The KNI Lab at Caltech - User contributions [en]

ICP-RIE: III-V, Metal & Silicon Etcher

2024-02-05T20:22:06Z

Kmmckenz: clarified allowed materials

{{InstrumentInfoboxOneImage|
|InstrumentName = III-V, Metal & Si Etcher
|HeaderColor = #FFE2B9
|ImageOne = ICP-RIE_III-V,Metal,Si-Etcher.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Etching|Etching]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-5732
|Manufacturer = Oxford Instruments
|Techniques = pseudo-Bosch & Cryogenic Si Etch Compound Semiconductor Etching
|EmailList = kni-oxfordicp
|EmailListName = Oxford ICP
|Model = Plasmalab System 100
}}
== Description ==
The III-V, Metal & Silicon inductively-coupled plasma reactive-ion etcher (ICP-RIE) is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for the etching of compound semiconductors, metals, and silicon. In addition to a wide range of gases for etching a variety of III-V materials and metals, this system is configured for highly-selective ICP-RIE of silicon via the pseudo-Bosch process, allowing silicon etching with SF6 and C4F8 gases as well as cryogenic silicon etching with SF6 and O2 over a temperature range of -140 to 300 °C. This system supports wafer sizes up to 6 inches.
===== Applications =====
* InP grating etch
* GaAs photonics device etch
* pseudo-Bosch of silicon
* Metals etch
* Cryogenic etch of silicon (available upon request)
===== Allowed Material in Etcher =====
* Etch materials: Si, SixNy, SiO2, Ge, InP, GaAs, Al, Mo, Nb, W, Ti
* Masks: PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3, Cr hard masks
* Other: Metal in etch stack (not exposed to plasma)
===== Etching Gas List =====
* SF6
* C4F8
* O2
* Ar
* Cl2
* SiCl4
* CH4
* H2
* HBr

== Resources ==
===== Equipment Status =====
* [https://labrunr.caltech.edu/Equipment_2.aspx LabRunr Equipment Status] (Select Oxford_III_V from the dropdown menu)

===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/0qe85zye5mjlgqxorxa77tzgqgblv3ep General Use SOP]
* [https://caltech.box.com/s/681uz0b8zsv6ivy43a5ggsoydp5zlyza Oxfords reservation and use policy]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]

===== Process Documents =====
* [https://caltech.box.com/s/nondj2ore8rg61tpur6hj4a3hvj8j9s5 Process Standards]
* [https://caltech.box.com/s/8zfqalb9u11l31mj3iwydofa8qecyp47 Aluminum Etch via Chlorine/Methane/Hydrogen (KNI Recipe)]
* [https://caltech.box.com/s/wybxe3urco5s6bqw5getfu7p0amxq7wx AlGaN/GaN Etch with Photoresist Mask]
* [https://caltech.box.com/s/q3sq9cwkp5dicigkj6gkvohuqtf5ivwx InP Etch]
* [https://caltech.box.com/s/4e22q4i3e5cpgjyrykf7r4bm0m0pob59 InP/ InGaAsP Laser Facet ICP Etching]
* [https://caltech.box.com/s/borba8iuvxi9qj2pe8g0vj5vo7xpta0d GaAs Via Hole Etch]
* [https://caltech.box.com/s/x0mm9bsvwc17ev3vx5ks759mwa36tpxm Selective GaAs Etch]
* [https://caltech.box.com/s/z3ibiol0xp1qwi6cyvnghbxs81p8j5q5 Silicon Waveguide Etch]
* [https://caltech.box.com/s/k8gj2bcluhy50in9m2hwz379hnkn9bdw Silicon Nitride etch]
* [https://caltech.box.com/s/4e6rskkmv1sgu9ipgfnrzeq0cguo1gc0 Hard Mask Oxide Etch]
* [https://caltech.box.com/s/daa9zeonjqphc8v963mi3lojo8me0u9j Cryo-Si Etch]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]
* [https://caltech.box.com/s/3b9zbdj1uoazz7zbz8png25c2ba65vas Comparison of etch rates using different sample-fixing oils]
* [https://caltech.box.com/s/40kaaqur8ohyg55uq2pv3jqrzlgi98ts Comparison of Pseudo-Bosch ICP-RIE Etch of SiO2-SiNx]
* [https://caltech.box.com/s/wemw91xtjrh7ac34ks9ai3lv1oujivxa Al2O3 Etch in Oxford ICP and Plasmatherm RIE]

===== Review Articles =====
* [https://caltech.box.com/s/3fnc4a7qeyr1up6kth599j7ojybka2vb Guidelines for Etching Silicon MEMS Structures]
* [https://caltech.box.com/s/j61w7vr4f8cdjr64jrnz1t37oizdhl7f Etch rates for MEMS Processing - Part I]
* [https://caltech.box.com/s/ls0jl268j4at6z39g6kv8wivevpq80eh Etch Rates for MEMS Processing - Part II]
* [https://caltech.box.com/s/cetpre7d66gssbhtaicnhtovyo6ngzjv Dry Etching of Electronic Oxides, Polymers, and Semiconductors]
* [https://caltech.box.com/s/pauf384duhejuwzfwan71eam7nkvdrxw Alumina etch masks for fabrication of high-aspect-ratio silicon micropillars and nanopillars]
* [https://caltech.box.com/s/q42u5q46nmx2hm53szub556kwcrc0oih David Henry's thesis on dry etching in the KNI's tools]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/126/System%20Manual%20for%20Caltech%2094-219845.pdf Oxford III-V Metal Etcher System Manual] (login to LabRunr required)
* [https://caltech.box.com/s/gclvux5tu28rpssvwncx5sm518uhmebl Edwards QDP 80 dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/f8f1fx1ffz4ql71suxsvrw0p20b2inp5 Manufacturer Data Sheet]

===== System Features =====
* Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
* Variable height 240 mm Cryo RIE electrode
* Parameter ramping software (Not Bosch)
* 100-mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
* 200 mm pumping port is fitted with a 200 mm variable gate valve for chamber isolation and process pressure control
* Twelve line gas pod with three non-toxic and six toxic digital mass-flow-controlled gas lines
* Alcatel 1300 l/s MAGLEV turbo pump
* Single-wafer automatic insertion load lock with soft pump option

===== System Specifications =====
* Chamber wall heating 80 °C
* Cryo table range -140 to 400 °C
* ICP 380 mm remote high-density plasma source with 5 kW RF generator and automatic matching unit close-coupled to the source
* Substrate bias control by 30 / 300 W RIE source
* Helium back-side wafer cooling

== Related Tools ==
* [https://lab.kni.caltech.edu/ICP-RIE:_Dielectric_Etcher Oxford Dielectric ICP-RIE]
* [https://lab.kni.caltech.edu/DRIE:_Bosch_%26_Cryo_ICP-RIE_for_Silicon Oxford DRIE ICP-RIE]
* [https://lab.kni.caltech.edu/Dual_Chamber_RIE:_Silicon,_III-V_Material_%26_Organics_Etcher Plasma-Therm RIE]
* [https://lab.kni.caltech.edu/XeF2_Etcher_for_Silicon XeF2 Etcher]
* [https://lab.kni.caltech.edu/Plasma-Enhanced_Chemical_Vapor_Deposition_(PECVD) Oxford PECVD]
* [https://lab.kni.caltech.edu/FlexAL_II:_Atomic_Layer_Deposition_(ALD) Oxford ALD]

Dual Chamber RIE: Silicon, III-V Material & Organics Etcher

2023-08-22T21:16:40Z

Kmmckenz: /* SOPs & Troubleshooting */ added reservation policy

{{InstrumentInfoboxOneImage|
|InstrumentName = Dual Chamber RIE
|HeaderColor = #FFE2B9
|ImageOne = Dual-Chamber-RIE_Plasma-Therm-SLR.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Etching|Etching]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-5732
|Manufacturer = Plasma-Therm
|Model = SLR 720
|Techniques = Silicon and compound semiconductor Reactive Ion Etching
|EmailList = kni-plasmatherm
|EmailListName = Plasmatherm RIE
}}
== Description ==
The Plasma-Therm SLR 720 is a dual-chamber reactive ion etching (RIE) system with a load-lock. It is designated for etching silicon semiconductors with a traditional RIE process.
===== Applications =====
* Silicon Etching
* Organic Material Etching

===== Allowed Material in RIE =====
* Si, SixNy, SiO2, Ge
* PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3 hard masks
* Buried/backside metal ok if never exposed (not an etch stop)

===== RIE Gas List =====
* SF6
* CHF3
* CF4
* O2
* Ar
* He
* H2

== Resources ==
===== Equipment Status =====
* [https://labrunr.caltech.edu/Equipment_2.aspx LabRunr Equipment Status] (Select RIE from the dropdown menu)

===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/jsskat7yic4p7td31941dxuj97ja6er5 KNI SOP]
* [https://caltech.box.com/s/681uz0b8zsv6ivy43a5ggsoydp5zlyza Oxfords and RIE reservation and use policy]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]

===== Process Documents =====
* [https://caltech.box.com/s/3n21r2o30u476ppnxfp657o3zbs9f0on Process Standards]
* [https://caltech.box.com/s/wemw91xtjrh7ac34ks9ai3lv1oujivxa Al2O3 Etch in Oxford ICP and Plasmatherm RIE]

===== Review Articles =====
* [https://caltech.box.com/s/3fnc4a7qeyr1up6kth599j7ojybka2vb Guidelines for Etching Silicon MEMS Structures]
* [https://caltech.box.com/s/j61w7vr4f8cdjr64jrnz1t37oizdhl7f Etch rates for MEMS Processing - Part I]
* [https://caltech.box.com/s/ls0jl268j4at6z39g6kv8wivevpq80eh Etch Rates for MEMS Processing - Part II]
* [https://caltech.box.com/s/cetpre7d66gssbhtaicnhtovyo6ngzjv Dry Etching of Electronic Oxides, Polymers, and Semiconductors]
* [https://caltech.box.com/s/pauf384duhejuwzfwan71eam7nkvdrxw Alumina etch masks for fabrication of high-aspect-ratio silicon micropillars and nanopillars]

===== Manufacturer Manuals =====
* In progress

== Specifications ==
===== Manufacturer Specifications =====
* In progress
===== System Features =====
* In progress
===== System Specifications =====
* In progress

== Related Tools ==
* [https://lab.kni.caltech.edu/ICP-RIE:_III-V,_Metal_%26_Silicon_Etcher Oxford III-V ICP-RIE]
* [https://lab.kni.caltech.edu/ICP-RIE:_Dielectric_Etcher Oxford Dielectric ICP-RIE]
* [https://lab.kni.caltech.edu/DRIE:_Bosch_%26_Cryo_ICP-RIE_for_Silicon Oxford DRIE ICP-RIE]
* [https://lab.kni.caltech.edu/XeF2_Etcher_for_Silicon XeF2 Etcher]
* [https://lab.kni.caltech.edu/Plasma-Enhanced_Chemical_Vapor_Deposition_(PECVD) Oxford PECVD]
* [https://lab.kni.caltech.edu/FlexAL_II:_Atomic_Layer_Deposition_(ALD) Oxford ALD]

ICP-RIE: Dielectric Etcher

2023-08-22T21:16:11Z

Kmmckenz: /* SOPs & Troubleshooting */ added reservation policy

{{InstrumentInfoboxOneImage|
|InstrumentName = Dielectric Etcher
|HeaderColor = #FFE2B9
|ImageOne = ICP-RIE_Dielectric-Material-Etcher_.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Etching|Etching]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-5732
|Manufacturer = Oxford Instruments
|Techniques = Dielectric Material Etching
|EmailList = kni-oxfordicp
|EmailListName = Oxford ICP
|Model = Plasmalab System 100
}}
== Description ==
The Dielectric inductively-coupled plasma reactive-ion etcher (ICP-RIE) is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for silicon etching. This system is configured for silicon etching with "pseudoBosch" C4F8 and SF6 gases, and cryogenic silicon etch with SF6 and O2. The silicon ICP-RIE has a variable temperature stage (-150 to 400 °C). This system supports wafer sizes up to 6 inches, and provides accurate deep etching capabilities for silicon and "silicon-like" samples only.
===== Applications =====
* Cryogenic etch of silicon
* pseudo-Bosch of silicon
===== Allowed material in Dielectric Etch System =====
* Si, SixNy, Ge
* PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3 hard masks
* No metals

===== Dielectric Etcher Gas List =====
* SF6
* C4F8
* O2
* Ar
* N2
* N2O
* NH3

== Resources ==
===== Equipment Status =====
* [https://labrunr.caltech.edu/Equipment_2.aspx LabRunr Equipment Status] (Select Oxford_Dielectric from the dropdown menu)

===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/0qe85zye5mjlgqxorxa77tzgqgblv3ep General Use SOP]
* [https://caltech.box.com/s/681uz0b8zsv6ivy43a5ggsoydp5zlyza Oxfords reservation and use policy]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]

===== Process Documents =====
* [https://caltech.box.com/s/k8gj2bcluhy50in9m2hwz379hnkn9bdw Process Standards]
* [https://caltech.box.com/s/z3ibiol0xp1qwi6cyvnghbxs81p8j5q5 Silicon Waveguide Etch]
* [https://caltech.box.com/s/k8gj2bcluhy50in9m2hwz379hnkn9bdw Silicon Nitride etch]
* [https://caltech.box.com/s/daa9zeonjqphc8v963mi3lojo8me0u9j Cryo-Si Etch]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]
* [https://caltech.box.com/s/3b9zbdj1uoazz7zbz8png25c2ba65vas Comparison of etch rates using different sample-fixing oils]

===== Review Articles =====
* [https://caltech.box.com/s/3fnc4a7qeyr1up6kth599j7ojybka2vb Guidelines for Etching Silicon MEMS Structures]
* [https://caltech.box.com/s/j61w7vr4f8cdjr64jrnz1t37oizdhl7f Etch rates for MEMS Processing - Part I]
* [https://caltech.box.com/s/ls0jl268j4at6z39g6kv8wivevpq80eh Etch Rates for MEMS Processing - Part II]
* [https://caltech.box.com/s/cetpre7d66gssbhtaicnhtovyo6ngzjv Dry Etching of Electronic Oxides, Polymers, and Semiconductors]
* [https://caltech.box.com/s/pauf384duhejuwzfwan71eam7nkvdrxw Alumina etch masks for fabrication of high-aspect-ratio silicon micropillars and nanopillars]
* [https://caltech.box.com/s/q42u5q46nmx2hm53szub556kwcrc0oih David Henry's thesis on dry etching in the KNI's tools]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/124/System%20Manual%20for%20Caltech%2094-219846_a.pdf Oxford Plasmalab System 100 Dielectric Etcher Manual] (login to LabRunr required)
* [https://caltech.box.com/s/juzfel0sy2fv6y3d1zcul8lc3z6ipha4 Edwards Pyrophoric Conditioning System Manual]
* [https://caltech.box.com/s/gclvux5tu28rpssvwncx5sm518uhmebl Edwards QDP 80 dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/85mj9roas98jtwee9d22hk0wk9un54fl Manufacturer System Configuration]
===== System Features =====
* Universal base console which houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
* Variable height 240 mm Cryo RIE electrode
* Parameter ramping software (Not Bosch)
* 100-mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
* 200 mm pumping port is fitted with a 200mm variable gate valve for chamber isolation and process pressure control
* Twelve line gas pod with 7 non-toxic and 3 toxic digital mass-flow-controlled gas lines
* Chamber Gas ring, with split gas manifold
* Alcatel 1300 l/s MAGLEV turbo pump
* Single-wafer automatic insertion load lock with soft pump option
===== System Specifications =====
* Chamber wall heating 80 °C
* Cryo table range -140 to 400 °C
* ICP 380 mm remote high-density plasma source with 5 kW RF generator and automatic matching unit close-coupled to the source.
* Substrate bias control by 30 / 300 W RIE source
* Helium back-side wafer cooling

== Related Tools ==
* [https://lab.kni.caltech.edu/ICP-RIE:_III-V,_Metal_%26_Silicon_Etcher Oxford III-V ICP-RIE]
* [https://lab.kni.caltech.edu/DRIE:_Bosch_%26_Cryo_ICP-RIE_for_Silicon Oxford DRIE ICP-RIE]
* [https://lab.kni.caltech.edu/Dual_Chamber_RIE:_Silicon,_III-V_Material_%26_Organics_Etcher Plasma-Therm RIE]
* [https://lab.kni.caltech.edu/XeF2_Etcher_for_Silicon XeF2 Etcher]
* [https://lab.kni.caltech.edu/Plasma-Enhanced_Chemical_Vapor_Deposition_(PECVD) Oxford PECVD]
* [https://lab.kni.caltech.edu/FlexAL_II:_Atomic_Layer_Deposition_(ALD) Oxford ALD]

ICP-RIE: III-V, Metal & Silicon Etcher

2023-08-22T21:15:52Z

Kmmckenz: /* SOPs & Troubleshooting */ added reservation policy

{{InstrumentInfoboxOneImage|
|InstrumentName = III-V, Metal & Si Etcher
|HeaderColor = #FFE2B9
|ImageOne = ICP-RIE_III-V,Metal,Si-Etcher.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Etching|Etching]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-5732
|Manufacturer = Oxford Instruments
|Techniques = pseudo-Bosch & Cryogenic Si Etch Compound Semiconductor Etching
|EmailList = kni-oxfordicp
|EmailListName = Oxford ICP
|Model = Plasmalab System 100
}}
== Description ==
The III-V, Metal & Silicon inductively-coupled plasma reactive-ion etcher (ICP-RIE) is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for the etching of compound semiconductors, metals, and silicon. In addition to a wide range of gases for etching a variety of III-V materials and metals, this system is configured for highly-selective ICP-RIE of silicon via the pseudo-Bosch process, allowing silicon etching with SF6 and C4F8 gases as well as cryogenic silicon etching with SF6 and O2 over a temperature range of -140 to 300 °C. This system supports wafer sizes up to 6 inches.
===== Applications =====
* InP grating etch
* GaAs photonics device etch
* pseudo-Bosch of silicon
* Metals etch
* Cryogenic etch of silicon (available upon request)
===== Allowed Material in Etcher =====
* Si, SixNy, SiO2, Ge, InP, GaAs, Al, Mo, Nb, W, Ti
* PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3, Cr hard masks
* Metal in etch stack
===== Etching Gas List =====
* SF6
* C4F8
* O2
* Ar
* Cl2
* SiCl4
* CH4
* H2
* HBr

== Resources ==
===== Equipment Status =====
* [https://labrunr.caltech.edu/Equipment_2.aspx LabRunr Equipment Status] (Select Oxford_III_V from the dropdown menu)

===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/0qe85zye5mjlgqxorxa77tzgqgblv3ep General Use SOP]
* [https://caltech.box.com/s/681uz0b8zsv6ivy43a5ggsoydp5zlyza Oxfords reservation and use policy]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]

===== Process Documents =====
* [https://caltech.box.com/s/nondj2ore8rg61tpur6hj4a3hvj8j9s5 Process Standards]
* [https://caltech.box.com/s/8zfqalb9u11l31mj3iwydofa8qecyp47 Aluminum Etch via Chlorine/Methane/Hydrogen (KNI Recipe)]
* [https://caltech.box.com/s/wybxe3urco5s6bqw5getfu7p0amxq7wx AlGaN/GaN Etch with Photoresist Mask]
* [https://caltech.box.com/s/q3sq9cwkp5dicigkj6gkvohuqtf5ivwx InP Etch]
* [https://caltech.box.com/s/4e22q4i3e5cpgjyrykf7r4bm0m0pob59 InP/ InGaAsP Laser Facet ICP Etching]
* [https://caltech.box.com/s/borba8iuvxi9qj2pe8g0vj5vo7xpta0d GaAs Via Hole Etch]
* [https://caltech.box.com/s/x0mm9bsvwc17ev3vx5ks759mwa36tpxm Selective GaAs Etch]
* [https://caltech.box.com/s/z3ibiol0xp1qwi6cyvnghbxs81p8j5q5 Silicon Waveguide Etch]
* [https://caltech.box.com/s/k8gj2bcluhy50in9m2hwz379hnkn9bdw Silicon Nitride etch]
* [https://caltech.box.com/s/4e6rskkmv1sgu9ipgfnrzeq0cguo1gc0 Hard Mask Oxide Etch]
* [https://caltech.box.com/s/daa9zeonjqphc8v963mi3lojo8me0u9j Cryo-Si Etch]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]
* [https://caltech.box.com/s/3b9zbdj1uoazz7zbz8png25c2ba65vas Comparison of etch rates using different sample-fixing oils]
* [https://caltech.box.com/s/40kaaqur8ohyg55uq2pv3jqrzlgi98ts Comparison of Pseudo-Bosch ICP-RIE Etch of SiO2-SiNx]
* [https://caltech.box.com/s/wemw91xtjrh7ac34ks9ai3lv1oujivxa Al2O3 Etch in Oxford ICP and Plasmatherm RIE]

===== Review Articles =====
* [https://caltech.box.com/s/3fnc4a7qeyr1up6kth599j7ojybka2vb Guidelines for Etching Silicon MEMS Structures]
* [https://caltech.box.com/s/j61w7vr4f8cdjr64jrnz1t37oizdhl7f Etch rates for MEMS Processing - Part I]
* [https://caltech.box.com/s/ls0jl268j4at6z39g6kv8wivevpq80eh Etch Rates for MEMS Processing - Part II]
* [https://caltech.box.com/s/cetpre7d66gssbhtaicnhtovyo6ngzjv Dry Etching of Electronic Oxides, Polymers, and Semiconductors]
* [https://caltech.box.com/s/pauf384duhejuwzfwan71eam7nkvdrxw Alumina etch masks for fabrication of high-aspect-ratio silicon micropillars and nanopillars]
* [https://caltech.box.com/s/q42u5q46nmx2hm53szub556kwcrc0oih David Henry's thesis on dry etching in the KNI's tools]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/126/System%20Manual%20for%20Caltech%2094-219845.pdf Oxford III-V Metal Etcher System Manual] (login to LabRunr required)
* [https://caltech.box.com/s/gclvux5tu28rpssvwncx5sm518uhmebl Edwards QDP 80 dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/f8f1fx1ffz4ql71suxsvrw0p20b2inp5 Manufacturer Data Sheet]

===== System Features =====
* Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
* Variable height 240 mm Cryo RIE electrode
* Parameter ramping software (Not Bosch)
* 100-mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
* 200 mm pumping port is fitted with a 200 mm variable gate valve for chamber isolation and process pressure control
* Twelve line gas pod with three non-toxic and six toxic digital mass-flow-controlled gas lines
* Alcatel 1300 l/s MAGLEV turbo pump
* Single-wafer automatic insertion load lock with soft pump option

===== System Specifications =====
* Chamber wall heating 80 °C
* Cryo table range -140 to 400 °C
* ICP 380 mm remote high-density plasma source with 5 kW RF generator and automatic matching unit close-coupled to the source
* Substrate bias control by 30 / 300 W RIE source
* Helium back-side wafer cooling

