The KNI Lab at Caltech - User contributions [en]

FlexAL II: Atomic Layer Deposition (ALD)

2021-07-30T18:36:58Z

Nathslee:

{{InstrumentInfoboxOneImage|
|InstrumentName = Atomic Layer Deposition (ALD)
|HeaderColor = #F2682A
|ImageOne = FlexAL-II-ALD.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Deposition|Deposition]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Nathan S. Lee]]
|StaffEmail = nathslee@caltech.edu
|StaffPhone = 626-395-1319
|Manufacturer = Oxford Instruments
|Techniques = Atomic Layer Deposition of Oxides and Nitrides
|EmailList = kni-ald
|EmailListName = Oxford FlexAl ALD
|Model = FlexAL II
}}
== Description ==
The Atomic Layer Deposition (ALD) system is an Oxford Instruments Plasma Technology FlexAL II platform that is designed to grow thin films one atomic layer at a time under very precise deposition conditions. It is configured with a 240 mm diameter resistance-heated, RF-biased aluminum electrode with temperature control to 600 °C, and substrate sizes up to 6 inches (150 mm), with optional configuration for 8 inches (200 mm). There is an inductively-coupled plasma (ICP) source for plasma-enhanced ALD, as well as the more traditional thermal processes, with six precursor gases to grow a variety of high-purity oxides and nitrides.

Some film examples by KNI lab members include thermally-grown conductive TiO2 as protective coatings for semiconducting photoanodes in water-splitting cells, thermal and plasma-assisted Al2O3 and HfO2 as gate dielectrics in 2D transition metal dichalcogenide materials, as well as NbN and TiN deposition.

===== Applications =====
* Aluminum oxide and nitride deposition
* Silicon dioxide and nitride deposition
* Titanium oxide and nitride deposition
* Hafnium oxide deposition
* Niobium oxide and nitride deposition
* Deposition of other films can be made available upon request

===== Allowed material in ALD System =====
* Si, SixNy, SiO2, SOI
* Hard masks compatible with process temperature

===== ALD Gas List (links to SDS) =====
* [https://caltech.box.com/s/4ydr6ju2pbvulef7e0vzlb8i58nijkrg SF6]
* [https://caltech.box.com/s/s3oi147iafil7ruil2dwgw5kxn9je2a5 N2]
* [https://caltech.box.com/s/sar0sdkzrjyvzh63gww199558297rzaj O2]
* [https://caltech.box.com/s/f08m19vgz2sir41vzqdkql4wcpcsc7nz O3]
* [https://caltech.box.com/s/g4r8qnbmn4gfdly1knni5rhnubpuq0zv NH3]
* [https://caltech.box.com/s/f6080rhdsuu8mblne62c02oapl7319cg H2]
* [https://caltech.box.com/s/djtj0j1671dvo6to8x0t56g2b8ekvmrz Ar]

===== ALD Precursor List (Links to SDS) =====
* [https://caltech.box.com/s/hff83jq4x96new2sgczzvwgacy7tsl0e TMA (aluminum)]
* [https://caltech.box.com/s/pkjuqifvnzle2eanykhvhe4m8hu6qgye TDMAT (titanium)]
* [https://caltech.box.com/s/jurskhuqjxhpnmtl5iwfmgpj8d3apmy3 BTBAS (silicon)]
* [https://caltech.box.com/s/6zdhb6n1yr78wgy9mtjzqkljo75vxb75 TDMAH (hafnium)]
* [https://caltech.box.com/s/pznx6n00avfmmp47h3esqkkc7hsrw04d TBTDEN (niobium)]
* Others upon request

== Resources ==
===== Equipment Data =====
* [https://caltech.box.com/s/lul90odaqj4rp9inb6qt2mft2ean0qqa Deposition Pass-down equipment information]
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/97mn2fyncejg6d4uo5lwtyl98w8n9gd2 KNI SOP]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]

===== Process Documents (login to LabRunr required)=====
* [https://labrunr.caltech.edu/machinefiles/154/Oxford%20Instruments%20ALD%20Materials%20Example%20Guide%20-%202017-10-25.pdf Oxford Instruments ALD Materials Example Guide]
* [https://labrunr.caltech.edu/machinefiles/154/OxfordInstruments%20ALD%20-%20gases%20and%20precursors.pdf Oxford Instruments ALD gases and precursors]
* [https://labrunr.caltech.edu/machinefiles/154/CalTech_Process_Visit_Report_Final.pdf Oxford Instruments ALD Process Acceptance report]
* [https://labrunr.caltech.edu/machinefiles/154/process%20infor%20for%20Caltech_v2.pdf Oxford Instruments ALD Process Information guidance]
* [https://labrunr.caltech.edu/machinefiles/154/ALD%20Bias%20Control%20Oxford%20Instruments.pdf Oxford Instruments ALD Bias Control]

===== Process Resources =====
* [https://caltech.box.com/s/rw25s9zzka0adhgclxr9ppxpoyduanx7 Aluminum Nitride (AlN)]
* [https://caltech.box.com/s/o0lmo99pz3p4cjihmytmvqbvmq5pr1yg Aluminum Oxide (Al2O3)]
* [https://caltech.box.com/s/gvmfu3np83ehfwub7ebuuajyia52thv0 Hafnium Oxide (HfO2)]
* [https://caltech.box.com/s/h7x9a3i8uj55hbahpam9fzni967fjnkp Silicon Nitride (Si3N4)]
* [https://caltech.box.com/s/zaloyrsabapa5b7pvnjxglsgfjeux1zx Titanium Nitride (TiN)]
* [https://caltech.box.com/s/knpefm73sdjsnd7zmo78mr6h273eyx2n Titanium Oxide (TiO2)]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/154/FlexAL_II_IDS_EN_10.pdf Oxford FlexAL ALD System manual] (login to LabRunr)
* [https://caltech.box.com/s/tgypp7gvwxtk8um4pmybietd29fj7htj Adixen 4 Series Multistage Roots dry pumps brochure]
* [https://caltech.box.com/s/eubo1b949weunxvwkti50jhi7nuh7mgb NovaSafe exhaust abatement system manual]
* [https://labrunr.caltech.edu/machinefiles/154/OzoneDel_MAN_EN_1A.PDF Oxford Ozone Delivery module manual] (login to LabRunr)
* [https://caltech.box.com/s/8n7k2wiwqzxlpt32uaj2rwvf7maqu9xl Oxford FlexAl system drawings] (login to LabRunr)

== Specifications ==
===== System Features =====
* FlexAL ALD Process Module
* The chamber is electrically heated to 150 °C
* Two ports at 70° angle from normal for ellipsometry and an additional port for analytical equipment such as RGA
* Precursor Multi-Bubbler Cabinet 6 Way
* Standard Gas Pod externally mounted (8 lines max)
* 4 each Standard gasline and MFC for non-toxic gases
* 3 each By-passed gasline and MFC for toxic gases
* Ozone delivery system for ALD with up to 22% w/w ozone concentration
* Chamber turbo pump Pfeiffer/Adixen ATH500M, ISO200 pipework, APC & heated backing valve kit
* Chamber process pump Pfeiffer/Adixen A604H kit
* FlexAL compact single wafer load lock kit
* Load Lock dry pump kit
* PC & 19" monitor
===== System Specifications =====
* ICP 65 plasma source with 600 W 13.56 MHz RF Generator & AMU
* ALD 600 °C biasable Inconel electrode
* Heated 250 mTorr high resolution temperature compensated capacitance manometer
* ALD 100 mm pumping pipework plus 100 mm fast APC
* Process Acceptance criteria for thermal and plasma Al2O3 and TiO2

== Related Instrumentation in the KNI ==
===== Sputtering Systems =====
* [[ATC Orion 8: Dielectric Sputter System|ATC Orion 8: Dielectric Sputter System]]
* [[ATC Orion 8: Chalcogenide Sputter System|ATC Orion 8: Chalcogenide Sputter System]]

===== Electron Beam Evaporation Systems =====
* [[Labline: Electron Beam Evaporator|Labline: Electron Beam Evaporator]]
* [[CHA: Electron Beam Evaporator|CHA: Electron Beam Evaporator]]

===== Chemical Vapor Deposition =====
* [[FlexAL II: Atomic Layer Deposition (ALD)|FlexAL II: Atomic Layer Deposition (ALD)]]
* [[Plasma-Enhanced Chemical Vapor Deposition (PECVD)|Plasma-Enhanced Chemical Vapor Deposition (PECVD)]]

Silicon Deposition: Oxford Instruments Plasmalab System 100 PECVD

2021-05-04T00:36:23Z

Nathslee:

{{InstrumentInfoboxOneImage|
|InstrumentName = PECVD
|HeaderColor = #F2682A
|ImageOne = PECVD_Oxford-System-100.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Deposition|Deposition]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Nathan S. Lee]]
|StaffEmail = nathslee@caltech.edu
|StaffPhone = 626-395-1319
|Manufacturer = Oxford Instruments
|Model = Plasmalab System 100
|Techniques = Amorphous Silicon Deposition, Silicon Dioxide Deposition, Silicon Nitride Deposition
|EmailList = kni-oxfordpecvd
|EmailListName = Oxford PECVD
}}
== Description ==
The Plasma-Enhanced Chemical Vapor Deposition (PECVD) system is an Oxford Instruments Plasma Technology Plasmalab System 100 platform that is optimized for amorphous silicon, silicon dioxide, and silicon nitride deposition. The PECVD has a variable temperature stage (RT to 600 °C). This system supports wafer sizes up to 6 inches, and provides PECVD film growth over a wide range of process conditions.
===== Applications =====
* Amorphous Silicon Deposition
* Silicon Dioxide Deposition
* Silicon Nitride Deposition
===== Allowed material in PECVD System =====
* Si, SixNy, SiO2, SOI
* Hard masks compatible with process temperature
===== PECVD Gas List =====
* 5% SiH4 in N2
* 5% SiH4 in Ar
* NH3
* N2O
* N2
* Mixture of CF4 and O2 (4:1) for Plasma Clean

== Resources ==

===== Equipment Data =====
* [https://caltech.box.com/s/lul90odaqj4rp9inb6qt2mft2ean0qqa Deposition Pass-down equipment information]
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/c8qx3ikzjb05x44o4updpqs36ra39ytw KNI SOP]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]
===== Process Documents =====
* [https://caltech.box.com/s/qnxzioeoudzbnow9aopguf9xkysxsey3 KNI's Amorphous Silicon recipe]
* [https://caltech.box.com/s/gy10uau7tikhvhakgpjvlzalb7boavbv KNI's 350C SiO2 recipe]
* [https://caltech.box.com/s/0e14n82o7o9yziqmlygkakfcv1lp65iu Process Standards]
* [https://caltech.box.com/s/6b2ivuuguflqjaqby5werlcslmmudryf High rate SiOx]
* [https://caltech.box.com/s/vi6vb1nz8thm3sflt5ncoyhi62tomi82 High rate SiNx]
* [https://caltech.box.com/s/tc4j0yr2jazv0rd6ey22ri8jd1asl326 Low Rate SiOx]
* [https://caltech.box.com/s/r3socf5rslp7qs9rb5o7vvpyp12qf0ps Low rate SiNx]
* [https://caltech.box.com/s/6acyh95hslt0q711makbllgqjrexpew1 Amorphous Silicon Deposition (Silane/helium)]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/116/System%20Manual%20for%20Caltech%2094-219848.pdf Oxford PECVD System Manual]
* [https://caltech.box.com/s/zqfonyv64m2m76mo8b4xn63ljz9ee4i5 Alcatel ADS 602P dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/kvgp7d7zx9gczapf7iun791m234vevod Manufacturer Data Sheet]
===== System Features =====
* Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* PECVD process chamber with 160 mm pumping port, view port, and an additional rear port for optical emission end-point-detection
* Heated upper electrode to prevent condensation of low vapor pressure precursors
* PECVD 205 mm electrically heated (700 °C) lower electrode with central wafer lift mechanism
* Parameter ramping software
* 5 Torr capacitance manometer for process control, and penning for base pressure measurement
* Process chamber pumping with 63 mm branch to APC, and isolation valve; chamber base pressure turbo, backed by a refurbished dry pump with roots
* Twelve line gas pod with two non-toxic and treeh toxic digital mass-flow-controlled gas lines and cleaning gas
* Chamber Gas ring, with split gas manifold
* Liquid vapor delivery system
* Single-wafer automatic insertion load lock with soft pump option
===== System Specifications =====
* Chamber wall heating 80 °C
* 30/300 W RF generator close-coupled to the upper electrode through an automatic matching unit; the generator is configured to operate in a low-power mode (0-30 W) for higher accuracy during low-rate deposition processes
* 600 W solid-state 50-460 kHz LF generator

== Related Instrumentation in the KNI ==
===== Sputtering Systems =====
* [[ATC Orion 8: Dielectric Sputter System|ATC Orion 8: Dielectric Sputter System]]
* [[ATC Orion 8: Chalcogenide Sputter System|ATC Orion 8: Chalcogenide Sputter System]]

===== Electron Beam Evaporation Systems =====
* [[Labline: Electron Beam Evaporator|Labline: Electron Beam Evaporator]]
* [[CHA: Electron Beam Evaporator|CHA: Electron Beam Evaporator]]

===== Chemical Vapor Deposition =====
* [[FlexAL II: Atomic Layer Deposition (ALD)|FlexAL II: Atomic Layer Deposition (ALD)]]
* [[Plasma-Enhanced Chemical Vapor Deposition (PECVD)|Plasma-Enhanced Chemical Vapor Deposition (PECVD)]]

Silicon Deposition: Oxford Instruments Plasmalab System 100 PECVD

2020-08-04T19:08:47Z

Nathslee: /* PECVD Gas List */

{{InstrumentInfoboxOneImage|
|InstrumentName = PECVD
|HeaderColor = #F2682A
|ImageOne = PECVD_Oxford-System-100.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Deposition|Deposition]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Nathan S. Lee]]
|StaffEmail = nathslee@caltech.edu
|StaffPhone = 626-395-1319
|Manufacturer = Oxford Instruments
|Model = Plasmalab System 100
|Techniques = Amorphous Silicon Deposition, Silicon Dioxide Deposition, Silicon Nitride Deposition
|EmailList = kni-oxfordpecvd
|EmailListName = Oxford PECVD
}}
== Description ==
The Plasma-Enhanced Chemical Vapor Deposition (PECVD) system is an Oxford Instruments Plasma Technology Plasmalab System 100 platform that is optimized for amorphous silicon, silicon dioxide, and silicon nitride deposition. The PECVD has a variable temperature stage (RT to 600 °C). This system supports wafer sizes up to 6 inches, and provides PECVD film growth over a wide range of process conditions.
===== Applications =====
* Amorphous Silicon Deposition
* Silicon Dioxide Deposition
* Silicon Nitride Deposition
===== Allowed material in PECVD System =====
* Si, SixNy, SiO2, SOI
* Hard masks compatible with process temperature
===== PECVD Gas List =====
* 5% SiH4 in N2
* 5% SiH4 in Ar
* NH3
* N2O
* N2
* Mixture of CF4 and O2 (4:1) for Plasma Clean

== Resources ==
===== Current PECVD Table Temperature =====
* 30C for chamber cleaning (8/4/20)
* To be set to 200C for a-Si and SiO2 by afternoon 8/4/20

===== Equipment Data =====
* [https://caltech.box.com/s/lul90odaqj4rp9inb6qt2mft2ean0qqa Deposition Pass-down equipment information]
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/c8qx3ikzjb05x44o4updpqs36ra39ytw KNI SOP]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]
===== Process Documents =====
* [https://caltech.box.com/s/qnxzioeoudzbnow9aopguf9xkysxsey3 KNI's Amorphous Silicon recipe]
* [https://caltech.box.com/s/gy10uau7tikhvhakgpjvlzalb7boavbv KNI's 350C SiO2 recipe]
* [https://caltech.box.com/s/0e14n82o7o9yziqmlygkakfcv1lp65iu Process Standards]
* [https://caltech.box.com/s/6b2ivuuguflqjaqby5werlcslmmudryf High rate SiOx]
* [https://caltech.box.com/s/vi6vb1nz8thm3sflt5ncoyhi62tomi82 High rate SiNx]
* [https://caltech.box.com/s/tc4j0yr2jazv0rd6ey22ri8jd1asl326 Low Rate SiOx]
* [https://caltech.box.com/s/r3socf5rslp7qs9rb5o7vvpyp12qf0ps Low rate SiNx]
* [https://caltech.box.com/s/6acyh95hslt0q711makbllgqjrexpew1 Amorphous Silicon Deposition (Silane/helium)]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/116/System%20Manual%20for%20Caltech%2094-219848.pdf Oxford PECVD System Manual]
* [https://caltech.box.com/s/zqfonyv64m2m76mo8b4xn63ljz9ee4i5 Alcatel ADS 602P dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/kvgp7d7zx9gczapf7iun791m234vevod Manufacturer Data Sheet]
===== System Features =====
* Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* PECVD process chamber with 160 mm pumping port, view port, and an additional rear port for optical emission end-point-detection
* Heated upper electrode to prevent condensation of low vapor pressure precursors
* PECVD 205 mm electrically heated (700 °C) lower electrode with central wafer lift mechanism
* Parameter ramping software
* 5 Torr capacitance manometer for process control, and penning for base pressure measurement
* Process chamber pumping with 63 mm branch to APC, and isolation valve; chamber base pressure turbo, backed by a refurbished dry pump with roots
* Twelve line gas pod with two non-toxic and treeh toxic digital mass-flow-controlled gas lines and cleaning gas
* Chamber Gas ring, with split gas manifold
* Liquid vapor delivery system
* Single-wafer automatic insertion load lock with soft pump option
===== System Specifications =====
* Chamber wall heating 80 °C
* 30/300 W RF generator close-coupled to the upper electrode through an automatic matching unit; the generator is configured to operate in a low-power mode (0-30 W) for higher accuracy during low-rate deposition processes
* 600 W solid-state 50-460 kHz LF generator

== Related Instrumentation in the KNI ==
===== Sputtering Systems =====
* [[ATC Orion 8: Dielectric Sputter System|ATC Orion 8: Dielectric Sputter System]]
* [[ATC Orion 8: Chalcogenide Sputter System|ATC Orion 8: Chalcogenide Sputter System]]

===== Electron Beam Evaporation Systems =====
* [[Labline: Electron Beam Evaporator|Labline: Electron Beam Evaporator]]
* [[CHA: Electron Beam Evaporator|CHA: Electron Beam Evaporator]]

