech & JPL User Rates==		==Caltech & JPL User Rates==
	Below is a table of ''direct'' hourly rates for lab and equipment use in the KNI Laboratory. Hourly rates are applied to an individual's actual usage in the KNI Lab. Rates do '''not''' include any applicable indirect charges, such as F&A fees. F&A (overhead) will be applied separately based on the customer's PTA type. Rates are valid beginning October 1, ~~2025~~ and are subject to change.		Below is a table of ''direct'' hourly rates for lab and equipment use in the KNI Laboratory. Hourly rates are applied to an individual's actual usage in the KNI Lab. Rates do '''not''' include any applicable indirect charges, such as F&A fees. F&A (overhead) will be applied separately based on the customer's PTA type. Rates are valid beginning October 1, 2026 and are subject to change.

	{\| class="wikitable" style="width: 90%;"		{\| class="wikitable" style="width: 90%;"
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	! scope="col" style="text-align:left; background-color:#ffd8b4;" \|General Lab		! scope="col" style="text-align:left; background-color:#ffd8b4;" \|General Lab
	! scope="col" style="text-align:left; background-color:#ffe7d1;" \|See details below		! scope="col" style="text-align:left; background-color:#ffe7d1;" \|See details below
	! scope="col" style="text-align:center; background-color:#FFFFFF;" \|$43/hr		! scope="col" style="text-align:center; background-color:#FFFFFF;" \|$44/hr
	\|-		\|-
	! scope="col" style="text-align:left; background-color:#ffd8b4;" \|Raith EBPG 5000+ and 5200 Electron Beam Writers		! scope="col" style="text-align:left; background-color:#ffd8b4;" \|Raith EBPG 5000+ and 5200 Electron Beam Writers
	! scope="col" style="text-align:left; background-color:#ffe7d1;" \|Electron Beam Lithography (EBL)		! scope="col" style="text-align:left; background-color:#ffe7d1;" \|Electron Beam Lithography (EBL)
	! scope="col" style="text-align:center; background-color:#FFFFFF;" \|$~~130~~/hr		! scope="col" style="text-align:center; background-color:#FFFFFF;" \|$134/hr
	\|-		\|-
	! scope="col" style="text-align:left; background-color:#ffd8b4;" \|FEI Nova 600 Dualbeam Focused Ion Beam		! scope="col" style="text-align:left; background-color:#ffd8b4;" \|FEI Nova 600 Dualbeam Focused Ion Beam
	! scope="col" style="text-align:left; background-color:#ffe7d1;" \| Microscopy, Focused Ion Beam (FIB)		! scope="col" style="text-align:left; background-color:#ffe7d1;" \| Microscopy, Focused Ion Beam (FIB)
	! scope="col" style="text-align:center; background-color:#FFFFFF;" \|$75/hr		! scope="col" style="text-align:center; background-color:#FFFFFF;" \|$77/hr
	\|-		\|-
	! scope="col" style="text-align:left; background-color:#ffd8b4;" \|Oxford Cobra III-V ALE Etch System ~~(available soon)~~		! scope="col" style="text-align:left; background-color:#ffd8b4;" \|Oxford Cobra III-V ALE Etch System
	! scope="col" style="text-align:left; background-color:#ffe7d1;" \|Etch, RIE		! scope="col" style="text-align:left; background-color:#ffe7d1;" \|Etch, RIE
	! scope="col" style="text-align:center; background-color:#FFFFFF;" \|$60/hr		! scope="col" style="text-align:center; background-color:#FFFFFF;" \|$62/hr
	\|-		\|-
	! scope="col" style="text-align:left; background-color:#ffd8b4;" \|Oxford PECVD "2" - oxides and nitrides		! scope="col" style="text-align:left; background-color:#ffd8b4;" \|Oxford PECVD "2" - oxides and nitrides
	! scope="col" style="text-align:left; background-color:#ffe7d1;" \| Deposition, Chemical Vapor		! scope="col" style="text-align:left; background-color:#ffe7d1;" \| Deposition, Chemical Vapor
	! scope="col" style="text-align:center; background-color:#FFFFFF;" \|$60/hr		! scope="col" style="text-align:center; background-color:#FFFFFF;" \|$62/hr
	\|-		\|-
	! scope="col" style="text-align:left; background-color:#ffd8b4;" \|Oxford FlexAl ALD/ALE System		! scope="col" style="text-align:left; background-color:#ffd8b4;" \|Oxford FlexAl ALD/ALE System
	! scope="col" style="text-align:left; background-color:#ffe7d1;" \|Deposition, Chemical Vapor		! scope="col" style="text-align:left; background-color:#ffe7d1;" \|Deposition, Chemical Vapor
	! scope="col" style="text-align:center; background-color:#FFFFFF;" \|$50/hr		! scope="col" style="text-align:center; background-color:#FFFFFF;" \|$60/hr
	\|-		\|-
	! scope="col" style="text-align:left; background-color:#ffd8b4;" \|Oxford III-V Etch System		! scope="col" style="text-align:left; background-color:#ffd8b4;" \|Oxford III-V Etch System
	! scope="col" style="text-align:left; background-color:#ffe7d1;" \| Etch, RIE		! scope="col" style="text-align:left; background-color:#ffe7d1;" \| Etch, RIE
	! scope="col" style="text-align:center; background-color:#FFFFFF;" \|$40/hr		! scope="col" style="text-align:center; background-color:#FFFFFF;" \|$41/hr
	\|-		\|-
	! scope="col" style="text-align:left; background-color:#ffd8b4;" \|Oxford Dielectric Etch System		! scope="col" style="text-align:left; background-color:#ffd8b4;" \|Oxford Dielectric Etch System
	! scope="col" style="text-align:left; background-color:#ffe7d1;" \| Etch, RIE		! scope="col" style="text-align:left; background-color:#ffe7d1;" \| Etch, RIE
	! scope="col" style="text-align:center; background-color:#FFFFFF;" \|$40/hr		! scope="col" style="text-align:center; background-color:#FFFFFF;" \|$41/hr
	\|-		\|-
	! scope="col" style="text-align:left; background-color:#ffd8b4;" \|Oxford DRIE Etch System		! scope="col" style="text-align:left; background-color:#ffd8b4;" \|Oxford DRIE Etch System
	! scope="col" style="text-align:left; background-color:#ffe7d1;" \| Etch, RIE		! scope="col" style="text-align:left; background-color:#ffe7d1;" \| Etch, RIE
	! scope="col" style="text-align:center; background-color:#FFFFFF;" \|$40/hr		! scope="col" style="text-align:center; background-color:#FFFFFF;" \|$41/hr
	\|-		\|-
	! scope="col" style="text-align:left; background-color:#ffd8b4;" \|Oxford PECVD (legacy) - amorphous Si		! scope="col" style="text-align:left; background-color:#ffd8b4;" \|Oxford PECVD (legacy) - amorphous Si
	! scope="col" style="text-align:left; background-color:#ffe7d1;" \| Deposition, Chemical Vapor		! scope="col" style="text-align:left; background-color:#ffe7d1;" \| Deposition, Chemical Vapor
	! scope="col" style="text-align:center; background-color:#FFFFFF;" \|$40/hr		! scope="col" style="text-align:center; background-color:#FFFFFF;" \|$41/hr
	\|-		\|-
	! scope="col" style="text-align:left; background-color:#ffd8b4;" \|Nanoscribe PPGT		! scope="col" style="text-align:left; background-color:#ffd8b4;" \|Nanoscribe PPGT
	! scope="col" style="text-align:left; background-color:#ffe7d1;" \| 2D/3D Print		! scope="col" style="text-align:left; background-color:#ffe7d1;" \| 2D/3D Print
	! scope="col" style="text-align:center; background-color:#FFFFFF;" \|$5/hr		! scope="col" style="text-align:center; background-color:#FFFFFF;" \|$8/hr
	\|}		\|}