== Related Tools ==
* [https://lab.kni.caltech.edu/ICP-RIE:_Dielectric_Etcher Oxford Dielectric ICP-RIE]
* [https://lab.kni.caltech.edu/DRIE:_Bosch_%26_Cryo_ICP-RIE_for_Silicon Oxford DRIE ICP-RIE]
* [https://lab.kni.caltech.edu/Dual_Chamber_RIE:_Silicon,_III-V_Material_%26_Organics_Etcher Plasma-Therm RIE]
* [https://lab.kni.caltech.edu/XeF2_Etcher_for_Silicon XeF2 Etcher]
* [https://lab.kni.caltech.edu/Plasma-Enhanced_Chemical_Vapor_Deposition_(PECVD) Oxford PECVD]
* [https://lab.kni.caltech.edu/FlexAL_II:_Atomic_Layer_Deposition_(ALD) Oxford ALD]

DRIE: Bosch & Cryo ICP-RIE for Silicon

2023-08-22T21:15:12Z

Kmmckenz: /* SOPs & Troubleshooting */ removed old and duplicate links

{{InstrumentInfobox|
|InstrumentName = DRIE
|HeaderColor = #FFE2B9
|ImageOne = Silicon-Microcones_Paul-A-Kempler.jpg
|ImageTwo = DRIE_Bosch-and-Cryo_ICP–RIE_.jpg
|InstrumentType = [[Equipment_List#Etching|Etching]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-5732
|Manufacturer = Oxford Instruments
|Techniques = Bosch & Cryogenic Etch of Silicon
|EmailList = kni-oxfordicp
|EmailListName = Oxford ICP
|Model = Plasmalab System 100
}}
== Description ==
The MEMS / Bosch / Cryo inductively-coupled plasma reactive-ion etch (ICP-RIE) is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for silicon etching. This system is configured for deep reactive-ion etching (DRIE) via the Bosch process, allowing silicon etching with SF6 and C4F8 gases. Close-coupled gas pods are included in this system for fast Bosch switching.
The silicon ICP-RIE has a variable temperature stage (-150 to 300 °C) to permit cryogenic etching of silicon with SF6 and O2 if needed. This system supports wafer sizes up to 6 inches and provides accurate deep etching capabilities for silicon only.
===== Applications =====
* Deep silicon etch using Bosch process
* Cryogenic etch of silicon
* pseudo-Bosch etch of silicon
===== Allowed material in DRIE =====
* Si, SixNy, Ge
* PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3 hard masks
* Buried/backside metal ok if never exposed (not an etch stop)

===== DRIE Gas List =====
* SF6
* C4F8
* O2
* Ar
* N2

== Resources ==
===== Equipment Status =====
* [https://labrunr.caltech.edu/Equipment_2.aspx LabRunr Equipment Status] (Select Oxford_DRIE from the dropdown menu)

===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/0qe85zye5mjlgqxorxa77tzgqgblv3ep General Use SOP]
* [https://caltech.box.com/s/681uz0b8zsv6ivy43a5ggsoydp5zlyza Oxfords reservation and use policy]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]

===== Process Documents =====
* [https://caltech.box.com/s/3n21r2o30u476ppnxfp657o3zbs9f0on Process Standards]
* [https://caltech.box.com/s/z3ibiol0xp1qwi6cyvnghbxs81p8j5q5 Silicon Waveguide Etch]
* [https://caltech.box.com/s/c622brbs1udx5hqc744jvdd7wtf2mw32 Bosch Si Etch]
* [https://caltech.box.com/s/v92jrijz2iijzzlnyrbzbolov7zvo3w0 High-Rate Bosch Si Etch]
* [https://caltech.box.com/s/daa9zeonjqphc8v963mi3lojo8me0u9j Cryo-Si Etch]
* [https://caltech.box.com/s/ekzldcen8pjhok0qbpdy796xvs3icae4 Isotropic Si Etch]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]
* [https://caltech.box.com/s/3b9zbdj1uoazz7zbz8png25c2ba65vas Comparison of etch rates using different sample-fixing oils]

===== Review Articles =====
* [https://caltech.box.com/s/3fnc4a7qeyr1up6kth599j7ojybka2vb Guidelines for Etching Silicon MEMS Structures]
* [https://caltech.box.com/s/j61w7vr4f8cdjr64jrnz1t37oizdhl7f Etch rates for MEMS Processing - Part I]
* [https://caltech.box.com/s/ls0jl268j4at6z39g6kv8wivevpq80eh Etch Rates for MEMS Processing - Part II]
* [https://caltech.box.com/s/cetpre7d66gssbhtaicnhtovyo6ngzjv Dry Etching of Electronic Oxides, Polymers, and Semiconductors]
* [https://caltech.box.com/s/pauf384duhejuwzfwan71eam7nkvdrxw Alumina etch masks for fabrication of high-aspect-ratio silicon micropillars and nanopillars]
* [https://caltech.box.com/s/q42u5q46nmx2hm53szub556kwcrc0oih David Henry's thesis on dry etching in the KNI's tools]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/125/LabRunr%20System%20Manual%20for%20Caltech%2094-219846.pdf Oxford Plasmalab System 100 DRIE Manual] (login to LabRunr required)
* [https://caltech.box.com/s/gclvux5tu28rpssvwncx5sm518uhmebl Edwards QDP 80 dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/85mj9roas98jtwee9d22hk0wk9un54fl Manufacturer System Configuration]
===== System Features =====
* Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
* Variable height 240 mm Cryo RIE electrode
* Parameter ramping software
* 100 mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
* 200 mm pumping port is fitted with a 200 mm variable gate valve for chamber isolation and process pressure control
* Close-coupled gas pod to ICP for two digital non-toxic mass-flow-controlled gas lines (SF6, and C4F8)
* Six line gas pod with three non-toxic digital mass-flow-controlled gas lines
* Alcatel 1300 l/s MAGLEV turbo pump
* Single-wafer automatic insertion load lock with soft pump option
* Single user license for Anisotropic Silicon Etch Process (Bosch)
===== System Specifications =====
* Chamber wall heating: 80 °C
* Cryo table range: -150 to 400 °C
* ICP 380 mm remote high-density plasma source with 8 kW RF generator and automatic matching unit close-coupled to the source
* Substrate bias control by 30 / 300W RIE source
* Helium back-side wafer cooling

== Related Tools ==
* [https://lab.kni.caltech.edu/ICP-RIE:_III-V,_Metal_%26_Silicon_Etcher Oxford III-V ICP-RIE]
* [https://lab.kni.caltech.edu/ICP-RIE:_Dielectric_Etcher Oxford Dielectric ICP-RIE]
* [https://lab.kni.caltech.edu/Dual_Chamber_RIE:_Silicon,_III-V_Material_%26_Organics_Etcher Plasma-Therm RIE]
* [https://lab.kni.caltech.edu/XeF2_Etcher_for_Silicon XeF2 Etcher]
* [https://lab.kni.caltech.edu/Plasma-Enhanced_Chemical_Vapor_Deposition_(PECVD) Oxford PECVD]
* [https://lab.kni.caltech.edu/FlexAL_II:_Atomic_Layer_Deposition_(ALD) Oxford ALD]

DRIE: Bosch & Cryo ICP-RIE for Silicon

2023-08-22T21:06:14Z

Kmmckenz: /* SOPs & Troubleshooting */ added reservation policy

{{InstrumentInfobox|
|InstrumentName = DRIE
|HeaderColor = #FFE2B9
|ImageOne = Silicon-Microcones_Paul-A-Kempler.jpg
|ImageTwo = DRIE_Bosch-and-Cryo_ICP–RIE_.jpg
|InstrumentType = [[Equipment_List#Etching|Etching]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-5732
|Manufacturer = Oxford Instruments
|Techniques = Bosch & Cryogenic Etch of Silicon
|EmailList = kni-oxfordicp
|EmailListName = Oxford ICP
|Model = Plasmalab System 100
}}
== Description ==
The MEMS / Bosch / Cryo inductively-coupled plasma reactive-ion etch (ICP-RIE) is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for silicon etching. This system is configured for deep reactive-ion etching (DRIE) via the Bosch process, allowing silicon etching with SF6 and C4F8 gases. Close-coupled gas pods are included in this system for fast Bosch switching.
The silicon ICP-RIE has a variable temperature stage (-150 to 300 °C) to permit cryogenic etching of silicon with SF6 and O2 if needed. This system supports wafer sizes up to 6 inches and provides accurate deep etching capabilities for silicon only.
===== Applications =====
* Deep silicon etch using Bosch process
* Cryogenic etch of silicon
* pseudo-Bosch etch of silicon
===== Allowed material in DRIE =====
* Si, SixNy, Ge
* PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3 hard masks
* Buried/backside metal ok if never exposed (not an etch stop)

===== DRIE Gas List =====
* SF6
* C4F8
* O2
* Ar
* N2

== Resources ==
===== Equipment Status =====
* [https://labrunr.caltech.edu/Equipment_2.aspx LabRunr Equipment Status] (Select Oxford_DRIE from the dropdown menu)

===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/0qe85zye5mjlgqxorxa77tzgqgblv3ep General Use SOP]
* [https://caltech.box.com/s/681uz0b8zsv6ivy43a5ggsoydp5zlyza Oxfords reservation and use policy]
* [https://caltech.box.com/s/vbv9di5bn1ha7tus6fq1br41533o21wu Oxford Instruments reservation policy]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]

===== Process Documents =====
* [https://caltech.box.com/s/3n21r2o30u476ppnxfp657o3zbs9f0on Process Standards]
* [https://caltech.box.com/s/z3ibiol0xp1qwi6cyvnghbxs81p8j5q5 Silicon Waveguide Etch]
* [https://caltech.box.com/s/c622brbs1udx5hqc744jvdd7wtf2mw32 Bosch Si Etch]
* [https://caltech.box.com/s/v92jrijz2iijzzlnyrbzbolov7zvo3w0 High-Rate Bosch Si Etch]
* [https://caltech.box.com/s/daa9zeonjqphc8v963mi3lojo8me0u9j Cryo-Si Etch]
* [https://caltech.box.com/s/ekzldcen8pjhok0qbpdy796xvs3icae4 Isotropic Si Etch]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]
* [https://caltech.box.com/s/3b9zbdj1uoazz7zbz8png25c2ba65vas Comparison of etch rates using different sample-fixing oils]

===== Review Articles =====
* [https://caltech.box.com/s/3fnc4a7qeyr1up6kth599j7ojybka2vb Guidelines for Etching Silicon MEMS Structures]
* [https://caltech.box.com/s/j61w7vr4f8cdjr64jrnz1t37oizdhl7f Etch rates for MEMS Processing - Part I]
* [https://caltech.box.com/s/ls0jl268j4at6z39g6kv8wivevpq80eh Etch Rates for MEMS Processing - Part II]
* [https://caltech.box.com/s/cetpre7d66gssbhtaicnhtovyo6ngzjv Dry Etching of Electronic Oxides, Polymers, and Semiconductors]
* [https://caltech.box.com/s/pauf384duhejuwzfwan71eam7nkvdrxw Alumina etch masks for fabrication of high-aspect-ratio silicon micropillars and nanopillars]
* [https://caltech.box.com/s/q42u5q46nmx2hm53szub556kwcrc0oih David Henry's thesis on dry etching in the KNI's tools]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/125/LabRunr%20System%20Manual%20for%20Caltech%2094-219846.pdf Oxford Plasmalab System 100 DRIE Manual] (login to LabRunr required)
* [https://caltech.box.com/s/gclvux5tu28rpssvwncx5sm518uhmebl Edwards QDP 80 dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/85mj9roas98jtwee9d22hk0wk9un54fl Manufacturer System Configuration]
===== System Features =====
* Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
* Variable height 240 mm Cryo RIE electrode
* Parameter ramping software
* 100 mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
* 200 mm pumping port is fitted with a 200 mm variable gate valve for chamber isolation and process pressure control
* Close-coupled gas pod to ICP for two digital non-toxic mass-flow-controlled gas lines (SF6, and C4F8)
* Six line gas pod with three non-toxic digital mass-flow-controlled gas lines
* Alcatel 1300 l/s MAGLEV turbo pump
* Single-wafer automatic insertion load lock with soft pump option
* Single user license for Anisotropic Silicon Etch Process (Bosch)
===== System Specifications =====
* Chamber wall heating: 80 °C
* Cryo table range: -150 to 400 °C
* ICP 380 mm remote high-density plasma source with 8 kW RF generator and automatic matching unit close-coupled to the source
* Substrate bias control by 30 / 300W RIE source
* Helium back-side wafer cooling

== Related Tools ==
* [https://lab.kni.caltech.edu/ICP-RIE:_III-V,_Metal_%26_Silicon_Etcher Oxford III-V ICP-RIE]
* [https://lab.kni.caltech.edu/ICP-RIE:_Dielectric_Etcher Oxford Dielectric ICP-RIE]
* [https://lab.kni.caltech.edu/Dual_Chamber_RIE:_Silicon,_III-V_Material_%26_Organics_Etcher Plasma-Therm RIE]
* [https://lab.kni.caltech.edu/XeF2_Etcher_for_Silicon XeF2 Etcher]
* [https://lab.kni.caltech.edu/Plasma-Enhanced_Chemical_Vapor_Deposition_(PECVD) Oxford PECVD]
* [https://lab.kni.caltech.edu/FlexAL_II:_Atomic_Layer_Deposition_(ALD) Oxford ALD]

Silicon Deposition: Oxford Instruments Plasmalab System 100 PECVD

2023-08-22T21:03:20Z

Kmmckenz: /* SOPs & Troubleshooting */ added reservation policy

{{InstrumentInfoboxOneImage|
|InstrumentName = PECVD
|HeaderColor = #F2682A
|ImageOne = PECVD_Oxford-System-100.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Deposition|Deposition]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-5732
|Manufacturer = Oxford Instruments
|Model = Plasmalab System 100
|Techniques = Amorphous Silicon Deposition, Silicon Dioxide Deposition, Silicon Nitride Deposition
|EmailList = kni-oxfordpecvd
|EmailListName = Oxford PECVD
}}
== Description ==
The Plasma-Enhanced Chemical Vapor Deposition (PECVD) system is an Oxford Instruments Plasma Technology Plasmalab System 100 platform that is optimized for amorphous silicon, silicon dioxide, and silicon nitride deposition. The PECVD has a variable temperature stage (RT to 600 °C). This system supports wafer sizes up to 6 inches, and provides PECVD film growth over a wide range of process conditions.
===== Applications =====
* Amorphous Silicon Deposition
* Silicon Dioxide Deposition
* Silicon Nitride Deposition
===== Allowed material in PECVD System =====
* Si, SixNy, SiO2, SOI
* Hard masks compatible with process temperature
===== PECVD Gas List =====
* 5% SiH4 in N2
* 5% SiH4 in Ar
* NH3
* N2O
* N2
* Mixture of CF4 and O2 (4:1) for Plasma Clean

== Resources ==

===== Equipment Status =====
* [https://labrunr.caltech.edu/Equipment_2.aspx LabRunr Equipment Status] (Select Oxford_PECVD from the dropdown menu)

===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/c8qx3ikzjb05x44o4updpqs36ra39ytw KNI SOP]
* [https://caltech.box.com/s/0gh89zgxkchj8nkbl1bbrdgvspu31obc Oxfords reservation and use policy]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]

===== Process Documents =====
* [https://caltech.box.com/s/qnxzioeoudzbnow9aopguf9xkysxsey3 KNI's Amorphous Silicon recipe]
* [https://caltech.box.com/s/gy10uau7tikhvhakgpjvlzalb7boavbv KNI's 350C SiO2 recipe]
* [https://caltech.box.com/s/0e14n82o7o9yziqmlygkakfcv1lp65iu Process Standards]
* [https://caltech.box.com/s/6b2ivuuguflqjaqby5werlcslmmudryf High rate SiOx]
* [https://caltech.box.com/s/vi6vb1nz8thm3sflt5ncoyhi62tomi82 High rate SiNx]
* [https://caltech.box.com/s/tc4j0yr2jazv0rd6ey22ri8jd1asl326 Low Rate SiOx]
* [https://caltech.box.com/s/r3socf5rslp7qs9rb5o7vvpyp12qf0ps Low rate SiNx]
* [https://caltech.box.com/s/6acyh95hslt0q711makbllgqjrexpew1 Amorphous Silicon Deposition (Silane/helium)]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/116/System%20Manual%20for%20Caltech%2094-219848.pdf Oxford PECVD System Manual]
* [https://caltech.box.com/s/zqfonyv64m2m76mo8b4xn63ljz9ee4i5 Alcatel ADS 602P dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/kvgp7d7zx9gczapf7iun791m234vevod Manufacturer Data Sheet]
===== System Features =====
* Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* PECVD process chamber with 160 mm pumping port, view port, and an additional rear port for optical emission end-point-detection
* Heated upper electrode to prevent condensation of low vapor pressure precursors
* PECVD 205 mm electrically heated (700 °C) lower electrode with central wafer lift mechanism
* Parameter ramping software
* 5 Torr capacitance manometer for process control, and penning for base pressure measurement
* Process chamber pumping with 63 mm branch to APC, and isolation valve; chamber base pressure turbo, backed by a refurbished dry pump with roots
* Twelve line gas pod with two non-toxic and three toxic digital mass-flow-controlled gas lines and cleaning gas
* Chamber Gas ring, with split gas manifold
* Liquid vapor delivery system
* Single-wafer automatic insertion load lock with soft pump option
===== System Specifications =====
* Chamber wall heating 80 °C
* 30/300 W RF generator close-coupled to the upper electrode through an automatic matching unit; the generator is configured to operate in a low-power mode (0-30 W) for higher accuracy during low-rate deposition processes
* 600 W solid-state 50-460 kHz LF generator

== Related Instrumentation in the KNI ==
===== Sputtering Systems =====
* [[ATC Orion 8: Dielectric Sputter System|ATC Orion 8: Dielectric Sputter System]]
* [[ATC Orion 8: Chalcogenide Sputter System|ATC Orion 8: Chalcogenide Sputter System]]

===== Electron Beam Evaporation Systems =====
* [[Labline: Electron Beam Evaporator|Labline: Electron Beam Evaporator]]
* [[CHA: Electron Beam Evaporator|CHA: Electron Beam Evaporator]]

===== Chemical Vapor Deposition =====
* [[FlexAL II: Atomic Layer Deposition (ALD)|FlexAL II: Atomic Layer Deposition (ALD)]]
* [[Plasma-Enhanced Chemical Vapor Deposition (PECVD)|Plasma-Enhanced Chemical Vapor Deposition (PECVD)]]

FlexAL II: Atomic Layer Deposition (ALD)

2023-08-22T21:02:08Z

Kmmckenz: /* SOPs & Troubleshooting */ added reservation policy

{{InstrumentInfoboxOneImage|
|InstrumentName = Atomic Layer Deposition (ALD)
|HeaderColor = #F2682A
|ImageOne = FlexAL-II-ALD.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Deposition|Deposition]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-5732
|Manufacturer = Oxford Instruments
|Techniques = Atomic Layer Deposition of Oxides and Nitrides
|EmailList = kni-ald
|EmailListName = Oxford FlexAl ALD
|Model = FlexAL II
}}
== Description ==
The Atomic Layer Deposition (ALD) system is an Oxford Instruments Plasma Technology FlexAL II platform that is designed to grow thin films one atomic layer at a time under very precise deposition conditions. It is configured with a 240 mm diameter resistance-heated, RF-biased aluminum electrode with temperature control to 600 °C, and substrate sizes up to 6 inches (150 mm), with optional configuration for 8 inches (200 mm). There is an inductively-coupled plasma (ICP) source for plasma-enhanced ALD, as well as the more traditional thermal processes, with six precursor gases to grow a variety of high-purity oxides and nitrides.

Some film examples by KNI lab members include thermally-grown conductive TiO2 as protective coatings for semiconducting photoanodes in water-splitting cells, thermal and plasma-assisted Al2O3 and HfO2 as gate dielectrics in 2D transition metal dichalcogenide materials, as well as NbN and TiN deposition.