===== Chemical Vapor Deposition =====
* [[FlexAL II: Atomic Layer Deposition (ALD)|FlexAL II: Atomic Layer Deposition (ALD)]]
* [[Plasma-Enhanced Chemical Vapor Deposition (PECVD)|Plasma-Enhanced Chemical Vapor Deposition (PECVD)]]

Silicon Deposition: Oxford Instruments Plasmalab System 100 PECVD

2020-08-04T19:03:17Z

Nathslee: /* PECVD Gas List */

{{InstrumentInfoboxOneImage|
|InstrumentName = PECVD
|HeaderColor = #F2682A
|ImageOne = PECVD_Oxford-System-100.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Deposition|Deposition]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Nathan S. Lee]]
|StaffEmail = nathslee@caltech.edu
|StaffPhone = 626-395-1319
|Manufacturer = Oxford Instruments
|Model = Plasmalab System 100
|Techniques = Amorphous Silicon Deposition, Silicon Dioxide Deposition, Silicon Nitride Deposition
|EmailList = kni-oxfordpecvd
|EmailListName = Oxford PECVD
}}
== Description ==
The Plasma-Enhanced Chemical Vapor Deposition (PECVD) system is an Oxford Instruments Plasma Technology Plasmalab System 100 platform that is optimized for amorphous silicon, silicon dioxide, and silicon nitride deposition. The PECVD has a variable temperature stage (RT to 600 °C). This system supports wafer sizes up to 6 inches, and provides PECVD film growth over a wide range of process conditions.
===== Applications =====
* Amorphous Silicon Deposition
* Silicon Dioxide Deposition
* Silicon Nitride Deposition
===== Allowed material in PECVD System =====
* Si, SixNy, SiO2, SOI
* Hard masks compatible with process temperature
===== PECVD Gas List =====
* 5% SiH4 in N2
* 5% SiH4 in Ar
* NH3
* N2O
* N2
* 80%CF4/O2

== Resources ==
===== Current PECVD Table Temperature =====
* 30C for chamber cleaning (8/4/20)
* To be set to 200C for a-Si and SiO2 by afternoon 8/4/20

===== Equipment Data =====
* [https://caltech.box.com/s/lul90odaqj4rp9inb6qt2mft2ean0qqa Deposition Pass-down equipment information]
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/c8qx3ikzjb05x44o4updpqs36ra39ytw KNI SOP]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]
===== Process Documents =====
* [https://caltech.box.com/s/qnxzioeoudzbnow9aopguf9xkysxsey3 KNI's Amorphous Silicon recipe]
* [https://caltech.box.com/s/gy10uau7tikhvhakgpjvlzalb7boavbv KNI's 350C SiO2 recipe]
* [https://caltech.box.com/s/0e14n82o7o9yziqmlygkakfcv1lp65iu Process Standards]
* [https://caltech.box.com/s/6b2ivuuguflqjaqby5werlcslmmudryf High rate SiOx]
* [https://caltech.box.com/s/vi6vb1nz8thm3sflt5ncoyhi62tomi82 High rate SiNx]
* [https://caltech.box.com/s/tc4j0yr2jazv0rd6ey22ri8jd1asl326 Low Rate SiOx]
* [https://caltech.box.com/s/r3socf5rslp7qs9rb5o7vvpyp12qf0ps Low rate SiNx]
* [https://caltech.box.com/s/6acyh95hslt0q711makbllgqjrexpew1 Amorphous Silicon Deposition (Silane/helium)]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/116/System%20Manual%20for%20Caltech%2094-219848.pdf Oxford PECVD System Manual]
* [https://caltech.box.com/s/zqfonyv64m2m76mo8b4xn63ljz9ee4i5 Alcatel ADS 602P dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/kvgp7d7zx9gczapf7iun791m234vevod Manufacturer Data Sheet]
===== System Features =====
* Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* PECVD process chamber with 160 mm pumping port, view port, and an additional rear port for optical emission end-point-detection
* Heated upper electrode to prevent condensation of low vapor pressure precursors
* PECVD 205 mm electrically heated (700 °C) lower electrode with central wafer lift mechanism
* Parameter ramping software
* 5 Torr capacitance manometer for process control, and penning for base pressure measurement
* Process chamber pumping with 63 mm branch to APC, and isolation valve; chamber base pressure turbo, backed by a refurbished dry pump with roots
* Twelve line gas pod with two non-toxic and treeh toxic digital mass-flow-controlled gas lines and cleaning gas
* Chamber Gas ring, with split gas manifold
* Liquid vapor delivery system
* Single-wafer automatic insertion load lock with soft pump option
===== System Specifications =====
* Chamber wall heating 80 °C
* 30/300 W RF generator close-coupled to the upper electrode through an automatic matching unit; the generator is configured to operate in a low-power mode (0-30 W) for higher accuracy during low-rate deposition processes
* 600 W solid-state 50-460 kHz LF generator

== Related Instrumentation in the KNI ==
===== Sputtering Systems =====
* [[ATC Orion 8: Dielectric Sputter System|ATC Orion 8: Dielectric Sputter System]]
* [[ATC Orion 8: Chalcogenide Sputter System|ATC Orion 8: Chalcogenide Sputter System]]

===== Electron Beam Evaporation Systems =====
* [[Labline: Electron Beam Evaporator|Labline: Electron Beam Evaporator]]
* [[CHA: Electron Beam Evaporator|CHA: Electron Beam Evaporator]]

===== Chemical Vapor Deposition =====
* [[FlexAL II: Atomic Layer Deposition (ALD)|FlexAL II: Atomic Layer Deposition (ALD)]]
* [[Plasma-Enhanced Chemical Vapor Deposition (PECVD)|Plasma-Enhanced Chemical Vapor Deposition (PECVD)]]

Silicon Deposition: Oxford Instruments Plasmalab System 100 PECVD

2020-08-04T17:27:52Z

Nathslee: /* Current PECVD Table Temperature */

{{InstrumentInfoboxOneImage|
|InstrumentName = PECVD
|HeaderColor = #F2682A
|ImageOne = PECVD_Oxford-System-100.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Deposition|Deposition]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Nathan S. Lee]]
|StaffEmail = nathslee@caltech.edu
|StaffPhone = 626-395-1319
|Manufacturer = Oxford Instruments
|Model = Plasmalab System 100
|Techniques = Amorphous Silicon Deposition, Silicon Dioxide Deposition, Silicon Nitride Deposition
|EmailList = kni-oxfordpecvd
|EmailListName = Oxford PECVD
}}
== Description ==
The Plasma-Enhanced Chemical Vapor Deposition (PECVD) system is an Oxford Instruments Plasma Technology Plasmalab System 100 platform that is optimized for amorphous silicon, silicon dioxide, and silicon nitride deposition. The PECVD has a variable temperature stage (RT to 600 °C). This system supports wafer sizes up to 6 inches, and provides PECVD film growth over a wide range of process conditions.
===== Applications =====
* Amorphous Silicon Deposition
* Silicon Dioxide Deposition
* Silicon Nitride Deposition
===== Allowed material in PECVD System =====
* Si, SixNy, SiO2, SOI
* Hard masks compatible with process temperature
===== PECVD Gas List =====
* SiH4 (5% in N2 and Ar)
* NH3
* N2O
* N2
* 80%CF4/O2

== Resources ==
===== Current PECVD Table Temperature =====
* 30C for chamber cleaning (8/4/20)
* To be set to 200C for a-Si and SiO2 by afternoon 8/4/20

===== Equipment Data =====
* [https://caltech.box.com/s/lul90odaqj4rp9inb6qt2mft2ean0qqa Deposition Pass-down equipment information]
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/c8qx3ikzjb05x44o4updpqs36ra39ytw KNI SOP]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]
===== Process Documents =====
* [https://caltech.box.com/s/qnxzioeoudzbnow9aopguf9xkysxsey3 KNI's Amorphous Silicon recipe]
* [https://caltech.box.com/s/gy10uau7tikhvhakgpjvlzalb7boavbv KNI's 350C SiO2 recipe]
* [https://caltech.box.com/s/0e14n82o7o9yziqmlygkakfcv1lp65iu Process Standards]
* [https://caltech.box.com/s/6b2ivuuguflqjaqby5werlcslmmudryf High rate SiOx]
* [https://caltech.box.com/s/vi6vb1nz8thm3sflt5ncoyhi62tomi82 High rate SiNx]
* [https://caltech.box.com/s/tc4j0yr2jazv0rd6ey22ri8jd1asl326 Low Rate SiOx]
* [https://caltech.box.com/s/r3socf5rslp7qs9rb5o7vvpyp12qf0ps Low rate SiNx]
* [https://caltech.box.com/s/6acyh95hslt0q711makbllgqjrexpew1 Amorphous Silicon Deposition (Silane/helium)]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/116/System%20Manual%20for%20Caltech%2094-219848.pdf Oxford PECVD System Manual]
* [https://caltech.box.com/s/zqfonyv64m2m76mo8b4xn63ljz9ee4i5 Alcatel ADS 602P dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/kvgp7d7zx9gczapf7iun791m234vevod Manufacturer Data Sheet]
===== System Features =====
* Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* PECVD process chamber with 160 mm pumping port, view port, and an additional rear port for optical emission end-point-detection
* Heated upper electrode to prevent condensation of low vapor pressure precursors
* PECVD 205 mm electrically heated (700 °C) lower electrode with central wafer lift mechanism
* Parameter ramping software
* 5 Torr capacitance manometer for process control, and penning for base pressure measurement
* Process chamber pumping with 63 mm branch to APC, and isolation valve; chamber base pressure turbo, backed by a refurbished dry pump with roots
* Twelve line gas pod with two non-toxic and treeh toxic digital mass-flow-controlled gas lines and cleaning gas
* Chamber Gas ring, with split gas manifold
* Liquid vapor delivery system
* Single-wafer automatic insertion load lock with soft pump option
===== System Specifications =====
* Chamber wall heating 80 °C
* 30/300 W RF generator close-coupled to the upper electrode through an automatic matching unit; the generator is configured to operate in a low-power mode (0-30 W) for higher accuracy during low-rate deposition processes
* 600 W solid-state 50-460 kHz LF generator

== Related Instrumentation in the KNI ==
===== Sputtering Systems =====
* [[ATC Orion 8: Dielectric Sputter System|ATC Orion 8: Dielectric Sputter System]]
* [[ATC Orion 8: Chalcogenide Sputter System|ATC Orion 8: Chalcogenide Sputter System]]

===== Electron Beam Evaporation Systems =====
* [[Labline: Electron Beam Evaporator|Labline: Electron Beam Evaporator]]
* [[CHA: Electron Beam Evaporator|CHA: Electron Beam Evaporator]]

===== Chemical Vapor Deposition =====
* [[FlexAL II: Atomic Layer Deposition (ALD)|FlexAL II: Atomic Layer Deposition (ALD)]]
* [[Plasma-Enhanced Chemical Vapor Deposition (PECVD)|Plasma-Enhanced Chemical Vapor Deposition (PECVD)]]

Silicon Deposition: Oxford Instruments Plasmalab System 100 PECVD

2020-08-04T17:24:00Z

Nathslee: /* Resources */

{{InstrumentInfoboxOneImage|
|InstrumentName = PECVD
|HeaderColor = #F2682A
|ImageOne = PECVD_Oxford-System-100.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Deposition|Deposition]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Nathan S. Lee]]
|StaffEmail = nathslee@caltech.edu
|StaffPhone = 626-395-1319
|Manufacturer = Oxford Instruments
|Model = Plasmalab System 100
|Techniques = Amorphous Silicon Deposition, Silicon Dioxide Deposition, Silicon Nitride Deposition
|EmailList = kni-oxfordpecvd
|EmailListName = Oxford PECVD
}}
== Description ==
The Plasma-Enhanced Chemical Vapor Deposition (PECVD) system is an Oxford Instruments Plasma Technology Plasmalab System 100 platform that is optimized for amorphous silicon, silicon dioxide, and silicon nitride deposition. The PECVD has a variable temperature stage (RT to 600 °C). This system supports wafer sizes up to 6 inches, and provides PECVD film growth over a wide range of process conditions.
===== Applications =====
* Amorphous Silicon Deposition
* Silicon Dioxide Deposition
* Silicon Nitride Deposition
===== Allowed material in PECVD System =====
* Si, SixNy, SiO2, SOI
* Hard masks compatible with process temperature
===== PECVD Gas List =====
* SiH4 (5% in N2 and Ar)
* NH3
* N2O
* N2
* 80%CF4/O2

== Resources ==
===== Current PECVD Table Temperature =====
30C for chamber cleaning (8/4/20)
To be set to 200C for a-Si and SiO2 by noon, 8/4/20
===== Equipment Data =====
* [https://caltech.box.com/s/lul90odaqj4rp9inb6qt2mft2ean0qqa Deposition Pass-down equipment information]
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/c8qx3ikzjb05x44o4updpqs36ra39ytw KNI SOP]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]
===== Process Documents =====
* [https://caltech.box.com/s/qnxzioeoudzbnow9aopguf9xkysxsey3 KNI's Amorphous Silicon recipe]
* [https://caltech.box.com/s/gy10uau7tikhvhakgpjvlzalb7boavbv KNI's 350C SiO2 recipe]
* [https://caltech.box.com/s/0e14n82o7o9yziqmlygkakfcv1lp65iu Process Standards]
* [https://caltech.box.com/s/6b2ivuuguflqjaqby5werlcslmmudryf High rate SiOx]
* [https://caltech.box.com/s/vi6vb1nz8thm3sflt5ncoyhi62tomi82 High rate SiNx]
* [https://caltech.box.com/s/tc4j0yr2jazv0rd6ey22ri8jd1asl326 Low Rate SiOx]
* [https://caltech.box.com/s/r3socf5rslp7qs9rb5o7vvpyp12qf0ps Low rate SiNx]
* [https://caltech.box.com/s/6acyh95hslt0q711makbllgqjrexpew1 Amorphous Silicon Deposition (Silane/helium)]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/116/System%20Manual%20for%20Caltech%2094-219848.pdf Oxford PECVD System Manual]
* [https://caltech.box.com/s/zqfonyv64m2m76mo8b4xn63ljz9ee4i5 Alcatel ADS 602P dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/kvgp7d7zx9gczapf7iun791m234vevod Manufacturer Data Sheet]
===== System Features =====
* Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* PECVD process chamber with 160 mm pumping port, view port, and an additional rear port for optical emission end-point-detection
* Heated upper electrode to prevent condensation of low vapor pressure precursors
* PECVD 205 mm electrically heated (700 °C) lower electrode with central wafer lift mechanism
* Parameter ramping software
* 5 Torr capacitance manometer for process control, and penning for base pressure measurement
* Process chamber pumping with 63 mm branch to APC, and isolation valve; chamber base pressure turbo, backed by a refurbished dry pump with roots
* Twelve line gas pod with two non-toxic and treeh toxic digital mass-flow-controlled gas lines and cleaning gas
* Chamber Gas ring, with split gas manifold
* Liquid vapor delivery system
* Single-wafer automatic insertion load lock with soft pump option
===== System Specifications =====
* Chamber wall heating 80 °C
* 30/300 W RF generator close-coupled to the upper electrode through an automatic matching unit; the generator is configured to operate in a low-power mode (0-30 W) for higher accuracy during low-rate deposition processes
* 600 W solid-state 50-460 kHz LF generator

== Related Instrumentation in the KNI ==
===== Sputtering Systems =====
* [[ATC Orion 8: Dielectric Sputter System|ATC Orion 8: Dielectric Sputter System]]
* [[ATC Orion 8: Chalcogenide Sputter System|ATC Orion 8: Chalcogenide Sputter System]]

===== Electron Beam Evaporation Systems =====
* [[Labline: Electron Beam Evaporator|Labline: Electron Beam Evaporator]]
* [[CHA: Electron Beam Evaporator|CHA: Electron Beam Evaporator]]

===== Chemical Vapor Deposition =====
* [[FlexAL II: Atomic Layer Deposition (ALD)|FlexAL II: Atomic Layer Deposition (ALD)]]
* [[Plasma-Enhanced Chemical Vapor Deposition (PECVD)|Plasma-Enhanced Chemical Vapor Deposition (PECVD)]]

Process Recipe Library

2020-03-11T19:48:45Z

Nathslee:

You can browse the available recipes below, by lab area. You can also browse directly within the KNI's Box directory. Note that the vast majority of recipes are being made publicly available; only a select few are password-protected for members of the Caltech community:
# [https://caltech.app.box.com/folder/89929833301 All Content (requires login with a caltech.edu email address)]
# [https://caltech.box.com/s/uqtkc7xev3xvda2ueykt7cj1886ok1mg Publicly available content (no login required)]

== Lithography Process Recipes ==
===== Electron Beam Lithography =====
* [https://caltech.box.com/s/0xofm2zqmhzm6tv85ihfnhdhzuo8jpjg KNI Introduction to BEAMER]
* [https://youtu.be/AV-SeYZktu4 How to Spin Photoresist onto Wafers and Pieces (Video)]
* [https://caltech.app.box.com/file/549582924881 ZEP 520A Resist: Procedure for spinning, writing & development (Caltech-only access)]
* [https://caltech.box.com/s/lijnz00qwpk7z5qbz8kn9tjo0kqfgz4a HSQ Resist: Procedure for spinning, writing & development (Caltech-only access)]
* [https://caltech.box.com/s/vg9rpa4ac9e1eki79hfecccpohl3qp6u Performing Aligned EBL Patterning Steps with NPGS on an SEM] | [https://caltech.box.com/s/tl4bliegxptu5tfmzu0p7vs1hcnxtyj8 Alignment Template Files]
* [https://caltech.box.com/s/nwuxjbfm0fp0lb4k12albsr3zbnqk9po Bi-Layer PMMA Resist Spinning Recipe]

===== Helium Ion Beam Lithography =====
* [https://caltech.box.com/s/3s0k77mgx26ytfnafttpoalcknmk7npu Helium Ion Beam Lithography (HIBL) – Parameter Guide]

===== Neon Ion Beam Lithography =====
* [https://caltech.box.com/s/y8k2a4xnan8x2jte2ss587gh2o2pfs4h Ne-FIB Hard Mask Lithography on ALD Films – Parameter Guide]