Line 66:		Line 66:
	A 50% discount will be applied to the General Cleanroom rate for any cleanroom usage accrued ''after'' 40 hours per calendar month. The discounted hourly rate, $21.50, is only applied to the hours that exceed 40 in a given month.		A 50% discount will be applied to the General Cleanroom rate for any cleanroom usage accrued ''after'' 40 hours per calendar month. The discounted hourly rate, $21.50, is only applied to the hours that exceed 40 in a given month.

	Example: A user logs 50 hours in the cleanroom during the month of October. Their invoice will be: (40 x $43) + (10 x $21.50) = $1,~~935~~		Example: A user logs 50 hours in the cleanroom during the month of October. Their invoice will be: (40 x $44) + (10 x $22.00) = $1,980

	'''General Lab use is counted as time spent in the KNI cleanroom facility. It includes access to the following resources:'''		'''General Lab use is counted as time spent in the KNI cleanroom facility. It includes access to the following resources:'''
Line 113:		Line 113:

	==Overhead/Indirect Cost Rate ==		==Overhead/Indirect Cost Rate ==
	The KNI Lab charges for Non-Caltech Academic, Government, and Corporate KNI lab members are subject to Caltech's F&A (indirect/"overhead") rate. The F&A rate for fiscal year ~~2026~~ is 70%.		The KNI Lab charges for Non-Caltech Academic, Government, and Corporate KNI lab members are subject to Caltech's F&A (indirect/"overhead") rate. The F&A rate for fiscal year 2027 is 70%.
	Internal (Caltech and JPL) users will also have overhead applied to their charges. The overhead is accounted for in the back end of the internal charging process and the overhead rate is dependent on the PTA used to pay for the KNI Lab fees. If you have questions about this, please discuss with your grants manager.		Internal (Caltech and JPL) users will also have overhead applied to their charges. The overhead is accounted for in the back end of the internal charging process and the overhead rate is dependent on the PTA used to pay for the KNI Lab fees. If you have questions about this, please discuss with your grants manager.