===== Applications =====
* Aluminum oxide and nitride deposition
* Silicon dioxide and nitride deposition
* Titanium oxide and nitride deposition
* Hafnium oxide deposition
* Niobium oxide and nitride deposition
* Deposition of other films can be made available upon request

===== Allowed material in ALD System =====
* Si, SixNy, SiO2, SOI
* Hard masks compatible with process temperature

===== ALD Gas List (links to SDS) =====
* [https://caltech.box.com/s/4ydr6ju2pbvulef7e0vzlb8i58nijkrg SF6]
* [https://caltech.box.com/s/s3oi147iafil7ruil2dwgw5kxn9je2a5 N2]
* [https://caltech.box.com/s/sar0sdkzrjyvzh63gww199558297rzaj O2]
* [https://caltech.box.com/s/f08m19vgz2sir41vzqdkql4wcpcsc7nz O3]
* [https://caltech.box.com/s/g4r8qnbmn4gfdly1knni5rhnubpuq0zv NH3]
* [https://caltech.box.com/s/f6080rhdsuu8mblne62c02oapl7319cg H2]
* [https://caltech.box.com/s/djtj0j1671dvo6to8x0t56g2b8ekvmrz Ar]

===== ALD Precursor List (Links to SDS) =====
* [https://caltech.box.com/s/hff83jq4x96new2sgczzvwgacy7tsl0e TMA (aluminum)]
* [https://caltech.box.com/s/pkjuqifvnzle2eanykhvhe4m8hu6qgye TDMAT (titanium)]
* [https://caltech.box.com/s/jurskhuqjxhpnmtl5iwfmgpj8d3apmy3 BTBAS (silicon)]
* BDEAS (silicon) (SDS coming soon)
* [https://caltech.box.com/s/6zdhb6n1yr78wgy9mtjzqkljo75vxb75 TDMAH (hafnium)]
* [https://caltech.box.com/s/pznx6n00avfmmp47h3esqkkc7hsrw04d TBTDEN (niobium)]
* Others upon request

== Resources ==
===== Equipment Status =====
* [https://labrunr.caltech.edu/Equipment_2.aspx LabRunr Equipment Status] (Select ALD from the dropdown menu)

===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/97mn2fyncejg6d4uo5lwtyl98w8n9gd2 KNI ALD SOP]
* [https://caltech.box.com/s/0gh89zgxkchj8nkbl1bbrdgvspu31obc Oxfords reservation and use policy]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]

===== Process Documents (login to LabRunr required)=====
* [https://labrunr.caltech.edu/machinefiles/154/Oxford%20Instruments%20ALD%20Materials%20Example%20Guide%20-%202017-10-25.pdf Oxford Instruments ALD Materials Example Guide]
* [https://labrunr.caltech.edu/machinefiles/154/OxfordInstruments%20ALD%20-%20gases%20and%20precursors.pdf Oxford Instruments ALD gases and precursors]
* [https://labrunr.caltech.edu/machinefiles/154/CalTech_Process_Visit_Report_Final.pdf Oxford Instruments ALD Process Acceptance report]
* [https://labrunr.caltech.edu/machinefiles/154/process%20infor%20for%20Caltech_v2.pdf Oxford Instruments ALD Process Information guidance]
* [https://labrunr.caltech.edu/machinefiles/154/ALD%20Bias%20Control%20Oxford%20Instruments.pdf Oxford Instruments ALD Bias Control]

===== Process Resources =====
* [https://caltech.box.com/s/rw25s9zzka0adhgclxr9ppxpoyduanx7 Aluminum Nitride (AlN)]
* [https://caltech.box.com/s/o0lmo99pz3p4cjihmytmvqbvmq5pr1yg Aluminum Oxide (Al2O3)]
* [https://caltech.box.com/s/gvmfu3np83ehfwub7ebuuajyia52thv0 Hafnium Oxide (HfO2)]
* [https://caltech.box.com/s/h7x9a3i8uj55hbahpam9fzni967fjnkp Silicon Nitride (Si3N4)]
* [https://caltech.box.com/s/zaloyrsabapa5b7pvnjxglsgfjeux1zx Titanium Nitride (TiN)]
* [https://caltech.box.com/s/knpefm73sdjsnd7zmo78mr6h273eyx2n Titanium Oxide (TiO2)]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/154/FlexAL_II_IDS_EN_10.pdf Oxford FlexAL ALD System manual] (login to LabRunr)
* [https://caltech.box.com/s/tgypp7gvwxtk8um4pmybietd29fj7htj Adixen 4 Series Multistage Roots dry pumps brochure]
* [https://caltech.box.com/s/eubo1b949weunxvwkti50jhi7nuh7mgb NovaSafe exhaust abatement system manual]
* [https://labrunr.caltech.edu/machinefiles/154/OzoneDel_MAN_EN_1A.PDF Oxford Ozone Delivery module manual] (login to LabRunr)
* [https://caltech.box.com/s/8n7k2wiwqzxlpt32uaj2rwvf7maqu9xl Oxford FlexAl system drawings] (login to LabRunr)

== Specifications ==
===== System Features =====
* FlexAL ALD Process Module
* The chamber is electrically heated to 150 °C
* Two ports at 70° angle from normal for ellipsometry and an additional port for analytical equipment such as RGA
* Precursor Multi-Bubbler Cabinet 6 Way
* Standard Gas Pod externally mounted (8 lines max)
* 4 each Standard gasline and MFC for non-toxic gases
* 3 each By-passed gasline and MFC for toxic gases
* Ozone delivery system for ALD with up to 22% w/w ozone concentration
* Chamber turbo pump Pfeiffer/Adixen ATH500M, ISO200 pipework, APC & heated backing valve kit
* Chamber process pump Pfeiffer/Adixen A604H kit
* FlexAL compact single wafer load lock kit
* Load Lock dry pump kit
* PC & 19" monitor
===== System Specifications =====
* ICP 65 plasma source with 600 W 13.56 MHz RF Generator & AMU
* ALD 600 °C biasable Inconel electrode
* Heated 250 mTorr high resolution temperature compensated capacitance manometer
* ALD 100 mm pumping pipework plus 100 mm fast APC
* Process Acceptance criteria for thermal and plasma Al2O3 and TiO2

== Related Instrumentation in the KNI ==
===== Sputtering Systems =====
* [[ATC Orion 8: Dielectric Sputter System|ATC Orion 8: Dielectric Sputter System]]
* [[ATC Orion 8: Chalcogenide Sputter System|ATC Orion 8: Chalcogenide Sputter System]]

===== Electron Beam Evaporation Systems =====
* [[Labline: Electron Beam Evaporator|Labline: Electron Beam Evaporator]]
* [[CHA: Electron Beam Evaporator|CHA: Electron Beam Evaporator]]

===== Chemical Vapor Deposition =====
* [[FlexAL II: Atomic Layer Deposition (ALD)|FlexAL II: Atomic Layer Deposition (ALD)]]
* [[Plasma-Enhanced Chemical Vapor Deposition (PECVD)|Plasma-Enhanced Chemical Vapor Deposition (PECVD)]]

Tube Furnaces for Wet & Dry Processing

2023-04-24T23:45:48Z

Kmmckenz: /* Allowed Materials */ added SiNx

{{InstrumentInfoboxOneImage|
|InstrumentName = Tystar Tytan Tube Furnaces 1 & 2
|HeaderColor = #E6E7E8
|ImageOne = Tystar-Tytan-Tube-Furnaces.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Support_Tools|Support Tools]], [[Equipment_List#Thermal_Processing|Thermal Processing]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-5732
|Manufacturer = Tystar Corporation
|Model = Tytan Horizontal Diffusion Furnace
|Techniques = Oxidation, Annealing
|EmailList = kni-tystar
|EmailListName = Tystar
}}
== Description ==
The system is designed for processing up to one-hundred, 150 mm (6") silicon or sapphire wafers per tube and can accommodate smaller sample sizes also. Tube 1 is designated for wet & dry oxidation using a flask evaporator. Tube 2 is designated for dry oxidation and annealing.
===== Applications =====
* Dry & Wet oxidation
* Annealing
===== Allowed Materials =====
* Silicon, SiNx, or sapphire that is completely free of metal or organic contamination
** Recommended to have undergone a standard RCA clean or similar beforehand
* No other sample material allowed
* No metal or organic contamination
** Wafers must not have been contacted by metal tweezers, etc. without appropriate cleaning to remove metal contamination

===== Gas List =====
* Nitrogen
* Oxygen
* Water Vapor (Tube 1)
== Resources ==
===== Equipment Status =====
* [https://labrunr.caltech.edu/Equipment_2.aspx LabRunr Equipment Status] (Select Furnace1 or Furnace2 from the dropdown menu)

===== Tystar Oxidation Recipe =====
* [https://caltech.box.com/s/nqiiqwlhip4dcult2mtuvvdlxw0gv086 Wet Oxidation 1000C ]
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/yrvj5tar3r2e2ldq9orm2bh5mlkavw05 KNI SOP ]

DRIE: Bosch & Cryo ICP-RIE for Silicon

2023-04-24T23:11:06Z

Kmmckenz: /* Allowed material in DRIE */ removed SiO2 from allowed etch materials

{{InstrumentInfobox|
|InstrumentName = DRIE
|HeaderColor = #FFE2B9
|ImageOne = Silicon-Microcones_Paul-A-Kempler.jpg
|ImageTwo = DRIE_Bosch-and-Cryo_ICP–RIE_.jpg
|InstrumentType = [[Equipment_List#Etching|Etching]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-5732
|Manufacturer = Oxford Instruments
|Techniques = Bosch & Cryogenic Etch of Silicon
|EmailList = kni-oxfordicp
|EmailListName = Oxford ICP
|Model = Plasmalab System 100
}}
== Description ==
The MEMS / Bosch / Cryo inductively-coupled plasma reactive-ion etch (ICP-RIE) is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for silicon etching. This system is configured for deep reactive-ion etching (DRIE) via the Bosch process, allowing silicon etching with SF6 and C4F8 gases. Close-coupled gas pods are included in this system for fast Bosch switching.
The silicon ICP-RIE has a variable temperature stage (-150 to 300 °C) to permit cryogenic etching of silicon with SF6 and O2 if needed. This system supports wafer sizes up to 6 inches and provides accurate deep etching capabilities for silicon only.
===== Applications =====
* Deep silicon etch using Bosch process
* Cryogenic etch of silicon
* pseudo-Bosch etch of silicon
===== Allowed material in DRIE =====
* Si, SixNy, Ge
* PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3 hard masks
* Buried/backside metal ok if never exposed (not an etch stop)

===== DRIE Gas List =====
* SF6
* C4F8
* O2
* Ar
* N2

== Resources ==
===== Equipment Status =====
* [https://labrunr.caltech.edu/Equipment_2.aspx LabRunr Equipment Status] (Select Oxford_DRIE from the dropdown menu)

===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/0qe85zye5mjlgqxorxa77tzgqgblv3ep General Use SOP]
* [https://caltech.box.com/s/vbv9di5bn1ha7tus6fq1br41533o21wu Oxford Instruments reservation policy]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]

===== Process Documents =====
* [https://caltech.box.com/s/3n21r2o30u476ppnxfp657o3zbs9f0on Process Standards]
* [https://caltech.box.com/s/z3ibiol0xp1qwi6cyvnghbxs81p8j5q5 Silicon Waveguide Etch]
* [https://caltech.box.com/s/c622brbs1udx5hqc744jvdd7wtf2mw32 Bosch Si Etch]
* [https://caltech.box.com/s/v92jrijz2iijzzlnyrbzbolov7zvo3w0 High-Rate Bosch Si Etch]
* [https://caltech.box.com/s/daa9zeonjqphc8v963mi3lojo8me0u9j Cryo-Si Etch]
* [https://caltech.box.com/s/ekzldcen8pjhok0qbpdy796xvs3icae4 Isotropic Si Etch]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]
* [https://caltech.box.com/s/3b9zbdj1uoazz7zbz8png25c2ba65vas Comparison of etch rates using different sample-fixing oils]

===== Review Articles =====
* [https://caltech.box.com/s/3fnc4a7qeyr1up6kth599j7ojybka2vb Guidelines for Etching Silicon MEMS Structures]
* [https://caltech.box.com/s/j61w7vr4f8cdjr64jrnz1t37oizdhl7f Etch rates for MEMS Processing - Part I]
* [https://caltech.box.com/s/ls0jl268j4at6z39g6kv8wivevpq80eh Etch Rates for MEMS Processing - Part II]
* [https://caltech.box.com/s/cetpre7d66gssbhtaicnhtovyo6ngzjv Dry Etching of Electronic Oxides, Polymers, and Semiconductors]
* [https://caltech.box.com/s/pauf384duhejuwzfwan71eam7nkvdrxw Alumina etch masks for fabrication of high-aspect-ratio silicon micropillars and nanopillars]
* [https://caltech.box.com/s/q42u5q46nmx2hm53szub556kwcrc0oih David Henry's thesis on dry etching in the KNI's tools]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/125/LabRunr%20System%20Manual%20for%20Caltech%2094-219846.pdf Oxford Plasmalab System 100 DRIE Manual] (login to LabRunr required)
* [https://caltech.box.com/s/gclvux5tu28rpssvwncx5sm518uhmebl Edwards QDP 80 dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/85mj9roas98jtwee9d22hk0wk9un54fl Manufacturer System Configuration]
===== System Features =====
* Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
* Variable height 240 mm Cryo RIE electrode
* Parameter ramping software
* 100 mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
* 200 mm pumping port is fitted with a 200 mm variable gate valve for chamber isolation and process pressure control
* Close-coupled gas pod to ICP for two digital non-toxic mass-flow-controlled gas lines (SF6, and C4F8)
* Six line gas pod with three non-toxic digital mass-flow-controlled gas lines
* Alcatel 1300 l/s MAGLEV turbo pump
* Single-wafer automatic insertion load lock with soft pump option
* Single user license for Anisotropic Silicon Etch Process (Bosch)
===== System Specifications =====
* Chamber wall heating: 80 °C
* Cryo table range: -150 to 400 °C
* ICP 380 mm remote high-density plasma source with 8 kW RF generator and automatic matching unit close-coupled to the source
* Substrate bias control by 30 / 300W RIE source
* Helium back-side wafer cooling

== Related Tools ==
* [https://lab.kni.caltech.edu/ICP-RIE:_III-V,_Metal_%26_Silicon_Etcher Oxford III-V ICP-RIE]
* [https://lab.kni.caltech.edu/ICP-RIE:_Dielectric_Etcher Oxford Dielectric ICP-RIE]
* [https://lab.kni.caltech.edu/Dual_Chamber_RIE:_Silicon,_III-V_Material_%26_Organics_Etcher Plasma-Therm RIE]
* [https://lab.kni.caltech.edu/XeF2_Etcher_for_Silicon XeF2 Etcher]
* [https://lab.kni.caltech.edu/Plasma-Enhanced_Chemical_Vapor_Deposition_(PECVD) Oxford PECVD]
* [https://lab.kni.caltech.edu/FlexAL_II:_Atomic_Layer_Deposition_(ALD) Oxford ALD]

Kelly McKenzie

2023-02-21T21:33:23Z

Kmmckenz: /* Managed Equipment */ removed plasma cleaner and XeF2 etcher

__NOTOC__
{{StaffMemberInfobox
|StaffName = Kelly McKenzie
|StaffPhoto = McKenzie_Kelly_2.jpg
|JobTitle = Plasma Process Engineer
|AreasResponsibility = Etch and Deposition
|CaltechID = kmmckenz
|Phone = 626-395-5732 (office)
|OfficeLocation = 130 Steele
}}
== About ==
===== Role in the KNI =====

Kelly (they/them) is the Plasma Process Engineer for the Kavli Nanoscience Institute (KNI) at the California Institute of Technology. Kelly manages the KNI's suite of plasma etch and chemical vapor deposition systems, as well as the tools for wet and dry oxidation and annealing. In their roll, Kelly maintains equipment, trains researchers in equipment operation, and provides technical support for helping users carry out their projects' objectives.

Kelly joined Caltech in 2017 as a graduate student in the Atwater research group in the Applied Physics & Materials Science department where they completed their master's. They returned in July 2021 as the laboratory technician for the KNI.

===== Education =====

Kelly received their M.S. in Materials Science from Caltech and B.S. degrees in Electrical Engineering and in Physics from the University of Arkansas at Fayetteville.

===== Managed Equipment =====

Chemical Vapor Deposition (CVD)
* [[FlexAL II: Atomic Layer Deposition (ALD) | Atomic Layer Deposition (ALD): Oxford Instruments FlexAL II]]
* [[Plasma-Enhanced Chemical Vapor Deposition (PECVD) | Plasma-Enhanced Chemical Vapor Deposition (PECVD): Oxford Instruments System 100]]

Dry Etching
* [[DRIE: Bosch & Cryo ICP-RIE for Silicon | Silicon Etcher: Oxford Instruments DRIE System 100 Bosch & Cryo ICP-RIE]]
* [[ICP-RIE: III-V, Metal & Silicon Etcher | III-V Material, Metal & Silicon Etcher: Oxford Instruments System 100 ICP-RIE]]
* [[ICP-RIE: Dielectric Etcher | Dielectric Material Etcher: Oxford Instruments Dielectric System 100 ICP-RIE]]
* [[Dual Chamber RIE: Silicon, III-V Material & Organics Etcher | Silicon, III-V Material & Organics Etcher: Plasma-Therm Dual Chamber RIE]]

Thermal Processing
* [[Tube Furnaces for Wet & Dry Processing | Tube Furnaces: Tystar Tytan 1 & 2 (Wet & Dry Oxidation and Annealing)]]

Kelly McKenzie

2023-02-21T21:31:07Z

Kmmckenz: /* Education */ updated pronouns

__NOTOC__
{{StaffMemberInfobox
|StaffName = Kelly McKenzie
|StaffPhoto = McKenzie_Kelly_2.jpg
|JobTitle = Plasma Process Engineer
|AreasResponsibility = Etch and Deposition
|CaltechID = kmmckenz
|Phone = 626-395-5732 (office)
|OfficeLocation = 130 Steele
}}
== About ==
===== Role in the KNI =====

Kelly (they/them) is the Plasma Process Engineer for the Kavli Nanoscience Institute (KNI) at the California Institute of Technology. Kelly manages the KNI's suite of plasma etch and chemical vapor deposition systems, as well as the tools for wet and dry oxidation and annealing. In their roll, Kelly maintains equipment, trains researchers in equipment operation, and provides technical support for helping users carry out their projects' objectives.

Kelly joined Caltech in 2017 as a graduate student in the Atwater research group in the Applied Physics & Materials Science department where they completed their master's. They returned in July 2021 as the laboratory technician for the KNI.

===== Education =====

Kelly received their M.S. in Materials Science from Caltech and B.S. degrees in Electrical Engineering and in Physics from the University of Arkansas at Fayetteville.

===== Managed Equipment =====

Chemical Vapor Deposition (CVD)
* [[FlexAL II: Atomic Layer Deposition (ALD) | Atomic Layer Deposition (ALD): Oxford Instruments FlexAL II]]
* [[Plasma-Enhanced Chemical Vapor Deposition (PECVD) | Plasma-Enhanced Chemical Vapor Deposition (PECVD): Oxford Instruments System 100]]

Dry Etching
* [[DRIE: Bosch & Cryo ICP-RIE for Silicon | Silicon Etcher: Oxford Instruments DRIE System 100 Bosch & Cryo ICP-RIE]]
* [[ICP-RIE: III-V, Metal & Silicon Etcher | III-V Material, Metal & Silicon Etcher: Oxford Instruments System 100 ICP-RIE]]
* [[ICP-RIE: Dielectric Etcher | Dielectric Material Etcher: Oxford Instruments Dielectric System 100 ICP-RIE]]
* [[Dual Chamber RIE: Silicon, III-V Material & Organics Etcher | Silicon, III-V Material & Organics Etcher: Plasma-Therm Dual Chamber RIE]]
* [[Tergeo Plus ICP- & CCP-RIE: Oxygen & Argon Plasma Cleaner | Oxygen & Argon Plasma Cleaner: PIE Scientific Tergeo Plus ICP- & CCP-RIE]]
* [[XeF2 Etcher for Silicon | XeF2 Etcher for Silicon]]

Thermal Processing
* [[Tube Furnaces for Wet & Dry Processing | Tube Furnaces: Tystar Tytan 1 & 2 (Wet & Dry Oxidation and Annealing)]]

Kelly McKenzie

2023-02-21T21:30:19Z

Kmmckenz: /* Role in the KNI */ updated pronouns

__NOTOC__
{{StaffMemberInfobox
|StaffName = Kelly McKenzie
|StaffPhoto = McKenzie_Kelly_2.jpg
|JobTitle = Plasma Process Engineer
|AreasResponsibility = Etch and Deposition
|CaltechID = kmmckenz
|Phone = 626-395-5732 (office)
|OfficeLocation = 130 Steele
}}
== About ==
===== Role in the KNI =====

Kelly (they/them) is the Plasma Process Engineer for the Kavli Nanoscience Institute (KNI) at the California Institute of Technology. Kelly manages the KNI's suite of plasma etch and chemical vapor deposition systems, as well as the tools for wet and dry oxidation and annealing. In their roll, Kelly maintains equipment, trains researchers in equipment operation, and provides technical support for helping users carry out their projects' objectives.

Kelly joined Caltech in 2017 as a graduate student in the Atwater research group in the Applied Physics & Materials Science department where they completed their master's. They returned in July 2021 as the laboratory technician for the KNI.

===== Education =====

Kelly received her M.S. in Materials Science from Caltech and B.S. degrees in Electrical Engineering and in Physics from the University of Arkansas at Fayetteville.

===== Managed Equipment =====

Chemical Vapor Deposition (CVD)
* [[FlexAL II: Atomic Layer Deposition (ALD) | Atomic Layer Deposition (ALD): Oxford Instruments FlexAL II]]
* [[Plasma-Enhanced Chemical Vapor Deposition (PECVD) | Plasma-Enhanced Chemical Vapor Deposition (PECVD): Oxford Instruments System 100]]

Dry Etching
* [[DRIE: Bosch & Cryo ICP-RIE for Silicon | Silicon Etcher: Oxford Instruments DRIE System 100 Bosch & Cryo ICP-RIE]]
* [[ICP-RIE: III-V, Metal & Silicon Etcher | III-V Material, Metal & Silicon Etcher: Oxford Instruments System 100 ICP-RIE]]
* [[ICP-RIE: Dielectric Etcher | Dielectric Material Etcher: Oxford Instruments Dielectric System 100 ICP-RIE]]
* [[Dual Chamber RIE: Silicon, III-V Material & Organics Etcher | Silicon, III-V Material & Organics Etcher: Plasma-Therm Dual Chamber RIE]]
* [[Tergeo Plus ICP- & CCP-RIE: Oxygen & Argon Plasma Cleaner | Oxygen & Argon Plasma Cleaner: PIE Scientific Tergeo Plus ICP- & CCP-RIE]]
* [[XeF2 Etcher for Silicon | XeF2 Etcher for Silicon]]

Thermal Processing
* [[Tube Furnaces for Wet & Dry Processing | Tube Furnaces: Tystar Tytan 1 & 2 (Wet & Dry Oxidation and Annealing)]]

Light Microscope with Spectroscopic Reflectometer

2022-06-07T22:11:52Z

Kmmckenz:

{{InstrumentInfoboxOneImage|
|InstrumentName = Light Microscope with Reflectometry
|HeaderColor = #F5A81C
|ImageOne = Olympus-BX51M-with-Filmetrics-F40.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Optical Characterization|Optical Characterization]]
|RoomLocation = B217 Steele
|LabPhone = 626-395-1535
|PrimaryStaff = [[Bert Mendoza]]
|StaffEmail = bertm@caltech.edu
|StaffPhone = 626-395-4075
|Manufacturer = Olympus / Filmetrics
|Model = BX51M / F40
|Techniques = Optical Microscopy, Spectroscopic Reflectometry
|EmailList = kni-metrology
|EmailListName = Metrology
}}
== Description ==
This light microscope (Olympus BX51M) can be used to observe patterns and samples optically via 5x, 10x, 50x and 100x objective lenses. It also is equipped with a spectroscopic reflectometer (Filmetrics model F40) that can measure the thickness of transparent and translucent thin films. Spectroscopic reflectometry works by comparing the spectral amplitude and periodicity of light that is reflected at normal incidence from a thin film against the light that is reflected from a known reference sample; the results are fit to a mathematical model that takes into account estimated values for ''n'' (refractive index), ''k'' (absorption coefficient), and thickness.

===== Applications =====
* Optical imaging
* Thickness determinations

== Resources ==
===== SOP =====
* [https://caltech.app.box.com/file/967699756432 KNI SOP]

===== Manufacturer Manuals =====
* [https://caltech.app.box.com/file/967699704785 Microscope Manual]
* [https://caltech.app.box.com/file/953578875131?s=2gqm0ucq8t5rjkzixg0x0y4bo0d643pf Filmetrics Manual]

== Specifications ==
* Objective Lenses: 5x, 10x, 50x, 100x
* Optical Image Modes: Bright Field, Dark Field
* Thickness Range: 20 nm to 40 μm
* Wavelength Range: 400 to 850 nm

FlexAL II: Atomic Layer Deposition (ALD)

2022-04-28T19:36:22Z

Kmmckenz: Added to precursor list: BDEAS (silicon) (SDS coming soon)

{{InstrumentInfoboxOneImage|
|InstrumentName = Atomic Layer Deposition (ALD)
|HeaderColor = #F2682A
|ImageOne = FlexAL-II-ALD.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Deposition|Deposition]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-5732
|Manufacturer = Oxford Instruments
|Techniques = Atomic Layer Deposition of Oxides and Nitrides
|EmailList = kni-ald
|EmailListName = Oxford FlexAl ALD
|Model = FlexAL II
}}
== Description ==
The Atomic Layer Deposition (ALD) system is an Oxford Instruments Plasma Technology FlexAL II platform that is designed to grow thin films one atomic layer at a time under very precise deposition conditions. It is configured with a 240 mm diameter resistance-heated, RF-biased aluminum electrode with temperature control to 600 °C, and substrate sizes up to 6 inches (150 mm), with optional configuration for 8 inches (200 mm). There is an inductively-coupled plasma (ICP) source for plasma-enhanced ALD, as well as the more traditional thermal processes, with six precursor gases to grow a variety of high-purity oxides and nitrides.