===== Optical Lithography =====
* [https://caltech.box.com/s/5ls5rk4oanod66pfilsuendthutcmfqu AZ5214 Photoresist spinning procedure]
* [https://caltech.box.com/s/xqwbmcj7l4itj6nqp6lbo7h4vexee0tr AZ9260 Photoresist spinning procedure]
* [https://caltech.box.com/s/6et86m5wlrjf80ew9yo0v8rgjifsdzfs AZ nLof 2000 Photoresist Recipe]
* [https://caltech.box.com/s/3pa2im5jj1e86rdozwigt8yfnb8fi5k3 S1813 Photoresist spinning procedure]

== Deposition Process Recipes ==
===== Sputtering =====
* [https://caltech.box.com/s/z043k1ne91oowp70lzt69kau0u2nq79f SnO2 sputtering recipe]
* [https://caltech.box.com/s/oxxv5sy3j7wbqyjc8r9x2wqheabne2lg NbOx sputtering recipe]
* [https://caltech.box.com/s/95qrpvvggcaztmpc7whd9v9o4d9rih5x TiO2 sputtering recipe]
* [https://caltech.box.com/s/k669kh04xglamkidhuo7xq04xan146xt AlN sputtering recipe]
* [https://caltech.box.com/s/7cqdk2g5ic2wa35lu4y2fu03esfk7sdy Al2O3 sputtering recipe]
* [https://caltech.box.com/s/a49yh35hkb2x5qnskivzde0y8z0o4cpn Guide to maintaining a plasma using gradual pressure changes]

===== Chemical Vapor Deposition (CVD) =====
* [https://caltech.box.com/s/qnxzioeoudzbnow9aopguf9xkysxsey3 PECVD amorphous Si recipe]
* [https://caltech.box.com/s/gy10uau7tikhvhakgpjvlzalb7boavbv PECVD SiO2 (350 C) recipe]

== Etching Process Recipes ==
===== Dry Etching =====
* [https://caltech.box.com/s/8zfqalb9u11l31mj3iwydofa8qecyp47 Aluminum Etch via Chlorine/Methane/Hydrogen]
* [https://caltech.box.com/s/3b9zbdj1uoazz7zbz8png25c2ba65vas Comparison of etch rates using different sample-fixing oils]
* [https://caltech.box.com/s/vbjlzmbprhw1sg3auoz1oso5clwrme87 In-situ (dielectric sputter) RF plasma etch of thermal SiO2]
* [https://caltech.box.com/s/40kaaqur8ohyg55uq2pv3jqrzlgi98ts Comparison of Pseudo-Bosch ICP-RIE Etch of SiO2-SiNx]

===== Wet Etching =====
* [https://caltech.box.com/s/ob0wosa8tp79xo3wa3taxbjy24kya6qs HF etching of SiO2 deposited via wet thermal oxidation]
* [https://caltech.box.com/s/fjww9pngq4fwzbd26iz5rci4cyc5jv0b HF etching of SiO2 deposited via PECVD]

== Microscopy Process Recipes ==
===== Focused Ion Beam (FIB) Systems =====
* [https://caltech.box.com/s/1nmp75l3166vj9t1vwwpwu2zyfc4j6ol Cutting & Imaging Cross-sections with SEM/Ga-FIB]
* [https://caltech.box.com/s/3l3w507dxwosuya3nbxgk30tdqyp4qy9 Preparing TEM Lamella Samples with SEM/Ga-FIB]
** [https://caltech.box.com/s/lhaweqbefmep8n79u4nvynsv0cjctuc1 Process Recipe for TEM Lamella prep for Thin Films on Si Substrates]
* [https://caltech.box.com/s/3s0k77mgx26ytfnafttpoalcknmk7npu Helium Ion Beam Lithography (HIBL) – Parameter Guide]
* [https://caltech.box.com/s/y8k2a4xnan8x2jte2ss587gh2o2pfs4h Ne-FIB Hard Mask Lithography on ALD Films – Parameter Guide]
* [https://caltech.box.com/s/ybdwd4zi39p62bx13rc7f8o54444vuyz Helium Ion Beam Imaging with the Electron Flood Gun – Parameter Guide]
* [https://caltech.box.com/s/qobquoi3hs0izeyhdg5d8px9wmmdzuxw Source Rebuild Guide for ORION NanoFab He- & Ne-FIB]

===== Scanning Electron Microscopes (SEMs) =====
* [https://caltech.box.com/s/e5cdnag69i2w9nm1d0p07fyun4k15b5c Environmental SEM (ESEM) Imaging Guide (for biological and highly non-conductive specimens)]
* [https://caltech.box.com/s/vg9rpa4ac9e1eki79hfecccpohl3qp6u Performing Aligned EBL Patterning Steps with NPGS on an SEM] | [https://caltech.box.com/s/tl4bliegxptu5tfmzu0p7vs1hcnxtyj8 Alignment Template Files]

===== Transmission Electron Microscopes (TEMs) =====
* [https://caltech.box.com/s/fwhkep9qf3bhdygshvfi4dycy2qpmi0i STEM mode EDS on TF-20 TEM (emphasis on high-resolution 2D mapping)]
* [https://caltech.box.com/s/lstv8e5zy94fnt3o0y7urfw41mpesd38 Procedure to Evaluate Selected Area Electron Diffraction (SAED) Patterns]
**[https://caltech.box.com/s/59upcnvhlqulnazm51b0dihd942xebn3 All Resources for SAED Evaluation, including DPs captured of standard samples]

== Thermal Processing ==
===== Wet Oxidation =====
* [https://caltech.box.com/s/nqiiqwlhip4dcult2mtuvvdlxw0gv086 Wet Oxidation at 1000C on Tystar Tube Furnaces]

== Multi-Technique Fabrication Processes ==
* [https://caltech.box.com/s/ohm3fp2h3203yxi6j8peo8bf4v1mz0yt Si-W notched nanopillar fabrication]

Process Recipe Library

2020-03-11T19:46:47Z

Nathslee:

You can browse the available recipes below, by lab area. You can also browse directly within the KNI's Box directory. Note that the vast majority of recipes are being made publicly available; only a select few are password-protected for members of the Caltech community:
# [https://caltech.app.box.com/folder/89929833301 All Content (requires login with a caltech.edu email address)]
# [https://caltech.box.com/s/uqtkc7xev3xvda2ueykt7cj1886ok1mg Publicly available content (no login required)]

== Lithography Process Recipes ==
===== Electron Beam Lithography =====
* [https://caltech.box.com/s/0xofm2zqmhzm6tv85ihfnhdhzuo8jpjg KNI Introduction to BEAMER]
* [https://youtu.be/AV-SeYZktu4 How to Spin Photoresist onto Wafers and Pieces (Video)]
* [https://caltech.app.box.com/file/549582924881 ZEP 520A Resist: Procedure for spinning, writing & development (Caltech-only access)]
* [https://caltech.box.com/s/lijnz00qwpk7z5qbz8kn9tjo0kqfgz4a HSQ Resist: Procedure for spinning, writing & development (Caltech-only access)]
* [https://caltech.box.com/s/vg9rpa4ac9e1eki79hfecccpohl3qp6u Performing Aligned EBL Patterning Steps with NPGS on an SEM] | [https://caltech.box.com/s/tl4bliegxptu5tfmzu0p7vs1hcnxtyj8 Alignment Template Files]
* [https://caltech.box.com/s/nwuxjbfm0fp0lb4k12albsr3zbnqk9po Bi-Layer PMMA Resist Spinning Recipe]

===== Helium Ion Beam Lithography =====
* [https://caltech.box.com/s/3s0k77mgx26ytfnafttpoalcknmk7npu Helium Ion Beam Lithography (HIBL) – Parameter Guide]

===== Neon Ion Beam Lithography =====
* [https://caltech.box.com/s/y8k2a4xnan8x2jte2ss587gh2o2pfs4h Ne-FIB Hard Mask Lithography on ALD Films – Parameter Guide]

===== Optical Lithography =====
* [https://caltech.box.com/s/5ls5rk4oanod66pfilsuendthutcmfqu AZ5214 Photoresist spinning procedure]
* [https://caltech.box.com/s/xqwbmcj7l4itj6nqp6lbo7h4vexee0tr AZ9260 Photoresist spinning procedure]
* [https://caltech.box.com/s/6et86m5wlrjf80ew9yo0v8rgjifsdzfs AZ nLof 2000 Photoresist Recipe]
* [https://caltech.box.com/s/3pa2im5jj1e86rdozwigt8yfnb8fi5k3 S1813 Photoresist spinning procedure]

== Deposition Process Recipes ==
===== Sputtering =====
* [https://caltech.box.com/s/z043k1ne91oowp70lzt69kau0u2nq79f SnO2 sputtering recipe]
* [https://caltech.box.com/s/oxxv5sy3j7wbqyjc8r9x2wqheabne2lg NbOx sputtering recipe]
* [https://caltech.box.com/s/95qrpvvggcaztmpc7whd9v9o4d9rih5x TiO2 sputtering recipe]
* [https://caltech.box.com/s/k669kh04xglamkidhuo7xq04xan146xt AlN sputtering recipe]
* [https://caltech.box.com/s/7cqdk2g5ic2wa35lu4y2fu03esfk7sdy Al2O3 sputtering recipe]
* [https://caltech.box.com/s/a49yh35hkb2x5qnskivzde0y8z0o4cpn Guide to maintaining a plasma using gradual pressure changes]

===== Chemical Vapor Deposition (CVD) =====
* [https://caltech.box.com/s/qnxzioeoudzbnow9aopguf9xkysxsey3 PECVD amorphous Si recipe]
* [https://caltech.box.com/s/gy10uau7tikhvhakgpjvlzalb7boavbv PECVD SiO2 (350 C) recipe]

== Etching Process Recipes ==
===== Dry Etching =====
* [https://caltech.box.com/s/8zfqalb9u11l31mj3iwydofa8qecyp47 Aluminum Etch via Chlorine/Methane/Hydrogen]
* [https://caltech.box.com/s/3b9zbdj1uoazz7zbz8png25c2ba65vas Comparison of etch rates using different sample-fixing oils]
* [https://caltech.box.com/s/vbjlzmbprhw1sg3auoz1oso5clwrme87 In-situ (dielectric sputter) RF plasma etch of thermal SiO2]
* [https://caltech.box.com/s/40kaaqur8ohyg55uq2pv3jqrzlgi98ts Comparison of Pseudo-Bosch ICP-RIE Etch of SiO2-SiNx]

===== Wet Etching =====
* [https://caltech.box.com/s/ob0wosa8tp79xo3wa3taxbjy24kya6qs HF etching of SiO2 deposited via wet thermal oxidation]
* [https://caltech.box.com/s/fjww9pngq4fwzbd26iz5rci4cyc5jv0b HF etching of SiO2 deposited via PECVD]

== Microscopy Process Recipes ==
===== Focused Ion Beam (FIB) Systems =====
* [https://caltech.box.com/s/1nmp75l3166vj9t1vwwpwu2zyfc4j6ol Cutting & Imaging Cross-sections with SEM/Ga-FIB]
* [https://caltech.box.com/s/3l3w507dxwosuya3nbxgk30tdqyp4qy9 Preparing TEM Lamella Samples with SEM/Ga-FIB]
** [https://caltech.box.com/s/lhaweqbefmep8n79u4nvynsv0cjctuc1 Process Recipe for TEM Lamella prep for Thin Films on Si Substrates]
* [https://caltech.box.com/s/3s0k77mgx26ytfnafttpoalcknmk7npu Helium Ion Beam Lithography (HIBL) – Parameter Guide]
* [https://caltech.box.com/s/y8k2a4xnan8x2jte2ss587gh2o2pfs4h Ne-FIB Hard Mask Lithography on ALD Films – Parameter Guide]
* [https://caltech.box.com/s/ybdwd4zi39p62bx13rc7f8o54444vuyz Helium Ion Beam Imaging with the Electron Flood Gun – Parameter Guide]
* [https://caltech.box.com/s/qobquoi3hs0izeyhdg5d8px9wmmdzuxw Source Rebuild Guide for ORION NanoFab He- & Ne-FIB]

===== Scanning Electron Microscopes (SEMs) =====
* [https://caltech.box.com/s/e5cdnag69i2w9nm1d0p07fyun4k15b5c Environmental SEM (ESEM) Imaging Guide (for biological and highly non-conductive specimens)]
* [https://caltech.box.com/s/vg9rpa4ac9e1eki79hfecccpohl3qp6u Performing Aligned EBL Patterning Steps with NPGS on an SEM] | [https://caltech.box.com/s/tl4bliegxptu5tfmzu0p7vs1hcnxtyj8 Alignment Template Files]

===== Transmission Electron Microscopes (TEMs) =====
* [https://caltech.box.com/s/fwhkep9qf3bhdygshvfi4dycy2qpmi0i STEM mode EDS on TF-20 TEM (emphasis on high-resolution 2D mapping)]
* [https://caltech.box.com/s/lstv8e5zy94fnt3o0y7urfw41mpesd38 Procedure to Evaluate Selected Area Electron Diffraction (SAED) Patterns]
**[https://caltech.box.com/s/59upcnvhlqulnazm51b0dihd942xebn3 All Resources for SAED Evaluation, including DPs captured of standard samples]

===== Thermal Processing =====
* [https://caltech.box.com/s/nqiiqwlhip4dcult2mtuvvdlxw0gv086 Wet Oxidation at 1000C on Tystar Tube Furnaces]

== Multi-Technique Fabrication Processes ==
* [https://caltech.box.com/s/ohm3fp2h3203yxi6j8peo8bf4v1mz0yt Si-W notched nanopillar fabrication]

Tube Furnaces for Wet & Dry Processing

2020-03-11T19:40:52Z

Nathslee: /* Resources */

{{InstrumentInfoboxOneImage|
|InstrumentName = Tystar Tytan Tube Furnaces 1 & 2
|HeaderColor = #E6E7E8
|ImageOne = Tystar-Tytan-Tube-Furnaces.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Support_Tools|Support Tools]], [[Equipment_List#Thermal_Processing|Thermal Processing]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Nathan S. Lee]]
|StaffEmail = nathslee@caltech.edu
|StaffPhone = 626-395-1319
|Manufacturer = Tystar Corporation
|Model = Tytan Horizontal Diffusion Furnace
|Techniques = Oxidation, Annealing
|EmailList = kni-tystar
|EmailListName = Tystar
}}
== Description ==
The system is designed for processing up to one-hundred, 150 mm (6") wafers per tube. Tube 1 is designated for wet & dry oxidation using a flask evaporator. Tube 2 is designated for dry oxidation and annealing.
===== Applications =====
* Dry & Wet oxidation
* Annealing
== Resources ==
===== Tystar Oxidation Recipe =====
* [https://caltech.box.com/s/nqiiqwlhip4dcult2mtuvvdlxw0gv086 Wet Oxidation 1000C ]
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/yrvj5tar3r2e2ldq9orm2bh5mlkavw05 KNI SOP ]

Process Recipe Library

2020-02-06T22:22:17Z

Nathslee: /* Chemical Vapor Deposition (CVD) */

You can browse the available recipes below, by lab area. You can also browse directly within the KNI's Box directory. Note that the vast majority of recipes are being made publicly available; only a select few are password-protected for members of the Caltech community:
# [https://caltech.app.box.com/folder/89929833301 All Content (requires login with a caltech.edu email address)]
# [https://caltech.box.com/s/uqtkc7xev3xvda2ueykt7cj1886ok1mg Publicly available content (no login required)]

== Lithography Process Recipes ==
===== Electron Beam Lithography =====
* [https://caltech.app.box.com/file/549582924881 ZEP 520A Resist: Procedure for spinning, writing & development (Caltech-only access)]
* [https://caltech.box.com/s/lijnz00qwpk7z5qbz8kn9tjo0kqfgz4a HSQ Resist: Procedure for spinning, writing & development (Caltech-only access)]
* [https://caltech.box.com/s/vg9rpa4ac9e1eki79hfecccpohl3qp6u Performing Aligned EBL Patterning Steps with NPGS on an SEM] | [https://caltech.box.com/s/tl4bliegxptu5tfmzu0p7vs1hcnxtyj8 Alignment Template Files]

===== Helium Ion Beam Lithography =====
* [https://caltech.box.com/s/3s0k77mgx26ytfnafttpoalcknmk7npu Helium Ion Beam Lithography (HIBL) – Parameter Recipe]

===== Optical Lithography =====
* [https://caltech.box.com/s/5ls5rk4oanod66pfilsuendthutcmfqu AZ5214 Photoresist spinning procedure]
* [https://caltech.box.com/s/3pa2im5jj1e86rdozwigt8yfnb8fi5k3 S1813 Photoresist spinning procedure]

== Deposition Process Recipes ==
===== Sputtering =====
* [https://caltech.box.com/s/z043k1ne91oowp70lzt69kau0u2nq79f SnO2 sputtering recipe]
* [https://caltech.box.com/s/oxxv5sy3j7wbqyjc8r9x2wqheabne2lg NbOx sputtering recipe]
* [https://caltech.box.com/s/95qrpvvggcaztmpc7whd9v9o4d9rih5x TiO2 sputtering recipe]
* [https://caltech.box.com/s/k669kh04xglamkidhuo7xq04xan146xt AlN sputtering recipe]
* [https://caltech.box.com/s/7cqdk2g5ic2wa35lu4y2fu03esfk7sdy Al2O3 sputtering recipe]
* [https://caltech.box.com/s/a49yh35hkb2x5qnskivzde0y8z0o4cpn Guide to maintaining a plasma using gradual pressure changes]

===== Chemical Vapor Deposition (CVD) =====
* [https://caltech.box.com/s/qnxzioeoudzbnow9aopguf9xkysxsey3 PECVD amorphous Si recipe]
* [https://caltech.box.com/s/gy10uau7tikhvhakgpjvlzalb7boavbv PECVD 350C SiO2 recipe]

== Etching Process Recipes ==
===== Dry Etching =====
* [https://caltech.box.com/s/3b9zbdj1uoazz7zbz8png25c2ba65vas Comparison of etch rates using different sample-fixing oils]
* [https://caltech.box.com/s/vbjlzmbprhw1sg3auoz1oso5clwrme87 In-situ (dielectric sputter) RF plasma etch of thermal SiO2]

===== Wet Etching =====
* [https://caltech.box.com/s/ob0wosa8tp79xo3wa3taxbjy24kya6qs HF etching of SiO2 deposited via wet thermal oxidation]
* [https://caltech.box.com/s/fjww9pngq4fwzbd26iz5rci4cyc5jv0b HF etching of SiO2 deposited via PECVD]