Some film examples by KNI lab members include thermally-grown conductive TiO2 as protective coatings for semiconducting photoanodes in water-splitting cells, thermal and plasma-assisted Al2O3 and HfO2 as gate dielectrics in 2D transition metal dichalcogenide materials, as well as NbN and TiN deposition.

===== Applications =====
* Aluminum oxide and nitride deposition
* Silicon dioxide and nitride deposition
* Titanium oxide and nitride deposition
* Hafnium oxide deposition
* Niobium oxide and nitride deposition
* Deposition of other films can be made available upon request

===== Allowed material in ALD System =====
* Si, SixNy, SiO2, SOI
* Hard masks compatible with process temperature

===== ALD Gas List (links to SDS) =====
* [https://caltech.box.com/s/4ydr6ju2pbvulef7e0vzlb8i58nijkrg SF6]
* [https://caltech.box.com/s/s3oi147iafil7ruil2dwgw5kxn9je2a5 N2]
* [https://caltech.box.com/s/sar0sdkzrjyvzh63gww199558297rzaj O2]
* [https://caltech.box.com/s/f08m19vgz2sir41vzqdkql4wcpcsc7nz O3]
* [https://caltech.box.com/s/g4r8qnbmn4gfdly1knni5rhnubpuq0zv NH3]
* [https://caltech.box.com/s/f6080rhdsuu8mblne62c02oapl7319cg H2]
* [https://caltech.box.com/s/djtj0j1671dvo6to8x0t56g2b8ekvmrz Ar]

===== ALD Precursor List (Links to SDS) =====
* [https://caltech.box.com/s/hff83jq4x96new2sgczzvwgacy7tsl0e TMA (aluminum)]
* [https://caltech.box.com/s/pkjuqifvnzle2eanykhvhe4m8hu6qgye TDMAT (titanium)]
* [https://caltech.box.com/s/jurskhuqjxhpnmtl5iwfmgpj8d3apmy3 BTBAS (silicon)]
* BDEAS (silicon) (SDS coming soon)
* [https://caltech.box.com/s/6zdhb6n1yr78wgy9mtjzqkljo75vxb75 TDMAH (hafnium)]
* [https://caltech.box.com/s/pznx6n00avfmmp47h3esqkkc7hsrw04d TBTDEN (niobium)]
* Others upon request

== Resources ==
===== Equipment Data =====
* [https://caltech.box.com/s/lul90odaqj4rp9inb6qt2mft2ean0qqa Deposition Pass-down equipment information]
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/97mn2fyncejg6d4uo5lwtyl98w8n9gd2 KNI SOP]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]

===== Process Documents (login to LabRunr required)=====
* [https://labrunr.caltech.edu/machinefiles/154/Oxford%20Instruments%20ALD%20Materials%20Example%20Guide%20-%202017-10-25.pdf Oxford Instruments ALD Materials Example Guide]
* [https://labrunr.caltech.edu/machinefiles/154/OxfordInstruments%20ALD%20-%20gases%20and%20precursors.pdf Oxford Instruments ALD gases and precursors]
* [https://labrunr.caltech.edu/machinefiles/154/CalTech_Process_Visit_Report_Final.pdf Oxford Instruments ALD Process Acceptance report]
* [https://labrunr.caltech.edu/machinefiles/154/process%20infor%20for%20Caltech_v2.pdf Oxford Instruments ALD Process Information guidance]
* [https://labrunr.caltech.edu/machinefiles/154/ALD%20Bias%20Control%20Oxford%20Instruments.pdf Oxford Instruments ALD Bias Control]

===== Process Resources =====
* [https://caltech.box.com/s/rw25s9zzka0adhgclxr9ppxpoyduanx7 Aluminum Nitride (AlN)]
* [https://caltech.box.com/s/o0lmo99pz3p4cjihmytmvqbvmq5pr1yg Aluminum Oxide (Al2O3)]
* [https://caltech.box.com/s/gvmfu3np83ehfwub7ebuuajyia52thv0 Hafnium Oxide (HfO2)]
* [https://caltech.box.com/s/h7x9a3i8uj55hbahpam9fzni967fjnkp Silicon Nitride (Si3N4)]
* [https://caltech.box.com/s/zaloyrsabapa5b7pvnjxglsgfjeux1zx Titanium Nitride (TiN)]
* [https://caltech.box.com/s/knpefm73sdjsnd7zmo78mr6h273eyx2n Titanium Oxide (TiO2)]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/154/FlexAL_II_IDS_EN_10.pdf Oxford FlexAL ALD System manual] (login to LabRunr)
* [https://caltech.box.com/s/tgypp7gvwxtk8um4pmybietd29fj7htj Adixen 4 Series Multistage Roots dry pumps brochure]
* [https://caltech.box.com/s/eubo1b949weunxvwkti50jhi7nuh7mgb NovaSafe exhaust abatement system manual]
* [https://labrunr.caltech.edu/machinefiles/154/OzoneDel_MAN_EN_1A.PDF Oxford Ozone Delivery module manual] (login to LabRunr)
* [https://caltech.box.com/s/8n7k2wiwqzxlpt32uaj2rwvf7maqu9xl Oxford FlexAl system drawings] (login to LabRunr)

== Specifications ==
===== System Features =====
* FlexAL ALD Process Module
* The chamber is electrically heated to 150 °C
* Two ports at 70° angle from normal for ellipsometry and an additional port for analytical equipment such as RGA
* Precursor Multi-Bubbler Cabinet 6 Way
* Standard Gas Pod externally mounted (8 lines max)
* 4 each Standard gasline and MFC for non-toxic gases
* 3 each By-passed gasline and MFC for toxic gases
* Ozone delivery system for ALD with up to 22% w/w ozone concentration
* Chamber turbo pump Pfeiffer/Adixen ATH500M, ISO200 pipework, APC & heated backing valve kit
* Chamber process pump Pfeiffer/Adixen A604H kit
* FlexAL compact single wafer load lock kit
* Load Lock dry pump kit
* PC & 19" monitor
===== System Specifications =====
* ICP 65 plasma source with 600 W 13.56 MHz RF Generator & AMU
* ALD 600 °C biasable Inconel electrode
* Heated 250 mTorr high resolution temperature compensated capacitance manometer
* ALD 100 mm pumping pipework plus 100 mm fast APC
* Process Acceptance criteria for thermal and plasma Al2O3 and TiO2

== Related Instrumentation in the KNI ==
===== Sputtering Systems =====
* [[ATC Orion 8: Dielectric Sputter System|ATC Orion 8: Dielectric Sputter System]]
* [[ATC Orion 8: Chalcogenide Sputter System|ATC Orion 8: Chalcogenide Sputter System]]

===== Electron Beam Evaporation Systems =====
* [[Labline: Electron Beam Evaporator|Labline: Electron Beam Evaporator]]
* [[CHA: Electron Beam Evaporator|CHA: Electron Beam Evaporator]]

===== Chemical Vapor Deposition =====
* [[FlexAL II: Atomic Layer Deposition (ALD)|FlexAL II: Atomic Layer Deposition (ALD)]]
* [[Plasma-Enhanced Chemical Vapor Deposition (PECVD)|Plasma-Enhanced Chemical Vapor Deposition (PECVD)]]

Tube Furnaces for Wet & Dry Processing

2022-04-15T23:13:10Z

Kmmckenz: added sapphire samples allowed

{{InstrumentInfoboxOneImage|
|InstrumentName = Tystar Tytan Tube Furnaces 1 & 2
|HeaderColor = #E6E7E8
|ImageOne = Tystar-Tytan-Tube-Furnaces.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Support_Tools|Support Tools]], [[Equipment_List#Thermal_Processing|Thermal Processing]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-5732
|Manufacturer = Tystar Corporation
|Model = Tytan Horizontal Diffusion Furnace
|Techniques = Oxidation, Annealing
|EmailList = kni-tystar
|EmailListName = Tystar
}}
== Description ==
The system is designed for processing up to one-hundred, 150 mm (6") silicon or sapphire wafers per tube and can accommodate smaller sample sizes also. Tube 1 is designated for wet & dry oxidation using a flask evaporator. Tube 2 is designated for dry oxidation and annealing.
===== Applications =====
* Dry & Wet oxidation
* Annealing
===== Allowed Materials =====
* Silicon or sapphire that is completely free of metal or organic contamination
** Recommended to have undergone a standard RCA clean or similar beforehand
* No other sample material allowed
* No metal or organic contamination
** Wafers must not have been contacted by metal tweezers, etc. without appropriate cleaning to remove metal contamination
===== Gas List =====
* Nitrogen
* Oxygen
* Water Vapor (Tube 1)
== Resources ==
===== Equipment Data =====
* [https://caltech.box.com/s/lul90odaqj4rp9inb6qt2mft2ean0qqa Deposition Pass-down equipment information]
===== Tystar Oxidation Recipe =====
* [https://caltech.box.com/s/nqiiqwlhip4dcult2mtuvvdlxw0gv086 Wet Oxidation 1000C ]
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/yrvj5tar3r2e2ldq9orm2bh5mlkavw05 KNI SOP ]

Tube Furnaces for Wet & Dry Processing

2022-04-08T17:32:29Z

Kmmckenz:

{{InstrumentInfoboxOneImage|
|InstrumentName = Tystar Tytan Tube Furnaces 1 & 2
|HeaderColor = #E6E7E8
|ImageOne = Tystar-Tytan-Tube-Furnaces.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Support_Tools|Support Tools]], [[Equipment_List#Thermal_Processing|Thermal Processing]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-5732
|Manufacturer = Tystar Corporation
|Model = Tytan Horizontal Diffusion Furnace
|Techniques = Oxidation, Annealing
|EmailList = kni-tystar
|EmailListName = Tystar
}}
== Description ==
The system is designed for processing up to one-hundred, 150 mm (6") silicon wafers per tube and can accommodate smaller sample sizes also. Tube 1 is designated for wet & dry oxidation using a flask evaporator. Tube 2 is designated for dry oxidation and annealing.
===== Applications =====
* Dry & Wet oxidation
* Annealing
===== Allowed Materials =====
* Silicon that is completely free of metal or organic contamination
** Recommended to have undergone a standard RCA clean or similar beforehand
* No other sample material allowed
* No metal or organic contamination
** Wafers must not have been contacted by metal tweezers, etc. without appropriate cleaning to remove metal contamination
===== Gas List =====
* Nitrogen
* Oxygen
* Water Vapor (Tube 1)
== Resources ==
===== Equipment Data =====
* [https://caltech.box.com/s/lul90odaqj4rp9inb6qt2mft2ean0qqa Deposition Pass-down equipment information]
===== Tystar Oxidation Recipe =====
* [https://caltech.box.com/s/nqiiqwlhip4dcult2mtuvvdlxw0gv086 Wet Oxidation 1000C ]
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/yrvj5tar3r2e2ldq9orm2bh5mlkavw05 KNI SOP ]

Dual Chamber RIE: Silicon, III-V Material & Organics Etcher

2022-03-16T23:38:40Z

Kmmckenz: removed * III-V Material Etching application

{{InstrumentInfoboxOneImage|
|InstrumentName = Dual Chamber RIE
|HeaderColor = #FFE2B9
|ImageOne = Dual-Chamber-RIE_Plasma-Therm-SLR.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Etching|Etching]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-5732
|Manufacturer = Plasma-Therm
|Model = SLR 720
|Techniques = Silicon and compound semiconductor Reactive Ion Etching
|EmailList = kni-plasmatherm
|EmailListName = Plasmatherm RIE
}}
== Description ==
The Plasma-Therm SLR 720 is a dual-chamber reactive ion etching (RIE) system with a load-lock. It is designated for etching silicon semiconductors with a traditional RIE process.
===== Applications =====
* Silicon Etching
* Organic Material Etching

===== Allowed Material in RIE =====
* Si, SixNy, SiO2, Ge
* PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3 hard masks
* Buried/backside metal ok if never exposed (not an etch stop)

===== RIE Gas List =====
* SF6
* CHF3
* CF4
* O2
* Ar
* He
* H2

== Resources ==
===== Equipment Data =====
* [https://caltech.box.com/s/y0oiacrryzcrxv6so2p6d4zpysvj48cf Etching Pass-down equipment information]
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/jsskat7yic4p7td31941dxuj97ja6er5 KNI SOP]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]

===== Process Documents =====
* [https://caltech.box.com/s/3n21r2o30u476ppnxfp657o3zbs9f0on Process Standards]
* [https://caltech.box.com/s/wemw91xtjrh7ac34ks9ai3lv1oujivxa Al2O3 Etch in Oxford ICP and Plasmatherm RIE]

===== Review Articles =====
* [https://caltech.box.com/s/3fnc4a7qeyr1up6kth599j7ojybka2vb Guidelines for Etching Silicon MEMS Structures]
* [https://caltech.box.com/s/j61w7vr4f8cdjr64jrnz1t37oizdhl7f Etch rates for MEMS Processing - Part I]
* [https://caltech.box.com/s/ls0jl268j4at6z39g6kv8wivevpq80eh Etch Rates for MEMS Processing - Part II]
* [https://caltech.box.com/s/cetpre7d66gssbhtaicnhtovyo6ngzjv Dry Etching of Electronic Oxides, Polymers, and Semiconductors]
* [https://caltech.box.com/s/pauf384duhejuwzfwan71eam7nkvdrxw Alumina etch masks for fabrication of high-aspect-ratio silicon micropillars and nanopillars]

===== Manufacturer Manuals =====
* In progress

== Specifications ==
===== Manufacturer Specifications =====
* In progress
===== System Features =====
* In progress
===== System Specifications =====
* In progress

== Related Tools ==
* [https://lab.kni.caltech.edu/ICP-RIE:_III-V,_Metal_%26_Silicon_Etcher Oxford III-V ICP-RIE]
* [https://lab.kni.caltech.edu/ICP-RIE:_Dielectric_Etcher Oxford Dielectric ICP-RIE]
* [https://lab.kni.caltech.edu/DRIE:_Bosch_%26_Cryo_ICP-RIE_for_Silicon Oxford DRIE ICP-RIE]
* [https://lab.kni.caltech.edu/XeF2_Etcher_for_Silicon XeF2 Etcher]
* [https://lab.kni.caltech.edu/Plasma-Enhanced_Chemical_Vapor_Deposition_(PECVD) Oxford PECVD]
* [https://lab.kni.caltech.edu/FlexAL_II:_Atomic_Layer_Deposition_(ALD) Oxford ALD]

Dual Chamber RIE: Silicon, III-V Material & Organics Etcher

2022-03-16T23:38:11Z

Kmmckenz: removed reference to etching III-V compounds

{{InstrumentInfoboxOneImage|
|InstrumentName = Dual Chamber RIE
|HeaderColor = #FFE2B9
|ImageOne = Dual-Chamber-RIE_Plasma-Therm-SLR.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Etching|Etching]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-5732
|Manufacturer = Plasma-Therm
|Model = SLR 720
|Techniques = Silicon and compound semiconductor Reactive Ion Etching
|EmailList = kni-plasmatherm
|EmailListName = Plasmatherm RIE
}}
== Description ==
The Plasma-Therm SLR 720 is a dual-chamber reactive ion etching (RIE) system with a load-lock. It is designated for etching silicon semiconductors with a traditional RIE process.
===== Applications =====
* Silicon Etching
* III-V Material Etching
* Organic Material Etching

===== Allowed Material in RIE =====
* Si, SixNy, SiO2, Ge
* PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3 hard masks
* Buried/backside metal ok if never exposed (not an etch stop)

===== RIE Gas List =====
* SF6
* CHF3
* CF4
* O2
* Ar
* He
* H2

== Resources ==
===== Equipment Data =====
* [https://caltech.box.com/s/y0oiacrryzcrxv6so2p6d4zpysvj48cf Etching Pass-down equipment information]
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/jsskat7yic4p7td31941dxuj97ja6er5 KNI SOP]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]

===== Process Documents =====
* [https://caltech.box.com/s/3n21r2o30u476ppnxfp657o3zbs9f0on Process Standards]
* [https://caltech.box.com/s/wemw91xtjrh7ac34ks9ai3lv1oujivxa Al2O3 Etch in Oxford ICP and Plasmatherm RIE]

===== Review Articles =====
* [https://caltech.box.com/s/3fnc4a7qeyr1up6kth599j7ojybka2vb Guidelines for Etching Silicon MEMS Structures]
* [https://caltech.box.com/s/j61w7vr4f8cdjr64jrnz1t37oizdhl7f Etch rates for MEMS Processing - Part I]
* [https://caltech.box.com/s/ls0jl268j4at6z39g6kv8wivevpq80eh Etch Rates for MEMS Processing - Part II]
* [https://caltech.box.com/s/cetpre7d66gssbhtaicnhtovyo6ngzjv Dry Etching of Electronic Oxides, Polymers, and Semiconductors]
* [https://caltech.box.com/s/pauf384duhejuwzfwan71eam7nkvdrxw Alumina etch masks for fabrication of high-aspect-ratio silicon micropillars and nanopillars]

===== Manufacturer Manuals =====
* In progress

== Specifications ==
===== Manufacturer Specifications =====
* In progress
===== System Features =====
* In progress
===== System Specifications =====
* In progress

== Related Tools ==
* [https://lab.kni.caltech.edu/ICP-RIE:_III-V,_Metal_%26_Silicon_Etcher Oxford III-V ICP-RIE]
* [https://lab.kni.caltech.edu/ICP-RIE:_Dielectric_Etcher Oxford Dielectric ICP-RIE]
* [https://lab.kni.caltech.edu/DRIE:_Bosch_%26_Cryo_ICP-RIE_for_Silicon Oxford DRIE ICP-RIE]
* [https://lab.kni.caltech.edu/XeF2_Etcher_for_Silicon XeF2 Etcher]
* [https://lab.kni.caltech.edu/Plasma-Enhanced_Chemical_Vapor_Deposition_(PECVD) Oxford PECVD]
* [https://lab.kni.caltech.edu/FlexAL_II:_Atomic_Layer_Deposition_(ALD) Oxford ALD]

Kelly McKenzie

2022-02-16T19:44:16Z

Kmmckenz: /* Role in the KNI */ edited Laboratory Technician to Plasma Process Engineer

__NOTOC__
{{StaffMemberInfobox
|StaffName = Kelly McKenzie
|StaffPhoto = McKenzie_Kelly_2.jpg
|JobTitle = Plasma Process Engineer
|AreasResponsibility = Etch and Deposition
|CaltechID = kmmckenz
|Phone = 626-395-5732 (office)
|OfficeLocation = 130 Steele
}}
== About ==
===== Role in the KNI =====

Kelly is the Plasma Process Engineer for the Kavli Nanoscience Institute (KNI) at the California Institute of Technology. Kelly manages the KNI's suite of plasma etch and chemical vapor deposition systems, as well as the tools for wet and dry oxidation and annealing. In her roll, Kelly trains new researchers to operate the equipment and provides technical support for helping users carry out their projects' objectives.

Kelly joined Caltech in 2017 as a graduate student in the Atwater research group in the Applied Physics & Materials Science department where she completed her master's. She returned in July 2021 as the laboratory technician for the KNI.

===== Education =====

Kelly received her M.S. in Materials Science from Caltech and B.S. degrees in Electrical Engineering and in Physics from the University of Arkansas at Fayetteville.