== Microscopy Process Recipes ==
===== Focused Ion Beam (FIB) Systems =====
* [https://caltech.box.com/s/1nmp75l3166vj9t1vwwpwu2zyfc4j6ol Cutting & Imaging Cross-sections with SEM/Ga-FIB]
* [https://caltech.box.com/s/3l3w507dxwosuya3nbxgk30tdqyp4qy9 Preparing TEM Lamella Samples with SEM/Ga-FIB]
* [https://caltech.box.com/s/3s0k77mgx26ytfnafttpoalcknmk7npu Helium Ion Beam Lithography (HIBL) – Parameter Guide]
* [https://caltech.box.com/s/ybdwd4zi39p62bx13rc7f8o54444vuyz Helium Ion Beam Imaging with the Electron Flood Gun – Parameter Guide]
* [https://caltech.box.com/s/qobquoi3hs0izeyhdg5d8px9wmmdzuxw Source Rebuild Guide for ORION NanoFab He- & Ne-FIB]

===== Scanning Electron Microscopes (SEMs) =====
* [https://caltech.box.com/s/e5cdnag69i2w9nm1d0p07fyun4k15b5c Environmental SEM (ESEM) Imaging Guide (for biological and highly non-conductive specimens)]
* [https://caltech.box.com/s/vg9rpa4ac9e1eki79hfecccpohl3qp6u Performing Aligned EBL Patterning Steps with NPGS on an SEM] | [https://caltech.box.com/s/tl4bliegxptu5tfmzu0p7vs1hcnxtyj8 Alignment Template Files]

===== Transmission Electron Microscopes (TEMs) =====
* [https://caltech.box.com/s/fwhkep9qf3bhdygshvfi4dycy2qpmi0i STEM mode EDS on TF-20 TEM (emphasis on high-resolution 2D mapping)]

== Multi-Technique Fabrication Processes ==
* [https://caltech.box.com/s/ohm3fp2h3203yxi6j8peo8bf4v1mz0yt Si-W notched nanopillar fabrication]

Silicon Deposition: Oxford Instruments Plasmalab System 100 PECVD

2020-02-06T21:38:51Z

Nathslee: /* Process Documents */

{{InstrumentInfoboxOneImage|
|InstrumentName = PECVD
|HeaderColor = #F2682A
|ImageOne = PECVD_Oxford-System-100.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Deposition|Deposition]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Nathan S. Lee]]
|StaffEmail = nathslee@caltech.edu
|StaffPhone = 626-395-1319
|Manufacturer = Oxford Instruments
|Model = Plasmalab System 100
|Techniques = Amorphous Silicon Deposition, Silicon Dioxide Deposition, Silicon Nitride Deposition
|EmailList = kni-oxfordpecvd
|EmailListName = Oxford PECVD
}}
== Description ==
The Plasma-Enhanced Chemical Vapor Deposition (PECVD) system is an Oxford Instruments Plasma Technology Plasmalab System 100 platform that is optimized for amorphous silicon, silicon dioxide, and silicon nitride deposition. The PECVD has a variable temperature stage (RT to 600 °C). This system supports wafer sizes up to 6 inches, and provides PECVD film growth over a wide range of process conditions.
===== Applications =====
* Amorphous Silicon Deposition
* Silicon Dioxide Deposition
* Silicon Nitride Deposition
===== Allowed material in PECVD System =====
* Si, SixNy, SiO2, SOI
* Hard masks compatible with process temperature
===== PECVD Gas List =====
* SiH4 (5% in N2 and Ar)
* NH3
* N2O
* N2
* 80%CF4/O2

== Resources ==
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/c8qx3ikzjb05x44o4updpqs36ra39ytw KNI SOP]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]
===== Process Documents =====
* [https://caltech.box.com/s/qnxzioeoudzbnow9aopguf9xkysxsey3 KNI's Amorphous Silicon recipe]
* [https://caltech.box.com/s/gy10uau7tikhvhakgpjvlzalb7boavbv KNI's 350C SiO2 recipe]
* [https://caltech.box.com/s/0e14n82o7o9yziqmlygkakfcv1lp65iu Process Standards]
* [https://caltech.box.com/s/6b2ivuuguflqjaqby5werlcslmmudryf High rate SiOx]
* [https://caltech.box.com/s/vi6vb1nz8thm3sflt5ncoyhi62tomi82 High rate SiNx]
* [https://caltech.box.com/s/tc4j0yr2jazv0rd6ey22ri8jd1asl326 Low Rate SiOx]
* [https://caltech.box.com/s/r3socf5rslp7qs9rb5o7vvpyp12qf0ps Low rate SiNx]
* [https://caltech.box.com/s/6acyh95hslt0q711makbllgqjrexpew1 Amorphous Silicon Deposition (Silane/helium)]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/116/System%20Manual%20for%20Caltech%2094-219848.pdf Oxford PECVD System Manual]
* [https://caltech.box.com/s/zqfonyv64m2m76mo8b4xn63ljz9ee4i5 Alcatel ADS 602P dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/kvgp7d7zx9gczapf7iun791m234vevod Manufacturer Data Sheet]
===== System Features =====
* Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* PECVD process chamber with 160 mm pumping port, view port, and an additional rear port for optical emission end-point-detection
* Heated upper electrode to prevent condensation of low vapor pressure precursors
* PECVD 205 mm electrically heated (700 °C) lower electrode with central wafer lift mechanism
* Parameter ramping software
* 5 Torr capacitance manometer for process control, and penning for base pressure measurement
* Process chamber pumping with 63 mm branch to APC, and isolation valve; chamber base pressure turbo, backed by a refurbished dry pump with roots
* Twelve line gas pod with two non-toxic and treeh toxic digital mass-flow-controlled gas lines and cleaning gas
* Chamber Gas ring, with split gas manifold
* Liquid vapor delivery system
* Single-wafer automatic insertion load lock with soft pump option
===== System Specifications =====
* Chamber wall heating 80 °C
* 30/300 W RF generator close-coupled to the upper electrode through an automatic matching unit; the generator is configured to operate in a low-power mode (0-30 W) for higher accuracy during low-rate deposition processes
* 600 W solid-state 50-460 kHz LF generator

== Related Instrumentation in the KNI ==
===== Sputtering Systems =====
* [[ATC Orion 8: Dielectric Sputter System|ATC Orion 8: Dielectric Sputter System]]
* [[ATC Orion 8: Chalcogenide Sputter System|ATC Orion 8: Chalcogenide Sputter System]]

===== Electron Beam Evaporation Systems =====
* [[Labline: Electron Beam Evaporator|Labline: Electron Beam Evaporator]]
* [[CHA: Electron Beam Evaporator|CHA: Electron Beam Evaporator]]

===== Chemical Vapor Deposition =====
* [[FlexAL II: Atomic Layer Deposition (ALD)|FlexAL II: Atomic Layer Deposition (ALD)]]
* [[Plasma-Enhanced Chemical Vapor Deposition (PECVD)|Plasma-Enhanced Chemical Vapor Deposition (PECVD)]]

Silicon Deposition: Oxford Instruments Plasmalab System 100 PECVD

2020-02-06T21:37:02Z

Nathslee: /* Process Documents */

{{InstrumentInfoboxOneImage|
|InstrumentName = PECVD
|HeaderColor = #F2682A
|ImageOne = PECVD_Oxford-System-100.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Deposition|Deposition]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Nathan S. Lee]]
|StaffEmail = nathslee@caltech.edu
|StaffPhone = 626-395-1319
|Manufacturer = Oxford Instruments
|Model = Plasmalab System 100
|Techniques = Amorphous Silicon Deposition, Silicon Dioxide Deposition, Silicon Nitride Deposition
|EmailList = kni-oxfordpecvd
|EmailListName = Oxford PECVD
}}
== Description ==
The Plasma-Enhanced Chemical Vapor Deposition (PECVD) system is an Oxford Instruments Plasma Technology Plasmalab System 100 platform that is optimized for amorphous silicon, silicon dioxide, and silicon nitride deposition. The PECVD has a variable temperature stage (RT to 600 °C). This system supports wafer sizes up to 6 inches, and provides PECVD film growth over a wide range of process conditions.
===== Applications =====
* Amorphous Silicon Deposition
* Silicon Dioxide Deposition
* Silicon Nitride Deposition
===== Allowed material in PECVD System =====
* Si, SixNy, SiO2, SOI
* Hard masks compatible with process temperature
===== PECVD Gas List =====
* SiH4 (5% in N2 and Ar)
* NH3
* N2O
* N2
* 80%CF4/O2

== Resources ==
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/c8qx3ikzjb05x44o4updpqs36ra39ytw KNI SOP]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]
===== Process Documents =====
* [https://caltech.box.com/s/0e14n82o7o9yziqmlygkakfcv1lp65iu Process Standards]
* [https://caltech.box.com/s/6b2ivuuguflqjaqby5werlcslmmudryf High rate SiOx]
* [https://caltech.box.com/s/vi6vb1nz8thm3sflt5ncoyhi62tomi82 High rate SiNx]
* [https://caltech.box.com/s/tc4j0yr2jazv0rd6ey22ri8jd1asl326 Low Rate SiOx]
* [https://caltech.box.com/s/r3socf5rslp7qs9rb5o7vvpyp12qf0ps Low rate SiNx]
* [https://caltech.box.com/s/qnxzioeoudzbnow9aopguf9xkysxsey3 KNI's Amorphous Silicon recipe]
* [https://caltech.box.com/s/gy10uau7tikhvhakgpjvlzalb7boavbv KNI's 350C SiO2 recipe]
* [https://caltech.box.com/s/6acyh95hslt0q711makbllgqjrexpew1 Amorphous Silicon Deposition (Silane/helium)]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/116/System%20Manual%20for%20Caltech%2094-219848.pdf Oxford PECVD System Manual]
* [https://caltech.box.com/s/zqfonyv64m2m76mo8b4xn63ljz9ee4i5 Alcatel ADS 602P dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/kvgp7d7zx9gczapf7iun791m234vevod Manufacturer Data Sheet]
===== System Features =====
* Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* PECVD process chamber with 160 mm pumping port, view port, and an additional rear port for optical emission end-point-detection
* Heated upper electrode to prevent condensation of low vapor pressure precursors
* PECVD 205 mm electrically heated (700 °C) lower electrode with central wafer lift mechanism
* Parameter ramping software
* 5 Torr capacitance manometer for process control, and penning for base pressure measurement
* Process chamber pumping with 63 mm branch to APC, and isolation valve; chamber base pressure turbo, backed by a refurbished dry pump with roots
* Twelve line gas pod with two non-toxic and treeh toxic digital mass-flow-controlled gas lines and cleaning gas
* Chamber Gas ring, with split gas manifold
* Liquid vapor delivery system
* Single-wafer automatic insertion load lock with soft pump option
===== System Specifications =====
* Chamber wall heating 80 °C
* 30/300 W RF generator close-coupled to the upper electrode through an automatic matching unit; the generator is configured to operate in a low-power mode (0-30 W) for higher accuracy during low-rate deposition processes
* 600 W solid-state 50-460 kHz LF generator

== Related Instrumentation in the KNI ==
===== Sputtering Systems =====
* [[ATC Orion 8: Dielectric Sputter System|ATC Orion 8: Dielectric Sputter System]]
* [[ATC Orion 8: Chalcogenide Sputter System|ATC Orion 8: Chalcogenide Sputter System]]

===== Electron Beam Evaporation Systems =====
* [[Labline: Electron Beam Evaporator|Labline: Electron Beam Evaporator]]
* [[CHA: Electron Beam Evaporator|CHA: Electron Beam Evaporator]]

===== Chemical Vapor Deposition =====
* [[FlexAL II: Atomic Layer Deposition (ALD)|FlexAL II: Atomic Layer Deposition (ALD)]]
* [[Plasma-Enhanced Chemical Vapor Deposition (PECVD)|Plasma-Enhanced Chemical Vapor Deposition (PECVD)]]

ICP-RIE: Dielectric Etcher

2019-05-29T19:42:29Z

Nathslee: /* Dielectric Etcher Gas List */

{{InstrumentInfoboxOneImage|
|InstrumentName = Dielectric Etcher
|HeaderColor = #FFE2B9
|ImageOne = ICP-RIE_Dielectric-Material-Etcher_.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Etching|Etching]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Nathan S. Lee]]
|StaffEmail = nathslee@caltech.edu
|StaffPhone = 626-395-1319
|Manufacturer = Oxford Instruments
|Techniques = Dielectric Material Etching
|EmailList = kni-oxfordicp
|EmailListName = Oxford ICP
|Model = Plasmalab System 100
}}
== Description ==
The Dielectric inductively-coupled plasma reactive-ion etcher (ICP-RIE) is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for silicon etching. This system is configured for silicon etching with "pseudoBosch" C4F8 and SF6 gases, and cryogenic silicon etch with SF6 and O2. The silicon ICP-RIE has a variable temperature stage (-150 to 400 °C). This system supports wafer sizes up to 6 inches, and provides accurate deep etching capabilities for silicon and "silicon-like" samples only.
===== Applications =====
* Cryogenic etch of silicon
* pseudo-Bosch of silicon
===== Allowed material in Dielectric Etch System =====
* Si, SixNy, Ge
* PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3 hard masks
* No metals

===== Dielectric Etcher Gas List =====
* SF6
* C4F8
* O2
* Ar
* N2
* N2O
* NH3

== Resources ==
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/0qe85zye5mjlgqxorxa77tzgqgblv3ep General Use SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]

===== Process Documents =====
* [https://caltech.box.com/s/k8gj2bcluhy50in9m2hwz379hnkn9bdw Process Standards]
* [https://caltech.box.com/s/z3ibiol0xp1qwi6cyvnghbxs81p8j5q5 Silicon Waveguide Etch]
* [https://caltech.box.com/s/k8gj2bcluhy50in9m2hwz379hnkn9bdw Silicon Nitride etch]
* [https://caltech.box.com/s/daa9zeonjqphc8v963mi3lojo8me0u9j Cryo-Si Etch]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]

===== Review Articles =====
* [https://caltech.box.com/s/3fnc4a7qeyr1up6kth599j7ojybka2vb Guidelines for Etching Silicon MEMS Structures]
* [https://caltech.box.com/s/j61w7vr4f8cdjr64jrnz1t37oizdhl7f Etch rates for MEMS Processing - Part I]
* [https://caltech.box.com/s/ls0jl268j4at6z39g6kv8wivevpq80eh Etch Rates for MEMS Processing - Part II]
* [https://caltech.box.com/s/cetpre7d66gssbhtaicnhtovyo6ngzjv Dry Etching of Electronic Oxides, Polymers, and Semiconductors]
* [https://caltech.box.com/s/pauf384duhejuwzfwan71eam7nkvdrxw Alumina etch masks for fabrication of high-aspect-ratio silicon micropillars and nanopillars]
* [https://caltech.box.com/s/q42u5q46nmx2hm53szub556kwcrc0oih David Henry's thesis on dry etching in the KNI's tools]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/124/System%20Manual%20for%20Caltech%2094-219846_a.pdf Oxford Plasmalab System 100 Dielectric Etcher Manual] (login to LabRunr required)
* [https://caltech.box.com/s/juzfel0sy2fv6y3d1zcul8lc3z6ipha4 Edwards Pyrophoric Conditioning System Manual]
* [https://caltech.box.com/s/gclvux5tu28rpssvwncx5sm518uhmebl Edwards QDP 80 dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/85mj9roas98jtwee9d22hk0wk9un54fl Manufacturer System Configuration]
===== System Features =====
* Universal base console which houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
* Variable height 240 mm Cryo RIE electrode
* Parameter ramping software (Not Bosch)
* 100-mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
* 200 mm pumping port is fitted with a 200mm variable gate valve for chamber isolation and process pressure control
* Twelve line gas pod with 7 non-toxic and 3 toxic digital mass-flow-controlled gas lines
* Chamber Gas ring, with split gas manifold
* Alcatel 1300 l/s MAGLEV turbo pump
* Single-wafer automatic insertion load lock with soft pump option
===== System Specifications =====
* Chamber wall heating 80 °C
* Cryo table range -140 to 400 °C
* ICP 380 mm remote high-density plasma source with 5 kW RF generator and automatic matching unit close-coupled to the source.
* Substrate bias control by 30 / 300 W RIE source
* Helium back-side wafer cooling

ICP-RIE: Dielectric Etcher

2019-05-29T19:41:41Z

Nathslee: /* SOPs & Troubleshooting */

{{InstrumentInfoboxOneImage|
|InstrumentName = Dielectric Etcher
|HeaderColor = #FFE2B9
|ImageOne = ICP-RIE_Dielectric-Material-Etcher_.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Etching|Etching]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Nathan S. Lee]]
|StaffEmail = nathslee@caltech.edu
|StaffPhone = 626-395-1319
|Manufacturer = Oxford Instruments
|Techniques = Dielectric Material Etching
|EmailList = kni-oxfordicp
|EmailListName = Oxford ICP
|Model = Plasmalab System 100
}}
== Description ==
The Dielectric inductively-coupled plasma reactive-ion etcher (ICP-RIE) is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for silicon etching. This system is configured for silicon etching with "pseudoBosch" C4F8 and SF6 gases, and cryogenic silicon etch with SF6 and O2. The silicon ICP-RIE has a variable temperature stage (-150 to 400 °C). This system supports wafer sizes up to 6 inches, and provides accurate deep etching capabilities for silicon and "silicon-like" samples only.
===== Applications =====
* Cryogenic etch of silicon
* pseudo-Bosch of silicon
===== Allowed material in Dielectric Etch System =====
* Si, SixNy, Ge
* PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3 hard masks
* No metals

===== Dielectric Etcher Gas List =====
* SF6
* C4F8
* O2
* Ar
* N2
* CHF3
* N2O
* NH3

== Resources ==
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/0qe85zye5mjlgqxorxa77tzgqgblv3ep General Use SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]

===== Process Documents =====
* [https://caltech.box.com/s/k8gj2bcluhy50in9m2hwz379hnkn9bdw Process Standards]
* [https://caltech.box.com/s/z3ibiol0xp1qwi6cyvnghbxs81p8j5q5 Silicon Waveguide Etch]
* [https://caltech.box.com/s/k8gj2bcluhy50in9m2hwz379hnkn9bdw Silicon Nitride etch]
* [https://caltech.box.com/s/daa9zeonjqphc8v963mi3lojo8me0u9j Cryo-Si Etch]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]

===== Review Articles =====
* [https://caltech.box.com/s/3fnc4a7qeyr1up6kth599j7ojybka2vb Guidelines for Etching Silicon MEMS Structures]
* [https://caltech.box.com/s/j61w7vr4f8cdjr64jrnz1t37oizdhl7f Etch rates for MEMS Processing - Part I]
* [https://caltech.box.com/s/ls0jl268j4at6z39g6kv8wivevpq80eh Etch Rates for MEMS Processing - Part II]
* [https://caltech.box.com/s/cetpre7d66gssbhtaicnhtovyo6ngzjv Dry Etching of Electronic Oxides, Polymers, and Semiconductors]
* [https://caltech.box.com/s/pauf384duhejuwzfwan71eam7nkvdrxw Alumina etch masks for fabrication of high-aspect-ratio silicon micropillars and nanopillars]
* [https://caltech.box.com/s/q42u5q46nmx2hm53szub556kwcrc0oih David Henry's thesis on dry etching in the KNI's tools]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/124/System%20Manual%20for%20Caltech%2094-219846_a.pdf Oxford Plasmalab System 100 Dielectric Etcher Manual] (login to LabRunr required)
* [https://caltech.box.com/s/juzfel0sy2fv6y3d1zcul8lc3z6ipha4 Edwards Pyrophoric Conditioning System Manual]
* [https://caltech.box.com/s/gclvux5tu28rpssvwncx5sm518uhmebl Edwards QDP 80 dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/85mj9roas98jtwee9d22hk0wk9un54fl Manufacturer System Configuration]
===== System Features =====
* Universal base console which houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
* Variable height 240 mm Cryo RIE electrode
* Parameter ramping software (Not Bosch)
* 100-mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
* 200 mm pumping port is fitted with a 200mm variable gate valve for chamber isolation and process pressure control
* Twelve line gas pod with 7 non-toxic and 3 toxic digital mass-flow-controlled gas lines
* Chamber Gas ring, with split gas manifold
* Alcatel 1300 l/s MAGLEV turbo pump
* Single-wafer automatic insertion load lock with soft pump option
===== System Specifications =====
* Chamber wall heating 80 °C
* Cryo table range -140 to 400 °C
* ICP 380 mm remote high-density plasma source with 5 kW RF generator and automatic matching unit close-coupled to the source.
* Substrate bias control by 30 / 300 W RIE source
* Helium back-side wafer cooling

ICP-RIE: III-V, Metal & Silicon Etcher

2019-05-29T19:41:08Z

Nathslee: /* SOPs & Troubleshooting */

{{InstrumentInfoboxOneImage|
|InstrumentName = III-V, Metal & Si Etcher
|HeaderColor = #FFE2B9
|ImageOne = ICP-RIE_III-V,Metal,Si-Etcher.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Etching|Etching]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Nathan S. Lee]]
|StaffEmail = nathslee@caltech.edu
|StaffPhone = 626-395-1319
|Manufacturer = Oxford Instruments
|Techniques = pseudo-Bosch & Cryogenic Si Etch Compound Semiconductor Etching
|EmailList = kni-oxfordicp
|EmailListName = Oxford ICP
|Model = Plasmalab System 100
}}
== Description ==
The III-V, Metal & Silicon inductively-coupled plasma reactive-ion etcher (ICP-RIE) is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for the etching of compound semiconductors, metals, and silicon. In addition to a wide range of gases for etching a variety of III-V materials and metals, this system is configured for highly-selective ICP-RIE of silicon via the pseudo-Bosch process, allowing silicon etching with SF6 and C4F8 gases as well as cryogenic silicon etching with SF6 and O2 over a temperature range of -140 to 300 °C. This system supports wafer sizes up to 6 inches.
===== Applications =====
* InP grating etch
* GaAs photonics device etch
* pseudo-Bosch of silicon
* Metals etch
* Cryogenic etch of silicon (available upon request)
===== Allowed Material in Etcher =====
* Si, SixNy, SiO2, Ge, InP, GaAs, Al, Mo, Nb, W, Ti
* PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3, Cr hard masks
* Metal in etch stack
===== Etching Gas List =====
* SF6
* C4F8
* O2
* Ar
* Cl2
* SiCl4
* CH4
* H2
* HBr

== Resources ==
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/0qe85zye5mjlgqxorxa77tzgqgblv3ep General Use SOP]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]

===== Process Documents =====
* [https://caltech.box.com/s/nondj2ore8rg61tpur6hj4a3hvj8j9s5 Process Standards]
* [https://caltech.box.com/s/wybxe3urco5s6bqw5getfu7p0amxq7wx AlGaN/GaN Etch with Photoresist Mask]
* [https://caltech.box.com/s/q3sq9cwkp5dicigkj6gkvohuqtf5ivwx InP Etch]
* [https://caltech.box.com/s/4e22q4i3e5cpgjyrykf7r4bm0m0pob59 InP/ InGaAsP Laser Facet ICP Etching]
* [https://caltech.box.com/s/borba8iuvxi9qj2pe8g0vj5vo7xpta0d GaAs Via Hole Etch]
* [https://caltech.box.com/s/x0mm9bsvwc17ev3vx5ks759mwa36tpxm Selective GaAs Etch]
* [https://caltech.box.com/s/z3ibiol0xp1qwi6cyvnghbxs81p8j5q5 Silicon Waveguide Etch]
* [https://caltech.box.com/s/k8gj2bcluhy50in9m2hwz379hnkn9bdw Silicon Nitride etch]
* [https://caltech.box.com/s/4e6rskkmv1sgu9ipgfnrzeq0cguo1gc0 Hard Mask Oxide Etch]
* [https://caltech.box.com/s/daa9zeonjqphc8v963mi3lojo8me0u9j Cryo-Si Etch]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]

===== Review Articles =====
* [https://caltech.box.com/s/3fnc4a7qeyr1up6kth599j7ojybka2vb Guidelines for Etching Silicon MEMS Structures]
* [https://caltech.box.com/s/j61w7vr4f8cdjr64jrnz1t37oizdhl7f Etch rates for MEMS Processing - Part I]
* [https://caltech.box.com/s/ls0jl268j4at6z39g6kv8wivevpq80eh Etch Rates for MEMS Processing - Part II]
* [https://caltech.box.com/s/cetpre7d66gssbhtaicnhtovyo6ngzjv Dry Etching of Electronic Oxides, Polymers, and Semiconductors]
* [https://caltech.box.com/s/pauf384duhejuwzfwan71eam7nkvdrxw Alumina etch masks for fabrication of high-aspect-ratio silicon micropillars and nanopillars]
* [https://caltech.box.com/s/q42u5q46nmx2hm53szub556kwcrc0oih David Henry's thesis on dry etching in the KNI's tools]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/126/System%20Manual%20for%20Caltech%2094-219845.pdf Oxford III-V Metal Etcher System Manual] (login to LabRunr required)
* [https://caltech.box.com/s/gclvux5tu28rpssvwncx5sm518uhmebl Edwards QDP 80 dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/f8f1fx1ffz4ql71suxsvrw0p20b2inp5 Manufacturer Data Sheet]

===== System Features =====
* Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
* Variable height 240 mm Cryo RIE electrode
* Parameter ramping software (Not Bosch)
* 100-mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
* 200 mm pumping port is fitted with a 200 mm variable gate valve for chamber isolation and process pressure control
* Twelve line gas pod with three non-toxic and six toxic digital mass-flow-controlled gas lines
* Alcatel 1300 l/s MAGLEV turbo pump
* Single-wafer automatic insertion load lock with soft pump option

===== System Specifications =====
* Chamber wall heating 80 °C
* Cryo table range -140 to 400 °C
* ICP 380 mm remote high-density plasma source with 5 kW RF generator and automatic matching unit close-coupled to the source
* Substrate bias control by 30 / 300 W RIE source
* Helium back-side wafer cooling

DRIE: Bosch & Cryo ICP-RIE for Silicon

2019-05-29T19:40:32Z

Nathslee: /* SOPs & Troubleshooting */

{{InstrumentInfobox|
|InstrumentName = DRIE
|HeaderColor = #FFE2B9
|ImageOne = Silicon-Microcones_Paul-A-Kempler.jpg
|ImageTwo = DRIE_Bosch-and-Cryo_ICP–RIE_.jpg
|InstrumentType = [[Equipment_List#Etching|Etching]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Nathan S. Lee]]
|StaffEmail = nathslee@caltech.edu
|StaffPhone = 626-395-1319
|Manufacturer = Oxford Instruments
|Techniques = Bosch & Cryogenic Etch of Silicon
|EmailList = kni-oxfordicp
|EmailListName = Oxford ICP
|Model = Plasmalab System 100
}}
== Description ==
The MEMS / Bosch / Cryo inductively-coupled plasma reactive-ion etch (ICP-RIE) is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for silicon etching. This system is configured for deep reactive-ion etching (DRIE) via the Bosch process, allowing silicon etching with SF6 and C4F8 gases. Close-coupled gas pods are included in this system for fast Bosch switching.
The silicon ICP-RIE has a variable temperature stage (-150 to 300 °C) to permit cryogenic etching of silicon with SF6 and O2 if needed. This system supports wafer sizes up to 6 inches and provides accurate deep etching capabilities for silicon only.
===== Applications =====
* Deep silicon etch using Bosch process
* Cryogenic etch of silicon
* pseudo-Bosch etch of silicon
===== Allowed material in DRIE =====
* Si, SixNy, SiO2, Ge
* PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3 hard masks
* Buried/backside metal ok if never exposed (not an etch stop)
===== DRIE Gas List =====
* SF6
* C4F8
* O2
* Ar
* N2

== Resources ==
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/0qe85zye5mjlgqxorxa77tzgqgblv3ep General Use SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]

===== Process Documents =====
* [https://caltech.box.com/s/3n21r2o30u476ppnxfp657o3zbs9f0on Process Standards]
* [https://caltech.box.com/s/z3ibiol0xp1qwi6cyvnghbxs81p8j5q5 Silicon Waveguide Etch]
* [https://caltech.box.com/s/c622brbs1udx5hqc744jvdd7wtf2mw32 Bosch Si Etch]
* [https://caltech.box.com/s/v92jrijz2iijzzlnyrbzbolov7zvo3w0 High-Rate Bosch Si Etch]
* [https://caltech.box.com/s/daa9zeonjqphc8v963mi3lojo8me0u9j Cryo-Si Etch]
* [https://caltech.box.com/s/ekzldcen8pjhok0qbpdy796xvs3icae4 Isotropic Si Etch]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]

===== Review Articles =====
* [https://caltech.box.com/s/3fnc4a7qeyr1up6kth599j7ojybka2vb Guidelines for Etching Silicon MEMS Structures]
* [https://caltech.box.com/s/j61w7vr4f8cdjr64jrnz1t37oizdhl7f Etch rates for MEMS Processing - Part I]
* [https://caltech.box.com/s/ls0jl268j4at6z39g6kv8wivevpq80eh Etch Rates for MEMS Processing - Part II]
* [https://caltech.box.com/s/cetpre7d66gssbhtaicnhtovyo6ngzjv Dry Etching of Electronic Oxides, Polymers, and Semiconductors]
* [https://caltech.box.com/s/pauf384duhejuwzfwan71eam7nkvdrxw Alumina etch masks for fabrication of high-aspect-ratio silicon micropillars and nanopillars]
* [https://caltech.box.com/s/q42u5q46nmx2hm53szub556kwcrc0oih David Henry's thesis on dry etching in the KNI's tools]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/125/LabRunr%20System%20Manual%20for%20Caltech%2094-219846.pdf Oxford Plasmalab System 100 DRIE Manual] (login to LabRunr required)
* [https://caltech.box.com/s/gclvux5tu28rpssvwncx5sm518uhmebl Edwards QDP 80 dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/85mj9roas98jtwee9d22hk0wk9un54fl Manufacturer System Configuration]
===== System Features =====
* Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
* Variable height 240 mm Cryo RIE electrode
* Parameter ramping software
* 100 mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
* 200 mm pumping port is fitted with a 200 mm variable gate valve for chamber isolation and process pressure control
* Close-coupled gas pod to ICP for two digital non-toxic mass-flow-controlled gas lines (SF6, and C4F8)
* Six line gas pod with three non-toxic digital mass-flow-controlled gas lines
* Alcatel 1300 l/s MAGLEV turbo pump
* Single-wafer automatic insertion load lock with soft pump option
* Single user license for Anisotropic Silicon Etch Process (Bosch)
===== System Specifications =====
* Chamber wall heating: 80 °C
* Cryo table range: -150 to 400 °C
* ICP 380 mm remote high-density plasma source with 8 kW RF generator and automatic matching unit close-coupled to the source
* Substrate bias control by 30 / 300W RIE source
* Helium back-side wafer cooling

Dual Chamber RIE: Silicon, III-V Material & Organics Etcher

2019-05-29T17:17:25Z

Nathslee: /* SOPs & Troubleshooting */

{{InstrumentInfoboxOneImage|
|InstrumentName = Dual Chamber RIE
|HeaderColor = #FFE2B9
|ImageOne = Plasmatherm-Dual-Chamber-RIE.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Etching|Etching]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Nathan S. Lee]]
|StaffEmail = nathslee@caltech.edu
|StaffPhone = 626-395-1319
|Manufacturer = Plasma-Therm
|Model = SLR 720
|Techniques = Silicon and compound semiconductor Reactive Ion Etching
|EmailList = kni-plasmatherm
|EmailListName = Plasmatherm RIE
}}
== Description ==
The Plasma-Therm SLR 720 is a dual-chamber reactive ion etching (RIE) system with a load-lock. It is designated for etching silicon and III-V compound semiconductors with a traditional RIE process.
===== Applications =====
* Silicon Etching
* III-V Material Etching
* Organic Material Etching

===== Allowed Material in RIE =====
* Si, SixNy, SiO2, Ge
* PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3 hard masks
* Buried/backside metal ok if never exposed (not an etch stop)

===== RIE Gas List =====
* SF6
* CHF3
* CF4
* O2
* Ar
* He
* H2

== Resources ==
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/jsskat7yic4p7td31941dxuj97ja6er5 KNI SOP]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]

===== Process Documents =====
* [https://caltech.box.com/s/3n21r2o30u476ppnxfp657o3zbs9f0on Process Standards]

===== Manufacturer Manuals =====
* [https://caltech.box.com/s/tfieodeis71aligdpgp3g13kuceefnh0 Oxford Plasmalab System 100 DRIE Manual]
* [https://caltech.box.com/s/gclvux5tu28rpssvwncx5sm518uhmebl Edwards QDP 80 dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/85mj9roas98jtwee9d22hk0wk9un54fl Manufacturer System Configuration]
===== System Features =====
* Universal base console which houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
* Variable height 240 mm Cryo RIE electrode
* Parameter ramping software
* 100 mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
* 200 mm pumping port is fitted with a 200 mm variable gate valve for chamber isolation and process pressure control
* Close-coupled gas pod to ICP for two digital non-toxic mass-flow-controlled gas lines (SF6, and C4F8)
* Six line gas pod with 3 non-toxic digital mass-flow-controlled gas lines
* Alcatel 1300 l/s MAGLEV turbo pump
* Single-wafer automatic insertion load lock with soft pump option
* Single user license for Anisotropic Silicon Etch Process (Bosch)
===== System Specifications =====
* Chamber wall heating 80 °C
* Cryo table range -150 to 400 °C
* ICP 380mm remote high-density plasma source with 8 kW RF generator and automatic matching unit close-coupled to the source.
* Substrate bias control by 30 / 300 W RIE source
* Helium back-side wafer cooling

Nathan S. Lee

2019-05-29T11:13:13Z

Nathslee: /* Experience & Education */

__NOTOC__
{{StaffMemberInfobox
|StaffName = Nathan S. Lee
|StaffPhoto = Nathan-S-Lee.jpg
|JobTitle = Plasma Process Engineer
|AreasResponsibility = Reactive Ion Etching, Plasma-Enhanced CVD
|CaltechID = nathslee
|Phone = 626-395-1319 (office)
|OfficeLocation = 319 Steele
}}
== About ==
===== Role in the KNI =====
Nathan Lee is the Plasma Process Engineer for The Kavli Nanoscience Institute (KNI) at the California Institute of Technology. He oversees the daily operation of the plasma processing tools in the KNI, maintains good working order, and provides trainings on the tools for the KNI users. 
After working in the semiconductor equipment industry as a hardware and process engineer for 15 years, Nathan joined Caltech in January of 2016 as a plasma process engineer for the KNI. He brings to the KNI breadth of experience in plasma process development and hardware optimization.

===== Education =====
Nathan received his B.S. in Structural Engineering from the University of California, San Diego.

== List of Managed Instruments ==
===== Etching =====
* [[DRIE: Bosch & Cryo ICP-RIE for Silicon | Silicon Etcher: Oxford Instruments DRIE System 100 Bosch & Cryo ICP-RIE]]
* [[ICP-RIE: III-V, Metal & Silicon Etcher | III-V Material, Metal & Silicon Etcher: Oxford Instruments System 100 ICP-RIE]]
* [[ICP-RIE: Dielectric Etcher | Dielectric Material Etcher: Oxford Instruments Dielectric System 100 ICP-RIE]]
* [[Dual Chamber RIE: Silicon, III-V Material & Organics Etcher | Silicon, III-V Material & Organics Etcher: Plasma-Therm Dual Chamber RIE]]

===== Deposition =====
* [[FlexAL II: Atomic Layer Deposition (ALD) | Atomic Layer Deposition (ALD): Oxford Instruments FlexAL II]]
* [[Plasma-Enhanced Chemical Vapor Deposition (PECVD) | Plasma-Enhanced Chemical Vapor Deposition (PECVD): Oxford Instruments System 100]]

===== Support Tools =====
* [[Tube Furnaces for Wet & Dry Processing | Tube Furnaces: Tystar Tytan 1 & 2 (Wet & Dry Oxidation and Annealing)]]

Nathan S. Lee

2019-05-29T11:11:36Z

Nathslee: /* Role in the KNI */

__NOTOC__
{{StaffMemberInfobox
|StaffName = Nathan S. Lee
|StaffPhoto = Nathan-S-Lee.jpg
|JobTitle = Plasma Process Engineer
|AreasResponsibility = Reactive Ion Etching, Plasma-Enhanced CVD
|CaltechID = nathslee
|Phone = 626-395-1319 (office)
|OfficeLocation = 319 Steele
}}
== About ==
===== Role in the KNI =====
Nathan Lee is the Plasma Process Engineer for The Kavli Nanoscience Institute (KNI) at the California Institute of Technology. He oversees the daily operation of the plasma processing tools in the KNI, maintains good working order, and provides trainings on the tools for the KNI users. 
After working in the semiconductor equipment industry as a hardware and process engineer for 15 years, Nathan joined Caltech in January of 2016 as a plasma process engineer for the KNI. He brings to the KNI breadth of experience in plasma process development and hardware optimization.