===== Managed Equipment =====

Chemical Vapor Deposition (CVD)
* [[FlexAL II: Atomic Layer Deposition (ALD) | Atomic Layer Deposition (ALD): Oxford Instruments FlexAL II]]
* [[Plasma-Enhanced Chemical Vapor Deposition (PECVD) | Plasma-Enhanced Chemical Vapor Deposition (PECVD): Oxford Instruments System 100]]

Dry Etching
* [[DRIE: Bosch & Cryo ICP-RIE for Silicon | Silicon Etcher: Oxford Instruments DRIE System 100 Bosch & Cryo ICP-RIE]]
* [[ICP-RIE: III-V, Metal & Silicon Etcher | III-V Material, Metal & Silicon Etcher: Oxford Instruments System 100 ICP-RIE]]
* [[ICP-RIE: Dielectric Etcher | Dielectric Material Etcher: Oxford Instruments Dielectric System 100 ICP-RIE]]
* [[Dual Chamber RIE: Silicon, III-V Material & Organics Etcher | Silicon, III-V Material & Organics Etcher: Plasma-Therm Dual Chamber RIE]]
* [[Tergeo Plus ICP- & CCP-RIE: Oxygen & Argon Plasma Cleaner | Oxygen & Argon Plasma Cleaner: PIE Scientific Tergeo Plus ICP- & CCP-RIE]]
* [[XeF2 Etcher for Silicon | XeF2 Etcher for Silicon]]

Thermal Processing
* [[Tube Furnaces for Wet & Dry Processing | Tube Furnaces: Tystar Tytan 1 & 2 (Wet & Dry Oxidation and Annealing)]]

Silicon Deposition: Oxford Instruments Plasmalab System 100 PECVD

2021-12-21T00:55:18Z

Kmmckenz: fixed typo ("treeh" to "three")

{{InstrumentInfoboxOneImage|
|InstrumentName = PECVD
|HeaderColor = #F2682A
|ImageOne = PECVD_Oxford-System-100.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Deposition|Deposition]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-5732
|Manufacturer = Oxford Instruments
|Model = Plasmalab System 100
|Techniques = Amorphous Silicon Deposition, Silicon Dioxide Deposition, Silicon Nitride Deposition
|EmailList = kni-oxfordpecvd
|EmailListName = Oxford PECVD
}}
== Description ==
The Plasma-Enhanced Chemical Vapor Deposition (PECVD) system is an Oxford Instruments Plasma Technology Plasmalab System 100 platform that is optimized for amorphous silicon, silicon dioxide, and silicon nitride deposition. The PECVD has a variable temperature stage (RT to 600 °C). This system supports wafer sizes up to 6 inches, and provides PECVD film growth over a wide range of process conditions.
===== Applications =====
* Amorphous Silicon Deposition
* Silicon Dioxide Deposition
* Silicon Nitride Deposition
===== Allowed material in PECVD System =====
* Si, SixNy, SiO2, SOI
* Hard masks compatible with process temperature
===== PECVD Gas List =====
* 5% SiH4 in N2
* 5% SiH4 in Ar
* NH3
* N2O
* N2
* Mixture of CF4 and O2 (4:1) for Plasma Clean

== Resources ==

===== Equipment Data =====
* [https://caltech.box.com/s/lul90odaqj4rp9inb6qt2mft2ean0qqa Deposition Pass-down equipment information]
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/c8qx3ikzjb05x44o4updpqs36ra39ytw KNI SOP]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]
===== Process Documents =====
* [https://caltech.box.com/s/qnxzioeoudzbnow9aopguf9xkysxsey3 KNI's Amorphous Silicon recipe]
* [https://caltech.box.com/s/gy10uau7tikhvhakgpjvlzalb7boavbv KNI's 350C SiO2 recipe]
* [https://caltech.box.com/s/0e14n82o7o9yziqmlygkakfcv1lp65iu Process Standards]
* [https://caltech.box.com/s/6b2ivuuguflqjaqby5werlcslmmudryf High rate SiOx]
* [https://caltech.box.com/s/vi6vb1nz8thm3sflt5ncoyhi62tomi82 High rate SiNx]
* [https://caltech.box.com/s/tc4j0yr2jazv0rd6ey22ri8jd1asl326 Low Rate SiOx]
* [https://caltech.box.com/s/r3socf5rslp7qs9rb5o7vvpyp12qf0ps Low rate SiNx]
* [https://caltech.box.com/s/6acyh95hslt0q711makbllgqjrexpew1 Amorphous Silicon Deposition (Silane/helium)]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/116/System%20Manual%20for%20Caltech%2094-219848.pdf Oxford PECVD System Manual]
* [https://caltech.box.com/s/zqfonyv64m2m76mo8b4xn63ljz9ee4i5 Alcatel ADS 602P dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/kvgp7d7zx9gczapf7iun791m234vevod Manufacturer Data Sheet]
===== System Features =====
* Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* PECVD process chamber with 160 mm pumping port, view port, and an additional rear port for optical emission end-point-detection
* Heated upper electrode to prevent condensation of low vapor pressure precursors
* PECVD 205 mm electrically heated (700 °C) lower electrode with central wafer lift mechanism
* Parameter ramping software
* 5 Torr capacitance manometer for process control, and penning for base pressure measurement
* Process chamber pumping with 63 mm branch to APC, and isolation valve; chamber base pressure turbo, backed by a refurbished dry pump with roots
* Twelve line gas pod with two non-toxic and three toxic digital mass-flow-controlled gas lines and cleaning gas
* Chamber Gas ring, with split gas manifold
* Liquid vapor delivery system
* Single-wafer automatic insertion load lock with soft pump option
===== System Specifications =====
* Chamber wall heating 80 °C
* 30/300 W RF generator close-coupled to the upper electrode through an automatic matching unit; the generator is configured to operate in a low-power mode (0-30 W) for higher accuracy during low-rate deposition processes
* 600 W solid-state 50-460 kHz LF generator

== Related Instrumentation in the KNI ==
===== Sputtering Systems =====
* [[ATC Orion 8: Dielectric Sputter System|ATC Orion 8: Dielectric Sputter System]]
* [[ATC Orion 8: Chalcogenide Sputter System|ATC Orion 8: Chalcogenide Sputter System]]

===== Electron Beam Evaporation Systems =====
* [[Labline: Electron Beam Evaporator|Labline: Electron Beam Evaporator]]
* [[CHA: Electron Beam Evaporator|CHA: Electron Beam Evaporator]]

===== Chemical Vapor Deposition =====
* [[FlexAL II: Atomic Layer Deposition (ALD)|FlexAL II: Atomic Layer Deposition (ALD)]]
* [[Plasma-Enhanced Chemical Vapor Deposition (PECVD)|Plasma-Enhanced Chemical Vapor Deposition (PECVD)]]

Silicon Deposition: Oxford Instruments Plasmalab System 100 PECVD

2021-12-21T00:54:14Z

Kmmckenz: Undo revision 2771 by Kmmckenz (talk)

{{InstrumentInfoboxOneImage|
|InstrumentName = PECVD
|HeaderColor = #F2682A
|ImageOne = PECVD_Oxford-System-100.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Deposition|Deposition]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-5732
|Manufacturer = Oxford Instruments
|Model = Plasmalab System 100
|Techniques = Amorphous Silicon Deposition, Silicon Dioxide Deposition, Silicon Nitride Deposition
|EmailList = kni-oxfordpecvd
|EmailListName = Oxford PECVD
}}
== Description ==
The Plasma-Enhanced Chemical Vapor Deposition (PECVD) system is an Oxford Instruments Plasma Technology Plasmalab System 100 platform that is optimized for amorphous silicon, silicon dioxide, and silicon nitride deposition. The PECVD has a variable temperature stage (RT to 600 °C). This system supports wafer sizes up to 6 inches, and provides PECVD film growth over a wide range of process conditions.
===== Applications =====
* Amorphous Silicon Deposition
* Silicon Dioxide Deposition
* Silicon Nitride Deposition
===== Allowed material in PECVD System =====
* Si, SixNy, SiO2, SOI
* Hard masks compatible with process temperature
===== PECVD Gas List =====
* 5% SiH4 in N2
* 5% SiH4 in Ar
* NH3
* N2O
* N2
* Mixture of CF4 and O2 (4:1) for Plasma Clean

== Resources ==

===== Equipment Data =====
* [https://caltech.box.com/s/lul90odaqj4rp9inb6qt2mft2ean0qqa Deposition Pass-down equipment information]
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/c8qx3ikzjb05x44o4updpqs36ra39ytw KNI SOP]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]
===== Process Documents =====
* [https://caltech.box.com/s/qnxzioeoudzbnow9aopguf9xkysxsey3 KNI's Amorphous Silicon recipe]
* [https://caltech.box.com/s/gy10uau7tikhvhakgpjvlzalb7boavbv KNI's 350C SiO2 recipe]
* [https://caltech.box.com/s/0e14n82o7o9yziqmlygkakfcv1lp65iu Process Standards]
* [https://caltech.box.com/s/6b2ivuuguflqjaqby5werlcslmmudryf High rate SiOx]
* [https://caltech.box.com/s/vi6vb1nz8thm3sflt5ncoyhi62tomi82 High rate SiNx]
* [https://caltech.box.com/s/tc4j0yr2jazv0rd6ey22ri8jd1asl326 Low Rate SiOx]
* [https://caltech.box.com/s/r3socf5rslp7qs9rb5o7vvpyp12qf0ps Low rate SiNx]
* [https://caltech.box.com/s/6acyh95hslt0q711makbllgqjrexpew1 Amorphous Silicon Deposition (Silane/helium)]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/116/System%20Manual%20for%20Caltech%2094-219848.pdf Oxford PECVD System Manual]
* [https://caltech.box.com/s/zqfonyv64m2m76mo8b4xn63ljz9ee4i5 Alcatel ADS 602P dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/kvgp7d7zx9gczapf7iun791m234vevod Manufacturer Data Sheet]
===== System Features =====
* Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* PECVD process chamber with 160 mm pumping port, view port, and an additional rear port for optical emission end-point-detection
* Heated upper electrode to prevent condensation of low vapor pressure precursors
* PECVD 205 mm electrically heated (700 °C) lower electrode with central wafer lift mechanism
* Parameter ramping software
* 5 Torr capacitance manometer for process control, and penning for base pressure measurement
* Process chamber pumping with 63 mm branch to APC, and isolation valve; chamber base pressure turbo, backed by a refurbished dry pump with roots
* Twelve line gas pod with two non-toxic and treeh toxic digital mass-flow-controlled gas lines and cleaning gas
* Chamber Gas ring, with split gas manifold
* Liquid vapor delivery system
* Single-wafer automatic insertion load lock with soft pump option
===== System Specifications =====
* Chamber wall heating 80 °C
* 30/300 W RF generator close-coupled to the upper electrode through an automatic matching unit; the generator is configured to operate in a low-power mode (0-30 W) for higher accuracy during low-rate deposition processes
* 600 W solid-state 50-460 kHz LF generator

== Related Instrumentation in the KNI ==
===== Sputtering Systems =====
* [[ATC Orion 8: Dielectric Sputter System|ATC Orion 8: Dielectric Sputter System]]
* [[ATC Orion 8: Chalcogenide Sputter System|ATC Orion 8: Chalcogenide Sputter System]]

===== Electron Beam Evaporation Systems =====
* [[Labline: Electron Beam Evaporator|Labline: Electron Beam Evaporator]]
* [[CHA: Electron Beam Evaporator|CHA: Electron Beam Evaporator]]

===== Chemical Vapor Deposition =====
* [[FlexAL II: Atomic Layer Deposition (ALD)|FlexAL II: Atomic Layer Deposition (ALD)]]
* [[Plasma-Enhanced Chemical Vapor Deposition (PECVD)|Plasma-Enhanced Chemical Vapor Deposition (PECVD)]]

Silicon Deposition: Oxford Instruments Plasmalab System 100 PECVD

2021-12-21T00:52:20Z

Kmmckenz: added Related Tools section

{{InstrumentInfoboxOneImage|
|InstrumentName = PECVD
|HeaderColor = #F2682A
|ImageOne = PECVD_Oxford-System-100.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Deposition|Deposition]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-5732
|Manufacturer = Oxford Instruments
|Model = Plasmalab System 100
|Techniques = Amorphous Silicon Deposition, Silicon Dioxide Deposition, Silicon Nitride Deposition
|EmailList = kni-oxfordpecvd
|EmailListName = Oxford PECVD
}}
== Description ==
The Plasma-Enhanced Chemical Vapor Deposition (PECVD) system is an Oxford Instruments Plasma Technology Plasmalab System 100 platform that is optimized for amorphous silicon, silicon dioxide, and silicon nitride deposition. The PECVD has a variable temperature stage (RT to 600 °C). This system supports wafer sizes up to 6 inches, and provides PECVD film growth over a wide range of process conditions.
===== Applications =====
* Amorphous Silicon Deposition
* Silicon Dioxide Deposition
* Silicon Nitride Deposition
===== Allowed material in PECVD System =====
* Si, SixNy, SiO2, SOI
* Hard masks compatible with process temperature
===== PECVD Gas List =====
* 5% SiH4 in N2
* 5% SiH4 in Ar
* NH3
* N2O
* N2
* Mixture of CF4 and O2 (4:1) for Plasma Clean

== Resources ==

===== Equipment Data =====
* [https://caltech.box.com/s/lul90odaqj4rp9inb6qt2mft2ean0qqa Deposition Pass-down equipment information]
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/c8qx3ikzjb05x44o4updpqs36ra39ytw KNI SOP]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]
===== Process Documents =====
* [https://caltech.box.com/s/qnxzioeoudzbnow9aopguf9xkysxsey3 KNI's Amorphous Silicon recipe]
* [https://caltech.box.com/s/gy10uau7tikhvhakgpjvlzalb7boavbv KNI's 350C SiO2 recipe]
* [https://caltech.box.com/s/0e14n82o7o9yziqmlygkakfcv1lp65iu Process Standards]
* [https://caltech.box.com/s/6b2ivuuguflqjaqby5werlcslmmudryf High rate SiOx]
* [https://caltech.box.com/s/vi6vb1nz8thm3sflt5ncoyhi62tomi82 High rate SiNx]
* [https://caltech.box.com/s/tc4j0yr2jazv0rd6ey22ri8jd1asl326 Low Rate SiOx]
* [https://caltech.box.com/s/r3socf5rslp7qs9rb5o7vvpyp12qf0ps Low rate SiNx]
* [https://caltech.box.com/s/6acyh95hslt0q711makbllgqjrexpew1 Amorphous Silicon Deposition (Silane/helium)]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/116/System%20Manual%20for%20Caltech%2094-219848.pdf Oxford PECVD System Manual]
* [https://caltech.box.com/s/zqfonyv64m2m76mo8b4xn63ljz9ee4i5 Alcatel ADS 602P dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/kvgp7d7zx9gczapf7iun791m234vevod Manufacturer Data Sheet]
===== System Features =====
* Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* PECVD process chamber with 160 mm pumping port, view port, and an additional rear port for optical emission end-point-detection
* Heated upper electrode to prevent condensation of low vapor pressure precursors
* PECVD 205 mm electrically heated (700 °C) lower electrode with central wafer lift mechanism
* Parameter ramping software
* 5 Torr capacitance manometer for process control, and penning for base pressure measurement
* Process chamber pumping with 63 mm branch to APC, and isolation valve; chamber base pressure turbo, backed by a refurbished dry pump with roots
* Twelve line gas pod with two non-toxic and treeh toxic digital mass-flow-controlled gas lines and cleaning gas
* Chamber Gas ring, with split gas manifold
* Liquid vapor delivery system
* Single-wafer automatic insertion load lock with soft pump option
===== System Specifications =====
* Chamber wall heating 80 °C
* 30/300 W RF generator close-coupled to the upper electrode through an automatic matching unit; the generator is configured to operate in a low-power mode (0-30 W) for higher accuracy during low-rate deposition processes
* 600 W solid-state 50-460 kHz LF generator

== Related Instrumentation in the KNI ==
===== Sputtering Systems =====
* [[ATC Orion 8: Dielectric Sputter System|ATC Orion 8: Dielectric Sputter System]]
* [[ATC Orion 8: Chalcogenide Sputter System|ATC Orion 8: Chalcogenide Sputter System]]

===== Electron Beam Evaporation Systems =====
* [[Labline: Electron Beam Evaporator|Labline: Electron Beam Evaporator]]
* [[CHA: Electron Beam Evaporator|CHA: Electron Beam Evaporator]]

===== Chemical Vapor Deposition =====
* [[FlexAL II: Atomic Layer Deposition (ALD)|FlexAL II: Atomic Layer Deposition (ALD)]]
* [[Plasma-Enhanced Chemical Vapor Deposition (PECVD)|Plasma-Enhanced Chemical Vapor Deposition (PECVD)]]

== Related Tools ==
* [https://lab.kni.caltech.edu/ICP-RIE:_III-V,_Metal_%26_Silicon_Etcher Oxford III-V ICP-RIE]
* [https://lab.kni.caltech.edu/ICP-RIE:_Dielectric_Etcher Oxford Dielectric ICP-RIE]
* [https://lab.kni.caltech.edu/DRIE:_Bosch_%26_Cryo_ICP-RIE_for_Silicon Oxford DRIE ICP-RIE]
* [https://lab.kni.caltech.edu/Dual_Chamber_RIE:_Silicon,_III-V_Material_%26_Organics_Etcher Plasma-Therm RIE]
* [https://lab.kni.caltech.edu/XeF2_Etcher_for_Silicon XeF2 Etcher]
* [https://lab.kni.caltech.edu/FlexAL_II:_Atomic_Layer_Deposition_(ALD) Oxford ALD]

Dual Chamber RIE: Silicon, III-V Material & Organics Etcher

2021-12-21T00:51:11Z

Kmmckenz: added Related Tools section

{{InstrumentInfoboxOneImage|
|InstrumentName = Dual Chamber RIE
|HeaderColor = #FFE2B9
|ImageOne = Dual-Chamber-RIE_Plasma-Therm-SLR.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Etching|Etching]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-5732
|Manufacturer = Plasma-Therm
|Model = SLR 720
|Techniques = Silicon and compound semiconductor Reactive Ion Etching
|EmailList = kni-plasmatherm
|EmailListName = Plasmatherm RIE
}}
== Description ==
The Plasma-Therm SLR 720 is a dual-chamber reactive ion etching (RIE) system with a load-lock. It is designated for etching silicon and III-V compound semiconductors with a traditional RIE process.
===== Applications =====
* Silicon Etching
* III-V Material Etching
* Organic Material Etching

===== Allowed Material in RIE =====
* Si, SixNy, SiO2, Ge
* PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3 hard masks
* Buried/backside metal ok if never exposed (not an etch stop)

===== RIE Gas List =====
* SF6
* CHF3
* CF4
* O2
* Ar
* He
* H2

== Resources ==
===== Equipment Data =====
* [https://caltech.box.com/s/y0oiacrryzcrxv6so2p6d4zpysvj48cf Etching Pass-down equipment information]
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/jsskat7yic4p7td31941dxuj97ja6er5 KNI SOP]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]

===== Process Documents =====
* [https://caltech.box.com/s/3n21r2o30u476ppnxfp657o3zbs9f0on Process Standards]
* [https://caltech.box.com/s/wemw91xtjrh7ac34ks9ai3lv1oujivxa Al2O3 Etch in Oxford ICP and Plasmatherm RIE]

===== Review Articles =====
* [https://caltech.box.com/s/3fnc4a7qeyr1up6kth599j7ojybka2vb Guidelines for Etching Silicon MEMS Structures]
* [https://caltech.box.com/s/j61w7vr4f8cdjr64jrnz1t37oizdhl7f Etch rates for MEMS Processing - Part I]
* [https://caltech.box.com/s/ls0jl268j4at6z39g6kv8wivevpq80eh Etch Rates for MEMS Processing - Part II]
* [https://caltech.box.com/s/cetpre7d66gssbhtaicnhtovyo6ngzjv Dry Etching of Electronic Oxides, Polymers, and Semiconductors]
* [https://caltech.box.com/s/pauf384duhejuwzfwan71eam7nkvdrxw Alumina etch masks for fabrication of high-aspect-ratio silicon micropillars and nanopillars]

===== Manufacturer Manuals =====
* In progress

== Specifications ==
===== Manufacturer Specifications =====
* In progress
===== System Features =====
* In progress
===== System Specifications =====
* In progress

== Related Tools ==
* [https://lab.kni.caltech.edu/ICP-RIE:_III-V,_Metal_%26_Silicon_Etcher Oxford III-V ICP-RIE]
* [https://lab.kni.caltech.edu/ICP-RIE:_Dielectric_Etcher Oxford Dielectric ICP-RIE]
* [https://lab.kni.caltech.edu/DRIE:_Bosch_%26_Cryo_ICP-RIE_for_Silicon Oxford DRIE ICP-RIE]
* [https://lab.kni.caltech.edu/XeF2_Etcher_for_Silicon XeF2 Etcher]
* [https://lab.kni.caltech.edu/Plasma-Enhanced_Chemical_Vapor_Deposition_(PECVD) Oxford PECVD]
* [https://lab.kni.caltech.edu/FlexAL_II:_Atomic_Layer_Deposition_(ALD) Oxford ALD]

ICP-RIE: Dielectric Etcher

2021-12-21T00:49:54Z

Kmmckenz: added Related Tools section

{{InstrumentInfoboxOneImage|
|InstrumentName = Dielectric Etcher
|HeaderColor = #FFE2B9
|ImageOne = ICP-RIE_Dielectric-Material-Etcher_.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Etching|Etching]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-5732
|Manufacturer = Oxford Instruments
|Techniques = Dielectric Material Etching
|EmailList = kni-oxfordicp
|EmailListName = Oxford ICP
|Model = Plasmalab System 100
}}
== Description ==
The Dielectric inductively-coupled plasma reactive-ion etcher (ICP-RIE) is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for silicon etching. This system is configured for silicon etching with "pseudoBosch" C4F8 and SF6 gases, and cryogenic silicon etch with SF6 and O2. The silicon ICP-RIE has a variable temperature stage (-150 to 400 °C). This system supports wafer sizes up to 6 inches, and provides accurate deep etching capabilities for silicon and "silicon-like" samples only.
===== Applications =====
* Cryogenic etch of silicon
* pseudo-Bosch of silicon
===== Allowed material in Dielectric Etch System =====
* Si, SixNy, Ge
* PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3 hard masks
* No metals

===== Dielectric Etcher Gas List =====
* SF6
* C4F8
* O2
* Ar
* N2
* N2O
* NH3

== Resources ==
===== Equipment Data =====
* [https://caltech.box.com/s/y0oiacrryzcrxv6so2p6d4zpysvj48cf Etching Pass-down equipment information]
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/0qe85zye5mjlgqxorxa77tzgqgblv3ep General Use SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]

===== Process Documents =====
* [https://caltech.box.com/s/k8gj2bcluhy50in9m2hwz379hnkn9bdw Process Standards]
* [https://caltech.box.com/s/z3ibiol0xp1qwi6cyvnghbxs81p8j5q5 Silicon Waveguide Etch]
* [https://caltech.box.com/s/k8gj2bcluhy50in9m2hwz379hnkn9bdw Silicon Nitride etch]
* [https://caltech.box.com/s/daa9zeonjqphc8v963mi3lojo8me0u9j Cryo-Si Etch]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]
* [https://caltech.box.com/s/3b9zbdj1uoazz7zbz8png25c2ba65vas Comparison of etch rates using different sample-fixing oils]

===== Review Articles =====
* [https://caltech.box.com/s/3fnc4a7qeyr1up6kth599j7ojybka2vb Guidelines for Etching Silicon MEMS Structures]
* [https://caltech.box.com/s/j61w7vr4f8cdjr64jrnz1t37oizdhl7f Etch rates for MEMS Processing - Part I]
* [https://caltech.box.com/s/ls0jl268j4at6z39g6kv8wivevpq80eh Etch Rates for MEMS Processing - Part II]
* [https://caltech.box.com/s/cetpre7d66gssbhtaicnhtovyo6ngzjv Dry Etching of Electronic Oxides, Polymers, and Semiconductors]
* [https://caltech.box.com/s/pauf384duhejuwzfwan71eam7nkvdrxw Alumina etch masks for fabrication of high-aspect-ratio silicon micropillars and nanopillars]
* [https://caltech.box.com/s/q42u5q46nmx2hm53szub556kwcrc0oih David Henry's thesis on dry etching in the KNI's tools]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/124/System%20Manual%20for%20Caltech%2094-219846_a.pdf Oxford Plasmalab System 100 Dielectric Etcher Manual] (login to LabRunr required)
* [https://caltech.box.com/s/juzfel0sy2fv6y3d1zcul8lc3z6ipha4 Edwards Pyrophoric Conditioning System Manual]
* [https://caltech.box.com/s/gclvux5tu28rpssvwncx5sm518uhmebl Edwards QDP 80 dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/85mj9roas98jtwee9d22hk0wk9un54fl Manufacturer System Configuration]
===== System Features =====
* Universal base console which houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
* Variable height 240 mm Cryo RIE electrode
* Parameter ramping software (Not Bosch)
* 100-mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
* 200 mm pumping port is fitted with a 200mm variable gate valve for chamber isolation and process pressure control
* Twelve line gas pod with 7 non-toxic and 3 toxic digital mass-flow-controlled gas lines
* Chamber Gas ring, with split gas manifold
* Alcatel 1300 l/s MAGLEV turbo pump
* Single-wafer automatic insertion load lock with soft pump option
===== System Specifications =====
* Chamber wall heating 80 °C
* Cryo table range -140 to 400 °C
* ICP 380 mm remote high-density plasma source with 5 kW RF generator and automatic matching unit close-coupled to the source.
* Substrate bias control by 30 / 300 W RIE source
* Helium back-side wafer cooling

== Related Tools ==
* [https://lab.kni.caltech.edu/ICP-RIE:_III-V,_Metal_%26_Silicon_Etcher Oxford III-V ICP-RIE]
* [https://lab.kni.caltech.edu/DRIE:_Bosch_%26_Cryo_ICP-RIE_for_Silicon Oxford DRIE ICP-RIE]
* [https://lab.kni.caltech.edu/Dual_Chamber_RIE:_Silicon,_III-V_Material_%26_Organics_Etcher Plasma-Therm RIE]
* [https://lab.kni.caltech.edu/XeF2_Etcher_for_Silicon XeF2 Etcher]
* [https://lab.kni.caltech.edu/Plasma-Enhanced_Chemical_Vapor_Deposition_(PECVD) Oxford PECVD]
* [https://lab.kni.caltech.edu/FlexAL_II:_Atomic_Layer_Deposition_(ALD) Oxford ALD]