===== Experience & Education =====
Nathan received his B.S. in Structural Engineering from the University of California, San Diego.

== List of Managed Instruments ==
===== Etching =====
* [[DRIE: Bosch & Cryo ICP-RIE for Silicon | Silicon Etcher: Oxford Instruments DRIE System 100 Bosch & Cryo ICP-RIE]]
* [[ICP-RIE: III-V, Metal & Silicon Etcher | III-V Material, Metal & Silicon Etcher: Oxford Instruments System 100 ICP-RIE]]
* [[ICP-RIE: Dielectric Etcher | Dielectric Material Etcher: Oxford Instruments Dielectric System 100 ICP-RIE]]
* [[Dual Chamber RIE: Silicon, III-V Material & Organics Etcher | Silicon, III-V Material & Organics Etcher: Plasma-Therm Dual Chamber RIE]]

===== Deposition =====
* [[FlexAL II: Atomic Layer Deposition (ALD) | Atomic Layer Deposition (ALD): Oxford Instruments FlexAL II]]
* [[Plasma-Enhanced Chemical Vapor Deposition (PECVD) | Plasma-Enhanced Chemical Vapor Deposition (PECVD): Oxford Instruments System 100]]

===== Support Tools =====
* [[Tube Furnaces for Wet & Dry Processing | Tube Furnaces: Tystar Tytan 1 & 2 (Wet & Dry Oxidation and Annealing)]]

Nathan S. Lee

2019-05-29T10:45:37Z

Nathslee: /* Experience & Education */

__NOTOC__
{{StaffMemberInfobox
|StaffName = Nathan S. Lee
|StaffPhoto = Nathan-S-Lee.jpg
|JobTitle = Plasma Process Engineer
|AreasResponsibility = Reactive Ion Etching, Plasma-Enhanced CVD
|CaltechID = nathslee
|Phone = 626-395-1319 (office)
|OfficeLocation = 319 Steele
}}
== About ==
===== Role in the KNI =====
Nathan oversees the daily operation of the plasma processing tools in the KNI, maintains good working order, and provides trainings on the tools for the KNI users. 
After working in the semiconductor equipment industry as a hardware and process engineer for 15 years, Nathan joined Caltech in January of 2016 as a plasma process engineer for the KNI. He brings to the KNI breadth of experience in plasma process development and hardware optimization.
===== Experience & Education =====
Nathan received his B.S. in Structural Engineering from the University of California, San Diego.

== List of Managed Instruments ==
===== Etching =====
* [[DRIE: Bosch & Cryo ICP-RIE for Silicon | Silicon Etcher: Oxford Instruments DRIE System 100 Bosch & Cryo ICP-RIE]]
* [[ICP-RIE: III-V, Metal & Silicon Etcher | III-V Material, Metal & Silicon Etcher: Oxford Instruments System 100 ICP-RIE]]
* [[ICP-RIE: Dielectric Etcher | Dielectric Material Etcher: Oxford Instruments Dielectric System 100 ICP-RIE]]
* [[Dual Chamber RIE: Silicon, III-V Material & Organics Etcher | Silicon, III-V Material & Organics Etcher: Plasma-Therm Dual Chamber RIE]]

===== Deposition =====
* [[FlexAL II: Atomic Layer Deposition (ALD) | Atomic Layer Deposition (ALD): Oxford Instruments FlexAL II]]
* [[Plasma-Enhanced Chemical Vapor Deposition (PECVD) | Plasma-Enhanced Chemical Vapor Deposition (PECVD): Oxford Instruments System 100]]

===== Support Tools =====
* [[Tube Furnaces for Wet & Dry Processing | Tube Furnaces: Tystar Tytan 1 & 2 (Wet & Dry Oxidation and Annealing)]]

Nathan S. Lee

2019-05-29T10:42:07Z

Nathslee:

__NOTOC__
{{StaffMemberInfobox
|StaffName = Nathan S. Lee
|StaffPhoto = Nathan-S-Lee.jpg
|JobTitle = Plasma Process Engineer
|AreasResponsibility = Reactive Ion Etching, Plasma-Enhanced CVD
|CaltechID = nathslee
|Phone = 626-395-1319 (office)
|OfficeLocation = 319 Steele
}}
== About ==
===== Role in the KNI =====
Nathan oversees the daily operation of the plasma processing tools in the KNI, maintains good working order, and provides trainings on the tools for the KNI users. 
After working in the semiconductor equipment industry as a hardware and process engineer for 15 years, Nathan joined Caltech in January of 2016 as a plasma process engineer for the KNI. He brings to the KNI breadth of experience in plasma process development and hardware optimization.
===== Experience & Education =====
Nathan received his B.S. degree in Structural Engineering from the University of California, San Diego.

== List of Managed Instruments ==
===== Etching =====
* [[DRIE: Bosch & Cryo ICP-RIE for Silicon | Silicon Etcher: Oxford Instruments DRIE System 100 Bosch & Cryo ICP-RIE]]
* [[ICP-RIE: III-V, Metal & Silicon Etcher | III-V Material, Metal & Silicon Etcher: Oxford Instruments System 100 ICP-RIE]]
* [[ICP-RIE: Dielectric Etcher | Dielectric Material Etcher: Oxford Instruments Dielectric System 100 ICP-RIE]]
* [[Dual Chamber RIE: Silicon, III-V Material & Organics Etcher | Silicon, III-V Material & Organics Etcher: Plasma-Therm Dual Chamber RIE]]

===== Deposition =====
* [[FlexAL II: Atomic Layer Deposition (ALD) | Atomic Layer Deposition (ALD): Oxford Instruments FlexAL II]]
* [[Plasma-Enhanced Chemical Vapor Deposition (PECVD) | Plasma-Enhanced Chemical Vapor Deposition (PECVD): Oxford Instruments System 100]]

===== Support Tools =====
* [[Tube Furnaces for Wet & Dry Processing | Tube Furnaces: Tystar Tytan 1 & 2 (Wet & Dry Oxidation and Annealing)]]

KNI Staff Members

2019-05-29T10:19:40Z

Nathslee:

{| class="wikitable" style="width: 90%;"
|-
!scope="col" style="text-align:left; width: 15%"| Name
!scope="col" style="text-align:left; width: 16%" | Job Title
!scope="col" style="text-align:left; width: 18%"| Email
!scope="col" style="text-align:left; width: 14%"| Office & Phone
!scope="col" style="text-align:left; width: 20%"| Areas of Responsibility
!scope="col" style="text-align:center;"| Photo
|-
{{StaffMemberTableItem|
|Name = Guy A. DeRose, PhD
|JobTitle = Associate Director of Technical Operations
|CaltechID = derose
|Office = 126 Steele
|Phone = 626-395-3423 (office) 626-676-8529 (cell)
|AreasResponsibility = Electron Beam Lithography, Lab Technical Operations
|Photo = Guy-A-DeRose.jpg
}}
{{StaffMemberTableItem|
|Name = Tiffany Kimoto
|JobTitle = Associate Director of Business Operations
|CaltechID = tkimoto
|Office = 119A Steele
|Phone = 626-395-3914 (office) 626-744-9908 (fax) 310-291-7977 (cell)
|AreasResponsibility = Programs, Outreach, Communications, Financial Management
|Photo = Tiffany-Kimoto.jpg
}}
{{StaffMemberTableItem|
|Name = Matthew S. Hunt, PhD
|JobTitle = Assistant Director of Staff Research & Lead Microscopist
|CaltechID = matthew.hunt
|Office = 303 Steele
|Phone = 626-395-5994 (office) 203-470-0861 (cell)
|AreasResponsibility = Microscopy, Staff Research Projects
|Photo = Matthew-S-Hunt.jpg
}}
{{StaffMemberTableItem|
|Name = Bert Mendoza
|JobTitle = Laboratory Coordinator
|CaltechID = bertm
|Office = 124 Steele
|Phone = 626-395-4075 (office) 626-491-2970 (cell)
|AreasResponsibility = Lab Safety & Coordination, Wet Chemistry, Photolithography
|Photo = Bert-Mendoza.jpg
}}
{{StaffMemberTableItem|
|Name = Jennifer Palmer
|JobTitle = Administrative Lead
|CaltechID = jpalmer
|Office = 128 Steele
|Phone = 626-395-3244 (office) 626-744-9908 (fax)
|AreasResponsibility = Accounts, Billing, Purchase Orders
|Photo = Jennifer-Palmer.jpg
}}
{{StaffMemberTableItem|
|Name = Nathan S. Lee
|JobTitle = Plasma Process Engineer
|CaltechID = nathslee
|Office = 319 Steele
|Phone = 626-395-1319 (office)
|AreasResponsibility = Reactive Ion Etching, Plasma-Enhanced CVD
|Photo = Nathan-S-Lee.jpg
}}
{{StaffMemberTableItem|
|Name = Alex Wertheim
|JobTitle = Materials Process Engineer
|CaltechID = alexw
|Office = 130 Steele
|Phone = 626-395-3371 (office)
|AreasResponsibility = Physical Deposition, 3D Printing, Ellipsometry
|Photo = Alex-Wertheim.jpg
}}
{{StaffMemberTableItem|
|Name = Barry Baker
|JobTitle = Laboratory Assistant
|CaltechID = bbaker5
|Office = 330 Steele
|Phone = 626-395-5732 (office)
|AreasResponsibility = Lab Infrastructure, Lab Maintenance
|Photo = Barry-Baker.jpg
}}
{{StaffMemberTableItem|
|Name = Patama Taweesup
|JobTitle = Grants Manager
|CaltechID = patama
|Office = 142B Moore
|Phone = 626-395-8542 (office)
|AreasResponsibility = Grant Management
|Photo = Patama-Taweesup.jpg
}}
|}

Nathan S. Lee

2019-05-28T22:36:12Z

Nathslee:

__NOTOC__
{{StaffMemberInfobox
|StaffName = Nathan S. Lee
|StaffPhoto = Nathan-S-Lee.jpg
|JobTitle = Plasma Process Engineer
|AreasResponsibility = Reactive Ion Etching, Plasma-Enhanced CVD
|CaltechID = nathslee
|Phone = 626-395-1319 (office)
|OfficeLocation = 319 Steele
}}
== About ==
===== Role in the KNI =====
Sapien nec sagittis aliquam malesuada bibendum. Vel fringilla est ullamcorper eget nulla facilisi etiam dignissim diam.

===== Education =====
Nunc mi ipsum faucibus vitae. Ipsum nunc aliquet bibendum enim facilisis gravida neque. Sapien nec sagittis aliquam malesuada bibendum. Vel fringilla est ullamcorper eget nulla facilisi etiam dignissim diam.

== List of Managed Instruments ==
===== Etching =====
* [[DRIE: Bosch & Cryo ICP-RIE for Silicon | Silicon Etcher: Oxford Instruments DRIE System 100 Bosch & Cryo ICP-RIE]]
* [[ICP-RIE: III-V, Metal & Silicon Etcher | III-V Material, Metal & Silicon Etcher: Oxford Instruments System 100 ICP-RIE]]
* [[ICP-RIE: Dielectric Etcher | Dielectric Material Etcher: Oxford Instruments Dielectric System 100 ICP-RIE]]
* [[Dual Chamber RIE: Silicon, III-V Material & Organics Etcher | Silicon, III-V Material & Organics Etcher: Plasma-Therm Dual Chamber RIE]]

===== Deposition =====
* [[FlexAL II: Atomic Layer Deposition (ALD) | Atomic Layer Deposition (ALD): Oxford Instruments FlexAL II]]
* [[Plasma-Enhanced Chemical Vapor Deposition (PECVD) | Plasma-Enhanced Chemical Vapor Deposition (PECVD): Oxford Instruments System 100]]

===== Support Tools =====
* [[Tube Furnaces for Wet & Dry Processing | Tube Furnaces: Tystar Tytan 1 & 2 (Wet & Dry Oxidation and Annealing)]]

ICP-RIE: III-V, Metal & Silicon Etcher

2019-05-28T22:21:25Z

Nathslee: /* Description */

{{InstrumentInfoboxOneImage|
|InstrumentName = III-V, Metal & Si Etcher
|HeaderColor = #FFE2B9
|ImageOne = ICP-RIE_III-V,Metal,Si-Etcher.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Etching|Etching]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Nathan S. Lee]]
|StaffEmail = nathslee@caltech.edu
|StaffPhone = 626-395-1319
|Manufacturer = Oxford Instruments
|Techniques = pseudo-Bosch & Cryogenic Si Etch Compound Semiconductor Etching
|EmailList = kni-oxfordicp
|EmailListName = Oxford ICP
|Model = Plasmalab System 100
}}
== Description ==
The III-V, Metal & Silicon inductively-coupled plasma reactive-ion etcher (ICP-RIE) is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for the etching of compound semiconductors, metals, and silicon. In addition to a wide range of gases for etching a variety of III-V materials and metals, this system is configured for highly-selective ICP-RIE of silicon via the pseudo-Bosch process, allowing silicon etching with SF6 and C4F8 gases as well as cryogenic silicon etching with SF6 and O2 over a temperature range of -140 to 300 °C. This system supports wafer sizes up to 6 inches.
===== Applications =====
* InP grating etch
* GaAs photonics device etch
* pseudo-Bosch of silicon
* Metals etch
* Cryogenic etch of silicon (available upon request)
===== Allowed Material in Etcher =====
* Si, SixNy, SiO2, Ge, InP, GaAs, Al, Mo, Nb, W, Ti
* PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3, Cr hard masks
* Metal in etch stack
===== Etching Gas List =====
* SF6
* C4F8
* O2
* Ar
* Cl2
* SiCl4
* CH4
* H2
* HBr

== Resources ==
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/98cjegiimwwivn6zr9ltig1shfb5m6bb General Use SOP]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]

===== Process Documents =====
* [https://caltech.box.com/s/nondj2ore8rg61tpur6hj4a3hvj8j9s5 Process Standards]
* [https://caltech.box.com/s/wybxe3urco5s6bqw5getfu7p0amxq7wx AlGaN/GaN Etch with Photoresist Mask]
* [https://caltech.box.com/s/q3sq9cwkp5dicigkj6gkvohuqtf5ivwx InP Etch]
* [https://caltech.box.com/s/4e22q4i3e5cpgjyrykf7r4bm0m0pob59 InP/ InGaAsP Laser Facet ICP Etching]
* [https://caltech.box.com/s/borba8iuvxi9qj2pe8g0vj5vo7xpta0d GaAs Via Hole Etch]
* [https://caltech.box.com/s/x0mm9bsvwc17ev3vx5ks759mwa36tpxm Selective GaAs Etch]
* [https://caltech.box.com/s/z3ibiol0xp1qwi6cyvnghbxs81p8j5q5 Silicon Waveguide Etch]
* [https://caltech.box.com/s/k8gj2bcluhy50in9m2hwz379hnkn9bdw Silicon Nitride etch]
* [https://caltech.box.com/s/4e6rskkmv1sgu9ipgfnrzeq0cguo1gc0 Hard Mask Oxide Etch]
* [https://caltech.box.com/s/daa9zeonjqphc8v963mi3lojo8me0u9j Cryo-Si Etch]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/126/System%20Manual%20for%20Caltech%2094-219845.pdf Oxford III-V Metal Etcher System Manual]
* [https://caltech.box.com/s/gclvux5tu28rpssvwncx5sm518uhmebl Edwards QDP 80 dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/f8f1fx1ffz4ql71suxsvrw0p20b2inp5 Manufacturer Data Sheet]

===== System Features =====
* Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
* Variable height 240 mm Cryo RIE electrode
* Parameter ramping software (Not Bosch)
* 100-mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
* 200 mm pumping port is fitted with a 200 mm variable gate valve for chamber isolation and process pressure control
* Twelve line gas pod with three non-toxic and six toxic digital mass-flow-controlled gas lines
* Alcatel 1300 l/s MAGLEV turbo pump
* Single-wafer automatic insertion load lock with soft pump option

===== System Specifications =====
* Chamber wall heating 80 °C
* Cryo table range -140 to 400 °C
* ICP 380 mm remote high-density plasma source with 5 kW RF generator and automatic matching unit close-coupled to the source
* Substrate bias control by 30 / 300 W RIE source
* Helium back-side wafer cooling

ICP-RIE: III-V, Metal & Silicon Etcher

2019-05-28T22:18:51Z

Nathslee: /* Description */

{{InstrumentInfoboxOneImage|
|InstrumentName = III-V, Metal & Si Etcher
|HeaderColor = #FFE2B9
|ImageOne = ICP-RIE_III-V,Metal,Si-Etcher.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Etching|Etching]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Nathan S. Lee]]
|StaffEmail = nathslee@caltech.edu
|StaffPhone = 626-395-1319
|Manufacturer = Oxford Instruments
|Techniques = pseudo-Bosch & Cryogenic Si Etch Compound Semiconductor Etching
|EmailList = kni-oxfordicp
|EmailListName = Oxford ICP
|Model = Plasmalab System 100
}}
== Description ==
The III-V, Metal & Silicon inductively-coupled plasma reactive-ion etcher (ICP-RIE) is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for the etching of compound semiconductors, metals, and silicon. In addition to a wide range of gases for etching a variety of III-V materials and metals, this system is configured for highly-selective ICP-RIE of silicon via the pseudo-Bosch process, allowing silicon etching with C4F8 and SF6 gases as well as cryogenic silicon etching with SF6 and O2 over a temperature range of -140 to 300 °C. This system supports wafer sizes up to 6 inches.
===== Applications =====
* InP grating etch
* GaAs photonics device etch
* pseudo-Bosch of silicon
* Metals etch
* Cryogenic etch of silicon (available upon request)
===== Allowed Material in Etcher =====
* Si, SixNy, SiO2, Ge, InP, GaAs, Al, Mo, Nb, W, Ti
* PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3, Cr hard masks
* Metal in etch stack
===== Etching Gas List =====
* SF6
* C4F8
* O2
* Ar
* Cl2
* SiCl4
* CH4
* H2
* HBr

== Resources ==
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/98cjegiimwwivn6zr9ltig1shfb5m6bb General Use SOP]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]