ICP-RIE: III-V, Metal & Silicon Etcher

2021-12-21T00:49:13Z

Kmmckenz: added Related Tools section

{{InstrumentInfoboxOneImage|
|InstrumentName = III-V, Metal & Si Etcher
|HeaderColor = #FFE2B9
|ImageOne = ICP-RIE_III-V,Metal,Si-Etcher.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Etching|Etching]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-5732
|Manufacturer = Oxford Instruments
|Techniques = pseudo-Bosch & Cryogenic Si Etch Compound Semiconductor Etching
|EmailList = kni-oxfordicp
|EmailListName = Oxford ICP
|Model = Plasmalab System 100
}}
== Description ==
The III-V, Metal & Silicon inductively-coupled plasma reactive-ion etcher (ICP-RIE) is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for the etching of compound semiconductors, metals, and silicon. In addition to a wide range of gases for etching a variety of III-V materials and metals, this system is configured for highly-selective ICP-RIE of silicon via the pseudo-Bosch process, allowing silicon etching with SF6 and C4F8 gases as well as cryogenic silicon etching with SF6 and O2 over a temperature range of -140 to 300 °C. This system supports wafer sizes up to 6 inches.
===== Applications =====
* InP grating etch
* GaAs photonics device etch
* pseudo-Bosch of silicon
* Metals etch
* Cryogenic etch of silicon (available upon request)
===== Allowed Material in Etcher =====
* Si, SixNy, SiO2, Ge, InP, GaAs, Al, Mo, Nb, W, Ti
* PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3, Cr hard masks
* Metal in etch stack
===== Etching Gas List =====
* SF6
* C4F8
* O2
* Ar
* Cl2
* SiCl4
* CH4
* H2
* HBr

== Resources ==
===== Equipment Data =====
* [https://caltech.box.com/s/y0oiacrryzcrxv6so2p6d4zpysvj48cf Etching Pass-down equipment information]
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/0qe85zye5mjlgqxorxa77tzgqgblv3ep General Use SOP]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]

===== Process Documents =====
* [https://caltech.box.com/s/nondj2ore8rg61tpur6hj4a3hvj8j9s5 Process Standards]
* [https://caltech.box.com/s/8zfqalb9u11l31mj3iwydofa8qecyp47 Aluminum Etch via Chlorine/Methane/Hydrogen (KNI Recipe)]
* [https://caltech.box.com/s/wybxe3urco5s6bqw5getfu7p0amxq7wx AlGaN/GaN Etch with Photoresist Mask]
* [https://caltech.box.com/s/q3sq9cwkp5dicigkj6gkvohuqtf5ivwx InP Etch]
* [https://caltech.box.com/s/4e22q4i3e5cpgjyrykf7r4bm0m0pob59 InP/ InGaAsP Laser Facet ICP Etching]
* [https://caltech.box.com/s/borba8iuvxi9qj2pe8g0vj5vo7xpta0d GaAs Via Hole Etch]
* [https://caltech.box.com/s/x0mm9bsvwc17ev3vx5ks759mwa36tpxm Selective GaAs Etch]
* [https://caltech.box.com/s/z3ibiol0xp1qwi6cyvnghbxs81p8j5q5 Silicon Waveguide Etch]
* [https://caltech.box.com/s/k8gj2bcluhy50in9m2hwz379hnkn9bdw Silicon Nitride etch]
* [https://caltech.box.com/s/4e6rskkmv1sgu9ipgfnrzeq0cguo1gc0 Hard Mask Oxide Etch]
* [https://caltech.box.com/s/daa9zeonjqphc8v963mi3lojo8me0u9j Cryo-Si Etch]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]
* [https://caltech.box.com/s/3b9zbdj1uoazz7zbz8png25c2ba65vas Comparison of etch rates using different sample-fixing oils]
* [https://caltech.box.com/s/40kaaqur8ohyg55uq2pv3jqrzlgi98ts Comparison of Pseudo-Bosch ICP-RIE Etch of SiO2-SiNx]
* [https://caltech.box.com/s/wemw91xtjrh7ac34ks9ai3lv1oujivxa Al2O3 Etch in Oxford ICP and Plasmatherm RIE]

===== Review Articles =====
* [https://caltech.box.com/s/3fnc4a7qeyr1up6kth599j7ojybka2vb Guidelines for Etching Silicon MEMS Structures]
* [https://caltech.box.com/s/j61w7vr4f8cdjr64jrnz1t37oizdhl7f Etch rates for MEMS Processing - Part I]
* [https://caltech.box.com/s/ls0jl268j4at6z39g6kv8wivevpq80eh Etch Rates for MEMS Processing - Part II]
* [https://caltech.box.com/s/cetpre7d66gssbhtaicnhtovyo6ngzjv Dry Etching of Electronic Oxides, Polymers, and Semiconductors]
* [https://caltech.box.com/s/pauf384duhejuwzfwan71eam7nkvdrxw Alumina etch masks for fabrication of high-aspect-ratio silicon micropillars and nanopillars]
* [https://caltech.box.com/s/q42u5q46nmx2hm53szub556kwcrc0oih David Henry's thesis on dry etching in the KNI's tools]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/126/System%20Manual%20for%20Caltech%2094-219845.pdf Oxford III-V Metal Etcher System Manual] (login to LabRunr required)
* [https://caltech.box.com/s/gclvux5tu28rpssvwncx5sm518uhmebl Edwards QDP 80 dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/f8f1fx1ffz4ql71suxsvrw0p20b2inp5 Manufacturer Data Sheet]

===== System Features =====
* Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
* Variable height 240 mm Cryo RIE electrode
* Parameter ramping software (Not Bosch)
* 100-mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
* 200 mm pumping port is fitted with a 200 mm variable gate valve for chamber isolation and process pressure control
* Twelve line gas pod with three non-toxic and six toxic digital mass-flow-controlled gas lines
* Alcatel 1300 l/s MAGLEV turbo pump
* Single-wafer automatic insertion load lock with soft pump option

===== System Specifications =====
* Chamber wall heating 80 °C
* Cryo table range -140 to 400 °C
* ICP 380 mm remote high-density plasma source with 5 kW RF generator and automatic matching unit close-coupled to the source
* Substrate bias control by 30 / 300 W RIE source
* Helium back-side wafer cooling

== Related Tools ==
* [https://lab.kni.caltech.edu/ICP-RIE:_Dielectric_Etcher Oxford Dielectric ICP-RIE]
* [https://lab.kni.caltech.edu/DRIE:_Bosch_%26_Cryo_ICP-RIE_for_Silicon Oxford DRIE ICP-RIE]
* [https://lab.kni.caltech.edu/Dual_Chamber_RIE:_Silicon,_III-V_Material_%26_Organics_Etcher Plasma-Therm RIE]
* [https://lab.kni.caltech.edu/XeF2_Etcher_for_Silicon XeF2 Etcher]
* [https://lab.kni.caltech.edu/Plasma-Enhanced_Chemical_Vapor_Deposition_(PECVD) Oxford PECVD]
* [https://lab.kni.caltech.edu/FlexAL_II:_Atomic_Layer_Deposition_(ALD) Oxford ALD]

DRIE: Bosch & Cryo ICP-RIE for Silicon

2021-12-21T00:47:59Z

Kmmckenz: added Related Tools section

{{InstrumentInfobox|
|InstrumentName = DRIE
|HeaderColor = #FFE2B9
|ImageOne = Silicon-Microcones_Paul-A-Kempler.jpg
|ImageTwo = DRIE_Bosch-and-Cryo_ICP–RIE_.jpg
|InstrumentType = [[Equipment_List#Etching|Etching]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-5732
|Manufacturer = Oxford Instruments
|Techniques = Bosch & Cryogenic Etch of Silicon
|EmailList = kni-oxfordicp
|EmailListName = Oxford ICP
|Model = Plasmalab System 100
}}
== Description ==
The MEMS / Bosch / Cryo inductively-coupled plasma reactive-ion etch (ICP-RIE) is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for silicon etching. This system is configured for deep reactive-ion etching (DRIE) via the Bosch process, allowing silicon etching with SF6 and C4F8 gases. Close-coupled gas pods are included in this system for fast Bosch switching.
The silicon ICP-RIE has a variable temperature stage (-150 to 300 °C) to permit cryogenic etching of silicon with SF6 and O2 if needed. This system supports wafer sizes up to 6 inches and provides accurate deep etching capabilities for silicon only.
===== Applications =====
* Deep silicon etch using Bosch process
* Cryogenic etch of silicon
* pseudo-Bosch etch of silicon
===== Allowed material in DRIE =====
* Si, SixNy, SiO2, Ge
* PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3 hard masks
* Buried/backside metal ok if never exposed (not an etch stop)
===== DRIE Gas List =====
* SF6
* C4F8
* O2
* Ar
* N2

== Resources ==
===== Equipment Data =====
* [https://caltech.box.com/s/y0oiacrryzcrxv6so2p6d4zpysvj48cf Etching Pass-down equipment information]
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/0qe85zye5mjlgqxorxa77tzgqgblv3ep General Use SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]

===== Process Documents =====
* [https://caltech.box.com/s/3n21r2o30u476ppnxfp657o3zbs9f0on Process Standards]
* [https://caltech.box.com/s/z3ibiol0xp1qwi6cyvnghbxs81p8j5q5 Silicon Waveguide Etch]
* [https://caltech.box.com/s/c622brbs1udx5hqc744jvdd7wtf2mw32 Bosch Si Etch]
* [https://caltech.box.com/s/v92jrijz2iijzzlnyrbzbolov7zvo3w0 High-Rate Bosch Si Etch]
* [https://caltech.box.com/s/daa9zeonjqphc8v963mi3lojo8me0u9j Cryo-Si Etch]
* [https://caltech.box.com/s/ekzldcen8pjhok0qbpdy796xvs3icae4 Isotropic Si Etch]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]
* [https://caltech.box.com/s/3b9zbdj1uoazz7zbz8png25c2ba65vas Comparison of etch rates using different sample-fixing oils]

===== Review Articles =====
* [https://caltech.box.com/s/3fnc4a7qeyr1up6kth599j7ojybka2vb Guidelines for Etching Silicon MEMS Structures]
* [https://caltech.box.com/s/j61w7vr4f8cdjr64jrnz1t37oizdhl7f Etch rates for MEMS Processing - Part I]
* [https://caltech.box.com/s/ls0jl268j4at6z39g6kv8wivevpq80eh Etch Rates for MEMS Processing - Part II]
* [https://caltech.box.com/s/cetpre7d66gssbhtaicnhtovyo6ngzjv Dry Etching of Electronic Oxides, Polymers, and Semiconductors]
* [https://caltech.box.com/s/pauf384duhejuwzfwan71eam7nkvdrxw Alumina etch masks for fabrication of high-aspect-ratio silicon micropillars and nanopillars]
* [https://caltech.box.com/s/q42u5q46nmx2hm53szub556kwcrc0oih David Henry's thesis on dry etching in the KNI's tools]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/125/LabRunr%20System%20Manual%20for%20Caltech%2094-219846.pdf Oxford Plasmalab System 100 DRIE Manual] (login to LabRunr required)
* [https://caltech.box.com/s/gclvux5tu28rpssvwncx5sm518uhmebl Edwards QDP 80 dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/85mj9roas98jtwee9d22hk0wk9un54fl Manufacturer System Configuration]
===== System Features =====
* Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
* Variable height 240 mm Cryo RIE electrode
* Parameter ramping software
* 100 mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
* 200 mm pumping port is fitted with a 200 mm variable gate valve for chamber isolation and process pressure control
* Close-coupled gas pod to ICP for two digital non-toxic mass-flow-controlled gas lines (SF6, and C4F8)
* Six line gas pod with three non-toxic digital mass-flow-controlled gas lines
* Alcatel 1300 l/s MAGLEV turbo pump
* Single-wafer automatic insertion load lock with soft pump option
* Single user license for Anisotropic Silicon Etch Process (Bosch)
===== System Specifications =====
* Chamber wall heating: 80 °C
* Cryo table range: -150 to 400 °C
* ICP 380 mm remote high-density plasma source with 8 kW RF generator and automatic matching unit close-coupled to the source
* Substrate bias control by 30 / 300W RIE source
* Helium back-side wafer cooling

== Related Tools ==
* [https://lab.kni.caltech.edu/ICP-RIE:_III-V,_Metal_%26_Silicon_Etcher Oxford III-V ICP-RIE]
* [https://lab.kni.caltech.edu/ICP-RIE:_Dielectric_Etcher Oxford Dielectric ICP-RIE]
* [https://lab.kni.caltech.edu/Dual_Chamber_RIE:_Silicon,_III-V_Material_%26_Organics_Etcher Plasma-Therm RIE]
* [https://lab.kni.caltech.edu/XeF2_Etcher_for_Silicon XeF2 Etcher]
* [https://lab.kni.caltech.edu/Plasma-Enhanced_Chemical_Vapor_Deposition_(PECVD) Oxford PECVD]
* [https://lab.kni.caltech.edu/FlexAL_II:_Atomic_Layer_Deposition_(ALD) Oxford ALD]

Dual Chamber RIE: Silicon, III-V Material & Organics Etcher

2021-11-17T20:57:35Z

Kmmckenz: removed incorrect (Oxford ICP) system features, system specifications, manufacturer manual (qdp80 pump). Added "In progress" notes to the missing sections.

Dual Chamber RIE: Silicon, III-V Material & Organics Etcher

2021-10-08T17:26:44Z

Kmmckenz: removed incorrect (Oxford ICP) manufacturer specification, manufacturer manual links

{{InstrumentInfoboxOneImage|
|InstrumentName = Dual Chamber RIE
|HeaderColor = #FFE2B9
|ImageOne = Dual-Chamber-RIE_Plasma-Therm-SLR.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Etching|Etching]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-5732
|Manufacturer = Plasma-Therm
|Model = SLR 720
|Techniques = Silicon and compound semiconductor Reactive Ion Etching
|EmailList = kni-plasmatherm
|EmailListName = Plasmatherm RIE
}}
== Description ==
The Plasma-Therm SLR 720 is a dual-chamber reactive ion etching (RIE) system with a load-lock. It is designated for etching silicon and III-V compound semiconductors with a traditional RIE process.
===== Applications =====
* Silicon Etching
* III-V Material Etching
* Organic Material Etching

===== Allowed Material in RIE =====
* Si, SixNy, SiO2, Ge
* PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3 hard masks
* Buried/backside metal ok if never exposed (not an etch stop)

===== RIE Gas List =====
* SF6
* CHF3
* CF4
* O2
* Ar
* He
* H2

== Resources ==
===== Equipment Data =====
* [https://caltech.box.com/s/y0oiacrryzcrxv6so2p6d4zpysvj48cf Etching Pass-down equipment information]
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/jsskat7yic4p7td31941dxuj97ja6er5 KNI SOP]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]

===== Process Documents =====
* [https://caltech.box.com/s/3n21r2o30u476ppnxfp657o3zbs9f0on Process Standards]
* [https://caltech.box.com/s/wemw91xtjrh7ac34ks9ai3lv1oujivxa Al2O3 Etch in Oxford ICP and Plasmatherm RIE]

===== Review Articles =====
* [https://caltech.box.com/s/3fnc4a7qeyr1up6kth599j7ojybka2vb Guidelines for Etching Silicon MEMS Structures]
* [https://caltech.box.com/s/j61w7vr4f8cdjr64jrnz1t37oizdhl7f Etch rates for MEMS Processing - Part I]
* [https://caltech.box.com/s/ls0jl268j4at6z39g6kv8wivevpq80eh Etch Rates for MEMS Processing - Part II]
* [https://caltech.box.com/s/cetpre7d66gssbhtaicnhtovyo6ngzjv Dry Etching of Electronic Oxides, Polymers, and Semiconductors]
* [https://caltech.box.com/s/pauf384duhejuwzfwan71eam7nkvdrxw Alumina etch masks for fabrication of high-aspect-ratio silicon micropillars and nanopillars]

===== Manufacturer Manuals =====
* [https://caltech.box.com/s/gclvux5tu28rpssvwncx5sm518uhmebl Edwards QDP 80 dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
===== System Features =====
* Universal base console which houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
* Variable height 240 mm Cryo RIE electrode
* Parameter ramping software
* 100 mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
* 200 mm pumping port is fitted with a 200 mm variable gate valve for chamber isolation and process pressure control
* Close-coupled gas pod to ICP for two digital non-toxic mass-flow-controlled gas lines (SF6, and C4F8)
* Six line gas pod with 3 non-toxic digital mass-flow-controlled gas lines
* Alcatel 1300 l/s MAGLEV turbo pump
* Single-wafer automatic insertion load lock with soft pump option
* Single user license for Anisotropic Silicon Etch Process (Bosch)
===== System Specifications =====
* Chamber wall heating 80 °C
* Cryo table range -150 to 400 °C
* ICP 380mm remote high-density plasma source with 8 kW RF generator and automatic matching unit close-coupled to the source.
* Substrate bias control by 30 / 300 W RIE source
* Helium back-side wafer cooling

Tube Furnaces for Wet & Dry Processing

2021-09-21T23:31:29Z

Kmmckenz: update primary staff

{{InstrumentInfoboxOneImage|
|InstrumentName = Tystar Tytan Tube Furnaces 1 & 2
|HeaderColor = #E6E7E8
|ImageOne = Tystar-Tytan-Tube-Furnaces.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Support_Tools|Support Tools]], [[Equipment_List#Thermal_Processing|Thermal Processing]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-5732
|Manufacturer = Tystar Corporation
|Model = Tytan Horizontal Diffusion Furnace
|Techniques = Oxidation, Annealing
|EmailList = kni-tystar
|EmailListName = Tystar
}}
== Description ==
The system is designed for processing up to one-hundred, 150 mm (6") wafers per tube. Tube 1 is designated for wet & dry oxidation using a flask evaporator. Tube 2 is designated for dry oxidation and annealing.
===== Applications =====
* Dry & Wet oxidation
* Annealing
== Resources ==
===== Equipment Data =====
* [https://caltech.box.com/s/lul90odaqj4rp9inb6qt2mft2ean0qqa Deposition Pass-down equipment information]
===== Tystar Oxidation Recipe =====
* [https://caltech.box.com/s/nqiiqwlhip4dcult2mtuvvdlxw0gv086 Wet Oxidation 1000C ]
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/yrvj5tar3r2e2ldq9orm2bh5mlkavw05 KNI SOP ]

Silicon Deposition: Oxford Instruments Plasmalab System 100 PECVD

2021-09-21T23:31:08Z

Kmmckenz: update primary staff

{{InstrumentInfoboxOneImage|
|InstrumentName = PECVD
|HeaderColor = #F2682A
|ImageOne = PECVD_Oxford-System-100.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Deposition|Deposition]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-5732
|Manufacturer = Oxford Instruments
|Model = Plasmalab System 100
|Techniques = Amorphous Silicon Deposition, Silicon Dioxide Deposition, Silicon Nitride Deposition
|EmailList = kni-oxfordpecvd
|EmailListName = Oxford PECVD
}}
== Description ==
The Plasma-Enhanced Chemical Vapor Deposition (PECVD) system is an Oxford Instruments Plasma Technology Plasmalab System 100 platform that is optimized for amorphous silicon, silicon dioxide, and silicon nitride deposition. The PECVD has a variable temperature stage (RT to 600 °C). This system supports wafer sizes up to 6 inches, and provides PECVD film growth over a wide range of process conditions.
===== Applications =====
* Amorphous Silicon Deposition
* Silicon Dioxide Deposition
* Silicon Nitride Deposition
===== Allowed material in PECVD System =====
* Si, SixNy, SiO2, SOI
* Hard masks compatible with process temperature
===== PECVD Gas List =====
* 5% SiH4 in N2
* 5% SiH4 in Ar
* NH3
* N2O
* N2
* Mixture of CF4 and O2 (4:1) for Plasma Clean

== Resources ==

===== Equipment Data =====
* [https://caltech.box.com/s/lul90odaqj4rp9inb6qt2mft2ean0qqa Deposition Pass-down equipment information]
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/c8qx3ikzjb05x44o4updpqs36ra39ytw KNI SOP]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]
===== Process Documents =====
* [https://caltech.box.com/s/qnxzioeoudzbnow9aopguf9xkysxsey3 KNI's Amorphous Silicon recipe]
* [https://caltech.box.com/s/gy10uau7tikhvhakgpjvlzalb7boavbv KNI's 350C SiO2 recipe]
* [https://caltech.box.com/s/0e14n82o7o9yziqmlygkakfcv1lp65iu Process Standards]
* [https://caltech.box.com/s/6b2ivuuguflqjaqby5werlcslmmudryf High rate SiOx]
* [https://caltech.box.com/s/vi6vb1nz8thm3sflt5ncoyhi62tomi82 High rate SiNx]
* [https://caltech.box.com/s/tc4j0yr2jazv0rd6ey22ri8jd1asl326 Low Rate SiOx]
* [https://caltech.box.com/s/r3socf5rslp7qs9rb5o7vvpyp12qf0ps Low rate SiNx]
* [https://caltech.box.com/s/6acyh95hslt0q711makbllgqjrexpew1 Amorphous Silicon Deposition (Silane/helium)]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/116/System%20Manual%20for%20Caltech%2094-219848.pdf Oxford PECVD System Manual]
* [https://caltech.box.com/s/zqfonyv64m2m76mo8b4xn63ljz9ee4i5 Alcatel ADS 602P dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/kvgp7d7zx9gczapf7iun791m234vevod Manufacturer Data Sheet]
===== System Features =====
* Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* PECVD process chamber with 160 mm pumping port, view port, and an additional rear port for optical emission end-point-detection
* Heated upper electrode to prevent condensation of low vapor pressure precursors
* PECVD 205 mm electrically heated (700 °C) lower electrode with central wafer lift mechanism
* Parameter ramping software
* 5 Torr capacitance manometer for process control, and penning for base pressure measurement
* Process chamber pumping with 63 mm branch to APC, and isolation valve; chamber base pressure turbo, backed by a refurbished dry pump with roots
* Twelve line gas pod with two non-toxic and treeh toxic digital mass-flow-controlled gas lines and cleaning gas
* Chamber Gas ring, with split gas manifold
* Liquid vapor delivery system
* Single-wafer automatic insertion load lock with soft pump option
===== System Specifications =====
* Chamber wall heating 80 °C
* 30/300 W RF generator close-coupled to the upper electrode through an automatic matching unit; the generator is configured to operate in a low-power mode (0-30 W) for higher accuracy during low-rate deposition processes
* 600 W solid-state 50-460 kHz LF generator

== Related Instrumentation in the KNI ==
===== Sputtering Systems =====
* [[ATC Orion 8: Dielectric Sputter System|ATC Orion 8: Dielectric Sputter System]]
* [[ATC Orion 8: Chalcogenide Sputter System|ATC Orion 8: Chalcogenide Sputter System]]

===== Electron Beam Evaporation Systems =====
* [[Labline: Electron Beam Evaporator|Labline: Electron Beam Evaporator]]
* [[CHA: Electron Beam Evaporator|CHA: Electron Beam Evaporator]]

===== Chemical Vapor Deposition =====
* [[FlexAL II: Atomic Layer Deposition (ALD)|FlexAL II: Atomic Layer Deposition (ALD)]]
* [[Plasma-Enhanced Chemical Vapor Deposition (PECVD)|Plasma-Enhanced Chemical Vapor Deposition (PECVD)]]

FlexAL II: Atomic Layer Deposition (ALD)

2021-09-21T23:30:39Z

Kmmckenz: update primary staff

{{InstrumentInfoboxOneImage|
|InstrumentName = Atomic Layer Deposition (ALD)
|HeaderColor = #F2682A
|ImageOne = FlexAL-II-ALD.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Deposition|Deposition]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-5732
|Manufacturer = Oxford Instruments
|Techniques = Atomic Layer Deposition of Oxides and Nitrides
|EmailList = kni-ald
|EmailListName = Oxford FlexAl ALD
|Model = FlexAL II
}}
== Description ==
The Atomic Layer Deposition (ALD) system is an Oxford Instruments Plasma Technology FlexAL II platform that is designed to grow thin films one atomic layer at a time under very precise deposition conditions. It is configured with a 240 mm diameter resistance-heated, RF-biased aluminum electrode with temperature control to 600 °C, and substrate sizes up to 6 inches (150 mm), with optional configuration for 8 inches (200 mm). There is an inductively-coupled plasma (ICP) source for plasma-enhanced ALD, as well as the more traditional thermal processes, with six precursor gases to grow a variety of high-purity oxides and nitrides.

Some film examples by KNI lab members include thermally-grown conductive TiO2 as protective coatings for semiconducting photoanodes in water-splitting cells, thermal and plasma-assisted Al2O3 and HfO2 as gate dielectrics in 2D transition metal dichalcogenide materials, as well as NbN and TiN deposition.

===== Applications =====
* Aluminum oxide and nitride deposition
* Silicon dioxide and nitride deposition
* Titanium oxide and nitride deposition
* Hafnium oxide deposition
* Niobium oxide and nitride deposition
* Deposition of other films can be made available upon request

===== Allowed material in ALD System =====
* Si, SixNy, SiO2, SOI
* Hard masks compatible with process temperature

===== ALD Gas List (links to SDS) =====
* [https://caltech.box.com/s/4ydr6ju2pbvulef7e0vzlb8i58nijkrg SF6]
* [https://caltech.box.com/s/s3oi147iafil7ruil2dwgw5kxn9je2a5 N2]
* [https://caltech.box.com/s/sar0sdkzrjyvzh63gww199558297rzaj O2]
* [https://caltech.box.com/s/f08m19vgz2sir41vzqdkql4wcpcsc7nz O3]
* [https://caltech.box.com/s/g4r8qnbmn4gfdly1knni5rhnubpuq0zv NH3]
* [https://caltech.box.com/s/f6080rhdsuu8mblne62c02oapl7319cg H2]
* [https://caltech.box.com/s/djtj0j1671dvo6to8x0t56g2b8ekvmrz Ar]

===== ALD Precursor List (Links to SDS) =====
* [https://caltech.box.com/s/hff83jq4x96new2sgczzvwgacy7tsl0e TMA (aluminum)]
* [https://caltech.box.com/s/pkjuqifvnzle2eanykhvhe4m8hu6qgye TDMAT (titanium)]
* [https://caltech.box.com/s/jurskhuqjxhpnmtl5iwfmgpj8d3apmy3 BTBAS (silicon)]
* [https://caltech.box.com/s/6zdhb6n1yr78wgy9mtjzqkljo75vxb75 TDMAH (hafnium)]
* [https://caltech.box.com/s/pznx6n00avfmmp47h3esqkkc7hsrw04d TBTDEN (niobium)]
* Others upon request

== Resources ==
===== Equipment Data =====
* [https://caltech.box.com/s/lul90odaqj4rp9inb6qt2mft2ean0qqa Deposition Pass-down equipment information]
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/97mn2fyncejg6d4uo5lwtyl98w8n9gd2 KNI SOP]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]

===== Process Documents (login to LabRunr required)=====
* [https://labrunr.caltech.edu/machinefiles/154/Oxford%20Instruments%20ALD%20Materials%20Example%20Guide%20-%202017-10-25.pdf Oxford Instruments ALD Materials Example Guide]
* [https://labrunr.caltech.edu/machinefiles/154/OxfordInstruments%20ALD%20-%20gases%20and%20precursors.pdf Oxford Instruments ALD gases and precursors]
* [https://labrunr.caltech.edu/machinefiles/154/CalTech_Process_Visit_Report_Final.pdf Oxford Instruments ALD Process Acceptance report]
* [https://labrunr.caltech.edu/machinefiles/154/process%20infor%20for%20Caltech_v2.pdf Oxford Instruments ALD Process Information guidance]
* [https://labrunr.caltech.edu/machinefiles/154/ALD%20Bias%20Control%20Oxford%20Instruments.pdf Oxford Instruments ALD Bias Control]

===== Process Resources =====
* [https://caltech.box.com/s/rw25s9zzka0adhgclxr9ppxpoyduanx7 Aluminum Nitride (AlN)]
* [https://caltech.box.com/s/o0lmo99pz3p4cjihmytmvqbvmq5pr1yg Aluminum Oxide (Al2O3)]
* [https://caltech.box.com/s/gvmfu3np83ehfwub7ebuuajyia52thv0 Hafnium Oxide (HfO2)]
* [https://caltech.box.com/s/h7x9a3i8uj55hbahpam9fzni967fjnkp Silicon Nitride (Si3N4)]
* [https://caltech.box.com/s/zaloyrsabapa5b7pvnjxglsgfjeux1zx Titanium Nitride (TiN)]
* [https://caltech.box.com/s/knpefm73sdjsnd7zmo78mr6h273eyx2n Titanium Oxide (TiO2)]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/154/FlexAL_II_IDS_EN_10.pdf Oxford FlexAL ALD System manual] (login to LabRunr)
* [https://caltech.box.com/s/tgypp7gvwxtk8um4pmybietd29fj7htj Adixen 4 Series Multistage Roots dry pumps brochure]
* [https://caltech.box.com/s/eubo1b949weunxvwkti50jhi7nuh7mgb NovaSafe exhaust abatement system manual]
* [https://labrunr.caltech.edu/machinefiles/154/OzoneDel_MAN_EN_1A.PDF Oxford Ozone Delivery module manual] (login to LabRunr)
* [https://caltech.box.com/s/8n7k2wiwqzxlpt32uaj2rwvf7maqu9xl Oxford FlexAl system drawings] (login to LabRunr)

== Specifications ==
===== System Features =====
* FlexAL ALD Process Module
* The chamber is electrically heated to 150 °C
* Two ports at 70° angle from normal for ellipsometry and an additional port for analytical equipment such as RGA
* Precursor Multi-Bubbler Cabinet 6 Way
* Standard Gas Pod externally mounted (8 lines max)
* 4 each Standard gasline and MFC for non-toxic gases
* 3 each By-passed gasline and MFC for toxic gases
* Ozone delivery system for ALD with up to 22% w/w ozone concentration
* Chamber turbo pump Pfeiffer/Adixen ATH500M, ISO200 pipework, APC & heated backing valve kit
* Chamber process pump Pfeiffer/Adixen A604H kit
* FlexAL compact single wafer load lock kit
* Load Lock dry pump kit
* PC & 19" monitor
===== System Specifications =====
* ICP 65 plasma source with 600 W 13.56 MHz RF Generator & AMU
* ALD 600 °C biasable Inconel electrode
* Heated 250 mTorr high resolution temperature compensated capacitance manometer
* ALD 100 mm pumping pipework plus 100 mm fast APC
* Process Acceptance criteria for thermal and plasma Al2O3 and TiO2

== Related Instrumentation in the KNI ==
===== Sputtering Systems =====
* [[ATC Orion 8: Dielectric Sputter System|ATC Orion 8: Dielectric Sputter System]]
* [[ATC Orion 8: Chalcogenide Sputter System|ATC Orion 8: Chalcogenide Sputter System]]

===== Electron Beam Evaporation Systems =====
* [[Labline: Electron Beam Evaporator|Labline: Electron Beam Evaporator]]
* [[CHA: Electron Beam Evaporator|CHA: Electron Beam Evaporator]]

===== Chemical Vapor Deposition =====
* [[FlexAL II: Atomic Layer Deposition (ALD)|FlexAL II: Atomic Layer Deposition (ALD)]]
* [[Plasma-Enhanced Chemical Vapor Deposition (PECVD)|Plasma-Enhanced Chemical Vapor Deposition (PECVD)]]

Dual Chamber RIE: Silicon, III-V Material & Organics Etcher

2021-09-21T23:29:58Z

Kmmckenz: update primary staff

{{InstrumentInfoboxOneImage|
|InstrumentName = Dual Chamber RIE
|HeaderColor = #FFE2B9
|ImageOne = Dual-Chamber-RIE_Plasma-Therm-SLR.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Etching|Etching]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-5732
|Manufacturer = Plasma-Therm
|Model = SLR 720
|Techniques = Silicon and compound semiconductor Reactive Ion Etching
|EmailList = kni-plasmatherm
|EmailListName = Plasmatherm RIE
}}
== Description ==
The Plasma-Therm SLR 720 is a dual-chamber reactive ion etching (RIE) system with a load-lock. It is designated for etching silicon and III-V compound semiconductors with a traditional RIE process.
===== Applications =====
* Silicon Etching
* III-V Material Etching
* Organic Material Etching

===== Allowed Material in RIE =====
* Si, SixNy, SiO2, Ge
* PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3 hard masks
* Buried/backside metal ok if never exposed (not an etch stop)

===== RIE Gas List =====
* SF6
* CHF3
* CF4
* O2
* Ar
* He
* H2

== Resources ==
===== Equipment Data =====
* [https://caltech.box.com/s/y0oiacrryzcrxv6so2p6d4zpysvj48cf Etching Pass-down equipment information]
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/jsskat7yic4p7td31941dxuj97ja6er5 KNI SOP]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]

===== Process Documents =====
* [https://caltech.box.com/s/3n21r2o30u476ppnxfp657o3zbs9f0on Process Standards]
* [https://caltech.box.com/s/wemw91xtjrh7ac34ks9ai3lv1oujivxa Al2O3 Etch in Oxford ICP and Plasmatherm RIE]

===== Review Articles =====
* [https://caltech.box.com/s/3fnc4a7qeyr1up6kth599j7ojybka2vb Guidelines for Etching Silicon MEMS Structures]
* [https://caltech.box.com/s/j61w7vr4f8cdjr64jrnz1t37oizdhl7f Etch rates for MEMS Processing - Part I]
* [https://caltech.box.com/s/ls0jl268j4at6z39g6kv8wivevpq80eh Etch Rates for MEMS Processing - Part II]
* [https://caltech.box.com/s/cetpre7d66gssbhtaicnhtovyo6ngzjv Dry Etching of Electronic Oxides, Polymers, and Semiconductors]
* [https://caltech.box.com/s/pauf384duhejuwzfwan71eam7nkvdrxw Alumina etch masks for fabrication of high-aspect-ratio silicon micropillars and nanopillars]

===== Manufacturer Manuals =====
* [https://caltech.box.com/s/tfieodeis71aligdpgp3g13kuceefnh0 Oxford Plasmalab System 100 DRIE Manual]
* [https://caltech.box.com/s/gclvux5tu28rpssvwncx5sm518uhmebl Edwards QDP 80 dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/85mj9roas98jtwee9d22hk0wk9un54fl Manufacturer System Configuration]
===== System Features =====
* Universal base console which houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
* Variable height 240 mm Cryo RIE electrode
* Parameter ramping software
* 100 mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
* 200 mm pumping port is fitted with a 200 mm variable gate valve for chamber isolation and process pressure control
* Close-coupled gas pod to ICP for two digital non-toxic mass-flow-controlled gas lines (SF6, and C4F8)
* Six line gas pod with 3 non-toxic digital mass-flow-controlled gas lines
* Alcatel 1300 l/s MAGLEV turbo pump
* Single-wafer automatic insertion load lock with soft pump option
* Single user license for Anisotropic Silicon Etch Process (Bosch)
===== System Specifications =====
* Chamber wall heating 80 °C
* Cryo table range -150 to 400 °C
* ICP 380mm remote high-density plasma source with 8 kW RF generator and automatic matching unit close-coupled to the source.
* Substrate bias control by 30 / 300 W RIE source
* Helium back-side wafer cooling

ICP-RIE: Dielectric Etcher

2021-09-21T23:29:20Z

Kmmckenz: update primary staff phone

{{InstrumentInfoboxOneImage|
|InstrumentName = Dielectric Etcher
|HeaderColor = #FFE2B9
|ImageOne = ICP-RIE_Dielectric-Material-Etcher_.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Etching|Etching]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-5732
|Manufacturer = Oxford Instruments
|Techniques = Dielectric Material Etching
|EmailList = kni-oxfordicp
|EmailListName = Oxford ICP
|Model = Plasmalab System 100
}}
== Description ==
The Dielectric inductively-coupled plasma reactive-ion etcher (ICP-RIE) is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for silicon etching. This system is configured for silicon etching with "pseudoBosch" C4F8 and SF6 gases, and cryogenic silicon etch with SF6 and O2. The silicon ICP-RIE has a variable temperature stage (-150 to 400 °C). This system supports wafer sizes up to 6 inches, and provides accurate deep etching capabilities for silicon and "silicon-like" samples only.
===== Applications =====
* Cryogenic etch of silicon
* pseudo-Bosch of silicon
===== Allowed material in Dielectric Etch System =====
* Si, SixNy, Ge
* PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3 hard masks
* No metals

===== Dielectric Etcher Gas List =====
* SF6
* C4F8
* O2
* Ar
* N2
* N2O
* NH3

== Resources ==
===== Equipment Data =====
* [https://caltech.box.com/s/y0oiacrryzcrxv6so2p6d4zpysvj48cf Etching Pass-down equipment information]
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/0qe85zye5mjlgqxorxa77tzgqgblv3ep General Use SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]

===== Process Documents =====
* [https://caltech.box.com/s/k8gj2bcluhy50in9m2hwz379hnkn9bdw Process Standards]
* [https://caltech.box.com/s/z3ibiol0xp1qwi6cyvnghbxs81p8j5q5 Silicon Waveguide Etch]
* [https://caltech.box.com/s/k8gj2bcluhy50in9m2hwz379hnkn9bdw Silicon Nitride etch]
* [https://caltech.box.com/s/daa9zeonjqphc8v963mi3lojo8me0u9j Cryo-Si Etch]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]
* [https://caltech.box.com/s/3b9zbdj1uoazz7zbz8png25c2ba65vas Comparison of etch rates using different sample-fixing oils]

===== Review Articles =====
* [https://caltech.box.com/s/3fnc4a7qeyr1up6kth599j7ojybka2vb Guidelines for Etching Silicon MEMS Structures]
* [https://caltech.box.com/s/j61w7vr4f8cdjr64jrnz1t37oizdhl7f Etch rates for MEMS Processing - Part I]
* [https://caltech.box.com/s/ls0jl268j4at6z39g6kv8wivevpq80eh Etch Rates for MEMS Processing - Part II]
* [https://caltech.box.com/s/cetpre7d66gssbhtaicnhtovyo6ngzjv Dry Etching of Electronic Oxides, Polymers, and Semiconductors]
* [https://caltech.box.com/s/pauf384duhejuwzfwan71eam7nkvdrxw Alumina etch masks for fabrication of high-aspect-ratio silicon micropillars and nanopillars]
* [https://caltech.box.com/s/q42u5q46nmx2hm53szub556kwcrc0oih David Henry's thesis on dry etching in the KNI's tools]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/124/System%20Manual%20for%20Caltech%2094-219846_a.pdf Oxford Plasmalab System 100 Dielectric Etcher Manual] (login to LabRunr required)
* [https://caltech.box.com/s/juzfel0sy2fv6y3d1zcul8lc3z6ipha4 Edwards Pyrophoric Conditioning System Manual]
* [https://caltech.box.com/s/gclvux5tu28rpssvwncx5sm518uhmebl Edwards QDP 80 dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/85mj9roas98jtwee9d22hk0wk9un54fl Manufacturer System Configuration]
===== System Features =====
* Universal base console which houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
* Variable height 240 mm Cryo RIE electrode
* Parameter ramping software (Not Bosch)
* 100-mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
* 200 mm pumping port is fitted with a 200mm variable gate valve for chamber isolation and process pressure control
* Twelve line gas pod with 7 non-toxic and 3 toxic digital mass-flow-controlled gas lines
* Chamber Gas ring, with split gas manifold
* Alcatel 1300 l/s MAGLEV turbo pump
* Single-wafer automatic insertion load lock with soft pump option
===== System Specifications =====
* Chamber wall heating 80 °C
* Cryo table range -140 to 400 °C
* ICP 380 mm remote high-density plasma source with 5 kW RF generator and automatic matching unit close-coupled to the source.
* Substrate bias control by 30 / 300 W RIE source
* Helium back-side wafer cooling

ICP-RIE: III-V, Metal & Silicon Etcher

2021-09-21T23:28:57Z

Kmmckenz: update primary staff phone

{{InstrumentInfoboxOneImage|
|InstrumentName = III-V, Metal & Si Etcher
|HeaderColor = #FFE2B9
|ImageOne = ICP-RIE_III-V,Metal,Si-Etcher.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Etching|Etching]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-5732
|Manufacturer = Oxford Instruments
|Techniques = pseudo-Bosch & Cryogenic Si Etch Compound Semiconductor Etching
|EmailList = kni-oxfordicp
|EmailListName = Oxford ICP
|Model = Plasmalab System 100
}}
== Description ==
The III-V, Metal & Silicon inductively-coupled plasma reactive-ion etcher (ICP-RIE) is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for the etching of compound semiconductors, metals, and silicon. In addition to a wide range of gases for etching a variety of III-V materials and metals, this system is configured for highly-selective ICP-RIE of silicon via the pseudo-Bosch process, allowing silicon etching with SF6 and C4F8 gases as well as cryogenic silicon etching with SF6 and O2 over a temperature range of -140 to 300 °C. This system supports wafer sizes up to 6 inches.
===== Applications =====
* InP grating etch
* GaAs photonics device etch
* pseudo-Bosch of silicon
* Metals etch
* Cryogenic etch of silicon (available upon request)
===== Allowed Material in Etcher =====
* Si, SixNy, SiO2, Ge, InP, GaAs, Al, Mo, Nb, W, Ti
* PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3, Cr hard masks
* Metal in etch stack
===== Etching Gas List =====
* SF6
* C4F8
* O2
* Ar
* Cl2
* SiCl4
* CH4
* H2
* HBr

== Resources ==
===== Equipment Data =====
* [https://caltech.box.com/s/y0oiacrryzcrxv6so2p6d4zpysvj48cf Etching Pass-down equipment information]
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/0qe85zye5mjlgqxorxa77tzgqgblv3ep General Use SOP]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]

===== Process Documents =====
* [https://caltech.box.com/s/nondj2ore8rg61tpur6hj4a3hvj8j9s5 Process Standards]
* [https://caltech.box.com/s/8zfqalb9u11l31mj3iwydofa8qecyp47 Aluminum Etch via Chlorine/Methane/Hydrogen (KNI Recipe)]
* [https://caltech.box.com/s/wybxe3urco5s6bqw5getfu7p0amxq7wx AlGaN/GaN Etch with Photoresist Mask]
* [https://caltech.box.com/s/q3sq9cwkp5dicigkj6gkvohuqtf5ivwx InP Etch]
* [https://caltech.box.com/s/4e22q4i3e5cpgjyrykf7r4bm0m0pob59 InP/ InGaAsP Laser Facet ICP Etching]
* [https://caltech.box.com/s/borba8iuvxi9qj2pe8g0vj5vo7xpta0d GaAs Via Hole Etch]
* [https://caltech.box.com/s/x0mm9bsvwc17ev3vx5ks759mwa36tpxm Selective GaAs Etch]
* [https://caltech.box.com/s/z3ibiol0xp1qwi6cyvnghbxs81p8j5q5 Silicon Waveguide Etch]
* [https://caltech.box.com/s/k8gj2bcluhy50in9m2hwz379hnkn9bdw Silicon Nitride etch]
* [https://caltech.box.com/s/4e6rskkmv1sgu9ipgfnrzeq0cguo1gc0 Hard Mask Oxide Etch]
* [https://caltech.box.com/s/daa9zeonjqphc8v963mi3lojo8me0u9j Cryo-Si Etch]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]
* [https://caltech.box.com/s/3b9zbdj1uoazz7zbz8png25c2ba65vas Comparison of etch rates using different sample-fixing oils]
* [https://caltech.box.com/s/40kaaqur8ohyg55uq2pv3jqrzlgi98ts Comparison of Pseudo-Bosch ICP-RIE Etch of SiO2-SiNx]
* [https://caltech.box.com/s/wemw91xtjrh7ac34ks9ai3lv1oujivxa Al2O3 Etch in Oxford ICP and Plasmatherm RIE]

===== Review Articles =====
* [https://caltech.box.com/s/3fnc4a7qeyr1up6kth599j7ojybka2vb Guidelines for Etching Silicon MEMS Structures]
* [https://caltech.box.com/s/j61w7vr4f8cdjr64jrnz1t37oizdhl7f Etch rates for MEMS Processing - Part I]
* [https://caltech.box.com/s/ls0jl268j4at6z39g6kv8wivevpq80eh Etch Rates for MEMS Processing - Part II]
* [https://caltech.box.com/s/cetpre7d66gssbhtaicnhtovyo6ngzjv Dry Etching of Electronic Oxides, Polymers, and Semiconductors]
* [https://caltech.box.com/s/pauf384duhejuwzfwan71eam7nkvdrxw Alumina etch masks for fabrication of high-aspect-ratio silicon micropillars and nanopillars]
* [https://caltech.box.com/s/q42u5q46nmx2hm53szub556kwcrc0oih David Henry's thesis on dry etching in the KNI's tools]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/126/System%20Manual%20for%20Caltech%2094-219845.pdf Oxford III-V Metal Etcher System Manual] (login to LabRunr required)
* [https://caltech.box.com/s/gclvux5tu28rpssvwncx5sm518uhmebl Edwards QDP 80 dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/f8f1fx1ffz4ql71suxsvrw0p20b2inp5 Manufacturer Data Sheet]

===== System Features =====
* Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
* Variable height 240 mm Cryo RIE electrode
* Parameter ramping software (Not Bosch)
* 100-mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
* 200 mm pumping port is fitted with a 200 mm variable gate valve for chamber isolation and process pressure control
* Twelve line gas pod with three non-toxic and six toxic digital mass-flow-controlled gas lines
* Alcatel 1300 l/s MAGLEV turbo pump
* Single-wafer automatic insertion load lock with soft pump option