===== Process Documents =====
* [https://caltech.box.com/s/nondj2ore8rg61tpur6hj4a3hvj8j9s5 Process Standards]
* [https://caltech.box.com/s/wybxe3urco5s6bqw5getfu7p0amxq7wx AlGaN/GaN Etch with Photoresist Mask]
* [https://caltech.box.com/s/q3sq9cwkp5dicigkj6gkvohuqtf5ivwx InP Etch]
* [https://caltech.box.com/s/4e22q4i3e5cpgjyrykf7r4bm0m0pob59 InP/ InGaAsP Laser Facet ICP Etching]
* [https://caltech.box.com/s/borba8iuvxi9qj2pe8g0vj5vo7xpta0d GaAs Via Hole Etch]
* [https://caltech.box.com/s/x0mm9bsvwc17ev3vx5ks759mwa36tpxm Selective GaAs Etch]
* [https://caltech.box.com/s/z3ibiol0xp1qwi6cyvnghbxs81p8j5q5 Silicon Waveguide Etch]
* [https://caltech.box.com/s/k8gj2bcluhy50in9m2hwz379hnkn9bdw Silicon Nitride etch]
* [https://caltech.box.com/s/4e6rskkmv1sgu9ipgfnrzeq0cguo1gc0 Hard Mask Oxide Etch]
* [https://caltech.box.com/s/daa9zeonjqphc8v963mi3lojo8me0u9j Cryo-Si Etch]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/126/System%20Manual%20for%20Caltech%2094-219845.pdf Oxford III-V Metal Etcher System Manual]
* [https://caltech.box.com/s/gclvux5tu28rpssvwncx5sm518uhmebl Edwards QDP 80 dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/f8f1fx1ffz4ql71suxsvrw0p20b2inp5 Manufacturer Data Sheet]

===== System Features =====
* Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
* Variable height 240 mm Cryo RIE electrode
* Parameter ramping software (Not Bosch)
* 100-mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
* 200 mm pumping port is fitted with a 200 mm variable gate valve for chamber isolation and process pressure control
* Twelve line gas pod with three non-toxic and six toxic digital mass-flow-controlled gas lines
* Alcatel 1300 l/s MAGLEV turbo pump
* Single-wafer automatic insertion load lock with soft pump option

===== System Specifications =====
* Chamber wall heating 80 °C
* Cryo table range -140 to 400 °C
* ICP 380 mm remote high-density plasma source with 5 kW RF generator and automatic matching unit close-coupled to the source
* Substrate bias control by 30 / 300 W RIE source
* Helium back-side wafer cooling

DRIE: Bosch & Cryo ICP-RIE for Silicon

2019-05-28T22:15:16Z

Nathslee: /* Description */

{{InstrumentInfobox|
|InstrumentName = DRIE
|HeaderColor = #FFE2B9
|ImageOne = Silicon-Microcones_Paul-A-Kempler.jpg
|ImageTwo = DRIE_Bosch-and-Cryo_ICP–RIE_.jpg
|InstrumentType = [[Equipment_List#Etching|Etching]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Nathan S. Lee]]
|StaffEmail = nathslee@caltech.edu
|StaffPhone = 626-395-1319
|Manufacturer = Oxford Instruments
|Techniques = Bosch & Cryogenic Etch of Silicon
|EmailList = kni-oxfordicp
|EmailListName = Oxford ICP
|Model = Plasmalab System 100
}}
== Description ==
The MEMS / Bosch / Cryo inductively-coupled plasma reactive-ion etch (ICP-RIE) is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for silicon etching. This system is configured for deep reactive-ion etching (DRIE) via the Bosch process, allowing silicon etching with SF6 and C4F8 gases. Close-coupled gas pods are included in this system for fast Bosch switching.
The silicon ICP-RIE has a variable temperature stage (-150 to 300 °C) to permit cryogenic etching of silicon with SF6 and O2 if needed. This system supports wafer sizes up to 6 inches and provides accurate deep etching capabilities for silicon only.
===== Applications =====
* Deep silicon etch using Bosch process
* Cryogenic etch of silicon
* pseudo-Bosch etch of silicon
===== Allowed material in DRIE =====
* Si, SixNy, SiO2, Ge
* PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3 hard masks
* Buried/backside metal ok if never exposed (not an etch stop)
===== DRIE Gas List =====
* SF6
* C4F8
* O2
* Ar
* N2

== Resources ==
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/98cjegiimwwivn6zr9ltig1shfb5m6bb General Use SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]

===== Process Documents =====
* [https://caltech.box.com/s/3n21r2o30u476ppnxfp657o3zbs9f0on Process Standards]
* [https://caltech.box.com/s/z3ibiol0xp1qwi6cyvnghbxs81p8j5q5 Silicon Waveguide Etch]
* [https://caltech.box.com/s/c622brbs1udx5hqc744jvdd7wtf2mw32 Bosch Si Etch]
* [https://caltech.box.com/s/v92jrijz2iijzzlnyrbzbolov7zvo3w0 High-Rate Bosch Si Etch]
* [https://caltech.box.com/s/daa9zeonjqphc8v963mi3lojo8me0u9j Cryo-Si Etch]
* [https://caltech.box.com/s/ekzldcen8pjhok0qbpdy796xvs3icae4 Isotropic Si Etch]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]
===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/125/LabRunr%20System%20Manual%20for%20Caltech%2094-219846.pdf Oxford Plasmalab System 100 DRIE Manual]
* [https://caltech.box.com/s/gclvux5tu28rpssvwncx5sm518uhmebl Edwards QDP 80 dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/85mj9roas98jtwee9d22hk0wk9un54fl Manufacturer System Configuration]
===== System Features =====
* Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
* Variable height 240 mm Cryo RIE electrode
* Parameter ramping software
* 100 mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
* 200 mm pumping port is fitted with a 200 mm variable gate valve for chamber isolation and process pressure control
* Close-coupled gas pod to ICP for two digital non-toxic mass-flow-controlled gas lines (SF6, and C4F8)
* Six line gas pod with three non-toxic digital mass-flow-controlled gas lines
* Alcatel 1300 l/s MAGLEV turbo pump
* Single-wafer automatic insertion load lock with soft pump option
* Single user license for Anisotropic Silicon Etch Process (Bosch)
===== System Specifications =====
* Chamber wall heating: 80 °C
* Cryo table range: -150 to 400 °C
* ICP 380 mm remote high-density plasma source with 8 kW RF generator and automatic matching unit close-coupled to the source
* Substrate bias control by 30 / 300W RIE source
* Helium back-side wafer cooling

DRIE: Bosch & Cryo ICP-RIE for Silicon

2019-05-28T22:03:52Z

Nathslee: /* Description */

{{InstrumentInfobox|
|InstrumentName = DRIE
|HeaderColor = #FFE2B9
|ImageOne = Silicon-Microcones_Paul-A-Kempler.jpg
|ImageTwo = DRIE_Bosch-and-Cryo_ICP–RIE_.jpg
|InstrumentType = [[Equipment_List#Etching|Etching]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Nathan S. Lee]]
|StaffEmail = nathslee@caltech.edu
|StaffPhone = 626-395-1319
|Manufacturer = Oxford Instruments
|Techniques = Bosch & Cryogenic Etch of Silicon
|EmailList = kni-oxfordicp
|EmailListName = Oxford ICP
|Model = Plasmalab System 100
}}
== Description ==
The MEMS / Bosch / Cryo inductively-coupled plasma reactive-ion etch (ICP-RIE) is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for silicon etching. This system is configured for deep reactive-ion etching (DRIE) via the Bosch process, allowing silicon etching with SF6 and C4F8 gases. Close-coupled gas pods are included in this system for fast Bosch switching; this allows the etching of bulk silicon for MEMS applications with etch rates of approximately 10-25 μm/min. The silicon ICP-RIE has a variable temperature stage (-150 to 400 °C) to permit cryogenic etching of silicon with SF6 and O2 if needed. This system supports wafer sizes up to 6 inches and provides accurate deep etching capabilities for silicon only.
===== Applications =====
* Deep silicon etch using Bosch process
* Cryogenic etch of silicon
* pseudo-Bosch etch of silicon
===== Allowed material in DRIE =====
* Si, SixNy, SiO2, Ge
* PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3 hard masks
* Buried/backside metal ok if never exposed (not an etch stop)
===== DRIE Gas List =====
* SF6
* C4F8
* O2
* Ar
* N2

== Resources ==
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/98cjegiimwwivn6zr9ltig1shfb5m6bb General Use SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]

===== Process Documents =====
* [https://caltech.box.com/s/3n21r2o30u476ppnxfp657o3zbs9f0on Process Standards]
* [https://caltech.box.com/s/z3ibiol0xp1qwi6cyvnghbxs81p8j5q5 Silicon Waveguide Etch]
* [https://caltech.box.com/s/c622brbs1udx5hqc744jvdd7wtf2mw32 Bosch Si Etch]
* [https://caltech.box.com/s/v92jrijz2iijzzlnyrbzbolov7zvo3w0 High-Rate Bosch Si Etch]
* [https://caltech.box.com/s/daa9zeonjqphc8v963mi3lojo8me0u9j Cryo-Si Etch]
* [https://caltech.box.com/s/ekzldcen8pjhok0qbpdy796xvs3icae4 Isotropic Si Etch]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]
===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/125/LabRunr%20System%20Manual%20for%20Caltech%2094-219846.pdf Oxford Plasmalab System 100 DRIE Manual]
* [https://caltech.box.com/s/gclvux5tu28rpssvwncx5sm518uhmebl Edwards QDP 80 dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/85mj9roas98jtwee9d22hk0wk9un54fl Manufacturer System Configuration]
===== System Features =====
* Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
* Variable height 240 mm Cryo RIE electrode
* Parameter ramping software
* 100 mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
* 200 mm pumping port is fitted with a 200 mm variable gate valve for chamber isolation and process pressure control
* Close-coupled gas pod to ICP for two digital non-toxic mass-flow-controlled gas lines (SF6, and C4F8)
* Six line gas pod with three non-toxic digital mass-flow-controlled gas lines
* Alcatel 1300 l/s MAGLEV turbo pump
* Single-wafer automatic insertion load lock with soft pump option
* Single user license for Anisotropic Silicon Etch Process (Bosch)
===== System Specifications =====
* Chamber wall heating: 80 °C
* Cryo table range: -150 to 400 °C
* ICP 380 mm remote high-density plasma source with 8 kW RF generator and automatic matching unit close-coupled to the source
* Substrate bias control by 30 / 300W RIE source
* Helium back-side wafer cooling

Silicon Deposition: Oxford Instruments Plasmalab System 100 PECVD

2019-05-28T21:58:09Z

Nathslee: /* Description */

{{InstrumentInfoboxOneImage|
|InstrumentName = PECVD
|HeaderColor = #F2682A
|ImageOne = PECVD_Oxford-System-100.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Deposition|Deposition]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Nathan S. Lee]]
|StaffEmail = nathslee@caltech.edu
|StaffPhone = 626-395-1319
|Manufacturer = Oxford Instruments
|Model = Plasmalab System 100
|Techniques = Amorphous Silicon Deposition, Silicon Dioxide Deposition, Silicon Nitride Deposition
|EmailList = kni-oxfordpecvd
|EmailListName = Oxford PECVD
}}
== Description ==
The Plasma-Enhanced Chemical Vapor Deposition (PECVD) system is an Oxford Instruments Plasma Technology Plasmalab System 100 platform that is optimized for amorphous silicon, silicon dioxide, and silicon nitride deposition. The PECVD has a variable temperature stage (RT to 600 °C). This system supports wafer sizes up to 6 inches, and provides PECVD film growth over a wide range of process conditions.
===== Applications =====
* Amorphous Silicon Deposition
* Silicon Dioxide Deposition
* Silicon Nitride Deposition
===== Allowed material in PECVD System =====
* Si, SixNy, SiO2, SOI
* Hard masks compatible with process temperature
===== PECVD Gas List =====
* SiH4 (5% in N2 and Ar)
* NH3
* N2O
* N2
* 80%CF4/O2

== Resources ==
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/c8qx3ikzjb05x44o4updpqs36ra39ytw KNI SOP]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]
===== Process Documents =====
* [https://caltech.box.com/s/0e14n82o7o9yziqmlygkakfcv1lp65iu Process Standards]
* [https://caltech.box.com/s/6b2ivuuguflqjaqby5werlcslmmudryf High rate SiOx]
* [https://caltech.box.com/s/vi6vb1nz8thm3sflt5ncoyhi62tomi82 High rate SiNx]
* [https://caltech.box.com/s/tc4j0yr2jazv0rd6ey22ri8jd1asl326 Low Rate SiOx]
* [https://caltech.box.com/s/r3socf5rslp7qs9rb5o7vvpyp12qf0ps Low rate SiNx]
* [https://caltech.box.com/s/6acyh95hslt0q711makbllgqjrexpew1 Amorphous silicon deposition (Silane/helium)]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]
===== Manufacturer Manuals =====
* [https://caltech.box.com/s/elhzieiw8fjdbucugpbbk3d22t2yxnkz Oxford PECVD System Manual]
* [https://caltech.box.com/s/zqfonyv64m2m76mo8b4xn63ljz9ee4i5 Alcatel ADS 602P dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/kvgp7d7zx9gczapf7iun791m234vevod Manufacturer Data Sheet]
===== System Features =====
* Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* PECVD process chamber with 160 mm pumping port, view port, and an additional rear port for optical emission end-point-detection
* Heated upper electrode to prevent condensation of low vapor pressure precursors
* PECVD 205 mm electrically heated (700 °C) lower electrode with central wafer lift mechanism
* Parameter ramping software
* 5 Torr capacitance manometer for process control, and penning for base pressure measurement
* Process chamber pumping with 63 mm branch to APC, and isolation valve; chamber base pressure turbo, backed by a refurbished dry pump with roots
* Twelve line gas pod with two non-toxic and treeh toxic digital mass-flow-controlled gas lines and cleaning gas
* Chamber Gas ring, with split gas manifold
* Liquid vapor delivery system
* Single-wafer automatic insertion load lock with soft pump option
===== System Specifications =====
* Chamber wall heating 80 °C
* 30/300 W RF generator close-coupled to the upper electrode through an automatic matching unit; the generator is configured to operate in a low-power mode (0-30 W) for higher accuracy during low-rate deposition processes
* 600 W solid-state 50-460 kHz LF generator

FlexAL II: Atomic Layer Deposition (ALD)

2019-05-28T21:50:58Z

Nathslee: /* SOPs & Troubleshooting */

FlexAL II: Atomic Layer Deposition (ALD)

2019-05-28T17:46:14Z

Nathslee: /* Process Documents */

ICP-RIE: Dielectric Etcher

2019-05-28T17:29:27Z

Nathslee: /* Process Documents */

{{InstrumentInfoboxOneImage|
|InstrumentName = Dielectric Etcher
|HeaderColor = #FFE2B9
|ImageOne = ICP-RIE_Dielectric-Material-Etcher_.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Etching|Etching]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Nathan S. Lee]]
|StaffEmail = nathslee@caltech.edu
|StaffPhone = 626-395-1319
|Manufacturer = Oxford Instruments
|Techniques = Dielectric Material Etching
|EmailList = kni-oxfordicp
|EmailListName = Oxford ICP
|Model = Plasmalab System 100
}}
== Description ==
The Dielectric inductively-coupled plasma reactive-ion etcher (ICP-RIE) is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for silicon etching. This system is configured for silicon etching with "pseudoBosch" C4F8 and SF6 gases, and cryogenic silicon etch with SF6 and O2. The silicon ICP-RIE has a variable temperature stage (-150 to 400 °C). This system supports wafer sizes up to 6 inches, and provides accurate deep etching capabilities for silicon and "silicon-like" samples only.
===== Applications =====
* Cryogenic etch of silicon
* pseudo-Bosch of silicon
===== Allowed material in Dielectric Etch System =====
* Si, SixNy, Ge
* PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3 hard masks
* No metals

===== Dielectric Etcher Gas List =====
* SF6
* C4F8
* O2
* Ar
* N2
* CHF3
* N2O
* NH3

== Resources ==
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/98cjegiimwwivn6zr9ltig1shfb5m6bb General Use SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]

===== Process Documents =====
* [https://caltech.box.com/s/k8gj2bcluhy50in9m2hwz379hnkn9bdw Process Standards]
* [https://caltech.box.com/s/z3ibiol0xp1qwi6cyvnghbxs81p8j5q5 Silicon Waveguide Etch]
* [https://caltech.box.com/s/k8gj2bcluhy50in9m2hwz379hnkn9bdw Silicon Nitride etch]
* [https://caltech.box.com/s/daa9zeonjqphc8v963mi3lojo8me0u9j Cryo-Si Etch]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]

===== Manufacturer Manuals =====
* [https://caltech.box.com/s/tfieodeis71aligdpgp3g13kuceefnh0 Oxford Plasmalab System 100 Dielectric Etcher Manual]
* [https://caltech.box.com/s/juzfel0sy2fv6y3d1zcul8lc3z6ipha4 Edwards Pyrophoric Conditioning System Manual]
* [https://caltech.box.com/s/gclvux5tu28rpssvwncx5sm518uhmebl Edwards QDP 80 dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/85mj9roas98jtwee9d22hk0wk9un54fl Manufacturer System Configuration]
===== System Features =====
* Universal base console which houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
* Variable height 240 mm Cryo RIE electrode
* Parameter ramping software (Not Bosch)
* 100-mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
* 200 mm pumping port is fitted with a 200mm variable gate valve for chamber isolation and process pressure control
* Twelve line gas pod with 7 non-toxic and 3 toxic digital mass-flow-controlled gas lines
* Chamber Gas ring, with split gas manifold
* Alcatel 1300 l/s MAGLEV turbo pump
* Single-wafer automatic insertion load lock with soft pump option
===== System Specifications =====
* Chamber wall heating 80 °C
* Cryo table range -140 to 400 °C
* ICP 380 mm remote high-density plasma source with 5 kW RF generator and automatic matching unit close-coupled to the source.
* Substrate bias control by 30 / 300 W RIE source
* Helium back-side wafer cooling