===== System Specifications =====
* Chamber wall heating 80 °C
* Cryo table range -140 to 400 °C
* ICP 380 mm remote high-density plasma source with 5 kW RF generator and automatic matching unit close-coupled to the source
* Substrate bias control by 30 / 300 W RIE source
* Helium back-side wafer cooling

DRIE: Bosch & Cryo ICP-RIE for Silicon

2021-09-21T23:28:38Z

Kmmckenz: update primary staff phone

{{InstrumentInfobox|
|InstrumentName = DRIE
|HeaderColor = #FFE2B9
|ImageOne = Silicon-Microcones_Paul-A-Kempler.jpg
|ImageTwo = DRIE_Bosch-and-Cryo_ICP–RIE_.jpg
|InstrumentType = [[Equipment_List#Etching|Etching]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-5732
|Manufacturer = Oxford Instruments
|Techniques = Bosch & Cryogenic Etch of Silicon
|EmailList = kni-oxfordicp
|EmailListName = Oxford ICP
|Model = Plasmalab System 100
}}
== Description ==
The MEMS / Bosch / Cryo inductively-coupled plasma reactive-ion etch (ICP-RIE) is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for silicon etching. This system is configured for deep reactive-ion etching (DRIE) via the Bosch process, allowing silicon etching with SF6 and C4F8 gases. Close-coupled gas pods are included in this system for fast Bosch switching.
The silicon ICP-RIE has a variable temperature stage (-150 to 300 °C) to permit cryogenic etching of silicon with SF6 and O2 if needed. This system supports wafer sizes up to 6 inches and provides accurate deep etching capabilities for silicon only.
===== Applications =====
* Deep silicon etch using Bosch process
* Cryogenic etch of silicon
* pseudo-Bosch etch of silicon
===== Allowed material in DRIE =====
* Si, SixNy, SiO2, Ge
* PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3 hard masks
* Buried/backside metal ok if never exposed (not an etch stop)
===== DRIE Gas List =====
* SF6
* C4F8
* O2
* Ar
* N2

== Resources ==
===== Equipment Data =====
* [https://caltech.box.com/s/y0oiacrryzcrxv6so2p6d4zpysvj48cf Etching Pass-down equipment information]
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/0qe85zye5mjlgqxorxa77tzgqgblv3ep General Use SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]

===== Process Documents =====
* [https://caltech.box.com/s/3n21r2o30u476ppnxfp657o3zbs9f0on Process Standards]
* [https://caltech.box.com/s/z3ibiol0xp1qwi6cyvnghbxs81p8j5q5 Silicon Waveguide Etch]
* [https://caltech.box.com/s/c622brbs1udx5hqc744jvdd7wtf2mw32 Bosch Si Etch]
* [https://caltech.box.com/s/v92jrijz2iijzzlnyrbzbolov7zvo3w0 High-Rate Bosch Si Etch]
* [https://caltech.box.com/s/daa9zeonjqphc8v963mi3lojo8me0u9j Cryo-Si Etch]
* [https://caltech.box.com/s/ekzldcen8pjhok0qbpdy796xvs3icae4 Isotropic Si Etch]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]
* [https://caltech.box.com/s/3b9zbdj1uoazz7zbz8png25c2ba65vas Comparison of etch rates using different sample-fixing oils]

===== Review Articles =====
* [https://caltech.box.com/s/3fnc4a7qeyr1up6kth599j7ojybka2vb Guidelines for Etching Silicon MEMS Structures]
* [https://caltech.box.com/s/j61w7vr4f8cdjr64jrnz1t37oizdhl7f Etch rates for MEMS Processing - Part I]
* [https://caltech.box.com/s/ls0jl268j4at6z39g6kv8wivevpq80eh Etch Rates for MEMS Processing - Part II]
* [https://caltech.box.com/s/cetpre7d66gssbhtaicnhtovyo6ngzjv Dry Etching of Electronic Oxides, Polymers, and Semiconductors]
* [https://caltech.box.com/s/pauf384duhejuwzfwan71eam7nkvdrxw Alumina etch masks for fabrication of high-aspect-ratio silicon micropillars and nanopillars]
* [https://caltech.box.com/s/q42u5q46nmx2hm53szub556kwcrc0oih David Henry's thesis on dry etching in the KNI's tools]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/125/LabRunr%20System%20Manual%20for%20Caltech%2094-219846.pdf Oxford Plasmalab System 100 DRIE Manual] (login to LabRunr required)
* [https://caltech.box.com/s/gclvux5tu28rpssvwncx5sm518uhmebl Edwards QDP 80 dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/85mj9roas98jtwee9d22hk0wk9un54fl Manufacturer System Configuration]
===== System Features =====
* Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
* Variable height 240 mm Cryo RIE electrode
* Parameter ramping software
* 100 mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
* 200 mm pumping port is fitted with a 200 mm variable gate valve for chamber isolation and process pressure control
* Close-coupled gas pod to ICP for two digital non-toxic mass-flow-controlled gas lines (SF6, and C4F8)
* Six line gas pod with three non-toxic digital mass-flow-controlled gas lines
* Alcatel 1300 l/s MAGLEV turbo pump
* Single-wafer automatic insertion load lock with soft pump option
* Single user license for Anisotropic Silicon Etch Process (Bosch)
===== System Specifications =====
* Chamber wall heating: 80 °C
* Cryo table range: -150 to 400 °C
* ICP 380 mm remote high-density plasma source with 8 kW RF generator and automatic matching unit close-coupled to the source
* Substrate bias control by 30 / 300W RIE source
* Helium back-side wafer cooling

ICP-RIE: Dielectric Etcher

2021-09-21T23:27:53Z

Kmmckenz: update primary staff

{{InstrumentInfoboxOneImage|
|InstrumentName = Dielectric Etcher
|HeaderColor = #FFE2B9
|ImageOne = ICP-RIE_Dielectric-Material-Etcher_.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Etching|Etching]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-1319
|Manufacturer = Oxford Instruments
|Techniques = Dielectric Material Etching
|EmailList = kni-oxfordicp
|EmailListName = Oxford ICP
|Model = Plasmalab System 100
}}
== Description ==
The Dielectric inductively-coupled plasma reactive-ion etcher (ICP-RIE) is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for silicon etching. This system is configured for silicon etching with "pseudoBosch" C4F8 and SF6 gases, and cryogenic silicon etch with SF6 and O2. The silicon ICP-RIE has a variable temperature stage (-150 to 400 °C). This system supports wafer sizes up to 6 inches, and provides accurate deep etching capabilities for silicon and "silicon-like" samples only.
===== Applications =====
* Cryogenic etch of silicon
* pseudo-Bosch of silicon
===== Allowed material in Dielectric Etch System =====
* Si, SixNy, Ge
* PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3 hard masks
* No metals

===== Dielectric Etcher Gas List =====
* SF6
* C4F8
* O2
* Ar
* N2
* N2O
* NH3

== Resources ==
===== Equipment Data =====
* [https://caltech.box.com/s/y0oiacrryzcrxv6so2p6d4zpysvj48cf Etching Pass-down equipment information]
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/0qe85zye5mjlgqxorxa77tzgqgblv3ep General Use SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]

===== Process Documents =====
* [https://caltech.box.com/s/k8gj2bcluhy50in9m2hwz379hnkn9bdw Process Standards]
* [https://caltech.box.com/s/z3ibiol0xp1qwi6cyvnghbxs81p8j5q5 Silicon Waveguide Etch]
* [https://caltech.box.com/s/k8gj2bcluhy50in9m2hwz379hnkn9bdw Silicon Nitride etch]
* [https://caltech.box.com/s/daa9zeonjqphc8v963mi3lojo8me0u9j Cryo-Si Etch]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]
* [https://caltech.box.com/s/3b9zbdj1uoazz7zbz8png25c2ba65vas Comparison of etch rates using different sample-fixing oils]

===== Review Articles =====
* [https://caltech.box.com/s/3fnc4a7qeyr1up6kth599j7ojybka2vb Guidelines for Etching Silicon MEMS Structures]
* [https://caltech.box.com/s/j61w7vr4f8cdjr64jrnz1t37oizdhl7f Etch rates for MEMS Processing - Part I]
* [https://caltech.box.com/s/ls0jl268j4at6z39g6kv8wivevpq80eh Etch Rates for MEMS Processing - Part II]
* [https://caltech.box.com/s/cetpre7d66gssbhtaicnhtovyo6ngzjv Dry Etching of Electronic Oxides, Polymers, and Semiconductors]
* [https://caltech.box.com/s/pauf384duhejuwzfwan71eam7nkvdrxw Alumina etch masks for fabrication of high-aspect-ratio silicon micropillars and nanopillars]
* [https://caltech.box.com/s/q42u5q46nmx2hm53szub556kwcrc0oih David Henry's thesis on dry etching in the KNI's tools]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/124/System%20Manual%20for%20Caltech%2094-219846_a.pdf Oxford Plasmalab System 100 Dielectric Etcher Manual] (login to LabRunr required)
* [https://caltech.box.com/s/juzfel0sy2fv6y3d1zcul8lc3z6ipha4 Edwards Pyrophoric Conditioning System Manual]
* [https://caltech.box.com/s/gclvux5tu28rpssvwncx5sm518uhmebl Edwards QDP 80 dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/85mj9roas98jtwee9d22hk0wk9un54fl Manufacturer System Configuration]
===== System Features =====
* Universal base console which houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
* Variable height 240 mm Cryo RIE electrode
* Parameter ramping software (Not Bosch)
* 100-mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
* 200 mm pumping port is fitted with a 200mm variable gate valve for chamber isolation and process pressure control
* Twelve line gas pod with 7 non-toxic and 3 toxic digital mass-flow-controlled gas lines
* Chamber Gas ring, with split gas manifold
* Alcatel 1300 l/s MAGLEV turbo pump
* Single-wafer automatic insertion load lock with soft pump option
===== System Specifications =====
* Chamber wall heating 80 °C
* Cryo table range -140 to 400 °C
* ICP 380 mm remote high-density plasma source with 5 kW RF generator and automatic matching unit close-coupled to the source.
* Substrate bias control by 30 / 300 W RIE source
* Helium back-side wafer cooling

ICP-RIE: III-V, Metal & Silicon Etcher

2021-09-21T23:27:05Z

Kmmckenz: update primary staff

{{InstrumentInfoboxOneImage|
|InstrumentName = III-V, Metal & Si Etcher
|HeaderColor = #FFE2B9
|ImageOne = ICP-RIE_III-V,Metal,Si-Etcher.jpg
|ImageTwo =
|InstrumentType = [[Equipment_List#Etching|Etching]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-1319
|Manufacturer = Oxford Instruments
|Techniques = pseudo-Bosch & Cryogenic Si Etch Compound Semiconductor Etching
|EmailList = kni-oxfordicp
|EmailListName = Oxford ICP
|Model = Plasmalab System 100
}}
== Description ==
The III-V, Metal & Silicon inductively-coupled plasma reactive-ion etcher (ICP-RIE) is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for the etching of compound semiconductors, metals, and silicon. In addition to a wide range of gases for etching a variety of III-V materials and metals, this system is configured for highly-selective ICP-RIE of silicon via the pseudo-Bosch process, allowing silicon etching with SF6 and C4F8 gases as well as cryogenic silicon etching with SF6 and O2 over a temperature range of -140 to 300 °C. This system supports wafer sizes up to 6 inches.
===== Applications =====
* InP grating etch
* GaAs photonics device etch
* pseudo-Bosch of silicon
* Metals etch
* Cryogenic etch of silicon (available upon request)
===== Allowed Material in Etcher =====
* Si, SixNy, SiO2, Ge, InP, GaAs, Al, Mo, Nb, W, Ti
* PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3, Cr hard masks
* Metal in etch stack
===== Etching Gas List =====
* SF6
* C4F8
* O2
* Ar
* Cl2
* SiCl4
* CH4
* H2
* HBr

== Resources ==
===== Equipment Data =====
* [https://caltech.box.com/s/y0oiacrryzcrxv6so2p6d4zpysvj48cf Etching Pass-down equipment information]
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/0qe85zye5mjlgqxorxa77tzgqgblv3ep General Use SOP]
* [https://caltech.box.com/s/4qbaqhklg9bak0hlgd469d1ixxtttgxp Etcher toxic gas handling SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]

===== Process Documents =====
* [https://caltech.box.com/s/nondj2ore8rg61tpur6hj4a3hvj8j9s5 Process Standards]
* [https://caltech.box.com/s/8zfqalb9u11l31mj3iwydofa8qecyp47 Aluminum Etch via Chlorine/Methane/Hydrogen (KNI Recipe)]
* [https://caltech.box.com/s/wybxe3urco5s6bqw5getfu7p0amxq7wx AlGaN/GaN Etch with Photoresist Mask]
* [https://caltech.box.com/s/q3sq9cwkp5dicigkj6gkvohuqtf5ivwx InP Etch]
* [https://caltech.box.com/s/4e22q4i3e5cpgjyrykf7r4bm0m0pob59 InP/ InGaAsP Laser Facet ICP Etching]
* [https://caltech.box.com/s/borba8iuvxi9qj2pe8g0vj5vo7xpta0d GaAs Via Hole Etch]
* [https://caltech.box.com/s/x0mm9bsvwc17ev3vx5ks759mwa36tpxm Selective GaAs Etch]
* [https://caltech.box.com/s/z3ibiol0xp1qwi6cyvnghbxs81p8j5q5 Silicon Waveguide Etch]
* [https://caltech.box.com/s/k8gj2bcluhy50in9m2hwz379hnkn9bdw Silicon Nitride etch]
* [https://caltech.box.com/s/4e6rskkmv1sgu9ipgfnrzeq0cguo1gc0 Hard Mask Oxide Etch]
* [https://caltech.box.com/s/daa9zeonjqphc8v963mi3lojo8me0u9j Cryo-Si Etch]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]
* [https://caltech.box.com/s/3b9zbdj1uoazz7zbz8png25c2ba65vas Comparison of etch rates using different sample-fixing oils]
* [https://caltech.box.com/s/40kaaqur8ohyg55uq2pv3jqrzlgi98ts Comparison of Pseudo-Bosch ICP-RIE Etch of SiO2-SiNx]
* [https://caltech.box.com/s/wemw91xtjrh7ac34ks9ai3lv1oujivxa Al2O3 Etch in Oxford ICP and Plasmatherm RIE]

===== Review Articles =====
* [https://caltech.box.com/s/3fnc4a7qeyr1up6kth599j7ojybka2vb Guidelines for Etching Silicon MEMS Structures]
* [https://caltech.box.com/s/j61w7vr4f8cdjr64jrnz1t37oizdhl7f Etch rates for MEMS Processing - Part I]
* [https://caltech.box.com/s/ls0jl268j4at6z39g6kv8wivevpq80eh Etch Rates for MEMS Processing - Part II]
* [https://caltech.box.com/s/cetpre7d66gssbhtaicnhtovyo6ngzjv Dry Etching of Electronic Oxides, Polymers, and Semiconductors]
* [https://caltech.box.com/s/pauf384duhejuwzfwan71eam7nkvdrxw Alumina etch masks for fabrication of high-aspect-ratio silicon micropillars and nanopillars]
* [https://caltech.box.com/s/q42u5q46nmx2hm53szub556kwcrc0oih David Henry's thesis on dry etching in the KNI's tools]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/126/System%20Manual%20for%20Caltech%2094-219845.pdf Oxford III-V Metal Etcher System Manual] (login to LabRunr required)
* [https://caltech.box.com/s/gclvux5tu28rpssvwncx5sm518uhmebl Edwards QDP 80 dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/f8f1fx1ffz4ql71suxsvrw0p20b2inp5 Manufacturer Data Sheet]

===== System Features =====
* Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
* Variable height 240 mm Cryo RIE electrode
* Parameter ramping software (Not Bosch)
* 100-mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
* 200 mm pumping port is fitted with a 200 mm variable gate valve for chamber isolation and process pressure control
* Twelve line gas pod with three non-toxic and six toxic digital mass-flow-controlled gas lines
* Alcatel 1300 l/s MAGLEV turbo pump
* Single-wafer automatic insertion load lock with soft pump option

===== System Specifications =====
* Chamber wall heating 80 °C
* Cryo table range -140 to 400 °C
* ICP 380 mm remote high-density plasma source with 5 kW RF generator and automatic matching unit close-coupled to the source
* Substrate bias control by 30 / 300 W RIE source
* Helium back-side wafer cooling

DRIE: Bosch & Cryo ICP-RIE for Silicon

2021-09-21T23:26:01Z

Kmmckenz: capitalization of McKenzie

{{InstrumentInfobox|
|InstrumentName = DRIE
|HeaderColor = #FFE2B9
|ImageOne = Silicon-Microcones_Paul-A-Kempler.jpg
|ImageTwo = DRIE_Bosch-and-Cryo_ICP–RIE_.jpg
|InstrumentType = [[Equipment_List#Etching|Etching]]
|RoomLocation = B235 Steele
|LabPhone = 626-395-1532
|PrimaryStaff = [[Kelly McKenzie]]
|StaffEmail = kmmckenz@caltech.edu
|StaffPhone = 626-395-1319
|Manufacturer = Oxford Instruments
|Techniques = Bosch & Cryogenic Etch of Silicon
|EmailList = kni-oxfordicp
|EmailListName = Oxford ICP
|Model = Plasmalab System 100
}}
== Description ==
The MEMS / Bosch / Cryo inductively-coupled plasma reactive-ion etch (ICP-RIE) is an Oxford Instruments Plasma Technology Plasmalab System 100 ICP-RIE 380 system that is optimized for silicon etching. This system is configured for deep reactive-ion etching (DRIE) via the Bosch process, allowing silicon etching with SF6 and C4F8 gases. Close-coupled gas pods are included in this system for fast Bosch switching.
The silicon ICP-RIE has a variable temperature stage (-150 to 300 °C) to permit cryogenic etching of silicon with SF6 and O2 if needed. This system supports wafer sizes up to 6 inches and provides accurate deep etching capabilities for silicon only.
===== Applications =====
* Deep silicon etch using Bosch process
* Cryogenic etch of silicon
* pseudo-Bosch etch of silicon
===== Allowed material in DRIE =====
* Si, SixNy, SiO2, Ge
* PMMA/ZEP/SPR/AZ/maN resists, SiOx/Al2O3 hard masks
* Buried/backside metal ok if never exposed (not an etch stop)
===== DRIE Gas List =====
* SF6
* C4F8
* O2
* Ar
* N2

== Resources ==
===== Equipment Data =====
* [https://caltech.box.com/s/y0oiacrryzcrxv6so2p6d4zpysvj48cf Etching Pass-down equipment information]
===== SOPs & Troubleshooting =====
* [https://caltech.box.com/s/0qe85zye5mjlgqxorxa77tzgqgblv3ep General Use SOP]
* [https://caltech.box.com/s/jesslkguhfgdl9pud83mmtm2ruf6vb50 Power Up Oxford ICP-RIE SOP]
* [https://caltech.box.com/s/29e5taof6r80d45lfb4sgbup1k6rebpx Gas Status Board SOP]

===== Process Documents =====
* [https://caltech.box.com/s/3n21r2o30u476ppnxfp657o3zbs9f0on Process Standards]
* [https://caltech.box.com/s/z3ibiol0xp1qwi6cyvnghbxs81p8j5q5 Silicon Waveguide Etch]
* [https://caltech.box.com/s/c622brbs1udx5hqc744jvdd7wtf2mw32 Bosch Si Etch]
* [https://caltech.box.com/s/v92jrijz2iijzzlnyrbzbolov7zvo3w0 High-Rate Bosch Si Etch]
* [https://caltech.box.com/s/daa9zeonjqphc8v963mi3lojo8me0u9j Cryo-Si Etch]
* [https://caltech.box.com/s/ekzldcen8pjhok0qbpdy796xvs3icae4 Isotropic Si Etch]
* [https://caltech.box.com/s/ymt2wqtkkjwcyw5c71f2adm2a1u041zn Etch chamber cleaning recipes]
* [https://caltech.box.com/s/3b9zbdj1uoazz7zbz8png25c2ba65vas Comparison of etch rates using different sample-fixing oils]

===== Review Articles =====
* [https://caltech.box.com/s/3fnc4a7qeyr1up6kth599j7ojybka2vb Guidelines for Etching Silicon MEMS Structures]
* [https://caltech.box.com/s/j61w7vr4f8cdjr64jrnz1t37oizdhl7f Etch rates for MEMS Processing - Part I]
* [https://caltech.box.com/s/ls0jl268j4at6z39g6kv8wivevpq80eh Etch Rates for MEMS Processing - Part II]
* [https://caltech.box.com/s/cetpre7d66gssbhtaicnhtovyo6ngzjv Dry Etching of Electronic Oxides, Polymers, and Semiconductors]
* [https://caltech.box.com/s/pauf384duhejuwzfwan71eam7nkvdrxw Alumina etch masks for fabrication of high-aspect-ratio silicon micropillars and nanopillars]
* [https://caltech.box.com/s/q42u5q46nmx2hm53szub556kwcrc0oih David Henry's thesis on dry etching in the KNI's tools]

===== Manufacturer Manuals =====
* [https://labrunr.caltech.edu/machinefiles/125/LabRunr%20System%20Manual%20for%20Caltech%2094-219846.pdf Oxford Plasmalab System 100 DRIE Manual] (login to LabRunr required)
* [https://caltech.box.com/s/gclvux5tu28rpssvwncx5sm518uhmebl Edwards QDP 80 dry vacuum pump Manual]

== Specifications ==
===== Manufacturer Specifications =====
* [https://caltech.box.com/s/85mj9roas98jtwee9d22hk0wk9un54fl Manufacturer System Configuration]
===== System Features =====
* Universal base console that houses the electronic sub systems, control units, pneumatics, and turbomolecular pump
* PC 2000 Operating system
* ICP process chamber with 200 mm pumping port, view port and end-point-detection ports for optical emission spectrometer and laser interferometer
* Variable height 240 mm Cryo RIE electrode
* Parameter ramping software
* 100 mTorr, temperature-stabilized capacitance manometer for process control with an active penning gauge for base pressure measurement
* 200 mm pumping port is fitted with a 200 mm variable gate valve for chamber isolation and process pressure control
* Close-coupled gas pod to ICP for two digital non-toxic mass-flow-controlled gas lines (SF6, and C4F8)
* Six line gas pod with three non-toxic digital mass-flow-controlled gas lines
* Alcatel 1300 l/s MAGLEV turbo pump
* Single-wafer automatic insertion load lock with soft pump option
* Single user license for Anisotropic Silicon Etch Process (Bosch)
===== System Specifications =====
* Chamber wall heating: 80 °C
* Cryo table range: -150 to 400 °C
* ICP 380 mm remote high-density plasma source with 8 kW RF generator and automatic matching unit close-coupled to the source
* Substrate bias control by 30 / 300W RIE source
* Helium back-side wafer cooling