ICP-RIE: Dielectric Etcher

2019-05-28T17:28:11Z

Nathslee: /* Allowed material in Dielectric Etch System */

{{InstrumentInfoboxOneImage|
|InstrumentName = Dielectric Etcher
|HeaderColor = #FFE2B9
|ImageOne = ICP-RIE_Dielectric-Material-Etcher_.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Etching|Etching]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Nathan S. Lee]]
|StaffEmail = nathslee@caltech.edu
|StaffPhone = 626-395-1319
|Manufacturer = Oxford Instruments
|Techniques = Dielectric Material Etching
|EmailList = kni-oxfordicp
|EmailListName = Oxford ICP
|Model = Plasmalab System 100
}}
== Description ==
The Dielectric inductively-coupled plasma reactive-ion etcher (ICP-RIE) is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for silicon etching. This system is configured for silicon etching with "pseudoBosch" C4F8 and SF6 gases, and cryogenic silicon etch with SF6 and O2. The silicon ICP-RIE has a variable temperature stage (-150 to 400 °C). This system supports wafer sizes up to 6 inches, and provides accurate deep etching capabilities for silicon and "silicon-like" samples only.
===== Applications =====
* Cryogenic etch of silicon
* pseudo-Bosch of silicon
===== Allowed material in Dielectric Etch System =====
* Si, SixNy, Ge
* PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3 hard masks
* No metals

===== Dielectric Etcher Gas List =====
* SF6
* C4F8
* O2
* Ar
* N2
* CHF3
* N2O
* NH3

== Resources ==
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/98cjegiimwwivn6zr9ltig1shfb5m6bb General Use SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]

===== Process Documents =====
* [https://caltech.box.com/s/k8gj2bcluhy50in9m2hwz379hnkn9bdw Process Standards]
* [https://caltech.box.com/s/z3ibiol0xp1qwi6cyvnghbxs81p8j5q5 Silicon Waveguide Etch]
* [https://caltech.box.com/s/k8gj2bcluhy50in9m2hwz379hnkn9bdw Silicon Nitride etch]
* [https://caltech.box.com/s/4e6rskkmv1sgu9ipgfnrzeq0cguo1gc0 Hard Mask Oxide Etch]
* [https://caltech.box.com/s/daa9zeonjqphc8v963mi3lojo8me0u9j Cryo-Si Etch]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]
===== Manufacturer Manuals =====
* [https://caltech.box.com/s/tfieodeis71aligdpgp3g13kuceefnh0 Oxford Plasmalab System 100 Dielectric Etcher Manual]
* [https://caltech.box.com/s/juzfel0sy2fv6y3d1zcul8lc3z6ipha4 Edwards Pyrophoric Conditioning System Manual]
* [https://caltech.box.com/s/gclvux5tu28rpssvwncx5sm518uhmebl Edwards QDP 80 dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/85mj9roas98jtwee9d22hk0wk9un54fl Manufacturer System Configuration]
===== System Features =====
* Universal base console which houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
* Variable height 240 mm Cryo RIE electrode
* Parameter ramping software (Not Bosch)
* 100-mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
* 200 mm pumping port is fitted with a 200mm variable gate valve for chamber isolation and process pressure control
* Twelve line gas pod with 7 non-toxic and 3 toxic digital mass-flow-controlled gas lines
* Chamber Gas ring, with split gas manifold
* Alcatel 1300 l/s MAGLEV turbo pump
* Single-wafer automatic insertion load lock with soft pump option
===== System Specifications =====
* Chamber wall heating 80 °C
* Cryo table range -140 to 400 °C
* ICP 380 mm remote high-density plasma source with 5 kW RF generator and automatic matching unit close-coupled to the source.
* Substrate bias control by 30 / 300 W RIE source
* Helium back-side wafer cooling

Dual Chamber RIE: Silicon, III-V Material & Organics Etcher

2019-05-28T17:11:46Z

Nathslee: /* RIE Gas List */

{{InstrumentInfoboxOneImage|
|InstrumentName = Dual Chamber RIE
|HeaderColor = #FFE2B9
|ImageOne = Plasmatherm-Dual-Chamber-RIE.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Etching|Etching]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Nathan S. Lee]]
|StaffEmail = nathslee@caltech.edu
|StaffPhone = 626-395-1319
|Manufacturer = Plasma-Therm
|Model = SLR 720
|Techniques = Silicon and compound semiconductor Reactive Ion Etching
|EmailList = kni-plasmatherm
|EmailListName = Plasmatherm RIE
}}
== Description ==
The Plasma-Therm SLR 720 is a dual-chamber reactive ion etching (RIE) system with a load-lock. It is designated for etching silicon and III-V compound semiconductors with a traditional RIE process.
===== Applications =====
* Silicon Etching
* III-V Material Etching
* Organic Material Etching

===== Allowed Material in RIE =====
* Si, SixNy, SiO2, Ge
* PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3 hard masks
* Buried/backside metal ok if never exposed (not an etch stop)

===== RIE Gas List =====
* SF6
* CHF3
* CF4
* O2
* Ar
* He
* H2

== Resources ==
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/98cjegiimwwivn6zr9ltig1shfb5m6bb General Use SOP]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]
===== Process Documents =====
* [https://caltech.box.com/s/3n21r2o30u476ppnxfp657o3zbs9f0on Process Standards]
* [https://caltech.box.com/s/z3ibiol0xp1qwi6cyvnghbxs81p8j5q5 Silicon Waveguide Etch]
* [https://caltech.box.com/s/c622brbs1udx5hqc744jvdd7wtf2mw32 Bosch Si Etch]
* [https://caltech.box.com/s/v92jrijz2iijzzlnyrbzbolov7zvo3w0 High-Rate Bosch Si Etch]
* [https://caltech.box.com/s/daa9zeonjqphc8v963mi3lojo8me0u9j Cryo-Si Etch]
* [https://caltech.box.com/s/ekzldcen8pjhok0qbpdy796xvs3icae4 Isotropic Si Etch]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]
===== Manufacturer Manuals =====
* [https://caltech.box.com/s/tfieodeis71aligdpgp3g13kuceefnh0 Oxford Plasmalab System 100 DRIE Manual]
* [https://caltech.box.com/s/gclvux5tu28rpssvwncx5sm518uhmebl Edwards QDP 80 dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/85mj9roas98jtwee9d22hk0wk9un54fl Manufacturer System Configuration]
===== System Features =====
* Universal base console which houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
* Variable height 240 mm Cryo RIE electrode
* Parameter ramping software
* 100 mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
* 200 mm pumping port is fitted with a 200 mm variable gate valve for chamber isolation and process pressure control
* Close-coupled gas pod to ICP for two digital non-toxic mass-flow-controlled gas lines (SF6, and C4F8)
* Six line gas pod with 3 non-toxic digital mass-flow-controlled gas lines
* Alcatel 1300 l/s MAGLEV turbo pump
* Single-wafer automatic insertion load lock with soft pump option
* Single user license for Anisotropic Silicon Etch Process (Bosch)
===== System Specifications =====
* Chamber wall heating 80 °C
* Cryo table range -150 to 400 °C
* ICP 380mm remote high-density plasma source with 8 kW RF generator and automatic matching unit close-coupled to the source.
* Substrate bias control by 30 / 300 W RIE source
* Helium back-side wafer cooling

Silicon Deposition: Oxford Instruments Plasmalab System 100 PECVD

2019-05-28T16:38:39Z

Nathslee: /* PECVD Gas List */

{{InstrumentInfoboxOneImage|
|InstrumentName = PECVD
|HeaderColor = #F2682A
|ImageOne = PECVD_Oxford-System-100.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Deposition|Deposition]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Nathan S. Lee]]
|StaffEmail = nathslee@caltech.edu
|StaffPhone = 626-395-1319
|Manufacturer = Oxford Instruments
|Model = Plasmalab System 100
|Techniques = Amorphous Silicon Deposition, Silicon Dioxide Deposition, Silicon Nitride Deposition
|EmailList = kni-oxfordpecvd
|EmailListName = Oxford PECVD
}}
== Description ==
The Plasma-Enhanced Chemical Vapor Deposition (PECVD) system is an Oxford Instruments Plasma Technology Plasmalab System 100 platform that is optimized for amorphous silicon, silicon dioxide, and silicon nitride deposition. The PECVD has a variable temperature stage (-150 to 700 °C). This system supports wafer sizes up to 6 inches, and provides PECVD film growth over a wide range of process conditions.
===== Applications =====
* Amorphous Silicon Deposition
* Silicon Dioxide Deposition
* Silicon Nitride Deposition
===== Allowed material in PECVD System =====
* Si, SixNy, SiO2, SOI
* Hard masks compatible with process temperature
===== PECVD Gas List =====
* SiH4 (5% in N2 and Ar)
* NH3
* N2O
* N2
* 80%CF4/O2

== Resources ==
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/c8qx3ikzjb05x44o4updpqs36ra39ytw KNI SOP]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]
===== Process Documents =====
* [https://caltech.box.com/s/0e14n82o7o9yziqmlygkakfcv1lp65iu Process Standards]
* [https://caltech.box.com/s/6b2ivuuguflqjaqby5werlcslmmudryf High rate SiOx]
* [https://caltech.box.com/s/vi6vb1nz8thm3sflt5ncoyhi62tomi82 High rate SiNx]
* [https://caltech.box.com/s/tc4j0yr2jazv0rd6ey22ri8jd1asl326 Low Rate SiOx]
* [https://caltech.box.com/s/r3socf5rslp7qs9rb5o7vvpyp12qf0ps Low rate SiNx]
* [https://caltech.box.com/s/6acyh95hslt0q711makbllgqjrexpew1 Amorphous silicon deposition (Silane/helium)]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]
===== Manufacturer Manuals =====
* [https://caltech.box.com/s/elhzieiw8fjdbucugpbbk3d22t2yxnkz Oxford PECVD System Manual]
* [https://caltech.box.com/s/zqfonyv64m2m76mo8b4xn63ljz9ee4i5 Alcatel ADS 602P dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/kvgp7d7zx9gczapf7iun791m234vevod Manufacturer Data Sheet]
===== System Features =====
* Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* PECVD process chamber with 160 mm pumping port, view port, and an additional rear port for optical emission end-point-detection
* Heated upper electrode to prevent condensation of low vapor pressure precursors
* PECVD 205 mm electrically heated (700 °C) lower electrode with central wafer lift mechanism
* Parameter ramping software
* 5 Torr capacitance manometer for process control, and penning for base pressure measurement
* Process chamber pumping with 63 mm branch to APC, and isolation valve; chamber base pressure turbo, backed by a refurbished dry pump with roots
* Twelve line gas pod with two non-toxic and treeh toxic digital mass-flow-controlled gas lines and cleaning gas
* Chamber Gas ring, with split gas manifold
* Liquid vapor delivery system
* Single-wafer automatic insertion load lock with soft pump option
===== System Specifications =====
* Chamber wall heating 80 °C
* 30/300 W RF generator close-coupled to the upper electrode through an automatic matching unit; the generator is configured to operate in a low-power mode (0-30 W) for higher accuracy during low-rate deposition processes
* 600 W solid-state 50-460 kHz LF generator

Silicon Deposition: Oxford Instruments Plasmalab System 100 PECVD

2019-05-28T16:38:13Z

Nathslee: /* PECVD Gas List */

{{InstrumentInfoboxOneImage|
|InstrumentName = PECVD
|HeaderColor = #F2682A
|ImageOne = PECVD_Oxford-System-100.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Deposition|Deposition]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Nathan S. Lee]]
|StaffEmail = nathslee@caltech.edu
|StaffPhone = 626-395-1319
|Manufacturer = Oxford Instruments
|Model = Plasmalab System 100
|Techniques = Amorphous Silicon Deposition, Silicon Dioxide Deposition, Silicon Nitride Deposition
|EmailList = kni-oxfordpecvd
|EmailListName = Oxford PECVD
}}
== Description ==
The Plasma-Enhanced Chemical Vapor Deposition (PECVD) system is an Oxford Instruments Plasma Technology Plasmalab System 100 platform that is optimized for amorphous silicon, silicon dioxide, and silicon nitride deposition. The PECVD has a variable temperature stage (-150 to 700 °C). This system supports wafer sizes up to 6 inches, and provides PECVD film growth over a wide range of process conditions.
===== Applications =====
* Amorphous Silicon Deposition
* Silicon Dioxide Deposition
* Silicon Nitride Deposition
===== Allowed material in PECVD System =====
* Si, SixNy, SiO2, SOI
* Hard masks compatible with process temperature
===== PECVD Gas List =====
* SiH4 (5% in N2 and Ar)
* NH3
* N2O
* 80%CF4/O2
* N2

== Resources ==
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/c8qx3ikzjb05x44o4updpqs36ra39ytw KNI SOP]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]
===== Process Documents =====
* [https://caltech.box.com/s/0e14n82o7o9yziqmlygkakfcv1lp65iu Process Standards]
* [https://caltech.box.com/s/6b2ivuuguflqjaqby5werlcslmmudryf High rate SiOx]
* [https://caltech.box.com/s/vi6vb1nz8thm3sflt5ncoyhi62tomi82 High rate SiNx]
* [https://caltech.box.com/s/tc4j0yr2jazv0rd6ey22ri8jd1asl326 Low Rate SiOx]
* [https://caltech.box.com/s/r3socf5rslp7qs9rb5o7vvpyp12qf0ps Low rate SiNx]
* [https://caltech.box.com/s/6acyh95hslt0q711makbllgqjrexpew1 Amorphous silicon deposition (Silane/helium)]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]
===== Manufacturer Manuals =====
* [https://caltech.box.com/s/elhzieiw8fjdbucugpbbk3d22t2yxnkz Oxford PECVD System Manual]
* [https://caltech.box.com/s/zqfonyv64m2m76mo8b4xn63ljz9ee4i5 Alcatel ADS 602P dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/kvgp7d7zx9gczapf7iun791m234vevod Manufacturer Data Sheet]
===== System Features =====
* Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* PECVD process chamber with 160 mm pumping port, view port, and an additional rear port for optical emission end-point-detection
* Heated upper electrode to prevent condensation of low vapor pressure precursors
* PECVD 205 mm electrically heated (700 °C) lower electrode with central wafer lift mechanism
* Parameter ramping software
* 5 Torr capacitance manometer for process control, and penning for base pressure measurement
* Process chamber pumping with 63 mm branch to APC, and isolation valve; chamber base pressure turbo, backed by a refurbished dry pump with roots
* Twelve line gas pod with two non-toxic and treeh toxic digital mass-flow-controlled gas lines and cleaning gas
* Chamber Gas ring, with split gas manifold
* Liquid vapor delivery system
* Single-wafer automatic insertion load lock with soft pump option
===== System Specifications =====
* Chamber wall heating 80 °C
* 30/300 W RF generator close-coupled to the upper electrode through an automatic matching unit; the generator is configured to operate in a low-power mode (0-30 W) for higher accuracy during low-rate deposition processes
* 600 W solid-state 50-460 kHz LF generator

Tube Furnaces for Wet & Dry Processing

2019-05-28T16:29:28Z

Nathslee: /* SOPs & Troubleshooting */

{{InstrumentInfoboxOneImage|
|InstrumentName = Tystar Tytan Tube Furnaces 1 & 2
|HeaderColor = #E6E7E8
|ImageOne = Tystar-Tytan-Tube-Furnaces.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Support_Tools|Support Tools]], [[Equipment_List#Thermal_Processing|Thermal Processing]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Nathan S. Lee]]
|StaffEmail = nathslee@caltech.edu
|StaffPhone = 626-395-1319
|Manufacturer = Tystar Corporation
|Model = Tytan Horizontal Diffusion Furnace
|Techniques = Oxidation, Annealing
|EmailList = kni-tystar@caltech.edu
|EmailListName = Tystar
}}
== Description ==
The system is designed for processing up to one-hundred, 150 mm (6") wafers per tube. Tube 1 is designated for wet & dry oxidation using a flask evaporator. Tube 2 is designated for dry oxidation and annealing.
===== Applications =====
* Dry & Wet oxidation
* Annealing
== Resources ==
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/yrvj5tar3r2e2ldq9orm2bh5mlkavw05 KNI SOP ]

Tube Furnaces for Wet & Dry Processing

2019-05-28T16:27:44Z

Nathslee: /* SOPs & Troubleshooting */

{{InstrumentInfoboxOneImage|
|InstrumentName = Tystar Tytan Tube Furnaces 1 & 2
|HeaderColor = #E6E7E8
|ImageOne = Tystar-Tytan-Tube-Furnaces.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Support_Tools|Support Tools]], [[Equipment_List#Thermal_Processing|Thermal Processing]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Nathan S. Lee]]
|StaffEmail = nathslee@caltech.edu
|StaffPhone = 626-395-1319
|Manufacturer = Tystar Corporation
|Model = Tytan Horizontal Diffusion Furnace
|Techniques = Oxidation, Annealing
|EmailList = kni-tystar@caltech.edu
|EmailListName = Tystar
}}
== Description ==
The system is designed for processing up to one-hundred, 150 mm (6") wafers per tube. Tube 1 is designated for wet & dry oxidation using a flask evaporator. Tube 2 is designated for dry oxidation and annealing.
===== Applications =====
* Dry & Wet oxidation
* Annealing
== Resources ==
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/yrvj5tar3r2e2ldq9orm2bh5mlkavw05 KNI SOP (Coming Soon)]

Tube Furnaces for Wet & Dry Processing

2019-05-24T21:21:23Z

Nathslee:

{{InstrumentInfoboxOneImage|
|InstrumentName = Tystar Tytan Tube Furnaces 1 & 2
|HeaderColor = #E6E7E8
|ImageOne =
|ImageTwo =
|InstrumentType = [[Equipment_List#Support_Tools|Support Tools]]
|RoomLocation =
|LabPhone = 626-395-1532
|PrimaryStaff = [[Nathan S. Lee]]
|StaffEmail = nathslee@caltech.edu
|StaffPhone = 626-395-1319
|Manufacturer = Tystar Corporation
|Model = Tystar Tytan Horizontal Diffusion Furnace
|Techniques = Oxidation/Annealing
|EmailList = kni-tystar@caltech.edu
|EmailListName = tystar
}}
== Description ==
The system is designed for processing up to 100 ea. 150 mm (6") wafers per tube. Tube 1 is designated for Wet/Dry oxidation using Flask Evaporator. Tube 2 is designated for Dry oxidation/Anneal.
===== Applications =====
* Dry/Wet oxidation
* Annealing
== Resources ==
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/98cjegiimwwivn6zr9ltig1shfb5m6bb KNI SOP]

Tube Furnaces for Wet & Dry Processing

2019-05-24T21:18:54Z

Nathslee: Created page with "{{InstrumentInfoboxOneImage| |InstrumentName = Tystar Tytan Tube Furnaces 1 & 2 |HeaderColor = #E6E7E8 |ImageOne = |ImageTwo = |InstrumentType = Equipment_List#Support_Too..."

File:Oxford etchers instrument image.jpg

2019-04-23T19:04:33Z

Nathslee: