https://lab.kni.caltech.edu/api.php?action=feedcontributions&feedformat=atom&user=DvinThe KNI Lab at Caltech - User contributions [en]2026-04-09T20:30:26ZUser contributionsMediaWiki 1.41.5https://lab.kni.caltech.edu/index.php?title=Process_Recipe_Library&diff=2317Process Recipe Library2020-03-16T08:09:11Z<p>Dvin: /* Lithography Process Recipes */</p>
<hr />
<div>You can browse the available recipes below, by lab area. You can also browse directly within the KNI's Box directory. Note that the vast majority of recipes are being made publicly available; only a select few are password-protected for members of the Caltech community:<br />
# [https://caltech.app.box.com/folder/89929833301 All Content (requires login with a caltech.edu email address)]<br />
# [https://caltech.box.com/s/uqtkc7xev3xvda2ueykt7cj1886ok1mg Publicly available content (no login required)]<br />
<br />
<br />
== Lithography Process Recipes ==<br />
===== Electron Beam Lithography =====<br />
* [https://caltech.box.com/s/0xofm2zqmhzm6tv85ihfnhdhzuo8jpjg KNI Introduction to BEAMER]<br />
* [https://youtu.be/AV-SeYZktu4 How to Spin Photoresist onto Wafers and Pieces (Video)]<br />
* [https://caltech.app.box.com/file/549582924881 ZEP 520A Resist: Procedure for spinning, writing & development (Caltech-only access)]<br />
* [https://caltech.box.com/s/lijnz00qwpk7z5qbz8kn9tjo0kqfgz4a HSQ Resist: Procedure for spinning, writing & development (Caltech-only access)]<br />
* [https://caltech.box.com/s/vg9rpa4ac9e1eki79hfecccpohl3qp6u Performing Aligned EBL Patterning Steps with NPGS on an SEM] | [https://caltech.box.com/s/tl4bliegxptu5tfmzu0p7vs1hcnxtyj8 Alignment Template Files]<br />
* [https://caltech.box.com/s/nwuxjbfm0fp0lb4k12albsr3zbnqk9po Bi-Layer PMMA Resist Spinning Recipe]<br />
* [https://caltech.app.box.com/file/634677863695 ma-N Chrome Mask Writing/Etching Recipe]<br />
<br />
===== Helium Ion Beam Lithography =====<br />
* [https://caltech.box.com/s/3s0k77mgx26ytfnafttpoalcknmk7npu Helium Ion Beam Lithography (HIBL) – Parameter Guide]<br />
<br />
===== Neon Ion Beam Lithography =====<br />
* [https://caltech.box.com/s/y8k2a4xnan8x2jte2ss587gh2o2pfs4h Ne-FIB Hard Mask Lithography on ALD Films – Parameter Guide]<br />
<br />
===== Optical Lithography =====<br />
* [https://caltech.box.com/s/5ls5rk4oanod66pfilsuendthutcmfqu AZ5214 Photoresist spinning procedure]<br />
* [https://caltech.box.com/s/xqwbmcj7l4itj6nqp6lbo7h4vexee0tr AZ9260 Photoresist spinning procedure]<br />
* [https://caltech.box.com/s/6et86m5wlrjf80ew9yo0v8rgjifsdzfs AZ nLof 2000 Photoresist Recipe]<br />
* [https://caltech.box.com/s/3pa2im5jj1e86rdozwigt8yfnb8fi5k3 S1813 Photoresist spinning procedure]<br />
* [https://caltech.app.box.com/file/634671303816 SU-8 Photoresist Procedure]<br />
<br />
== Deposition Process Recipes ==<br />
===== Sputtering =====<br />
* [https://caltech.box.com/s/z043k1ne91oowp70lzt69kau0u2nq79f SnO<sub>2</sub> sputtering recipe]<br />
* [https://caltech.box.com/s/oxxv5sy3j7wbqyjc8r9x2wqheabne2lg NbO<sub>x</sub> sputtering recipe] <br />
* [https://caltech.box.com/s/95qrpvvggcaztmpc7whd9v9o4d9rih5x TiO<sub>2</sub> sputtering recipe]<br />
* [https://caltech.box.com/s/k669kh04xglamkidhuo7xq04xan146xt AlN sputtering recipe]<br />
* [https://caltech.box.com/s/7cqdk2g5ic2wa35lu4y2fu03esfk7sdy Al<sub>2</sub>O<sub>3</sub> sputtering recipe]<br />
* [https://caltech.box.com/s/a49yh35hkb2x5qnskivzde0y8z0o4cpn Guide to maintaining a plasma using gradual pressure changes]<br />
<br />
===== Chemical Vapor Deposition (CVD) =====<br />
* [https://caltech.box.com/s/qnxzioeoudzbnow9aopguf9xkysxsey3 PECVD amorphous Si recipe]<br />
* [https://caltech.box.com/s/gy10uau7tikhvhakgpjvlzalb7boavbv PECVD SiO2 (350 C) recipe]<br />
<br />
== Etching Process Recipes ==<br />
===== Dry Etching =====<br />
* [https://caltech.box.com/s/8zfqalb9u11l31mj3iwydofa8qecyp47 Aluminum Etch via Chlorine/Methane/Hydrogen]<br />
* [https://caltech.box.com/s/3b9zbdj1uoazz7zbz8png25c2ba65vas Comparison of etch rates using different sample-fixing oils]<br />
* [https://caltech.box.com/s/vbjlzmbprhw1sg3auoz1oso5clwrme87 In-situ (dielectric sputter) RF plasma etch of thermal SiO2]<br />
* [https://caltech.box.com/s/40kaaqur8ohyg55uq2pv3jqrzlgi98ts Comparison of Pseudo-Bosch ICP-RIE Etch of SiO2-SiNx]<br />
* [https://caltech.box.com/s/wemw91xtjrh7ac34ks9ai3lv1oujivxa Al2O3 Etch in Oxford ICP and Plasmatherm RIE]<br />
<br />
===== Wet Etching =====<br />
* [https://caltech.box.com/s/ob0wosa8tp79xo3wa3taxbjy24kya6qs HF etching of SiO2 deposited via wet thermal oxidation]<br />
* [https://caltech.box.com/s/fjww9pngq4fwzbd26iz5rci4cyc5jv0b HF etching of SiO2 deposited via PECVD]<br />
<br />
== Microscopy Process Recipes ==<br />
===== Focused Ion Beam (FIB) Systems =====<br />
* [https://caltech.box.com/s/1nmp75l3166vj9t1vwwpwu2zyfc4j6ol Cutting & Imaging Cross-sections with SEM/Ga-FIB]<br />
* [https://caltech.box.com/s/3l3w507dxwosuya3nbxgk30tdqyp4qy9 Preparing TEM Lamella Samples with SEM/Ga-FIB]<br />
** [https://caltech.box.com/s/lhaweqbefmep8n79u4nvynsv0cjctuc1 Process Recipe for TEM Lamella prep for Thin Films on Si Substrates]<br />
* [https://caltech.box.com/s/3s0k77mgx26ytfnafttpoalcknmk7npu Helium Ion Beam Lithography (HIBL) – Parameter Guide]<br />
* [https://caltech.box.com/s/y8k2a4xnan8x2jte2ss587gh2o2pfs4h Ne-FIB Hard Mask Lithography on ALD Films – Parameter Guide]<br />
* [https://caltech.box.com/s/ybdwd4zi39p62bx13rc7f8o54444vuyz Helium Ion Beam Imaging with the Electron Flood Gun – Parameter Guide]<br />
* [https://caltech.box.com/s/qobquoi3hs0izeyhdg5d8px9wmmdzuxw Source Rebuild Guide for ORION NanoFab He- & Ne-FIB]<br />
<br />
===== Scanning Electron Microscopes (SEMs) =====<br />
* [https://caltech.box.com/s/e5cdnag69i2w9nm1d0p07fyun4k15b5c Environmental SEM (ESEM) Imaging Guide (for biological and highly non-conductive specimens)]<br />
* [https://caltech.box.com/s/vg9rpa4ac9e1eki79hfecccpohl3qp6u Performing Aligned EBL Patterning Steps with NPGS on an SEM] | [https://caltech.box.com/s/tl4bliegxptu5tfmzu0p7vs1hcnxtyj8 Alignment Template Files]<br />
<br />
===== Transmission Electron Microscopes (TEMs) =====<br />
* [https://caltech.box.com/s/fwhkep9qf3bhdygshvfi4dycy2qpmi0i STEM mode EDS on TF-20 TEM (emphasis on high-resolution 2D mapping)]<br />
* [https://caltech.box.com/s/lstv8e5zy94fnt3o0y7urfw41mpesd38 Procedure to Evaluate Selected Area Electron Diffraction (SAED) Patterns]<br />
**[https://caltech.box.com/s/59upcnvhlqulnazm51b0dihd942xebn3 All Resources for SAED Evaluation, including DPs captured of standard samples]<br />
<br />
== Thermal Processing ==<br />
===== Wet Oxidation =====<br />
* [https://caltech.box.com/s/nqiiqwlhip4dcult2mtuvvdlxw0gv086 Wet Oxidation at 1000C on Tystar Tube Furnaces]<br />
<br />
== Multi-Technique Fabrication Processes ==<br />
* [https://caltech.box.com/s/ohm3fp2h3203yxi6j8peo8bf4v1mz0yt Si-W notched nanopillar fabrication]</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Optical_Lithography_Resources&diff=2316Optical Lithography Resources2020-03-16T08:07:11Z<p>Dvin: /* SU-8 Recipes */</p>
<hr />
<div>'''[https://www.microchemicals.com/downloads/application_notes.html Trove of lithography application notes from MicroChemicals covering troubleshooting, procedures, techniques, theory]'''<br />
<br />
=KNI Photoresists=<br />
<br />
Photoresists provided by KNI:<br />
<br />
*'''S1805, 1813, 1818''': field standard positive, may be used for liftoff and withstands some acid etching. Designed with lower toxicity materials. ([https://kayakuam.com/wp-content/uploads/2019/09/S1800-G2.pdf Manufacturer Spec Sheet]) Shipley 1800 series 0.5-1.9μm range available. 0.5-3.2μm available from manufacturer. Suitable for multiple applications but not niche optimized as latter resists.<br />
*'''AZ 5214''': exposable as positive and image reversal negative. Optimized for liftoff processes with negative sidewall profile. Structure is stable to 130°C after postbake. 1-2μm thickness ([https://www.microchemicals.com/micro/tds_az_nlof2000_series.pdf Manufacturer Spec Sheet])<br />
*'''AZ 9245, 9260''': Intended for thick positive structures 4-20μm. Lower optical absorption and sensitivity permits tall structures but development is slow. ([https://www.microchemicals.com/products/photoresists/az_9260.html Product Page])<br />
*'''AZ nLof 2020, 2035, 2070''': Also optimized for liftoff processes but thicker than 5214 at 2-7μm spinnable. Structures can be made stable to 250°C. High chemical stability, e-beam exposable, but more difficult to remove. ([https://www.microchemicals.com/products/photoresists/az_nlof_2020.html Product Page])<br />
*'''AZ 3330-F''': medium resolution resist, high thermal stability, optimized for metal RIE etch or plating process environments. 1.0-5.0µm spinnable ([http://www.imicromaterials.com/index.php/products/ig-line-photoresists/az-3300-series Product Page])<br />
*'''AZ 4620''': improved surface adhesion for etching and plating applications, photosensitivity is broad and low, spinnable to 6 - 20 µm.([https://www.microchemicals.com/products/photoresists/az_p4620.html Product Page])<br />
<br />
SU8 Photoresists are no longer provided by KNI (SU8 Developer IS provided by KNI):<br />
<br />
<br />
<br />
'''''Reminder of lamp intensities:'''''<br />
<br />
'''Suss 1 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 15 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 25 mW/cm2.<br />
'''Suss 2 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 10 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 15 mW/cm2.<br />
<br />
'''''Reminder of room conditioning:'''''<br />
<br />
* Temperature is specified to 68±1° F in the photolithography and surrounding rooms.<br />
* Humidity is typically 50% in the photolithography room, KNI is specified to 40-70%. Remember that moving resist coated samples to dryer rooms, they will need to rehydrate over some time period.<br />
<br />
==Positive Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | S1813 || Dehydrate on hot plate || 3000rpm || 1.6μm || 115°C 1min || 8-10s || - || - || MF 319 45-60s || - || Suss1 Ch2 || [https://caltech.app.box.com/s/3pa2im5jj1e86rdozwigt8yfnb8fi5k3 Measured 11/19]<br />
|-<br />
| Dehydrate on hot plate || 5000rpm || 1.1μm || 115°C 1min || 8-10s || - || - || MF 319 45-60s || - || Suss1 Ch2 || [https://caltech.app.box.com/s/3pa2im5jj1e86rdozwigt8yfnb8fi5k3 Measured 11/19]<br />
|-<br />
| AZ 5214 || Dehydrate on hot plate || 3500rpm || 1.4μm || 100°C 1min || 25s || - || - || MF319 60s || - || Suss1 Ch1 || [https://caltech.box.com/s/5ls5rk4oanod66pfilsuendthutcmfqu Measured 10/19]<br />
|-<br />
| AZ 9260 || Dehydrate on hot plate || 3000rpm || 7μm || 110°C 145s || 60s || - || - || AZ 400K 1:4 3min || - || Suss1 Ch1 || [https://caltech.box.com/s/xqwbmcj7l4itj6nqp6lbo7h4vexee0tr Measured 1/20]<br />
|}<br />
<br />
==Negative Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | AZ5214 || Dehydrate on hot plate || 2000rpm || 1.8μm || 100°C 1min || 12s || 110°C 45-60s || 40s || MF319 60s || - || Suss1 Ch1 || [https://caltech.box.com/s/5ls5rk4oanod66pfilsuendthutcmfqu Measured 10/19]<br />
|-<br />
| Dehydrate on hot plate || 3500rpm || 1.4μm || 100°C 1min || 9s || 110°C 45-60s || 30s || MF319 60s || - || Suss1 Ch1 || [https://caltech.box.com/s/5ls5rk4oanod66pfilsuendthutcmfqu Measured 10/19]<br />
|-<br />
| nLoF 2070 || Dehydrate on hot plate || 2500rpm || 7um || 110C 90s || 12s || 110C 90s || - || AZ 726 2min || - || Suss1 Ch1 || [https://caltech.app.box.com/file/571703050359 Measured 12/19]<br />
|}<br />
<br />
=Other Photoresists=<br />
<br />
*[https://cleanroom.byu.edu/resistmanufacturers BYU Comprehensive list of photoresists]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes UCSB Photoresist Recipes Page 1]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Contact_Alignment_Recipes UCSB Photoresist Recipes Page 2]<br />
<br />
*[https://cleanroom.byu.edu/photoresists BYU Photoresist Recipes]<br />
<br />
*'''SU-8 2002, 2025, 2075, 2100, 3025, 3050''': epoxy-based negative resist. Optimal for tall high-aspect ratio permanent structures. ([https://kayakuam.com/products/su-8-photoresists/ Manufacturer Spec Sheet ]). Difficult to remove. Spinnable to 1.5-200μm thickness. <br />
<br />
==Non-KNI Photoresist Recipes==<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| SPR 220-7.0 || - || - || - || - || - || - || - || - || - || - || -<br />
|-<br />
|}<br />
<br />
==SU-8 Recipes==<br />
<br />
SU-8 is available in thicknesses ranging from 500nm to 500microns. Remember to use Laurel Spinner 1 and develop in the Wet Chemistry room on the Solvent Bench.<br />
<br />
[https://cleanroom.byu.edu/su8 BYU SU-8 Guide]<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| 2002 || Dehydrate on hot plate || 3000rpm || 1.6μm || 65C 1min 95C 1min || 30s || 65C 1min 95C 1min || SU-8 Developer 60 seconds || Optional || Suss1 Ch1 || [https://caltech.app.box.com/file/634671303816 Measured 2/20]<br />
|-<br />
| 2005 || Dehydrate on hot plate || 3000rpm || 5.2μm || 65C 1min 95C 2min || 40s || 65C 1min 95C 2min || SU-8 Developer 60 seconds || Optional || Suss1 Ch1 || [https://caltech.app.box.com/file/634671303816 Measured 2/20]<br />
|-<br />
| 2015 || Dehydrate on hot plate || 3000rpm || 17μm || 65C 2min 95C 4min || 120s || 65C 1min 95C 3min || SU-8 Developer 180 seconds || Optional || Suss1 Ch1 || [https://caltech.app.box.com/file/634671303816 Measured 2/20]<br />
|}<br />
<br />
=KNI Developers=<br />
<br />
These developers can be used on the Develop Bench in the Optical Lithography room or on the BASE Bench in the Wet Chemistry room:<br />
<br />
*'''AZ 726 MIF''': 2.38% TMAH-based, pre-diluted (ready-to-use) and slightly further diluted only when the application requires it. Contains surfactants to improve development uniformity, so avoid stirring. MIF identifies the developer as 'Metal Ion Free' as it does not contain potassium as in KOH-based developers, it is based on TMAH, an ammonium salt, which prevents metal contamination of semiconductors. 726 is a recommended developer for almost all AZ resists [https://www.microchemicals.com/technical_information/development_photoresist.pdf MicroChemicals Development Application Note]<br />
<br />
*'''Microposit MF 319''': (Metal-Free) TMAH: 2.45%, Polyalkylene glycol <1%, pH: 13. Paired to Shipley/Microposit 1800 series resists, S1805,S1813,S1818 [https://cpb-us-e1.wpmucdn.com/sites.usc.edu/dist/a/194/files/2018/07/MF-319-Developer-1iqbk7y.pdf MSDS]<br />
<br />
*'''Microposit CD-26''': TMAH <5.0 % , pH 13, Also 1800 series targeted, no additional surfactants.<br />
<br />
*'''AZ 400K''': KOH-based. "The recommended dilutions for the AZ® 400 K or AZ® 351 B for most of the processes are developer concentrate : Water = 1: . For very thick resist films, up to a 1:3 ratio can be applied [with lower contrast], with a very fine (sub-µm) structures, a 1:5 or 1:6 ratio can support a high resolution using thin resist films." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note] Users can adjust dilution for accuracy and length of time they will tolerate.<br />
**Critical note on KOH use: "Incompatibilities between MIC and MIF Developers Even small traces of TMAH-based metal ion-free developers such as the AZ® 326 MIF, 726 MIF or 826 MIF) can significantly reduce the development rate of metal ion-containing developers (such as the AZ® 400K or 351B). If both types of developers are used, extremely clean work is to be ensured to prevent mutual contamination even in the ppm range, such as in the dispensing system or developer containers." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note]<br />
<br />
*'''Microposit 2401''': Legacy developer<br />
<br />
<br />
SU-8 developer can ONLY be used on the SOLVENT Bench in the Wet Chemistry room:<br />
<br />
*'''SU-8 Developer''': (Organic Solvent Solution) 1-Methoxy-2-propanol acetate, >99.5%, Synonym propylene glycol monomethyl ether acetate 2-Methoxy-1-propanol acetate, <0.5%. [https://caltech.app.box.com/s/avqs14mt28i1epom0n6w37p55rjqvkbe MSDS] Paired to SU8 series resists. <br />
<br />
<br />
===Surfactants===<br />
<br />
Surfactants were developed and added in the 1980s to photoresist developers to combat photoresists' hydrophobic surfaces which cause "hot spots" of fast development. They reduce the surface tension and improve wetting (giving homogeneous development). The common drawback of their inclusion is foaming and an oily nature which makes them incompatible with some agitated processes. Surfactacts also change development speed since they coat photoresist surfaces and inhibit the dissolution reaction. As such exposure-development times must be adjusted and while contrast is improved, resolution may be lost. See here for more in depth discussion: [http://www.lithoguru.com/scientist/litho_tutor/TUTOR09%20(Winter%2095).pdf The Lithography Tutor: Photoresist Development]<br />
<br />
=Addtional Photolithography Resources=<br />
<br />
*[https://cleanroom.byu.edu/processes#Microfab_PhotoLith BYU Photolithography Guide]<br />
<br />
*[https://kayakuam.com/techreferences/lithography-terms/ Lithography Terminology]<br />
<br />
*[https://cleanroom.byu.edu/definitions Lithography Terminology 2]<br />
<br />
*[https://pages.mtu.edu/~microweb/chap1/ch1-4-1.htm Resolution Limits of Photolithography]</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Optical_Lithography_Resources&diff=2315Optical Lithography Resources2020-03-15T12:53:42Z<p>Dvin: /* SU-8 Recipes */</p>
<hr />
<div>'''[https://www.microchemicals.com/downloads/application_notes.html Trove of lithography application notes from MicroChemicals covering troubleshooting, procedures, techniques, theory]'''<br />
<br />
=KNI Photoresists=<br />
<br />
Photoresists provided by KNI:<br />
<br />
*'''S1805, 1813, 1818''': field standard positive, may be used for liftoff and withstands some acid etching. Designed with lower toxicity materials. ([https://kayakuam.com/wp-content/uploads/2019/09/S1800-G2.pdf Manufacturer Spec Sheet]) Shipley 1800 series 0.5-1.9μm range available. 0.5-3.2μm available from manufacturer. Suitable for multiple applications but not niche optimized as latter resists.<br />
*'''AZ 5214''': exposable as positive and image reversal negative. Optimized for liftoff processes with negative sidewall profile. Structure is stable to 130°C after postbake. 1-2μm thickness ([https://www.microchemicals.com/micro/tds_az_nlof2000_series.pdf Manufacturer Spec Sheet])<br />
*'''AZ 9245, 9260''': Intended for thick positive structures 4-20μm. Lower optical absorption and sensitivity permits tall structures but development is slow. ([https://www.microchemicals.com/products/photoresists/az_9260.html Product Page])<br />
*'''AZ nLof 2020, 2035, 2070''': Also optimized for liftoff processes but thicker than 5214 at 2-7μm spinnable. Structures can be made stable to 250°C. High chemical stability, e-beam exposable, but more difficult to remove. ([https://www.microchemicals.com/products/photoresists/az_nlof_2020.html Product Page])<br />
*'''AZ 3330-F''': medium resolution resist, high thermal stability, optimized for metal RIE etch or plating process environments. 1.0-5.0µm spinnable ([http://www.imicromaterials.com/index.php/products/ig-line-photoresists/az-3300-series Product Page])<br />
*'''AZ 4620''': improved surface adhesion for etching and plating applications, photosensitivity is broad and low, spinnable to 6 - 20 µm.([https://www.microchemicals.com/products/photoresists/az_p4620.html Product Page])<br />
<br />
SU8 Photoresists are no longer provided by KNI (SU8 Developer IS provided by KNI):<br />
<br />
<br />
<br />
'''''Reminder of lamp intensities:'''''<br />
<br />
'''Suss 1 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 15 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 25 mW/cm2.<br />
'''Suss 2 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 10 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 15 mW/cm2.<br />
<br />
'''''Reminder of room conditioning:'''''<br />
<br />
* Temperature is specified to 68±1° F in the photolithography and surrounding rooms.<br />
* Humidity is typically 50% in the photolithography room, KNI is specified to 40-70%. Remember that moving resist coated samples to dryer rooms, they will need to rehydrate over some time period.<br />
<br />
==Positive Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | S1813 || Dehydrate on hot plate || 3000rpm || 1.6μm || 115°C 1min || 8-10s || - || - || MF 319 45-60s || - || Suss1 Ch2 || [https://caltech.app.box.com/s/3pa2im5jj1e86rdozwigt8yfnb8fi5k3 Measured 11/19]<br />
|-<br />
| Dehydrate on hot plate || 5000rpm || 1.1μm || 115°C 1min || 8-10s || - || - || MF 319 45-60s || - || Suss1 Ch2 || [https://caltech.app.box.com/s/3pa2im5jj1e86rdozwigt8yfnb8fi5k3 Measured 11/19]<br />
|-<br />
| AZ 5214 || Dehydrate on hot plate || 3500rpm || 1.4μm || 100°C 1min || 25s || - || - || MF319 60s || - || Suss1 Ch1 || [https://caltech.box.com/s/5ls5rk4oanod66pfilsuendthutcmfqu Measured 10/19]<br />
|-<br />
| AZ 9260 || Dehydrate on hot plate || 3000rpm || 7μm || 110°C 145s || 60s || - || - || AZ 400K 1:4 3min || - || Suss1 Ch1 || [https://caltech.box.com/s/xqwbmcj7l4itj6nqp6lbo7h4vexee0tr Measured 1/20]<br />
|}<br />
<br />
==Negative Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | AZ5214 || Dehydrate on hot plate || 2000rpm || 1.8μm || 100°C 1min || 12s || 110°C 45-60s || 40s || MF319 60s || - || Suss1 Ch1 || [https://caltech.box.com/s/5ls5rk4oanod66pfilsuendthutcmfqu Measured 10/19]<br />
|-<br />
| Dehydrate on hot plate || 3500rpm || 1.4μm || 100°C 1min || 9s || 110°C 45-60s || 30s || MF319 60s || - || Suss1 Ch1 || [https://caltech.box.com/s/5ls5rk4oanod66pfilsuendthutcmfqu Measured 10/19]<br />
|-<br />
| nLoF 2070 || Dehydrate on hot plate || 2500rpm || 7um || 110C 90s || 12s || 110C 90s || - || AZ 726 2min || - || Suss1 Ch1 || [https://caltech.app.box.com/file/571703050359 Measured 12/19]<br />
|}<br />
<br />
=Other Photoresists=<br />
<br />
*[https://cleanroom.byu.edu/resistmanufacturers BYU Comprehensive list of photoresists]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes UCSB Photoresist Recipes Page 1]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Contact_Alignment_Recipes UCSB Photoresist Recipes Page 2]<br />
<br />
*[https://cleanroom.byu.edu/photoresists BYU Photoresist Recipes]<br />
<br />
*'''SU-8 2002, 2025, 2075, 2100, 3025, 3050''': epoxy-based negative resist. Optimal for tall high-aspect ratio permanent structures. ([https://kayakuam.com/products/su-8-photoresists/ Manufacturer Spec Sheet ]). Difficult to remove. Spinnable to 1.5-200μm thickness. <br />
<br />
==Non-KNI Photoresist Recipes==<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| SPR 220-7.0 || - || - || - || - || - || - || - || - || - || - || -<br />
|-<br />
|}<br />
<br />
==SU-8 Recipes==<br />
<br />
SU-8 is available in thicknesses ranging from 500nm to 500microns. Remember to use Laurel Spinner 1 and develop in the Wet Chemistry room on the Solvent Bench.<br />
<br />
[https://cleanroom.byu.edu/su8 BYU SU-8 Guide]<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| 2002 || Dehydrate on hot plate || 3000rpm || 1.6μm || 65C 1min 95C 1min || 30s || 65C 1min 95C 1min || SU-8 Developer 60 seconds || Optional || Suss1 Ch1 || -<br />
|-<br />
| 2005 || Dehydrate on hot plate || 3000rpm || 5.2μm || 65C 1min 95C 2min || 40s || 65C 1min 95C 2min || SU-8 Developer 60 seconds || Optional || Suss1 Ch1 || -<br />
|-<br />
| 2015 || Dehydrate on hot plate || 3000rpm || 17μm || 65C 2min 95C 4min || 120s || 65C 1min 95C 3min || SU-8 Developer 180 seconds || Optional || Suss1 Ch1 || -<br />
|}<br />
<br />
=KNI Developers=<br />
<br />
These developers can be used on the Develop Bench in the Optical Lithography room or on the BASE Bench in the Wet Chemistry room:<br />
<br />
*'''AZ 726 MIF''': 2.38% TMAH-based, pre-diluted (ready-to-use) and slightly further diluted only when the application requires it. Contains surfactants to improve development uniformity, so avoid stirring. MIF identifies the developer as 'Metal Ion Free' as it does not contain potassium as in KOH-based developers, it is based on TMAH, an ammonium salt, which prevents metal contamination of semiconductors. 726 is a recommended developer for almost all AZ resists [https://www.microchemicals.com/technical_information/development_photoresist.pdf MicroChemicals Development Application Note]<br />
<br />
*'''Microposit MF 319''': (Metal-Free) TMAH: 2.45%, Polyalkylene glycol <1%, pH: 13. Paired to Shipley/Microposit 1800 series resists, S1805,S1813,S1818 [https://cpb-us-e1.wpmucdn.com/sites.usc.edu/dist/a/194/files/2018/07/MF-319-Developer-1iqbk7y.pdf MSDS]<br />
<br />
*'''Microposit CD-26''': TMAH <5.0 % , pH 13, Also 1800 series targeted, no additional surfactants.<br />
<br />
*'''AZ 400K''': KOH-based. "The recommended dilutions for the AZ® 400 K or AZ® 351 B for most of the processes are developer concentrate : Water = 1: . For very thick resist films, up to a 1:3 ratio can be applied [with lower contrast], with a very fine (sub-µm) structures, a 1:5 or 1:6 ratio can support a high resolution using thin resist films." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note] Users can adjust dilution for accuracy and length of time they will tolerate.<br />
**Critical note on KOH use: "Incompatibilities between MIC and MIF Developers Even small traces of TMAH-based metal ion-free developers such as the AZ® 326 MIF, 726 MIF or 826 MIF) can significantly reduce the development rate of metal ion-containing developers (such as the AZ® 400K or 351B). If both types of developers are used, extremely clean work is to be ensured to prevent mutual contamination even in the ppm range, such as in the dispensing system or developer containers." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note]<br />
<br />
*'''Microposit 2401''': Legacy developer<br />
<br />
<br />
SU-8 developer can ONLY be used on the SOLVENT Bench in the Wet Chemistry room:<br />
<br />
*'''SU-8 Developer''': (Organic Solvent Solution) 1-Methoxy-2-propanol acetate, >99.5%, Synonym propylene glycol monomethyl ether acetate 2-Methoxy-1-propanol acetate, <0.5%. [https://caltech.app.box.com/s/avqs14mt28i1epom0n6w37p55rjqvkbe MSDS] Paired to SU8 series resists. <br />
<br />
<br />
===Surfactants===<br />
<br />
Surfactants were developed and added in the 1980s to photoresist developers to combat photoresists' hydrophobic surfaces which cause "hot spots" of fast development. They reduce the surface tension and improve wetting (giving homogeneous development). The common drawback of their inclusion is foaming and an oily nature which makes them incompatible with some agitated processes. Surfactacts also change development speed since they coat photoresist surfaces and inhibit the dissolution reaction. As such exposure-development times must be adjusted and while contrast is improved, resolution may be lost. See here for more in depth discussion: [http://www.lithoguru.com/scientist/litho_tutor/TUTOR09%20(Winter%2095).pdf The Lithography Tutor: Photoresist Development]<br />
<br />
=Addtional Photolithography Resources=<br />
<br />
*[https://cleanroom.byu.edu/processes#Microfab_PhotoLith BYU Photolithography Guide]<br />
<br />
*[https://kayakuam.com/techreferences/lithography-terms/ Lithography Terminology]<br />
<br />
*[https://cleanroom.byu.edu/definitions Lithography Terminology 2]<br />
<br />
*[https://pages.mtu.edu/~microweb/chap1/ch1-4-1.htm Resolution Limits of Photolithography]</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Optical_Lithography_Resources&diff=2181Optical Lithography Resources2020-02-03T18:25:24Z<p>Dvin: /* Positive Photoresist Recipes */</p>
<hr />
<div>'''[https://www.microchemicals.com/downloads/application_notes.html Trove of lithography application notes from MicroChemicals covering troubleshooting, procedures, techniques, theory]'''<br />
<br />
=KNI Photoresists=<br />
<br />
Photoresists provided by KNI:<br />
<br />
*'''S1805, 1813, 1818''': field standard positive, may be used for liftoff and withstands some acid etching. Designed with lower toxicity materials. ([https://kayakuam.com/wp-content/uploads/2019/09/S1800-G2.pdf Manufacturer Spec Sheet]) Shipley 1800 series 0.5-1.9μm range available. 0.5-3.2μm available from manufacturer. Suitable for multiple applications but not niche optimized as latter resists.<br />
*'''AZ 5214''': exposable as positive and image reversal negative. Optimized for liftoff processes with negative sidewall profile. Structure is stable to 130°C after postbake. 1-2μm thickness ([https://www.microchemicals.com/micro/tds_az_nlof2000_series.pdf Manufacturer Spec Sheet])<br />
*'''AZ 9245, 9260''': Intended for thick positive structures 4-20μm. Lower optical absorption and sensitivity permits tall structures but development is slow. ([https://www.microchemicals.com/products/photoresists/az_9260.html Product Page])<br />
*'''AZ nLof 2020, 2035, 2070''': Also optimized for liftoff processes but thicker than 5214 at 2-7μm spinnable. Structures can be made stable to 250°C. High chemical stability, e-beam exposable, but more difficult to remove. ([https://www.microchemicals.com/products/photoresists/az_nlof_2020.html Product Page])<br />
*'''AZ 3330-F''': medium resolution resist, high thermal stability, optimized for metal RIE etch or plating process environments. 1.0-5.0µm spinnable ([http://www.imicromaterials.com/index.php/products/ig-line-photoresists/az-3300-series Product Page])<br />
*'''AZ 4620''': improved surface adhesion for etching and plating applications, photosensitivity is broad and low, spinnable to 6 - 20 µm.([https://www.microchemicals.com/products/photoresists/az_p4620.html Product Page])<br />
<br />
SU8 Photoresists are no longer provided by KNI (SU8 Developer IS provided by KNI):<br />
<br />
<br />
<br />
'''''Reminder of lamp intensities:'''''<br />
<br />
'''Suss 1 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 15 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 25 mW/cm2.<br />
'''Suss 2 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 10 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 15 mW/cm2.<br />
<br />
'''''Reminder of room conditioning:'''''<br />
<br />
* Temperature is specified to 68±1° F in the photolithography and surrounding rooms.<br />
* Humidity is typically 50% in the photolithography room, KNI is specified to 40-70%. Remember that moving resist coated samples to dryer rooms, they will need to rehydrate over some time period.<br />
<br />
==Positive Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | S1813 || Dehydrate on hot plate || 3000rpm || 1.6μm || 115°C 1min || 8-10s || - || - || MF 319 45-60s || - || Suss1 Ch2 || [https://caltech.app.box.com/s/3pa2im5jj1e86rdozwigt8yfnb8fi5k3 Measured 11/19]<br />
|-<br />
| Dehydrate on hot plate || 5000rpm || 1.1μm || 115°C 1min || 8-10s || - || - || MF 319 45-60s || - || Suss1 Ch2 || [https://caltech.app.box.com/s/3pa2im5jj1e86rdozwigt8yfnb8fi5k3 Measured 11/19]<br />
|-<br />
| AZ 5214 || Dehydrate on hot plate || 3500rpm || 1.4μm || 100°C 1min || 25s || - || - || MF319 60s || - || Suss1 Ch1 || [https://caltech.box.com/s/5ls5rk4oanod66pfilsuendthutcmfqu Measured 10/19]<br />
|-<br />
| AZ 9260 || Dehydrate on hot plate || 3000rpm || 7μm || 110°C 145s || 60s || - || - || AZ 400K 1:4 3min || - || Suss1 Ch1 || [https://caltech.box.com/s/xqwbmcj7l4itj6nqp6lbo7h4vexee0tr Measured 1/20]<br />
|}<br />
<br />
==Negative Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | AZ5214 || Dehydrate on hot plate || 2000rpm || 1.8μm || 100°C 1min || 12s || 110°C 45-60s || 40s || MF319 60s || - || Suss1 Ch1 || [https://caltech.box.com/s/5ls5rk4oanod66pfilsuendthutcmfqu Measured 10/19]<br />
|-<br />
| Dehydrate on hot plate || 3500rpm || 1.4μm || 100°C 1min || 9s || 110°C 45-60s || 30s || MF319 60s || - || Suss1 Ch1 || [https://caltech.box.com/s/5ls5rk4oanod66pfilsuendthutcmfqu Measured 10/19]<br />
|-<br />
| nLoF 2070 || Dehydrate on hot plate || 2500rpm || 7um || 110C 90s || 12s || 110C 90s || - || AZ 726 2min || - || Suss1 Ch1 || [https://caltech.app.box.com/file/571703050359 Measured 12/19]<br />
|}<br />
<br />
=Other Photoresists=<br />
<br />
*[https://cleanroom.byu.edu/resistmanufacturers BYU Comprehensive list of photoresists]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes UCSB Photoresist Recipes Page 1]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Contact_Alignment_Recipes UCSB Photoresist Recipes Page 2]<br />
<br />
*[https://cleanroom.byu.edu/photoresists BYU Photoresist Recipes]<br />
<br />
*'''SU-8 2002, 2025, 2075, 2100, 3025, 3050''': epoxy-based negative resist. Optimal for tall high-aspect ratio permanent structures. ([https://kayakuam.com/products/su-8-photoresists/ Manufacturer Spec Sheet ]). Difficult to remove. Spinnable to 1.5-200μm thickness. <br />
<br />
==Non-KNI Photoresist Recipes==<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| SPR 220-7.0 || - || - || - || - || - || - || - || - || - || - || -<br />
|-<br />
|}<br />
<br />
==SU-8 Recipes==<br />
<br />
SU-8 is available in thicknesses ranging from 500nm to 500microns. Remember to use Laurel Spinner 1 and develop in the Wet Chemistry room on the Solvent Bench.<br />
<br />
[https://cleanroom.byu.edu/su8 BYU SU-8 Guide]<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| 2002 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || -<br />
|-<br />
| 2025 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || -<br />
|-<br />
| 2100 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || -<br />
|}<br />
<br />
=KNI Developers=<br />
<br />
These developers can be used on the Develop Bench in the Optical Lithography room or on the BASE Bench in the Wet Chemistry room:<br />
<br />
*'''AZ 726 MIF''': 2.38% TMAH-based, pre-diluted (ready-to-use) and slightly further diluted only when the application requires it. Contains surfactants to improve development uniformity, so avoid stirring. MIF identifies the developer as 'Metal Ion Free' as it does not contain potassium as in KOH-based developers, it is based on TMAH, an ammonium salt, which prevents metal contamination of semiconductors. 726 is a recommended developer for almost all AZ resists [https://www.microchemicals.com/technical_information/development_photoresist.pdf MicroChemicals Development Application Note]<br />
<br />
*'''Microposit MF 319''': (Metal-Free) TMAH: 2.45%, Polyalkylene glycol <1%, pH: 13. Paired to Shipley/Microposit 1800 series resists, S1805,S1813,S1818 [https://cpb-us-e1.wpmucdn.com/sites.usc.edu/dist/a/194/files/2018/07/MF-319-Developer-1iqbk7y.pdf MSDS]<br />
<br />
*'''Microposit CD-26''': TMAH <5.0 % , pH 13, Also 1800 series targeted, no additional surfactants.<br />
<br />
*'''AZ 400K''': KOH-based. "The recommended dilutions for the AZ® 400 K or AZ® 351 B for most of the processes are developer concentrate : Water = 1: . For very thick resist films, up to a 1:3 ratio can be applied [with lower contrast], with a very fine (sub-µm) structures, a 1:5 or 1:6 ratio can support a high resolution using thin resist films." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note] Users can adjust dilution for accuracy and length of time they will tolerate.<br />
**Critical note on KOH use: "Incompatibilities between MIC and MIF Developers Even small traces of TMAH-based metal ion-free developers such as the AZ® 326 MIF, 726 MIF or 826 MIF) can significantly reduce the development rate of metal ion-containing developers (such as the AZ® 400K or 351B). If both types of developers are used, extremely clean work is to be ensured to prevent mutual contamination even in the ppm range, such as in the dispensing system or developer containers." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note]<br />
<br />
*'''Microposit 2401''': Legacy developer<br />
<br />
<br />
SU-8 developer can ONLY be used on the SOLVENT Bench in the Wet Chemistry room:<br />
<br />
*'''SU-8 Developer''': (Organic Solvent Solution) 1-Methoxy-2-propanol acetate, >99.5%, Synonym propylene glycol monomethyl ether acetate 2-Methoxy-1-propanol acetate, <0.5%. [https://caltech.app.box.com/s/avqs14mt28i1epom0n6w37p55rjqvkbe MSDS] Paired to SU8 series resists. <br />
<br />
<br />
===Surfactants===<br />
<br />
Surfactants were developed and added in the 1980s to photoresist developers to combat photoresists' hydrophobic surfaces which cause "hot spots" of fast development. They reduce the surface tension and improve wetting (giving homogeneous development). The common drawback of their inclusion is foaming and an oily nature which makes them incompatible with some agitated processes. Surfactacts also change development speed since they coat photoresist surfaces and inhibit the dissolution reaction. As such exposure-development times must be adjusted and while contrast is improved, resolution may be lost. See here for more in depth discussion: [http://www.lithoguru.com/scientist/litho_tutor/TUTOR09%20(Winter%2095).pdf The Lithography Tutor: Photoresist Development]<br />
<br />
=Addtional Photolithography Resources=<br />
<br />
*[https://cleanroom.byu.edu/processes#Microfab_PhotoLith BYU Photolithography Guide]<br />
<br />
*[https://kayakuam.com/techreferences/lithography-terms/ Lithography Terminology]<br />
<br />
*[https://cleanroom.byu.edu/definitions Lithography Terminology 2]<br />
<br />
*[https://pages.mtu.edu/~microweb/chap1/ch1-4-1.htm Resolution Limits of Photolithography]</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Optical_Lithography_Resources&diff=2180Optical Lithography Resources2020-02-03T16:28:41Z<p>Dvin: /* Positive Photoresist Recipes */</p>
<hr />
<div>'''[https://www.microchemicals.com/downloads/application_notes.html Trove of lithography application notes from MicroChemicals covering troubleshooting, procedures, techniques, theory]'''<br />
<br />
=KNI Photoresists=<br />
<br />
Photoresists provided by KNI:<br />
<br />
*'''S1805, 1813, 1818''': field standard positive, may be used for liftoff and withstands some acid etching. Designed with lower toxicity materials. ([https://kayakuam.com/wp-content/uploads/2019/09/S1800-G2.pdf Manufacturer Spec Sheet]) Shipley 1800 series 0.5-1.9μm range available. 0.5-3.2μm available from manufacturer. Suitable for multiple applications but not niche optimized as latter resists.<br />
*'''AZ 5214''': exposable as positive and image reversal negative. Optimized for liftoff processes with negative sidewall profile. Structure is stable to 130°C after postbake. 1-2μm thickness ([https://www.microchemicals.com/micro/tds_az_nlof2000_series.pdf Manufacturer Spec Sheet])<br />
*'''AZ 9245, 9260''': Intended for thick positive structures 4-20μm. Lower optical absorption and sensitivity permits tall structures but development is slow. ([https://www.microchemicals.com/products/photoresists/az_9260.html Product Page])<br />
*'''AZ nLof 2020, 2035, 2070''': Also optimized for liftoff processes but thicker than 5214 at 2-7μm spinnable. Structures can be made stable to 250°C. High chemical stability, e-beam exposable, but more difficult to remove. ([https://www.microchemicals.com/products/photoresists/az_nlof_2020.html Product Page])<br />
*'''AZ 3330-F''': medium resolution resist, high thermal stability, optimized for metal RIE etch or plating process environments. 1.0-5.0µm spinnable ([http://www.imicromaterials.com/index.php/products/ig-line-photoresists/az-3300-series Product Page])<br />
*'''AZ 4620''': improved surface adhesion for etching and plating applications, photosensitivity is broad and low, spinnable to 6 - 20 µm.([https://www.microchemicals.com/products/photoresists/az_p4620.html Product Page])<br />
<br />
SU8 Photoresists are no longer provided by KNI (SU8 Developer IS provided by KNI):<br />
<br />
<br />
<br />
'''''Reminder of lamp intensities:'''''<br />
<br />
'''Suss 1 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 15 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 25 mW/cm2.<br />
'''Suss 2 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 10 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 15 mW/cm2.<br />
<br />
'''''Reminder of room conditioning:'''''<br />
<br />
* Temperature is specified to 68±1° F in the photolithography and surrounding rooms.<br />
* Humidity is typically 50% in the photolithography room, KNI is specified to 40-70%. Remember that moving resist coated samples to dryer rooms, they will need to rehydrate over some time period.<br />
<br />
==Positive Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | S1813 || Dehydrate on hot plate || 3000rpm || 1.6μm || 115°C 1min || 8-10s || - || - || MF 319 45-60s || - || Suss1 Ch2 || [https://caltech.app.box.com/s/3pa2im5jj1e86rdozwigt8yfnb8fi5k3 Measured 11/19]<br />
|-<br />
| Dehydrate on hot plate || 5000rpm || 1.1μm || 115°C 1min || 8-10s || - || - || MF 319 45-60s || - || Suss1 Ch2 || [https://caltech.app.box.com/s/3pa2im5jj1e86rdozwigt8yfnb8fi5k3 Measured 11/19]<br />
|-<br />
| AZ 5214 || Dehydrate on hot plate || 3500rpm || 1.4μm || 100°C 1min || 25s || - || - || MF319 60s || - || Suss1 Ch1 || [https://caltech.box.com/s/5ls5rk4oanod66pfilsuendthutcmfqu Measured 10/19]<br />
|-<br />
| AZ 9260 || Dehydrate on hot plate || 3000rpm || 7μm || 110°C 145s || 60s || - || - || AZ 400K 1:4 3min || - || Suss1 Ch1 || Measured 1/20<br />
|}<br />
<br />
==Negative Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | AZ5214 || Dehydrate on hot plate || 2000rpm || 1.8μm || 100°C 1min || 12s || 110°C 45-60s || 40s || MF319 60s || - || Suss1 Ch1 || [https://caltech.box.com/s/5ls5rk4oanod66pfilsuendthutcmfqu Measured 10/19]<br />
|-<br />
| Dehydrate on hot plate || 3500rpm || 1.4μm || 100°C 1min || 9s || 110°C 45-60s || 30s || MF319 60s || - || Suss1 Ch1 || [https://caltech.box.com/s/5ls5rk4oanod66pfilsuendthutcmfqu Measured 10/19]<br />
|-<br />
| nLoF 2070 || Dehydrate on hot plate || 2500rpm || 7um || 110C 90s || 12s || 110C 90s || - || AZ 726 2min || - || Suss1 Ch1 || [https://caltech.app.box.com/file/571703050359 Measured 12/19]<br />
|}<br />
<br />
=Other Photoresists=<br />
<br />
*[https://cleanroom.byu.edu/resistmanufacturers BYU Comprehensive list of photoresists]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes UCSB Photoresist Recipes Page 1]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Contact_Alignment_Recipes UCSB Photoresist Recipes Page 2]<br />
<br />
*[https://cleanroom.byu.edu/photoresists BYU Photoresist Recipes]<br />
<br />
*'''SU-8 2002, 2025, 2075, 2100, 3025, 3050''': epoxy-based negative resist. Optimal for tall high-aspect ratio permanent structures. ([https://kayakuam.com/products/su-8-photoresists/ Manufacturer Spec Sheet ]). Difficult to remove. Spinnable to 1.5-200μm thickness. <br />
<br />
==Non-KNI Photoresist Recipes==<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| SPR 220-7.0 || - || - || - || - || - || - || - || - || - || - || -<br />
|-<br />
|}<br />
<br />
==SU-8 Recipes==<br />
<br />
SU-8 is available in thicknesses ranging from 500nm to 500microns. Remember to use Laurel Spinner 1 and develop in the Wet Chemistry room on the Solvent Bench.<br />
<br />
[https://cleanroom.byu.edu/su8 BYU SU-8 Guide]<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| 2002 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || -<br />
|-<br />
| 2025 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || -<br />
|-<br />
| 2100 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || -<br />
|}<br />
<br />
=KNI Developers=<br />
<br />
These developers can be used on the Develop Bench in the Optical Lithography room or on the BASE Bench in the Wet Chemistry room:<br />
<br />
*'''AZ 726 MIF''': 2.38% TMAH-based, pre-diluted (ready-to-use) and slightly further diluted only when the application requires it. Contains surfactants to improve development uniformity, so avoid stirring. MIF identifies the developer as 'Metal Ion Free' as it does not contain potassium as in KOH-based developers, it is based on TMAH, an ammonium salt, which prevents metal contamination of semiconductors. 726 is a recommended developer for almost all AZ resists [https://www.microchemicals.com/technical_information/development_photoresist.pdf MicroChemicals Development Application Note]<br />
<br />
*'''Microposit MF 319''': (Metal-Free) TMAH: 2.45%, Polyalkylene glycol <1%, pH: 13. Paired to Shipley/Microposit 1800 series resists, S1805,S1813,S1818 [https://cpb-us-e1.wpmucdn.com/sites.usc.edu/dist/a/194/files/2018/07/MF-319-Developer-1iqbk7y.pdf MSDS]<br />
<br />
*'''Microposit CD-26''': TMAH <5.0 % , pH 13, Also 1800 series targeted, no additional surfactants.<br />
<br />
*'''AZ 400K''': KOH-based. "The recommended dilutions for the AZ® 400 K or AZ® 351 B for most of the processes are developer concentrate : Water = 1: . For very thick resist films, up to a 1:3 ratio can be applied [with lower contrast], with a very fine (sub-µm) structures, a 1:5 or 1:6 ratio can support a high resolution using thin resist films." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note] Users can adjust dilution for accuracy and length of time they will tolerate.<br />
**Critical note on KOH use: "Incompatibilities between MIC and MIF Developers Even small traces of TMAH-based metal ion-free developers such as the AZ® 326 MIF, 726 MIF or 826 MIF) can significantly reduce the development rate of metal ion-containing developers (such as the AZ® 400K or 351B). If both types of developers are used, extremely clean work is to be ensured to prevent mutual contamination even in the ppm range, such as in the dispensing system or developer containers." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note]<br />
<br />
*'''Microposit 2401''': Legacy developer<br />
<br />
<br />
SU-8 developer can ONLY be used on the SOLVENT Bench in the Wet Chemistry room:<br />
<br />
*'''SU-8 Developer''': (Organic Solvent Solution) 1-Methoxy-2-propanol acetate, >99.5%, Synonym propylene glycol monomethyl ether acetate 2-Methoxy-1-propanol acetate, <0.5%. [https://caltech.app.box.com/s/avqs14mt28i1epom0n6w37p55rjqvkbe MSDS] Paired to SU8 series resists. <br />
<br />
<br />
===Surfactants===<br />
<br />
Surfactants were developed and added in the 1980s to photoresist developers to combat photoresists' hydrophobic surfaces which cause "hot spots" of fast development. They reduce the surface tension and improve wetting (giving homogeneous development). The common drawback of their inclusion is foaming and an oily nature which makes them incompatible with some agitated processes. Surfactacts also change development speed since they coat photoresist surfaces and inhibit the dissolution reaction. As such exposure-development times must be adjusted and while contrast is improved, resolution may be lost. See here for more in depth discussion: [http://www.lithoguru.com/scientist/litho_tutor/TUTOR09%20(Winter%2095).pdf The Lithography Tutor: Photoresist Development]<br />
<br />
=Addtional Photolithography Resources=<br />
<br />
*[https://cleanroom.byu.edu/processes#Microfab_PhotoLith BYU Photolithography Guide]<br />
<br />
*[https://kayakuam.com/techreferences/lithography-terms/ Lithography Terminology]<br />
<br />
*[https://cleanroom.byu.edu/definitions Lithography Terminology 2]<br />
<br />
*[https://pages.mtu.edu/~microweb/chap1/ch1-4-1.htm Resolution Limits of Photolithography]</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Wet_Chemistry&diff=2140Wet Chemistry2020-01-11T23:32:55Z<p>Dvin: </p>
<hr />
<div>{{InstrumentInfoboxOneImage|<br />
|InstrumentName = Wet Chemistry<br />
|HeaderColor = #E6E7E8<br />
|ImageOne = Wet-Chemistry_Solvents-and-HF.jpg<br />
|ImageTwo = <br />
|InstrumentType = [[Equipment_List#Wet Chemistry|Wet Chemistry]]<br />
|RoomLocation = B211 Steele<br />
|LabPhone = 626-395-1538<br />
|PrimaryStaff = [[Bert Mendoza]]<br />
|StaffEmail = bertm@caltech.edu<br />
|StaffPhone = 626-395-4075<br />
|Manufacturer = NA<br />
|Model = NA<br />
|Techniques = Wet Chemical Processing:<br>Acids, Bases, Solvents,<br>and Electroplating<br />
|EmailList = kni-chemistry@caltech.edu<br />
|EmailListName = Chemistry<br />
}}<br />
==Facilities==<br />
<br />
*Potassium Hydroxide (KOH) Bath<br />
*Bottle Washer<br />
<br />
<br />
'''Available Benches:'''<br />
* Acids<br />
* Hydrofluoric Acid (HF)<br />
* Bases<br />
* Solvents<br />
* Electroplating<br />
<br />
== Chemistry Procedures and Safety ==<br />
<br />
* [[Wet Chemistry Safety | Lab Chemical Safety Procedures]] - Guides for PPE, equipment usage, chemical handling, storage and transfer.<br />
<br />
* [[Wet Chemistry Resources | Wet Chemistry Resources Page]] - Contains fabrication recipes and procedures<br />
<br />
* [https://www.chemicalsafety.com/sds-search Search for Safety Data Sheets (SDS)]<br />
<br />
* [[Lab_Rules_&_Safety | Lab Rules & Safety]] - KNI cleanroom safety handbook<br />
<br />
== Chemical Lists ==<br />
<br />
* '''[[Provided_Chemicals | Chemicals Provided by the KNI with typical SDS]]'''<br />
<br />
* '''[[Safety Data Sheets (SDS)#Liquids | Approved Chemicals]]'''</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Wet_Chemistry_Safety&diff=2139Wet Chemistry Safety2020-01-11T23:32:02Z<p>Dvin: /* Buddy System */</p>
<hr />
<div>==Requesting New Chemicals==<br />
<br />
==PPE Overview==<br />
<br />
Refer to manual<br />
<br />
==Hazardous Waste Handling and Labeling==<br />
<br />
Refer to manual<br />
<br />
==Decanting Chemicals==<br />
<br />
==Hot Plate Rules==<br />
<br />
When using hot plates, check that your beaker is both suitable for hot plate use and smaller than the area of the hot plate.<br />
<br />
Never use a Teflon or plastic beaker on a hot plate.<br />
<br />
Always monitor the temperature of the chemicals on a hot plate with the appropriate thermometer.<br />
<br />
==Buddy System==<br />
<br />
'''The laboratory is open to qualified users both day and night, weekdays and weekends.''' Certain instruments and procedures may, however, be restricted to the normal work day, or only allowed in the presence of a staff member. In general, a“buddy” is another knowledgeable user within the facility who can and will watch out for you in case of trouble. Laboratory “buddies” must of necessity communicate with each other to be effective. The use of chemicals in particular is restricted to the buddy system after normal hours, i.e. all time outside 8 a.m.-5 p.m. normal workdays. <br />
<br />
You may not wet etch, mix chemicals, or dispose of waste without another user in the area. '''A “visitor” is not considered a knowledgeable user for the purpose of the “buddy” system. The buddy system particularly applies to all wet chemical use during off hours.''' Additional procedures may apply to specific instruments. You will be advised of these when you are trained on each instrument.<br />
<br />
Each piece of equipment will have a training requirement before a user is permitted to use it without supervision. A probationary period of operation, consisting of a minimum of fifteen (15) hours of daytime use without user-caused problems, will then be required before the user will be allowed to operate the equipment off-hours. If a user-caused incident occurs after that, the individual will need to obtain additional training (amount at the discretion of the KNI staff) and repeat the probation on the equipment during daytime hours M-F to re-gain the off-hour privileges.<br />
<br />
==Secondary Containment==<br />
<br />
==Other Best Practices==</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Wet_Chemistry_Safety&diff=2138Wet Chemistry Safety2020-01-11T23:30:59Z<p>Dvin: /* Buddy System */</p>
<hr />
<div>==Requesting New Chemicals==<br />
<br />
==PPE Overview==<br />
<br />
Refer to manual<br />
<br />
==Hazardous Waste Handling and Labeling==<br />
<br />
Refer to manual<br />
<br />
==Decanting Chemicals==<br />
<br />
==Hot Plate Rules==<br />
<br />
When using hot plates, check that your beaker is both suitable for hot plate use and smaller than the area of the hot plate.<br />
<br />
Never use a Teflon or plastic beaker on a hot plate.<br />
<br />
Always monitor the temperature of the chemicals on a hot plate with the appropriate thermometer.<br />
<br />
==Buddy System==<br />
<br />
The laboratory is open to qualified users both day and night, weekdays and weekends. Certain instruments and procedures may, however, be restricted to the normal work day, or only allowed in the presence of a staff member. In general, a“buddy” is another knowledgeable user within the facility who can and will watch out for you in case of trouble. Laboratory “buddies” must of necessity communicate with each other to be effective. The use of chemicals in particular is restricted to the buddy system after normal hours, i.e. all time outside 8 a.m.-5 p.m. normal workdays. <br />
<br />
You may not wet etch, mix chemicals, or dispose of waste without another user in the area.A “visitor” is not considered a knowledgeable user for the purpose of the “buddy” system. The buddy system particularly applies to all wet chemical use during off hours. Additional procedures may apply to specific instruments. You will be advised of these when you are trained on each instrument.<br />
<br />
Each piece of equipment will have a training requirement before a user is permitted to use it without supervision. A probationary period of operation, consisting of a minimum of fifteen (15) hours of daytime use without user-caused problems, will then be required before the user will be allowed to operate the equipment off-hours. If a user-caused incident occurs after that, the individual will need to obtain additional training (amount at the discretion of the KNI staff) and repeat the probation on the equipment during daytime hours M-F to re-gain the off-hour privileges.<br />
<br />
==Secondary Containment==<br />
<br />
==Other Best Practices==</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Wet_Chemistry_Safety&diff=2137Wet Chemistry Safety2020-01-11T22:55:18Z<p>Dvin: /* Hot Plate Rules */</p>
<hr />
<div>==Requesting New Chemicals==<br />
<br />
==PPE Overview==<br />
<br />
Refer to manual<br />
<br />
==Hazardous Waste Handling and Labeling==<br />
<br />
Refer to manual<br />
<br />
==Decanting Chemicals==<br />
<br />
==Hot Plate Rules==<br />
<br />
When using hot plates, check that your beaker is both suitable for hot plate use and smaller than the area of the hot plate.<br />
<br />
Never use a Teflon or plastic beaker on a hot plate.<br />
<br />
Always monitor the temperature of the chemicals on a hot plate with the appropriate thermometer.<br />
<br />
==Buddy System==<br />
<br />
==Secondary Containment==<br />
<br />
==Other Best Practices==</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Equipment_List&diff=2136Equipment List2020-01-11T22:42:23Z<p>Dvin: /* Wet Chemistry */</p>
<hr />
<div>== Lithography ==<br />
===== Electron Beam Lithography =====<br />
* [[EBPG 5200: 100 kV Electron Beam Lithography | Electron Beam Pattern Generator: Raith EBPG 5200 (100 kV)]]<br />
* [[EBPG 5000+: 100 kV Electron Beam Lithography | Electron Beam Pattern Generator: Raith EBPG 5000+ (100 kV)]]<br />
* [[Quanta 200F: SEM, ESEM, Lithography & Probe Station | Nanometer Pattern Generation System: Thermo Fisher Quanta 200F SEM with NPGS (1-30 kV)]]<br />
* [[Tecnai TF-20: 200 kV TEM, STEM, EDS, EELS, EFTEM & Lithography | Nanometer Pattern Generation System: Thermo Fisher Tecnai TF-20 S/TEM with NPGS (80-200 kV)]]<br />
===== Ion Beam Lithography =====<br />
* [[ORION NanoFab: Helium, Neon & Gallium FIB | He/Ne/Ga-FIB: Zeiss ORION NanoFab with Raith ELPHY MultiBeam Pattern Generator (5-40 kV He & Ne, 1-30 kV Ga)]]<br />
===== Optical Lithography =====<br />
* [[Contact Mask Aligners: MA6 & MA6/BA6 | Contact Mask Aligners: Suss MicroTec models MA6 & MA6/BA6]]<br />
* [[Wafer Stepper | i-Line Wafer Stepper: GCA model 6300]]<br />
* [[DWL-66: Direct-Write Laser System | Direct-Write Laser System: Heidelberg Instruments DWL-66]]<br />
* [[Nanoscribe PPGT: Microscale 3D Printer | Two-Photon Lithography (aka Microscale 3D Printing): Nanoscribe Photonic Professional GT]]<br />
* [[Optical Lithography Resources]]<br />
<br />
== Deposition ==<br />
===== Evaporation =====<br />
* [[Labline: Electron Beam Evaporator | Metals (Al, Au, Pt & Ti): Kurt J Lesker Labline Electron Beam Evaporator]]<br />
* [[CHA: Electron Beam Evaporator | Metals & Oxides: CHA Industries Mark 40 Electron Beam Evaporator]]<br />
* [[Carbon Evaporator | Carbon: Leica EM ACE600 Carbon Evaporator]]<br />
===== Sputtering =====<br />
* [[ATC Orion 8: Dielectric Sputter System | Dielectric Sputter System: AJA International ATC Orion 8]]<br />
* [[ATC Orion 8: Chalcogenide Sputter System | Chalcogenide Sputter System: AJA International ATC Orion 8]]<br />
<br />
===== Chemical Vapor Deposition (CVD) =====<br />
* [[FlexAL II: Atomic Layer Deposition (ALD) | Atomic Layer Deposition (ALD): Oxford Instruments FlexAL II]]<br />
* [[Plasma-Enhanced Chemical Vapor Deposition (PECVD) | Plasma-Enhanced Chemical Vapor Deposition (PECVD): Oxford Instruments System 100]]<br />
===== Dielectric Packaging / Moisture Barrier =====<br />
* [[Parylene Coater | Parylene Coater: Para Tech LabTop 3000]]<br />
<br />
== Etching ==<br />
===== Dry Etching =====<br />
* [[DRIE: Bosch & Cryo ICP-RIE for Silicon | Silicon Etcher: Oxford Instruments DRIE System 100 Bosch & Cryo ICP-RIE]]<br />
* [[ICP-RIE: III-V, Metal & Silicon Etcher | III-V Material, Metal & Silicon Etcher: Oxford Instruments System 100 ICP-RIE]]<br />
* [[ICP-RIE: Dielectric Etcher | Dielectric Material Etcher: Oxford Instruments Dielectric System 100 ICP-RIE]]<br />
* [[Dual Chamber RIE: Silicon, III-V Material & Organics Etcher | Silicon, III-V Material & Organics Etcher: Plasma-Therm Dual Chamber RIE]]<br />
* [[Tergeo Plus ICP- & CCP-RIE: Oxygen & Argon Plasma Cleaner | Oxygen & Argon Plasma Cleaner: PIE Scientific Tergeo Plus ICP- & CCP-RIE]]<br />
* [[XeF2 Etcher for Silicon | XeF<sub>2</sub> Etcher for Silicon]]<br />
<br />
===== Wet Etching =====<br />
* [[Wet Chemistry | Available Wet Etching Techniques]]<br />
<br />
== Microscopy ==<br />
===== Guide to Choosing KNI SEMs & FIBs =====<br />
*[[Guide to Choosing KNI SEMs & FIBs | Consult this guide for help in choosing the best SEMs and FIBs for your work]]<br />
<br />
===== Focused Ion Beam (FIB) Systems =====<br />
* [[ORION NanoFab: Helium, Neon & Gallium FIB | Helium, Neon & Gallium FIB: Zeiss ORION NanoFab]]<br />
* [[Nova 600 NanoLab: SEM, Ga-FIB, GIS & Omniprobe | SEM, Ga-FIB, GIS & Omniprobe: Thermo Fisher Nova 600 NanoLab]]<br />
===== Scanning Electron Microscopes (SEMs) =====<br />
* [[Nova 200 NanoLab: SEM, EDS & WDS | SEM, EDS & WDS: Thermo Fisher Nova 200 NanoLab]]<br />
* [[Sirion: SEM & EDS | SEM & EDS: Thermo Fisher Sirion]]<br />
* [[Quanta 200F: SEM, ESEM, Lithography & Probe Station | SEM, ESEM, Lithography & Probe Station: Thermo Fisher Quanta 200F]]<br />
* [[Nova 600 NanoLab: SEM, Ga-FIB, GIS & Omniprobe|SEM, Ga-FIB, GIS & Omniprobe: Thermo Fisher Nova 600 NanoLab]]<br />
===== Transmission Electron Microscopes (TEMs) =====<br />
* [[Tecnai TF-30: 300 kV TEM, STEM, EDS & HAADF | TEM, STEM, EDS & HAADF: Thermo Fisher Tecnai TF-30 (50-300 kV)]]<br />
* [[Tecnai TF-20: 200 kV TEM, STEM, EDS, EELS, EFTEM & Lithography | TEM, STEM, EDS, EELS, EFTEM & Lithography: Thermo Fisher Tecnai TF-20 (40-200 kV)]]<br />
<br />
===== Scanning Probe Microscopes =====<br />
* [[Dimension Icon: Atomic Force Microscope (AFM) | Atomic Force Microscope (AFM): Bruker Dimension Icon]]<br />
* [[Dektak 3ST: Profilometer | Profilometer: Veeco Dektak 3ST]]<br />
<br />
===== Optical Characterization =====<br />
* [[Spectroscopic Ellipsometer | Spectroscopic Ellipsometer: Woolam M-2000]]<br />
* [[Light Microscope with Spectroscopic Reflectometer | Light Microscope: Olympus BX51M with Filmetrics Spectroscopic Reflectometer]]<br />
* [[Fluorescence Microscope | Fluorescence Microscope: Olympus IX81]]<br />
===== Sample Preparation for Microscopy =====<br />
* [[Carbon Evaporator | Carbon Evaporator (Leica EM ACE600) to make samples conductive]]<br />
* [[Tergeo Plus ICP- & CCP-RIE: Oxygen & Argon Plasma Cleaner | Oxygen & Argon Plasma Cleaner (Tergeo Plus ICP- & CCP-RIE) to remove hydrocarbons from surface]]<br />
* [[TEM Sample Preparation Equipment | TEM Sample Preparation Equipment: Polishing Stations, 3 mm Disk Cutter, Dimpler, Argon Ion Mill]]<br />
<br />
== Wet Chemistry ==<br />
* [[Wet Chemistry | Wet Chemistry Facilities, Processes & Safety]]<br />
<br />
== Support Tools ==<br />
===== Thermal Processing =====<br />
* [[Tube Furnaces for Wet & Dry Processing | Tube Furnaces: Tystar Tytan 1 & 2 (Wet & Dry Oxidation and Annealing)]]<br />
* [[Rapid Thermal Processor | Rapid Thermal Processing: Modular Process Technology RTP-600S]]<br />
===== Substrate Processing =====<br />
* [[Scriber-Breaker | Scriber-Breaker: Dynatex GST-150]]<br />
* [[Wafer Bonder | Wafer Bonder: Suss MicroTec model SB6L]]<br />
* [[Critical Point Dryer | Critical Point Dryer: Tousimis Automegasamdri 915B]]<br />
===== Device Processing =====<br />
* [[Wedge-Wedge Wire Bonder | Wedge-Wedge Wire Bonder: Westbond model 7476D-79]]<br />
* [[Electrical Probing Station | Electrical Probing Station: Cascade Microtech M150]]<br />
===== Metrology =====<br />
* [[Spectroscopic Ellipsometer | Spectroscopic Ellipsometer: Woolam M-2000]]<br />
* [[Dektak 3ST: Profilometer | Profilometer: Veeco Dektak 3ST]]<br />
* [[Light Microscope with Spectroscopic Reflectometer | Light Microscope: Olympus BX51M with Filmetrics Spectroscopic Reflectometer]]<br />
* [[Electrical Probing Station | Electrical Probing Station: Cascade Microtech M150]]<br />
<br />
===== Sample Preparation =====<br />
* [[TEM Sample Preparation Equipment | TEM Sample Preparation Equipment: Polishing Stations, 3 mm Disk Cutter, Dimpler, Argon Ion Mill]]<br />
* [[Carbon Evaporator | Carbon Evaporator (Leica EM ACE600) to make samples conductive]]<br />
* [[Tergeo Plus ICP- & CCP-RIE: Oxygen & Argon Plasma Cleaner | Oxygen & Argon Plasma Cleaner (Tergeo Plus ICP- & CCP-RIE) to remove hydrocarbons from surface]]</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Wet_Chemistry&diff=2135Wet Chemistry2020-01-11T22:40:36Z<p>Dvin: /* Chemistry Procedures and Safety */</p>
<hr />
<div>{{InstrumentInfoboxOneImage|<br />
|InstrumentName = Wet Chemistry<br />
|HeaderColor = #E6E7E8<br />
|ImageOne = Wet-Chemistry_Solvents-and-HF.jpg<br />
|ImageTwo = <br />
|InstrumentType = [[Equipment_List#Wet Chemistry|Wet Chemistry]]<br />
|RoomLocation = B211 Steele<br />
|LabPhone = 626-395-1538<br />
|PrimaryStaff = [[Bert Mendoza]]<br />
|StaffEmail = bertm@caltech.edu<br />
|StaffPhone = 626-395-4075<br />
|Manufacturer = NA<br />
|Model = NA<br />
|Techniques = Wet Chemical Processing:<br>Acids, Bases, Solvents,<br>and Electroplating<br />
|EmailList = kni-chemistry@caltech.edu<br />
|EmailListName = Chemistry<br />
}}<br />
__FORCETOC__<br />
==Facilities==<br />
<br />
*Potassium Hydroxide (KOH) Bath<br />
*Bottle Washer<br />
<br />
<br />
'''Available Benches:'''<br />
* Acids<br />
* Hydrofluoric Acid (HF)<br />
* Bases<br />
* Solvents<br />
* Electroplating<br />
<br />
== Chemistry Procedures and Safety ==<br />
<br />
* [[Wet Chemistry Safety | Lab Chemical Safety Procedures]] - Guides for PPE, equipment usage, chemical handling, storage and transfer.<br />
<br />
* [[Wet Chemistry Resources | Wet Chemistry Resources Page]] - Contains fabrication recipes and procedures<br />
<br />
* [https://www.chemicalsafety.com/sds-search Search for Safety Data Sheets (SDS)]<br />
<br />
* [[Lab_Rules_&_Safety | Lab Rules & Safety]] - KNI cleanroom safety handbook<br />
<br />
== Chemical Lists ==<br />
<br />
* '''[[Provided_Chemicals | Chemicals Provided by the KNI with typical SDS]]'''<br />
<br />
* '''[[Safety Data Sheets (SDS)#Liquids | Approved Chemicals]]'''</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Wet_Chemistry&diff=2134Wet Chemistry2020-01-11T22:39:55Z<p>Dvin: </p>
<hr />
<div>{{InstrumentInfoboxOneImage|<br />
|InstrumentName = Wet Chemistry<br />
|HeaderColor = #E6E7E8<br />
|ImageOne = Wet-Chemistry_Solvents-and-HF.jpg<br />
|ImageTwo = <br />
|InstrumentType = [[Equipment_List#Wet Chemistry|Wet Chemistry]]<br />
|RoomLocation = B211 Steele<br />
|LabPhone = 626-395-1538<br />
|PrimaryStaff = [[Bert Mendoza]]<br />
|StaffEmail = bertm@caltech.edu<br />
|StaffPhone = 626-395-4075<br />
|Manufacturer = NA<br />
|Model = NA<br />
|Techniques = Wet Chemical Processing:<br>Acids, Bases, Solvents,<br>and Electroplating<br />
|EmailList = kni-chemistry@caltech.edu<br />
|EmailListName = Chemistry<br />
}}<br />
__FORCETOC__<br />
==Facilities==<br />
<br />
*Potassium Hydroxide (KOH) Bath<br />
*Bottle Washer<br />
<br />
<br />
'''Available Benches:'''<br />
* Acids<br />
* Hydrofluoric Acid (HF)<br />
* Bases<br />
* Solvents<br />
* Electroplating<br />
<br />
== Chemistry Procedures and Safety ==<br />
<br />
* [[Wet Chemistry Safety | Lab Chemical Safety Procedures]] - Guides for PPE, equipment usage, chemical handling, storage and transfer.<br />
<br />
* [[Wet Chemistry Resources | Wet Chemistry Resources Page]] - Contains Fabrication recipes and procedures<br />
<br />
* [https://www.chemicalsafety.com/sds-search Search for Safety Data Sheets (SDS)]<br />
<br />
* [[Lab_Rules_&_Safety | Lab Rules & Safety]] - KNI cleanroom safety handbook<br />
<br />
== Chemical Lists ==<br />
<br />
* '''[[Provided_Chemicals | Chemicals Provided by the KNI with typical SDS]]'''<br />
<br />
* '''[[Safety Data Sheets (SDS)#Liquids | Approved Chemicals]]'''</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Wet_Chemistry_Safety&diff=2133Wet Chemistry Safety2020-01-11T22:38:12Z<p>Dvin: </p>
<hr />
<div>==Requesting New Chemicals==<br />
<br />
==PPE Overview==<br />
<br />
Refer to manual<br />
<br />
==Hazardous Waste Handling and Labeling==<br />
<br />
Refer to manual<br />
<br />
==Decanting Chemicals==<br />
<br />
==Hot Plate Rules==<br />
<br />
==Buddy System==<br />
<br />
==Secondary Containment==<br />
<br />
==Other Best Practices==</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Wet_Chemistry_Safety&diff=2132Wet Chemistry Safety2020-01-11T22:37:06Z<p>Dvin: Created page with "===Requesting New Chemicals=== ===PPE Overview=== Refer to manual ===Hazardous Waste Handling and Labeling=== Refer to manual ===Decanting Chemicals=== ===Hot Plate Rule..."</p>
<hr />
<div>===Requesting New Chemicals===<br />
<br />
===PPE Overview===<br />
<br />
Refer to manual<br />
<br />
===Hazardous Waste Handling and Labeling===<br />
<br />
Refer to manual<br />
<br />
===Decanting Chemicals===<br />
<br />
===Hot Plate Rules===<br />
<br />
===Buddy System===<br />
<br />
===Secondary Containment===<br />
<br />
===Other Best Practices===</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Wet_Chemistry&diff=2131Wet Chemistry2020-01-11T22:34:44Z<p>Dvin: /* Chemistry Procedures and Safety */</p>
<hr />
<div>{{InstrumentInfoboxOneImage|<br />
|InstrumentName = Wet Chemistry<br />
|HeaderColor = #E6E7E8<br />
|ImageOne = Wet-Chemistry_Solvents-and-HF.jpg<br />
|ImageTwo = <br />
|InstrumentType = [[Equipment_List#Wet Chemistry|Wet Chemistry]]<br />
|RoomLocation = B211 Steele<br />
|LabPhone = 626-395-1538<br />
|PrimaryStaff = [[Bert Mendoza]]<br />
|StaffEmail = bertm@caltech.edu<br />
|StaffPhone = 626-395-4075<br />
|Manufacturer = NA<br />
|Model = NA<br />
|Techniques = Wet Chemical Processing:<br>Acids, Bases, Solvents,<br>and Electroplating<br />
|EmailList = kni-chemistry@caltech.edu<br />
|EmailListName = Chemistry<br />
}}<br />
==Facilities==<br />
<br />
*Potassium Hydroxide (KOH) Bath<br />
*Bottle Washer<br />
<br />
<br />
'''Available Benches:'''<br />
* Acids<br />
* Hydrofluoric Acid (HF)<br />
* Bases<br />
* Solvents<br />
* Electroplating<br />
<br />
== Chemistry Procedures and Safety ==<br />
<br />
* [[Wet Chemistry Safety | Lab Chemical Safety Procedures]] - Guides for PPE, equipment usage, chemical handling, storage and transfer.<br />
<br />
* [[Wet Chemistry Resources | Wet Chemistry Resources Page]] - Contains Fabrication recipes and procedures<br />
<br />
* [https://www.chemicalsafety.com/sds-search Search for Safety Data Sheets (SDS)]<br />
<br />
* [[Lab_Rules_&_Safety | Lab Rules & Safety]] - KNI cleanroom safety handbook<br />
<br />
== Chemical Lists ==<br />
<br />
* '''[[Provided_Chemicals | Chemicals Provided by the KNI with typical SDS]]'''<br />
<br />
* '''[[Safety Data Sheets (SDS)#Liquids | Approved Chemicals]]'''</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Wet_Chemistry&diff=2130Wet Chemistry2020-01-11T22:33:42Z<p>Dvin: </p>
<hr />
<div>{{InstrumentInfoboxOneImage|<br />
|InstrumentName = Wet Chemistry<br />
|HeaderColor = #E6E7E8<br />
|ImageOne = Wet-Chemistry_Solvents-and-HF.jpg<br />
|ImageTwo = <br />
|InstrumentType = [[Equipment_List#Wet Chemistry|Wet Chemistry]]<br />
|RoomLocation = B211 Steele<br />
|LabPhone = 626-395-1538<br />
|PrimaryStaff = [[Bert Mendoza]]<br />
|StaffEmail = bertm@caltech.edu<br />
|StaffPhone = 626-395-4075<br />
|Manufacturer = NA<br />
|Model = NA<br />
|Techniques = Wet Chemical Processing:<br>Acids, Bases, Solvents,<br>and Electroplating<br />
|EmailList = kni-chemistry@caltech.edu<br />
|EmailListName = Chemistry<br />
}}<br />
==Facilities==<br />
<br />
*Potassium Hydroxide (KOH) Bath<br />
*Bottle Washer<br />
<br />
<br />
'''Available Benches:'''<br />
* Acids<br />
* Hydrofluoric Acid (HF)<br />
* Bases<br />
* Solvents<br />
* Electroplating<br />
<br />
== Chemistry Procedures and Safety ==<br />
<br />
* [[Wet Chemistry Safety | Lab Chemical Safety Procedures]] - Guides for PPE, equipment usage, chemical handling, storage and transfer.<br />
<br />
* [[Wet Chemistry Resources | Wet Chemistry Resources Page]] - Contains Fabrication recipes and procedures<br />
<br />
* [https://www.chemicalsafety.com/sds-search Search for Safety Data Sheets (SDS)]<br />
<br />
* [[Lab_Rules_&_Safety | Lab Rules & Safety]] - KNI cleanroom safety guide<br />
<br />
== Chemical Lists ==<br />
<br />
* '''[[Provided_Chemicals | Chemicals Provided by the KNI with typical SDS]]'''<br />
<br />
* '''[[Safety Data Sheets (SDS)#Liquids | Approved Chemicals]]'''</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Wet_Chemistry&diff=2129Wet Chemistry2020-01-11T22:33:19Z<p>Dvin: </p>
<hr />
<div>{{InstrumentInfoboxOneImage|<br />
|InstrumentName = Wet Chemistry<br />
|HeaderColor = #E6E7E8<br />
|ImageOne = Wet-Chemistry_Solvents-and-HF.jpg<br />
|ImageTwo = <br />
|InstrumentType = [[Equipment_List#Wet Chemistry|Wet Chemistry]]<br />
|RoomLocation = B211 Steele<br />
|LabPhone = 626-395-1538<br />
|PrimaryStaff = [[Bert Mendoza]]<br />
|StaffEmail = bertm@caltech.edu<br />
|StaffPhone = 626-395-4075<br />
|Manufacturer = NA<br />
|Model = NA<br />
|Techniques = Wet Chemical Processing:<br>Acids, Bases, Solvents,<br>and Electroplating<br />
|EmailList = kni-chemistry@caltech.edu<br />
|EmailListName = Chemistry<br />
}}<br />
<br />
==Facilities==<br />
<br />
*Potassium Hydroxide (KOH) Bath<br />
*Bottle Washer<br />
<br />
<br />
'''Available Benches:'''<br />
* Acids<br />
* Hydrofluoric Acid (HF)<br />
* Bases<br />
* Solvents<br />
* Electroplating<br />
<br />
== Chemistry Procedures and Safety ==<br />
<br />
* [[Wet Chemistry Safety | Lab Chemical Safety Procedures]] - Guides for PPE, equipment usage, chemical handling, storage and transfer.<br />
<br />
* [[Wet Chemistry Resources | Wet Chemistry Resources Page]] - Contains Fabrication recipes and procedures<br />
<br />
* [https://www.chemicalsafety.com/sds-search Search for Safety Data Sheets (SDS)]<br />
<br />
* [[Lab_Rules_&_Safety | Lab Rules & Safety]] - KNI cleanroom safety guide<br />
<br />
== Chemical Lists ==<br />
<br />
* '''[[Provided_Chemicals | Chemicals Provided by the KNI with typical SDS]]'''<br />
<br />
* '''[[Safety Data Sheets (SDS)#Liquids | Approved Chemicals]]'''</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Wet_Chemistry&diff=2128Wet Chemistry2020-01-11T21:13:54Z<p>Dvin: </p>
<hr />
<div>{{InstrumentInfoboxOneImage|<br />
|InstrumentName = Wet Chemistry<br />
|HeaderColor = #E6E7E8<br />
|ImageOne = Wet-Chemistry_Solvents-and-HF.jpg<br />
|ImageTwo = <br />
|InstrumentType = [[Equipment_List#Wet Chemistry|Wet Chemistry]]<br />
|RoomLocation = B211 Steele<br />
|LabPhone = 626-395-1538<br />
|PrimaryStaff = [[Bert Mendoza]]<br />
|StaffEmail = bertm@caltech.edu<br />
|StaffPhone = 626-395-4075<br />
|Manufacturer = NA<br />
|Model = NA<br />
|Techniques = Wet Chemical Processing:<br>Acids, Bases, Solvents,<br>and Electroplating<br />
|EmailList = kni-chemistry@caltech.edu<br />
|EmailListName = Chemistry<br />
}}<br />
<br />
===== Available Bench Facilities: =====<br />
* Acids<br />
* Hydrofluoric Acid (HF)<br />
* Bases<br />
* Potassium Hydroxide (KOH)<br />
* Solvents<br />
* Electroplating<br />
<br />
===== Chemical Processes Resources =====<br />
<br />
* [[Wet Chemistry Resources | Wet Chemistry Resources Page]] - Contains recipes and procedures<br />
<br />
===== Chemical Safety Resources =====<br />
<br />
* [https://www.chemicalsafety.com/sds-search Search for Safety Data Sheets (SDS)]<br />
<br />
* [[Lab_Rules_&_Safety | Lab Rules & Safety]] - KNI cleanroom safety guide<br />
<br />
===== Chemicals Provided by the KNI with typical SDS:=====<br />
<br />
* [[Provided_Chemicals | See List]]<br />
<br />
===== Approved Chemicals: =====<br />
<br />
* [[Safety Data Sheets (SDS)#Liquids | See List]]</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Provided_Chemicals&diff=2127Provided Chemicals2020-01-11T21:05:32Z<p>Dvin: </p>
<hr />
<div>===== Chemicals Provided by the KNI with typical SDS=====<br />
* [https://caltech.box.com/s/e9aenw9ddp2mubkvqkxqd3mtfohp7xz1 Acetic Acid Glacial]<br />
* [https://caltech.box.com/s/3zz1ugq1qgtwmc29o54313sy8u7an9hd Acetone]<br />
* [https://caltech.box.com/s/a8n0s5au2cucnsfqlwh2wctml3imigwb Aluminum Etchant Type A]<br />
* Aluminum Etchant D<br />
* [https://caltech.box.com/s/qi5n4uow7kq9aq04y1z3glb4jnzsjr89 Ammonium Hydroxide (NH<sub>4</sub>OH)]<br />
* Au Etchant<br />
* [https://caltech.box.com/s/oet38b107t13e5eyua3p5u40imggnqqs AZ 400K Photoresist Developer]<br />
* [https://caltech.box.com/s/xsouakt5afpirwsj2t2otve9bqo6nkzx AZ 726 MIF Developer]<br />
* AZ 4620<br />
* [https://caltech.box.com/s/lsa4wk6vktuuh4itqzv9r3k0yql38dwi AZ 5214-E Photoresist]<br />
* [https://caltech.box.com/s/fl0p67vj2gtucz6896taed5wu9thdoeo Buffered HF Improved]<br />
* [https://caltech.box.com/s/nbbptm14e4ejc5kc9bjm8x0aa074pnla CD 26 Developer]<br />
* [https://caltech.box.com/s/ejr2qph7nits1eaelm1f21s1oowrou0d Chromium Etchant CR-7S]<br />
* Citric Acid<br />
* Copper Etchant<br />
* [https://caltech.box.com/s/y2o9z1zt1kor0we7erdkfyruxgyp82h7 Hexamethyldisilizane (HMDS)]<br />
* [https://caltech.box.com/s/m1icrzidd6tw2ql7zke5p9v3mq2fx0br Hydrochloric Acid]<br />
* Hydrofluoric Acid (HF)<br />
* [https://caltech.box.com/s/jg1y0btpel4fpylh7vonld9gykvp6plg Hydrogen Peroxide, 30% H<sub>2</sub>O<sub>2</sub>]<br />
* [https://caltech.box.com/s/7c02l4sctvfx0wplr4k6429yi0j8ew5q Isopropyl Alcohol (IPA)]<br />
* [https://caltech.box.com/s/mk4rilpjcbd5ryjb1tw764eau62mjq7f Methanol]<br />
* [https://caltech.box.com/s/tf1ty82wcbf68l7gekqsna3ajuiljhkw Methyl Isobutyl Ketone (MIBK, 4-Methyl-2-pentanone)]<br />
* [https://caltech.box.com/s/fip81rmqz0x1pw031zqg7blun11617mv Methylene Chlorine (Dichloromethane)]<br />
* [https://caltech.box.com/s/w1fp48vpymlru0675o28tuugig7bmevv MF 319 Developer]<br />
* [https://caltech.box.com/s/mewj3293pbgyjj3zxupoj0uo9i4hv0c7 Nano-strip and Nanostrip 2x]<br />
* [https://caltech.box.com/s/kqdon6279rxtna894s6qzgah7xn3p0ld Remover PG, Photoresist Remover (N-Methyl-2-Pyrrolidone)]<br />
* PGMEA<br />
* [https://caltech.box.com/s/44slar2g3q5cbe9vrpg5tq7viwq1v6vm Phosphoric Acid (H<sub>3</sub>PO<sub>4</sub>)]<br />
* [https://caltech.box.com/s/41wp3geih92ydmu1jrv5f4spms6j1utg Potassium Hydroxide]<br />
* [https://caltech.box.com/s/avqs14mt28i1epom0n6w37p55rjqvkbe SU-8 Developer] (Micro-Chem)<br />
* [https://caltech.box.com/s/89j0lgduzv1hqnewgfr5rrkigxcpw5b3 Sulfuric Acid (H<sub>2</sub>SO<sub>4</sub>)]<br />
* [https://caltech.box.com/s/9ht2pznbmygzrau5bgp4yuom65h3wk4u Titanium Etchant TFT]<br />
* [https://caltech.box.com/s/976lv8b4ka4oupr7nkfb8g1pill79usn Tetramethylammonium Hydroxide 25% (TMAH)]<br />
<br />
===== All Approved Chemicals =====<br />
* [[Safety Data Sheets (SDS)#Liquids | See List]]</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Provided_Chemicals&diff=2126Provided Chemicals2020-01-11T21:04:14Z<p>Dvin: Created page with "===== Chemicals Provided by the KNI with typical SDS===== * [https://caltech.box.com/s/e9aenw9ddp2mubkvqkxqd3mtfohp7xz1 Acetic Acid Glacial] * [https://caltech.box.com/s/3zz1u..."</p>
<hr />
<div>===== Chemicals Provided by the KNI with typical SDS=====<br />
* [https://caltech.box.com/s/e9aenw9ddp2mubkvqkxqd3mtfohp7xz1 Acetic Acid Glacial]<br />
* [https://caltech.box.com/s/3zz1ugq1qgtwmc29o54313sy8u7an9hd Acetone]<br />
* [https://caltech.box.com/s/a8n0s5au2cucnsfqlwh2wctml3imigwb Aluminum Etchant Type A]<br />
* Aluminum Etchant D<br />
* [https://caltech.box.com/s/qi5n4uow7kq9aq04y1z3glb4jnzsjr89 Ammonium Hydroxide (NH<sub>4</sub>OH)]<br />
* Au Etchant<br />
* [https://caltech.box.com/s/oet38b107t13e5eyua3p5u40imggnqqs AZ 400K Photoresist Developer]<br />
* [https://caltech.box.com/s/xsouakt5afpirwsj2t2otve9bqo6nkzx AZ 726 MIF Developer]<br />
* AZ 4620<br />
* [https://caltech.box.com/s/lsa4wk6vktuuh4itqzv9r3k0yql38dwi AZ 5214-E Photoresist]<br />
* [https://caltech.box.com/s/fl0p67vj2gtucz6896taed5wu9thdoeo Buffered HF Improved]<br />
* [https://caltech.box.com/s/nbbptm14e4ejc5kc9bjm8x0aa074pnla CD 26 Developer]<br />
* [https://caltech.box.com/s/ejr2qph7nits1eaelm1f21s1oowrou0d Chromium Etchant CR-7S]<br />
* Citric Acid<br />
* Copper Etchant<br />
* [https://caltech.box.com/s/y2o9z1zt1kor0we7erdkfyruxgyp82h7 Hexamethyldisilizane (HMDS)]<br />
* [https://caltech.box.com/s/m1icrzidd6tw2ql7zke5p9v3mq2fx0br Hydrochloric Acid]<br />
* Hydrofluoric Acid (HF)<br />
* [https://caltech.box.com/s/jg1y0btpel4fpylh7vonld9gykvp6plg Hydrogen Peroxide, 30% H<sub>2</sub>O<sub>2</sub>]<br />
* [https://caltech.box.com/s/7c02l4sctvfx0wplr4k6429yi0j8ew5q Isopropyl Alcohol (IPA)]<br />
* [https://caltech.box.com/s/mk4rilpjcbd5ryjb1tw764eau62mjq7f Methanol]<br />
* [https://caltech.box.com/s/tf1ty82wcbf68l7gekqsna3ajuiljhkw Methyl Isobutyl Ketone (MIBK, 4-Methyl-2-pentanone)]<br />
* [https://caltech.box.com/s/fip81rmqz0x1pw031zqg7blun11617mv Methylene Chlorine (Dichloromethane)]<br />
* [https://caltech.box.com/s/w1fp48vpymlru0675o28tuugig7bmevv MF 319 Developer]<br />
* [https://caltech.box.com/s/mewj3293pbgyjj3zxupoj0uo9i4hv0c7 Nano-strip and Nanostrip 2x]<br />
* [https://caltech.box.com/s/kqdon6279rxtna894s6qzgah7xn3p0ld Remover PG, Photoresist Remover (N-Methyl-2-Pyrrolidone)]<br />
* PGMEA<br />
* [https://caltech.box.com/s/44slar2g3q5cbe9vrpg5tq7viwq1v6vm Phosphoric Acid (H<sub>3</sub>PO<sub>4</sub>)]<br />
* [https://caltech.box.com/s/41wp3geih92ydmu1jrv5f4spms6j1utg Potassium Hydroxide]<br />
* [https://caltech.box.com/s/avqs14mt28i1epom0n6w37p55rjqvkbe SU-8 Developer] (Micro-Chem)<br />
* [https://caltech.box.com/s/89j0lgduzv1hqnewgfr5rrkigxcpw5b3 Sulfuric Acid (H<sub>2</sub>SO<sub>4</sub>)]<br />
* [https://caltech.box.com/s/9ht2pznbmygzrau5bgp4yuom65h3wk4u Titanium Etchant TFT]<br />
* [https://caltech.box.com/s/976lv8b4ka4oupr7nkfb8g1pill79usn Tetramethylammonium Hydroxide 25% (TMAH)]</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Optical_Lithography_Resources&diff=2122Optical Lithography Resources2019-12-28T20:31:32Z<p>Dvin: /* SU-8 Recipes */</p>
<hr />
<div>'''[https://www.microchemicals.com/downloads/application_notes.html Trove of lithography application notes from MicroChemicals covering troubleshooting, procedures, techniques, theory]'''<br />
<br />
=KNI Photoresists=<br />
<br />
Photoresists provided by KNI:<br />
<br />
*'''S1805, 1813, 1818''': field standard positive, may be used for liftoff and withstands some acid etching. Designed with lower toxicity materials. ([https://kayakuam.com/wp-content/uploads/2019/09/S1800-G2.pdf Manufacturer Spec Sheet]) Shipley 1800 series 0.5-1.9μm range available. 0.5-3.2μm available from manufacturer. Suitable for multiple applications but not niche optimized as latter resists.<br />
*'''AZ 5214''': exposable as positive and image reversal negative. Optimized for liftoff processes with negative sidewall profile. Structure is stable to 130°C after postbake. 1-2μm thickness ([https://www.microchemicals.com/micro/tds_az_nlof2000_series.pdf Manufacturer Spec Sheet])<br />
*'''AZ 9245, 9260''': Intended for thick positive structures 4-20μm. Lower optical absorption and sensitivity permits tall structures but development is slow. ([https://www.microchemicals.com/products/photoresists/az_9260.html Product Page])<br />
*'''AZ nLof 2020, 2035, 2070''': Also optimized for liftoff processes but thicker than 5214 at 2-7μm spinnable. Structures can be made stable to 250°C. High chemical stability, e-beam exposable, but more difficult to remove. ([https://www.microchemicals.com/products/photoresists/az_nlof_2020.html Product Page])<br />
*'''AZ 3330-F''': medium resolution resist, high thermal stability, optimized for metal RIE etch or plating process environments. 1.0-5.0µm spinnable ([http://www.imicromaterials.com/index.php/products/ig-line-photoresists/az-3300-series Product Page])<br />
*'''AZ 4620''': improved surface adhesion for etching and plating applications, photosensitivity is broad and low, spinnable to 6 - 20 µm.([https://www.microchemicals.com/products/photoresists/az_p4620.html Product Page])<br />
<br />
SU8 Photoresists are no longer provided by KNI (SU8 Developer IS provided by KNI):<br />
<br />
<br />
<br />
'''''Reminder of lamp intensities:'''''<br />
<br />
'''Suss 1 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 15 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 25 mW/cm2.<br />
'''Suss 2 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 10 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 15 mW/cm2.<br />
<br />
'''''Reminder of room conditioning:'''''<br />
<br />
* Temperature is specified to 68±1° F in the photolithography and surrounding rooms.<br />
* Humidity is typically 50% in the photolithography room, KNI is specified to 40-70%. Remember that moving resist coated samples to dryer rooms, they will need to rehydrate over some time period.<br />
<br />
==Positive Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | S1813 || Dehydrate on hot plate || 3000rpm || 1.6μm || 115°C 1min || 8-10s || - || - || MF 319 45-60s || - || Suss1 Ch2 || [https://caltech.app.box.com/s/3pa2im5jj1e86rdozwigt8yfnb8fi5k3 Measured 11/19]<br />
|-<br />
| Dehydrate on hot plate || 5000rpm || 1.1μm || 115°C 1min || 8-10s || - || - || MF 319 45-60s || - || Suss1 Ch2 || [https://caltech.app.box.com/s/3pa2im5jj1e86rdozwigt8yfnb8fi5k3 Measured 11/19]<br />
|-<br />
| AZ 5214 || Dehydrate on hot plate || 3500rpm || 1.4μm || 100°C 1min || 25s || - || - || MF319 60s || - || Suss1 Ch1 || [https://caltech.box.com/s/5ls5rk4oanod66pfilsuendthutcmfqu Measured 10/19]<br />
|-<br />
| AZ 9260 || Dehydrate on hot plate || 3000rpm || 8μm || 110°C 165s || 100s || - || - || MF319 12min || - || Suss2 Ch2 || Measured 1/20<br />
|}<br />
<br />
==Negative Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | AZ5214 || Dehydrate on hot plate || 2000rpm || 1.8μm || 100°C 1min || 12s || 110°C 45-60s || 40s || MF319 60s || - || Suss1 Ch1 || [https://caltech.box.com/s/5ls5rk4oanod66pfilsuendthutcmfqu Measured 10/19]<br />
|-<br />
| Dehydrate on hot plate || 3500rpm || 1.4μm || 100°C 1min || 9s || 110°C 45-60s || 30s || MF319 60s || - || Suss1 Ch1 || [https://caltech.box.com/s/5ls5rk4oanod66pfilsuendthutcmfqu Measured 10/19]<br />
|-<br />
| nLoF 2070 || Dehydrate on hot plate || 2500rpm || 7um || 110C 90s || 12s || 110C 90s || - || AZ 726 2min || - || Suss1 Ch1 || [https://caltech.app.box.com/file/571703050359 Measured 12/19]<br />
|}<br />
<br />
=Other Photoresists=<br />
<br />
*[https://cleanroom.byu.edu/resistmanufacturers BYU Comprehensive list of photoresists]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes UCSB Photoresist Recipes Page 1]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Contact_Alignment_Recipes UCSB Photoresist Recipes Page 2]<br />
<br />
*[https://cleanroom.byu.edu/photoresists BYU Photoresist Recipes]<br />
<br />
*'''SU-8 2002, 2025, 2075, 2100, 3025, 3050''': epoxy-based negative resist. Optimal for tall high-aspect ratio permanent structures. ([https://kayakuam.com/products/su-8-photoresists/ Manufacturer Spec Sheet ]). Difficult to remove. Spinnable to 1.5-200μm thickness. <br />
<br />
==Non-KNI Photoresist Recipes==<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| SPR 220-7.0 || - || - || - || - || - || - || - || - || - || - || -<br />
|-<br />
|}<br />
<br />
==SU-8 Recipes==<br />
<br />
SU-8 is available in thicknesses ranging from 500nm to 500microns. Remember to use Laurel Spinner 1 and develop in the Wet Chemistry room on the Solvent Bench.<br />
<br />
[https://cleanroom.byu.edu/su8 BYU SU-8 Guide]<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| 2002 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || -<br />
|-<br />
| 2025 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || -<br />
|-<br />
| 2100 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || -<br />
|}<br />
<br />
=KNI Developers=<br />
<br />
These developers can be used on the Develop Bench in the Optical Lithography room or on the BASE Bench in the Wet Chemistry room:<br />
<br />
*'''AZ 726 MIF''': 2.38% TMAH-based, pre-diluted (ready-to-use) and slightly further diluted only when the application requires it. Contains surfactants to improve development uniformity, so avoid stirring. MIF identifies the developer as 'Metal Ion Free' as it does not contain potassium as in KOH-based developers, it is based on TMAH, an ammonium salt, which prevents metal contamination of semiconductors. 726 is a recommended developer for almost all AZ resists [https://www.microchemicals.com/technical_information/development_photoresist.pdf MicroChemicals Development Application Note]<br />
<br />
*'''Microposit MF 319''': (Metal-Free) TMAH: 2.45%, Polyalkylene glycol <1%, pH: 13. Paired to Shipley/Microposit 1800 series resists, S1805,S1813,S1818 [https://cpb-us-e1.wpmucdn.com/sites.usc.edu/dist/a/194/files/2018/07/MF-319-Developer-1iqbk7y.pdf MSDS]<br />
<br />
*'''Microposit CD-26''': TMAH <5.0 % , pH 13, Also 1800 series targeted, no additional surfactants.<br />
<br />
*'''AZ 400K''': KOH-based. "The recommended dilutions for the AZ® 400 K or AZ® 351 B for most of the processes are developer concentrate : Water = 1: . For very thick resist films, up to a 1:3 ratio can be applied [with lower contrast], with a very fine (sub-µm) structures, a 1:5 or 1:6 ratio can support a high resolution using thin resist films." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note] Users can adjust dilution for accuracy and length of time they will tolerate.<br />
**Critical note on KOH use: "Incompatibilities between MIC and MIF Developers Even small traces of TMAH-based metal ion-free developers such as the AZ® 326 MIF, 726 MIF or 826 MIF) can significantly reduce the development rate of metal ion-containing developers (such as the AZ® 400K or 351B). If both types of developers are used, extremely clean work is to be ensured to prevent mutual contamination even in the ppm range, such as in the dispensing system or developer containers." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note]<br />
<br />
*'''Microposit 2401''': Legacy developer<br />
<br />
<br />
SU-8 developer can ONLY be used on the SOLVENT Bench in the Wet Chemistry room:<br />
<br />
*'''SU-8 Developer''': (Organic Solvent Solution) 1-Methoxy-2-propanol acetate, >99.5%, Synonym propylene glycol monomethyl ether acetate 2-Methoxy-1-propanol acetate, <0.5%. [https://caltech.app.box.com/s/avqs14mt28i1epom0n6w37p55rjqvkbe MSDS] Paired to SU8 series resists. <br />
<br />
<br />
===Surfactants===<br />
<br />
Surfactants were developed and added in the 1980s to photoresist developers to combat photoresists' hydrophobic surfaces which cause "hot spots" of fast development. They reduce the surface tension and improve wetting (giving homogeneous development). The common drawback of their inclusion is foaming and an oily nature which makes them incompatible with some agitated processes. Surfactacts also change development speed since they coat photoresist surfaces and inhibit the dissolution reaction. As such exposure-development times must be adjusted and while contrast is improved, resolution may be lost. See here for more in depth discussion: [http://www.lithoguru.com/scientist/litho_tutor/TUTOR09%20(Winter%2095).pdf The Lithography Tutor: Photoresist Development]<br />
<br />
=Addtional Photolithography Resources=<br />
<br />
*[https://cleanroom.byu.edu/processes#Microfab_PhotoLith BYU Photolithography Guide]<br />
<br />
*[https://kayakuam.com/techreferences/lithography-terms/ Lithography Terminology]<br />
<br />
*[https://cleanroom.byu.edu/definitions Lithography Terminology 2]<br />
<br />
*[https://pages.mtu.edu/~microweb/chap1/ch1-4-1.htm Resolution Limits of Photolithography]</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Optical_Lithography_Resources&diff=2121Optical Lithography Resources2019-12-28T20:31:10Z<p>Dvin: /* Non-KNI Photoresist Recipes */</p>
<hr />
<div>'''[https://www.microchemicals.com/downloads/application_notes.html Trove of lithography application notes from MicroChemicals covering troubleshooting, procedures, techniques, theory]'''<br />
<br />
=KNI Photoresists=<br />
<br />
Photoresists provided by KNI:<br />
<br />
*'''S1805, 1813, 1818''': field standard positive, may be used for liftoff and withstands some acid etching. Designed with lower toxicity materials. ([https://kayakuam.com/wp-content/uploads/2019/09/S1800-G2.pdf Manufacturer Spec Sheet]) Shipley 1800 series 0.5-1.9μm range available. 0.5-3.2μm available from manufacturer. Suitable for multiple applications but not niche optimized as latter resists.<br />
*'''AZ 5214''': exposable as positive and image reversal negative. Optimized for liftoff processes with negative sidewall profile. Structure is stable to 130°C after postbake. 1-2μm thickness ([https://www.microchemicals.com/micro/tds_az_nlof2000_series.pdf Manufacturer Spec Sheet])<br />
*'''AZ 9245, 9260''': Intended for thick positive structures 4-20μm. Lower optical absorption and sensitivity permits tall structures but development is slow. ([https://www.microchemicals.com/products/photoresists/az_9260.html Product Page])<br />
*'''AZ nLof 2020, 2035, 2070''': Also optimized for liftoff processes but thicker than 5214 at 2-7μm spinnable. Structures can be made stable to 250°C. High chemical stability, e-beam exposable, but more difficult to remove. ([https://www.microchemicals.com/products/photoresists/az_nlof_2020.html Product Page])<br />
*'''AZ 3330-F''': medium resolution resist, high thermal stability, optimized for metal RIE etch or plating process environments. 1.0-5.0µm spinnable ([http://www.imicromaterials.com/index.php/products/ig-line-photoresists/az-3300-series Product Page])<br />
*'''AZ 4620''': improved surface adhesion for etching and plating applications, photosensitivity is broad and low, spinnable to 6 - 20 µm.([https://www.microchemicals.com/products/photoresists/az_p4620.html Product Page])<br />
<br />
SU8 Photoresists are no longer provided by KNI (SU8 Developer IS provided by KNI):<br />
<br />
<br />
<br />
'''''Reminder of lamp intensities:'''''<br />
<br />
'''Suss 1 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 15 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 25 mW/cm2.<br />
'''Suss 2 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 10 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 15 mW/cm2.<br />
<br />
'''''Reminder of room conditioning:'''''<br />
<br />
* Temperature is specified to 68±1° F in the photolithography and surrounding rooms.<br />
* Humidity is typically 50% in the photolithography room, KNI is specified to 40-70%. Remember that moving resist coated samples to dryer rooms, they will need to rehydrate over some time period.<br />
<br />
==Positive Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | S1813 || Dehydrate on hot plate || 3000rpm || 1.6μm || 115°C 1min || 8-10s || - || - || MF 319 45-60s || - || Suss1 Ch2 || [https://caltech.app.box.com/s/3pa2im5jj1e86rdozwigt8yfnb8fi5k3 Measured 11/19]<br />
|-<br />
| Dehydrate on hot plate || 5000rpm || 1.1μm || 115°C 1min || 8-10s || - || - || MF 319 45-60s || - || Suss1 Ch2 || [https://caltech.app.box.com/s/3pa2im5jj1e86rdozwigt8yfnb8fi5k3 Measured 11/19]<br />
|-<br />
| AZ 5214 || Dehydrate on hot plate || 3500rpm || 1.4μm || 100°C 1min || 25s || - || - || MF319 60s || - || Suss1 Ch1 || [https://caltech.box.com/s/5ls5rk4oanod66pfilsuendthutcmfqu Measured 10/19]<br />
|-<br />
| AZ 9260 || Dehydrate on hot plate || 3000rpm || 8μm || 110°C 165s || 100s || - || - || MF319 12min || - || Suss2 Ch2 || Measured 1/20<br />
|}<br />
<br />
==Negative Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | AZ5214 || Dehydrate on hot plate || 2000rpm || 1.8μm || 100°C 1min || 12s || 110°C 45-60s || 40s || MF319 60s || - || Suss1 Ch1 || [https://caltech.box.com/s/5ls5rk4oanod66pfilsuendthutcmfqu Measured 10/19]<br />
|-<br />
| Dehydrate on hot plate || 3500rpm || 1.4μm || 100°C 1min || 9s || 110°C 45-60s || 30s || MF319 60s || - || Suss1 Ch1 || [https://caltech.box.com/s/5ls5rk4oanod66pfilsuendthutcmfqu Measured 10/19]<br />
|-<br />
| nLoF 2070 || Dehydrate on hot plate || 2500rpm || 7um || 110C 90s || 12s || 110C 90s || - || AZ 726 2min || - || Suss1 Ch1 || [https://caltech.app.box.com/file/571703050359 Measured 12/19]<br />
|}<br />
<br />
=Other Photoresists=<br />
<br />
*[https://cleanroom.byu.edu/resistmanufacturers BYU Comprehensive list of photoresists]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes UCSB Photoresist Recipes Page 1]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Contact_Alignment_Recipes UCSB Photoresist Recipes Page 2]<br />
<br />
*[https://cleanroom.byu.edu/photoresists BYU Photoresist Recipes]<br />
<br />
*'''SU-8 2002, 2025, 2075, 2100, 3025, 3050''': epoxy-based negative resist. Optimal for tall high-aspect ratio permanent structures. ([https://kayakuam.com/products/su-8-photoresists/ Manufacturer Spec Sheet ]). Difficult to remove. Spinnable to 1.5-200μm thickness. <br />
<br />
==Non-KNI Photoresist Recipes==<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| SPR 220-7.0 || - || - || - || - || - || - || - || - || - || - || -<br />
|-<br />
|}<br />
<br />
==SU-8 Recipes==<br />
<br />
SU-8 is available in thicknesses ranging from 500nm to 500microns. Remember to use Laurel Spinner 1 and develop in the Wet Chemistry room on the Solvent Bench.<br />
<br />
[https://cleanroom.byu.edu/su8 BYU SU-8 Guide]<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| 2002 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| 2025 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| 2100 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || Measured 10/19<br />
|}<br />
<br />
=KNI Developers=<br />
<br />
These developers can be used on the Develop Bench in the Optical Lithography room or on the BASE Bench in the Wet Chemistry room:<br />
<br />
*'''AZ 726 MIF''': 2.38% TMAH-based, pre-diluted (ready-to-use) and slightly further diluted only when the application requires it. Contains surfactants to improve development uniformity, so avoid stirring. MIF identifies the developer as 'Metal Ion Free' as it does not contain potassium as in KOH-based developers, it is based on TMAH, an ammonium salt, which prevents metal contamination of semiconductors. 726 is a recommended developer for almost all AZ resists [https://www.microchemicals.com/technical_information/development_photoresist.pdf MicroChemicals Development Application Note]<br />
<br />
*'''Microposit MF 319''': (Metal-Free) TMAH: 2.45%, Polyalkylene glycol <1%, pH: 13. Paired to Shipley/Microposit 1800 series resists, S1805,S1813,S1818 [https://cpb-us-e1.wpmucdn.com/sites.usc.edu/dist/a/194/files/2018/07/MF-319-Developer-1iqbk7y.pdf MSDS]<br />
<br />
*'''Microposit CD-26''': TMAH <5.0 % , pH 13, Also 1800 series targeted, no additional surfactants.<br />
<br />
*'''AZ 400K''': KOH-based. "The recommended dilutions for the AZ® 400 K or AZ® 351 B for most of the processes are developer concentrate : Water = 1: . For very thick resist films, up to a 1:3 ratio can be applied [with lower contrast], with a very fine (sub-µm) structures, a 1:5 or 1:6 ratio can support a high resolution using thin resist films." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note] Users can adjust dilution for accuracy and length of time they will tolerate.<br />
**Critical note on KOH use: "Incompatibilities between MIC and MIF Developers Even small traces of TMAH-based metal ion-free developers such as the AZ® 326 MIF, 726 MIF or 826 MIF) can significantly reduce the development rate of metal ion-containing developers (such as the AZ® 400K or 351B). If both types of developers are used, extremely clean work is to be ensured to prevent mutual contamination even in the ppm range, such as in the dispensing system or developer containers." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note]<br />
<br />
*'''Microposit 2401''': Legacy developer<br />
<br />
<br />
SU-8 developer can ONLY be used on the SOLVENT Bench in the Wet Chemistry room:<br />
<br />
*'''SU-8 Developer''': (Organic Solvent Solution) 1-Methoxy-2-propanol acetate, >99.5%, Synonym propylene glycol monomethyl ether acetate 2-Methoxy-1-propanol acetate, <0.5%. [https://caltech.app.box.com/s/avqs14mt28i1epom0n6w37p55rjqvkbe MSDS] Paired to SU8 series resists. <br />
<br />
<br />
===Surfactants===<br />
<br />
Surfactants were developed and added in the 1980s to photoresist developers to combat photoresists' hydrophobic surfaces which cause "hot spots" of fast development. They reduce the surface tension and improve wetting (giving homogeneous development). The common drawback of their inclusion is foaming and an oily nature which makes them incompatible with some agitated processes. Surfactacts also change development speed since they coat photoresist surfaces and inhibit the dissolution reaction. As such exposure-development times must be adjusted and while contrast is improved, resolution may be lost. See here for more in depth discussion: [http://www.lithoguru.com/scientist/litho_tutor/TUTOR09%20(Winter%2095).pdf The Lithography Tutor: Photoresist Development]<br />
<br />
=Addtional Photolithography Resources=<br />
<br />
*[https://cleanroom.byu.edu/processes#Microfab_PhotoLith BYU Photolithography Guide]<br />
<br />
*[https://kayakuam.com/techreferences/lithography-terms/ Lithography Terminology]<br />
<br />
*[https://cleanroom.byu.edu/definitions Lithography Terminology 2]<br />
<br />
*[https://pages.mtu.edu/~microweb/chap1/ch1-4-1.htm Resolution Limits of Photolithography]</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Optical_Lithography_Resources&diff=2120Optical Lithography Resources2019-12-28T17:05:17Z<p>Dvin: </p>
<hr />
<div>'''[https://www.microchemicals.com/downloads/application_notes.html Trove of lithography application notes from MicroChemicals covering troubleshooting, procedures, techniques, theory]'''<br />
<br />
=KNI Photoresists=<br />
<br />
Photoresists provided by KNI:<br />
<br />
*'''S1805, 1813, 1818''': field standard positive, may be used for liftoff and withstands some acid etching. Designed with lower toxicity materials. ([https://kayakuam.com/wp-content/uploads/2019/09/S1800-G2.pdf Manufacturer Spec Sheet]) Shipley 1800 series 0.5-1.9μm range available. 0.5-3.2μm available from manufacturer. Suitable for multiple applications but not niche optimized as latter resists.<br />
*'''AZ 5214''': exposable as positive and image reversal negative. Optimized for liftoff processes with negative sidewall profile. Structure is stable to 130°C after postbake. 1-2μm thickness ([https://www.microchemicals.com/micro/tds_az_nlof2000_series.pdf Manufacturer Spec Sheet])<br />
*'''AZ 9245, 9260''': Intended for thick positive structures 4-20μm. Lower optical absorption and sensitivity permits tall structures but development is slow. ([https://www.microchemicals.com/products/photoresists/az_9260.html Product Page])<br />
*'''AZ nLof 2020, 2035, 2070''': Also optimized for liftoff processes but thicker than 5214 at 2-7μm spinnable. Structures can be made stable to 250°C. High chemical stability, e-beam exposable, but more difficult to remove. ([https://www.microchemicals.com/products/photoresists/az_nlof_2020.html Product Page])<br />
*'''AZ 3330-F''': medium resolution resist, high thermal stability, optimized for metal RIE etch or plating process environments. 1.0-5.0µm spinnable ([http://www.imicromaterials.com/index.php/products/ig-line-photoresists/az-3300-series Product Page])<br />
*'''AZ 4620''': improved surface adhesion for etching and plating applications, photosensitivity is broad and low, spinnable to 6 - 20 µm.([https://www.microchemicals.com/products/photoresists/az_p4620.html Product Page])<br />
<br />
SU8 Photoresists are no longer provided by KNI (SU8 Developer IS provided by KNI):<br />
<br />
<br />
<br />
'''''Reminder of lamp intensities:'''''<br />
<br />
'''Suss 1 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 15 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 25 mW/cm2.<br />
'''Suss 2 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 10 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 15 mW/cm2.<br />
<br />
'''''Reminder of room conditioning:'''''<br />
<br />
* Temperature is specified to 68±1° F in the photolithography and surrounding rooms.<br />
* Humidity is typically 50% in the photolithography room, KNI is specified to 40-70%. Remember that moving resist coated samples to dryer rooms, they will need to rehydrate over some time period.<br />
<br />
==Positive Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | S1813 || Dehydrate on hot plate || 3000rpm || 1.6μm || 115°C 1min || 8-10s || - || - || MF 319 45-60s || - || Suss1 Ch2 || [https://caltech.app.box.com/s/3pa2im5jj1e86rdozwigt8yfnb8fi5k3 Measured 11/19]<br />
|-<br />
| Dehydrate on hot plate || 5000rpm || 1.1μm || 115°C 1min || 8-10s || - || - || MF 319 45-60s || - || Suss1 Ch2 || [https://caltech.app.box.com/s/3pa2im5jj1e86rdozwigt8yfnb8fi5k3 Measured 11/19]<br />
|-<br />
| AZ 5214 || Dehydrate on hot plate || 3500rpm || 1.4μm || 100°C 1min || 25s || - || - || MF319 60s || - || Suss1 Ch1 || [https://caltech.box.com/s/5ls5rk4oanod66pfilsuendthutcmfqu Measured 10/19]<br />
|-<br />
| AZ 9260 || Dehydrate on hot plate || 3000rpm || 8μm || 110°C 165s || 100s || - || - || MF319 12min || - || Suss2 Ch2 || Measured 1/20<br />
|}<br />
<br />
==Negative Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | AZ5214 || Dehydrate on hot plate || 2000rpm || 1.8μm || 100°C 1min || 12s || 110°C 45-60s || 40s || MF319 60s || - || Suss1 Ch1 || [https://caltech.box.com/s/5ls5rk4oanod66pfilsuendthutcmfqu Measured 10/19]<br />
|-<br />
| Dehydrate on hot plate || 3500rpm || 1.4μm || 100°C 1min || 9s || 110°C 45-60s || 30s || MF319 60s || - || Suss1 Ch1 || [https://caltech.box.com/s/5ls5rk4oanod66pfilsuendthutcmfqu Measured 10/19]<br />
|-<br />
| nLoF 2070 || Dehydrate on hot plate || 2500rpm || 7um || 110C 90s || 12s || 110C 90s || - || AZ 726 2min || - || Suss1 Ch1 || [https://caltech.app.box.com/file/571703050359 Measured 12/19]<br />
|}<br />
<br />
=Other Photoresists=<br />
<br />
*[https://cleanroom.byu.edu/resistmanufacturers BYU Comprehensive list of photoresists]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes UCSB Photoresist Recipes Page 1]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Contact_Alignment_Recipes UCSB Photoresist Recipes Page 2]<br />
<br />
*[https://cleanroom.byu.edu/photoresists BYU Photoresist Recipes]<br />
<br />
*'''SU-8 2002, 2025, 2075, 2100, 3025, 3050''': epoxy-based negative resist. Optimal for tall high-aspect ratio permanent structures. ([https://kayakuam.com/products/su-8-photoresists/ Manufacturer Spec Sheet ]). Difficult to remove. Spinnable to 1.5-200μm thickness. <br />
<br />
==Non-KNI Photoresist Recipes==<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| SPR 220-7.0 || - || - || - || - || - || - || - || - || - || - || Measured 10/19<br />
|-<br />
|}<br />
<br />
==SU-8 Recipes==<br />
<br />
SU-8 is available in thicknesses ranging from 500nm to 500microns. Remember to use Laurel Spinner 1 and develop in the Wet Chemistry room on the Solvent Bench.<br />
<br />
[https://cleanroom.byu.edu/su8 BYU SU-8 Guide]<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| 2002 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| 2025 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| 2100 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || Measured 10/19<br />
|}<br />
<br />
=KNI Developers=<br />
<br />
These developers can be used on the Develop Bench in the Optical Lithography room or on the BASE Bench in the Wet Chemistry room:<br />
<br />
*'''AZ 726 MIF''': 2.38% TMAH-based, pre-diluted (ready-to-use) and slightly further diluted only when the application requires it. Contains surfactants to improve development uniformity, so avoid stirring. MIF identifies the developer as 'Metal Ion Free' as it does not contain potassium as in KOH-based developers, it is based on TMAH, an ammonium salt, which prevents metal contamination of semiconductors. 726 is a recommended developer for almost all AZ resists [https://www.microchemicals.com/technical_information/development_photoresist.pdf MicroChemicals Development Application Note]<br />
<br />
*'''Microposit MF 319''': (Metal-Free) TMAH: 2.45%, Polyalkylene glycol <1%, pH: 13. Paired to Shipley/Microposit 1800 series resists, S1805,S1813,S1818 [https://cpb-us-e1.wpmucdn.com/sites.usc.edu/dist/a/194/files/2018/07/MF-319-Developer-1iqbk7y.pdf MSDS]<br />
<br />
*'''Microposit CD-26''': TMAH <5.0 % , pH 13, Also 1800 series targeted, no additional surfactants.<br />
<br />
*'''AZ 400K''': KOH-based. "The recommended dilutions for the AZ® 400 K or AZ® 351 B for most of the processes are developer concentrate : Water = 1: . For very thick resist films, up to a 1:3 ratio can be applied [with lower contrast], with a very fine (sub-µm) structures, a 1:5 or 1:6 ratio can support a high resolution using thin resist films." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note] Users can adjust dilution for accuracy and length of time they will tolerate.<br />
**Critical note on KOH use: "Incompatibilities between MIC and MIF Developers Even small traces of TMAH-based metal ion-free developers such as the AZ® 326 MIF, 726 MIF or 826 MIF) can significantly reduce the development rate of metal ion-containing developers (such as the AZ® 400K or 351B). If both types of developers are used, extremely clean work is to be ensured to prevent mutual contamination even in the ppm range, such as in the dispensing system or developer containers." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note]<br />
<br />
*'''Microposit 2401''': Legacy developer<br />
<br />
<br />
SU-8 developer can ONLY be used on the SOLVENT Bench in the Wet Chemistry room:<br />
<br />
*'''SU-8 Developer''': (Organic Solvent Solution) 1-Methoxy-2-propanol acetate, >99.5%, Synonym propylene glycol monomethyl ether acetate 2-Methoxy-1-propanol acetate, <0.5%. [https://caltech.app.box.com/s/avqs14mt28i1epom0n6w37p55rjqvkbe MSDS] Paired to SU8 series resists. <br />
<br />
<br />
===Surfactants===<br />
<br />
Surfactants were developed and added in the 1980s to photoresist developers to combat photoresists' hydrophobic surfaces which cause "hot spots" of fast development. They reduce the surface tension and improve wetting (giving homogeneous development). The common drawback of their inclusion is foaming and an oily nature which makes them incompatible with some agitated processes. Surfactacts also change development speed since they coat photoresist surfaces and inhibit the dissolution reaction. As such exposure-development times must be adjusted and while contrast is improved, resolution may be lost. See here for more in depth discussion: [http://www.lithoguru.com/scientist/litho_tutor/TUTOR09%20(Winter%2095).pdf The Lithography Tutor: Photoresist Development]<br />
<br />
=Addtional Photolithography Resources=<br />
<br />
*[https://cleanroom.byu.edu/processes#Microfab_PhotoLith BYU Photolithography Guide]<br />
<br />
*[https://kayakuam.com/techreferences/lithography-terms/ Lithography Terminology]<br />
<br />
*[https://cleanroom.byu.edu/definitions Lithography Terminology 2]<br />
<br />
*[https://pages.mtu.edu/~microweb/chap1/ch1-4-1.htm Resolution Limits of Photolithography]</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Optical_Lithography_Resources&diff=2119Optical Lithography Resources2019-12-28T17:01:07Z<p>Dvin: /* Negative Photoresist Recipes */</p>
<hr />
<div>'''[https://www.microchemicals.com/downloads/application_notes.html Trove of lithography application notes from MicroChemicals covering troubleshooting, procedures, techniques, theory]'''<br />
<br />
=KNI Photoresists=<br />
<br />
Photoresists provided by KNI:<br />
<br />
*'''S1805, 1813, 1818''': field standard positive, may be used for liftoff and withstands some acid etching. Designed with lower toxicity materials. ([https://kayakuam.com/wp-content/uploads/2019/09/S1800-G2.pdf Manufacturer Spec Sheet]) Shipley 1800 series 0.5-1.9μm range available. 0.5-3.2μm available from manufacturer. Suitable for multiple applications but not niche optimized as latter resists.<br />
*'''AZ 5214''': exposable as positive and image reversal negative. Optimized for liftoff processes with negative sidewall profile. Structure is stable to 130°C after postbake. 1-2μm thickness ([https://www.microchemicals.com/micro/tds_az_nlof2000_series.pdf Manufacturer Spec Sheet])<br />
*'''AZ 9245, 9260''': Intended for thick positive structures 4-20μm. Lower optical absorption and sensitivity permits tall structures but development is slow. ([https://www.microchemicals.com/products/photoresists/az_9260.html Product Page])<br />
*'''AZ nLof 2020, 2035, 2070''': Also optimized for liftoff processes but thicker than 5214 at 2-7μm spinnable. Structures can be made stable to 250°C. High chemical stability, e-beam exposable, but more difficult to remove. ([https://www.microchemicals.com/products/photoresists/az_nlof_2020.html Product Page])<br />
*'''AZ 3330-F''': medium resolution resist, high thermal stability, optimized for metal RIE etch or plating process environments. 1.0-5.0µm spinnable ([http://www.imicromaterials.com/index.php/products/ig-line-photoresists/az-3300-series Product Page])<br />
*'''AZ 4620''': improved surface adhesion for etching and plating applications, photosensitivity is broad and low, spinnable to 6 - 20 µm.([https://www.microchemicals.com/products/photoresists/az_p4620.html Product Page])<br />
<br />
SU8 Photoresists are no longer provided by KNI (SU8 Developer IS provided by KNI):<br />
<br />
*'''SU-8 2002, 2025, 2075, 2100, 3025, 3050''': epoxy-based negative resist. Optimal for tall high-aspect ratio permanent structures. ([https://kayakuam.com/products/su-8-photoresists/ Manufacturer Spec Sheet ]). Difficult to remove. Spinnable to 1.5-200μm thickness. <br />
<br />
<br />
<br />
'''''Reminder of lamp intensities:'''''<br />
<br />
'''Suss 1 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 15 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 25 mW/cm2.<br />
'''Suss 2 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 10 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 15 mW/cm2.<br />
<br />
'''''Reminder of room conditioning:'''''<br />
<br />
* Temperature is specified to 68±1° F in the photolithography and surrounding rooms.<br />
* Humidity is typically 50% in the photolithography room, KNI is specified to 40-70%. Remember that moving resist coated samples to dryer rooms, they will need to rehydrate over some time period.<br />
<br />
==Positive Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | S1813 || Dehydrate on hot plate || 3000rpm || 1.6μm || 115°C 1min || 8-10s || - || - || MF 319 45-60s || - || Suss1 Ch2 || [https://caltech.app.box.com/s/3pa2im5jj1e86rdozwigt8yfnb8fi5k3 Measured 11/19]<br />
|-<br />
| Dehydrate on hot plate || 5000rpm || 1.1μm || 115°C 1min || 8-10s || - || - || MF 319 45-60s || - || Suss1 Ch2 || [https://caltech.app.box.com/s/3pa2im5jj1e86rdozwigt8yfnb8fi5k3 Measured 11/19]<br />
|-<br />
| AZ 5214 || Dehydrate on hot plate || 3500rpm || 1.4μm || 100°C 1min || 25s || - || - || MF319 60s || - || Suss1 Ch1 || [https://caltech.box.com/s/5ls5rk4oanod66pfilsuendthutcmfqu Measured 10/19]<br />
|-<br />
| AZ 9260 || Dehydrate on hot plate || 3000rpm || 8μm || 110°C 165s || 100s || - || - || MF319 12min || - || Suss2 Ch2 || Measured 1/20<br />
|}<br />
<br />
==Negative Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | AZ5214 || Dehydrate on hot plate || 2000rpm || 1.8μm || 100°C 1min || 12s || 110°C 45-60s || 40s || MF319 60s || - || Suss1 Ch1 || [https://caltech.box.com/s/5ls5rk4oanod66pfilsuendthutcmfqu Measured 10/19]<br />
|-<br />
| Dehydrate on hot plate || 3500rpm || 1.4μm || 100°C 1min || 9s || 110°C 45-60s || 30s || MF319 60s || - || Suss1 Ch1 || [https://caltech.box.com/s/5ls5rk4oanod66pfilsuendthutcmfqu Measured 10/19]<br />
|-<br />
| nLoF 2070 || Dehydrate on hot plate || 2500rpm || 7um || 110C 90s || 12s || 110C 90s || - || AZ 726 2min || - || Suss1 Ch1 || [https://caltech.app.box.com/file/571703050359 Measured 12/19]<br />
|}<br />
<br />
==SU-8 Recipes==<br />
<br />
SU-8 is available in thicknesses ranging from 500nm to 500microns. Remember to use Laurel Spinner 1 and develop in the Wet Chemistry room on the Solvent Bench.<br />
<br />
[https://cleanroom.byu.edu/su8 BYU SU-8 Guide]<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| 2002 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| 2025 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| 2100 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || Measured 10/19<br />
|}<br />
<br />
=Other Photoresists=<br />
<br />
*[https://cleanroom.byu.edu/resistmanufacturers BYU Comprehensive list of photoresists]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes UCSB Photoresist Recipes Page 1]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Contact_Alignment_Recipes UCSB Photoresist Recipes Page 2]<br />
<br />
*[https://cleanroom.byu.edu/photoresists BYU Photoresist Recipes]<br />
<br />
==Non-KNI Photoresist Recipes==<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| SPR 220-7.0 || - || - || - || - || - || - || - || - || - || - || Measured 10/19<br />
|-<br />
|}<br />
<br />
=KNI Developers=<br />
<br />
These developers can be used on the Develop Bench in the Optical Lithography room or on the BASE Bench in the Wet Chemistry room:<br />
<br />
*'''AZ 726 MIF''': 2.38% TMAH-based, pre-diluted (ready-to-use) and slightly further diluted only when the application requires it. Contains surfactants to improve development uniformity, so avoid stirring. MIF identifies the developer as 'Metal Ion Free' as it does not contain potassium as in KOH-based developers, it is based on TMAH, an ammonium salt, which prevents metal contamination of semiconductors. 726 is a recommended developer for almost all AZ resists [https://www.microchemicals.com/technical_information/development_photoresist.pdf MicroChemicals Development Application Note]<br />
<br />
*'''Microposit MF 319''': (Metal-Free) TMAH: 2.45%, Polyalkylene glycol <1%, pH: 13. Paired to Shipley/Microposit 1800 series resists, S1805,S1813,S1818 [https://cpb-us-e1.wpmucdn.com/sites.usc.edu/dist/a/194/files/2018/07/MF-319-Developer-1iqbk7y.pdf MSDS]<br />
<br />
*'''Microposit CD-26''': TMAH <5.0 % , pH 13, Also 1800 series targeted, no additional surfactants.<br />
<br />
*'''AZ 400K''': KOH-based. "The recommended dilutions for the AZ® 400 K or AZ® 351 B for most of the processes are developer concentrate : Water = 1: . For very thick resist films, up to a 1:3 ratio can be applied [with lower contrast], with a very fine (sub-µm) structures, a 1:5 or 1:6 ratio can support a high resolution using thin resist films." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note] Users can adjust dilution for accuracy and length of time they will tolerate.<br />
**Critical note on KOH use: "Incompatibilities between MIC and MIF Developers Even small traces of TMAH-based metal ion-free developers such as the AZ® 326 MIF, 726 MIF or 826 MIF) can significantly reduce the development rate of metal ion-containing developers (such as the AZ® 400K or 351B). If both types of developers are used, extremely clean work is to be ensured to prevent mutual contamination even in the ppm range, such as in the dispensing system or developer containers." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note]<br />
<br />
*'''Microposit 2401''': Legacy developer<br />
<br />
<br />
SU-8 developer can ONLY be used on the SOLVENT Bench in the Wet Chemistry room:<br />
<br />
*'''SU-8 Developer''': (Organic Solvent Solution) 1-Methoxy-2-propanol acetate, >99.5%, Synonym propylene glycol monomethyl ether acetate 2-Methoxy-1-propanol acetate, <0.5%. [https://caltech.app.box.com/s/avqs14mt28i1epom0n6w37p55rjqvkbe MSDS] Paired to SU8 series resists. <br />
<br />
<br />
===Surfactants===<br />
<br />
Surfactants were developed and added in the 1980s to photoresist developers to combat photoresists' hydrophobic surfaces which cause "hot spots" of fast development. They reduce the surface tension and improve wetting (giving homogeneous development). The common drawback of their inclusion is foaming and an oily nature which makes them incompatible with some agitated processes. Surfactacts also change development speed since they coat photoresist surfaces and inhibit the dissolution reaction. As such exposure-development times must be adjusted and while contrast is improved, resolution may be lost. See here for more in depth discussion: [http://www.lithoguru.com/scientist/litho_tutor/TUTOR09%20(Winter%2095).pdf The Lithography Tutor: Photoresist Development]<br />
<br />
=Addtional Photolithography Resources=<br />
<br />
*[https://cleanroom.byu.edu/processes#Microfab_PhotoLith BYU Photolithography Guide]<br />
<br />
*[https://kayakuam.com/techreferences/lithography-terms/ Lithography Terminology]<br />
<br />
*[https://cleanroom.byu.edu/definitions Lithography Terminology 2]<br />
<br />
*[https://pages.mtu.edu/~microweb/chap1/ch1-4-1.htm Resolution Limits of Photolithography]</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Optical_Lithography_Resources&diff=2118Optical Lithography Resources2019-12-28T16:58:29Z<p>Dvin: /* Positive Photoresist Recipes */</p>
<hr />
<div>'''[https://www.microchemicals.com/downloads/application_notes.html Trove of lithography application notes from MicroChemicals covering troubleshooting, procedures, techniques, theory]'''<br />
<br />
=KNI Photoresists=<br />
<br />
Photoresists provided by KNI:<br />
<br />
*'''S1805, 1813, 1818''': field standard positive, may be used for liftoff and withstands some acid etching. Designed with lower toxicity materials. ([https://kayakuam.com/wp-content/uploads/2019/09/S1800-G2.pdf Manufacturer Spec Sheet]) Shipley 1800 series 0.5-1.9μm range available. 0.5-3.2μm available from manufacturer. Suitable for multiple applications but not niche optimized as latter resists.<br />
*'''AZ 5214''': exposable as positive and image reversal negative. Optimized for liftoff processes with negative sidewall profile. Structure is stable to 130°C after postbake. 1-2μm thickness ([https://www.microchemicals.com/micro/tds_az_nlof2000_series.pdf Manufacturer Spec Sheet])<br />
*'''AZ 9245, 9260''': Intended for thick positive structures 4-20μm. Lower optical absorption and sensitivity permits tall structures but development is slow. ([https://www.microchemicals.com/products/photoresists/az_9260.html Product Page])<br />
*'''AZ nLof 2020, 2035, 2070''': Also optimized for liftoff processes but thicker than 5214 at 2-7μm spinnable. Structures can be made stable to 250°C. High chemical stability, e-beam exposable, but more difficult to remove. ([https://www.microchemicals.com/products/photoresists/az_nlof_2020.html Product Page])<br />
*'''AZ 3330-F''': medium resolution resist, high thermal stability, optimized for metal RIE etch or plating process environments. 1.0-5.0µm spinnable ([http://www.imicromaterials.com/index.php/products/ig-line-photoresists/az-3300-series Product Page])<br />
*'''AZ 4620''': improved surface adhesion for etching and plating applications, photosensitivity is broad and low, spinnable to 6 - 20 µm.([https://www.microchemicals.com/products/photoresists/az_p4620.html Product Page])<br />
<br />
SU8 Photoresists are no longer provided by KNI (SU8 Developer IS provided by KNI):<br />
<br />
*'''SU-8 2002, 2025, 2075, 2100, 3025, 3050''': epoxy-based negative resist. Optimal for tall high-aspect ratio permanent structures. ([https://kayakuam.com/products/su-8-photoresists/ Manufacturer Spec Sheet ]). Difficult to remove. Spinnable to 1.5-200μm thickness. <br />
<br />
<br />
<br />
'''''Reminder of lamp intensities:'''''<br />
<br />
'''Suss 1 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 15 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 25 mW/cm2.<br />
'''Suss 2 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 10 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 15 mW/cm2.<br />
<br />
'''''Reminder of room conditioning:'''''<br />
<br />
* Temperature is specified to 68±1° F in the photolithography and surrounding rooms.<br />
* Humidity is typically 50% in the photolithography room, KNI is specified to 40-70%. Remember that moving resist coated samples to dryer rooms, they will need to rehydrate over some time period.<br />
<br />
==Positive Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | S1813 || Dehydrate on hot plate || 3000rpm || 1.6μm || 115°C 1min || 8-10s || - || - || MF 319 45-60s || - || Suss1 Ch2 || [https://caltech.app.box.com/s/3pa2im5jj1e86rdozwigt8yfnb8fi5k3 Measured 11/19]<br />
|-<br />
| Dehydrate on hot plate || 5000rpm || 1.1μm || 115°C 1min || 8-10s || - || - || MF 319 45-60s || - || Suss1 Ch2 || [https://caltech.app.box.com/s/3pa2im5jj1e86rdozwigt8yfnb8fi5k3 Measured 11/19]<br />
|-<br />
| AZ 5214 || Dehydrate on hot plate || 3500rpm || 1.4μm || 100°C 1min || 25s || - || - || MF319 60s || - || Suss1 Ch1 || [https://caltech.box.com/s/5ls5rk4oanod66pfilsuendthutcmfqu Measured 10/19]<br />
|-<br />
| AZ 9260 || Dehydrate on hot plate || 3000rpm || 8μm || 110°C 165s || 100s || - || - || MF319 12min || - || Suss2 Ch2 || Measured 1/20<br />
|}<br />
<br />
==Negative Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | AZ5214 || Dehydrate on hot plate || 2000rpm || 1.8μm || 100°C 1min || 12s || 110°C 45-60s || 40s || MF319 60s || - || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| Dehydrate on hot plate || 3500rpm || 1.4μm || 100°C 1min || 9s || 110°C 45-60s || 30s || MF319 60s || - || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| nLoF 2070 || Dehydrate on hot plate || 2500rpm || 7um || 110C 90s || 12s || 110C 90s || - || AZ 726 2min || - || Suss1 Ch1 || Measured 10/19<br />
|}<br />
<br />
==SU-8 Recipes==<br />
<br />
SU-8 is available in thicknesses ranging from 500nm to 500microns. Remember to use Laurel Spinner 1 and develop in the Wet Chemistry room on the Solvent Bench.<br />
<br />
[https://cleanroom.byu.edu/su8 BYU SU-8 Guide]<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| 2002 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| 2025 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| 2100 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || Measured 10/19<br />
|}<br />
<br />
=Other Photoresists=<br />
<br />
*[https://cleanroom.byu.edu/resistmanufacturers BYU Comprehensive list of photoresists]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes UCSB Photoresist Recipes Page 1]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Contact_Alignment_Recipes UCSB Photoresist Recipes Page 2]<br />
<br />
*[https://cleanroom.byu.edu/photoresists BYU Photoresist Recipes]<br />
<br />
==Non-KNI Photoresist Recipes==<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| SPR 220-7.0 || - || - || - || - || - || - || - || - || - || - || Measured 10/19<br />
|-<br />
|}<br />
<br />
=KNI Developers=<br />
<br />
These developers can be used on the Develop Bench in the Optical Lithography room or on the BASE Bench in the Wet Chemistry room:<br />
<br />
*'''AZ 726 MIF''': 2.38% TMAH-based, pre-diluted (ready-to-use) and slightly further diluted only when the application requires it. Contains surfactants to improve development uniformity, so avoid stirring. MIF identifies the developer as 'Metal Ion Free' as it does not contain potassium as in KOH-based developers, it is based on TMAH, an ammonium salt, which prevents metal contamination of semiconductors. 726 is a recommended developer for almost all AZ resists [https://www.microchemicals.com/technical_information/development_photoresist.pdf MicroChemicals Development Application Note]<br />
<br />
*'''Microposit MF 319''': (Metal-Free) TMAH: 2.45%, Polyalkylene glycol <1%, pH: 13. Paired to Shipley/Microposit 1800 series resists, S1805,S1813,S1818 [https://cpb-us-e1.wpmucdn.com/sites.usc.edu/dist/a/194/files/2018/07/MF-319-Developer-1iqbk7y.pdf MSDS]<br />
<br />
*'''Microposit CD-26''': TMAH <5.0 % , pH 13, Also 1800 series targeted, no additional surfactants.<br />
<br />
*'''AZ 400K''': KOH-based. "The recommended dilutions for the AZ® 400 K or AZ® 351 B for most of the processes are developer concentrate : Water = 1: . For very thick resist films, up to a 1:3 ratio can be applied [with lower contrast], with a very fine (sub-µm) structures, a 1:5 or 1:6 ratio can support a high resolution using thin resist films." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note] Users can adjust dilution for accuracy and length of time they will tolerate.<br />
**Critical note on KOH use: "Incompatibilities between MIC and MIF Developers Even small traces of TMAH-based metal ion-free developers such as the AZ® 326 MIF, 726 MIF or 826 MIF) can significantly reduce the development rate of metal ion-containing developers (such as the AZ® 400K or 351B). If both types of developers are used, extremely clean work is to be ensured to prevent mutual contamination even in the ppm range, such as in the dispensing system or developer containers." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note]<br />
<br />
*'''Microposit 2401''': Legacy developer<br />
<br />
<br />
SU-8 developer can ONLY be used on the SOLVENT Bench in the Wet Chemistry room:<br />
<br />
*'''SU-8 Developer''': (Organic Solvent Solution) 1-Methoxy-2-propanol acetate, >99.5%, Synonym propylene glycol monomethyl ether acetate 2-Methoxy-1-propanol acetate, <0.5%. [https://caltech.app.box.com/s/avqs14mt28i1epom0n6w37p55rjqvkbe MSDS] Paired to SU8 series resists. <br />
<br />
<br />
===Surfactants===<br />
<br />
Surfactants were developed and added in the 1980s to photoresist developers to combat photoresists' hydrophobic surfaces which cause "hot spots" of fast development. They reduce the surface tension and improve wetting (giving homogeneous development). The common drawback of their inclusion is foaming and an oily nature which makes them incompatible with some agitated processes. Surfactacts also change development speed since they coat photoresist surfaces and inhibit the dissolution reaction. As such exposure-development times must be adjusted and while contrast is improved, resolution may be lost. See here for more in depth discussion: [http://www.lithoguru.com/scientist/litho_tutor/TUTOR09%20(Winter%2095).pdf The Lithography Tutor: Photoresist Development]<br />
<br />
=Addtional Photolithography Resources=<br />
<br />
*[https://cleanroom.byu.edu/processes#Microfab_PhotoLith BYU Photolithography Guide]<br />
<br />
*[https://kayakuam.com/techreferences/lithography-terms/ Lithography Terminology]<br />
<br />
*[https://cleanroom.byu.edu/definitions Lithography Terminology 2]<br />
<br />
*[https://pages.mtu.edu/~microweb/chap1/ch1-4-1.htm Resolution Limits of Photolithography]</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Optical_Lithography_Resources&diff=2108Optical Lithography Resources2019-12-09T22:26:01Z<p>Dvin: /* KNI Photoresists */</p>
<hr />
<div>'''[https://www.microchemicals.com/downloads/application_notes.html Trove of lithography application notes from MicroChemicals covering troubleshooting, procedures, techniques, theory]'''<br />
<br />
=KNI Photoresists=<br />
<br />
Photoresists provided by KNI:<br />
<br />
*'''S1805, 1813, 1818''': field standard positive, may be used for liftoff and withstands some acid etching. Designed with lower toxicity materials. ([https://kayakuam.com/wp-content/uploads/2019/09/S1800-G2.pdf Manufacturer Spec Sheet]) Shipley 1800 series 0.5-1.9μm range available. 0.5-3.2μm available from manufacturer. Suitable for multiple applications but not niche optimized as latter resists.<br />
*'''AZ 5214''': exposable as positive and image reversal negative. Optimized for liftoff processes with negative sidewall profile. Structure is stable to 130°C after postbake. 1-2μm thickness ([https://www.microchemicals.com/micro/tds_az_nlof2000_series.pdf Manufacturer Spec Sheet])<br />
*'''AZ 9245, 9260''': Intended for thick positive structures 4-20μm. Lower optical absorption and sensitivity permits tall structures but development is slow. ([https://www.microchemicals.com/products/photoresists/az_9260.html Product Page])<br />
*'''AZ nLof 2020, 2035, 2070''': Also optimized for liftoff processes but thicker than 5214 at 2-7μm spinnable. Structures can be made stable to 250°C. High chemical stability, e-beam exposable, but more difficult to remove. ([https://www.microchemicals.com/products/photoresists/az_nlof_2020.html Product Page])<br />
*'''AZ 3330-F''': medium resolution resist, high thermal stability, optimized for metal RIE etch or plating process environments. 1.0-5.0µm spinnable ([http://www.imicromaterials.com/index.php/products/ig-line-photoresists/az-3300-series Product Page])<br />
*'''AZ 4620''': improved surface adhesion for etching and plating applications, photosensitivity is broad and low, spinnable to 6 - 20 µm.([https://www.microchemicals.com/products/photoresists/az_p4620.html Product Page])<br />
<br />
SU8 Photoresists are no longer provided by KNI (SU8 Developer IS provided by KNI):<br />
<br />
*'''SU-8 2002, 2025, 2075, 2100, 3025, 3050''': epoxy-based negative resist. Optimal for tall high-aspect ratio permanent structures. ([https://kayakuam.com/products/su-8-photoresists/ Manufacturer Spec Sheet ]). Difficult to remove. Spinnable to 1.5-200μm thickness. <br />
<br />
<br />
<br />
'''''Reminder of lamp intensities:'''''<br />
<br />
'''Suss 1 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 15 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 25 mW/cm2.<br />
'''Suss 2 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 10 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 15 mW/cm2.<br />
<br />
'''''Reminder of room conditioning:'''''<br />
<br />
* Temperature is specified to 68±1° F in the photolithography and surrounding rooms.<br />
* Humidity is typically 50% in the photolithography room, KNI is specified to 40-70%. Remember that moving resist coated samples to dryer rooms, they will need to rehydrate over some time period.<br />
<br />
==Positive Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | S1813 || Dehydrate on hot plate || 3000rpm || 1.6μm || 115°C 1min || 8-10s || - || - || MF 319 45-60s || - || Suss1 Ch2 || Measured 12/19 (Link KNI recipe doc here)<br />
|-<br />
| Dehydrate on hot plate || 5000rpm || 1.1μm || 115°C 1min || 8-10s || - || - || MF 319 45-60s || - || Suss1 Ch2 || Measured 12/19<br />
|-<br />
| AZ 5214 || Dehydrate on hot plate || 3500rpm || 1.4μm || 100°C 1min || 25s || - || - || MF319 60s || - || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| AZ 9260 || Dehydrate on hot plate || 3000rpm || 8μm || 110°C 165s || 100s || - || - || MF319 12min || - || Suss2 Ch2 || Measured 10/19<br />
|}<br />
<br />
==Negative Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | AZ5214 || Dehydrate on hot plate || 2000rpm || 1.8μm || 100°C 1min || 12s || 110°C 45-60s || 40s || MF319 60s || - || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| Dehydrate on hot plate || 3500rpm || 1.4μm || 100°C 1min || 9s || 110°C 45-60s || 30s || MF319 60s || - || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| nLoF 2070 || Dehydrate on hot plate || 2500rpm || 7um || 110C 90s || 12s || 110C 90s || - || AZ 726 2min || - || Suss1 Ch1 || Measured 10/19<br />
|}<br />
<br />
==SU-8 Recipes==<br />
<br />
SU-8 is available in thicknesses ranging from 500nm to 500microns. Remember to use Laurel Spinner 1 and develop in the Wet Chemistry room on the Solvent Bench.<br />
<br />
[https://cleanroom.byu.edu/su8 BYU SU-8 Guide]<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| 2002 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| 2025 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| 2100 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || Measured 10/19<br />
|}<br />
<br />
=Other Photoresists=<br />
<br />
*[https://cleanroom.byu.edu/resistmanufacturers BYU Comprehensive list of photoresists]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes UCSB Photoresist Recipes Page 1]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Contact_Alignment_Recipes UCSB Photoresist Recipes Page 2]<br />
<br />
*[https://cleanroom.byu.edu/photoresists BYU Photoresist Recipes]<br />
<br />
==Non-KNI Photoresist Recipes==<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| SPR 220-7.0 || - || - || - || - || - || - || - || - || - || - || Measured 10/19<br />
|-<br />
|}<br />
<br />
=KNI Developers=<br />
<br />
These developers can be used on the Develop Bench in the Optical Lithography room or on the BASE Bench in the Wet Chemistry room:<br />
<br />
*'''AZ 726 MIF''': 2.38% TMAH-based, pre-diluted (ready-to-use) and slightly further diluted only when the application requires it. Contains surfactants to improve development uniformity, so avoid stirring. MIF identifies the developer as 'Metal Ion Free' as it does not contain potassium as in KOH-based developers, it is based on TMAH, an ammonium salt, which prevents metal contamination of semiconductors. 726 is a recommended developer for almost all AZ resists [https://www.microchemicals.com/technical_information/development_photoresist.pdf MicroChemicals Development Application Note]<br />
<br />
*'''Microposit MF 319''': (Metal-Free) TMAH: 2.45%, Polyalkylene glycol <1%, pH: 13. Paired to Shipley/Microposit 1800 series resists, S1805,S1813,S1818 [https://cpb-us-e1.wpmucdn.com/sites.usc.edu/dist/a/194/files/2018/07/MF-319-Developer-1iqbk7y.pdf MSDS]<br />
<br />
*'''Microposit CD-26''': TMAH <5.0 % , pH 13, Also 1800 series targeted, no additional surfactants.<br />
<br />
*'''AZ 400K''': KOH-based. "The recommended dilutions for the AZ® 400 K or AZ® 351 B for most of the processes are developer concentrate : Water = 1: . For very thick resist films, up to a 1:3 ratio can be applied [with lower contrast], with a very fine (sub-µm) structures, a 1:5 or 1:6 ratio can support a high resolution using thin resist films." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note] Users can adjust dilution for accuracy and length of time they will tolerate.<br />
**Critical note on KOH use: "Incompatibilities between MIC and MIF Developers Even small traces of TMAH-based metal ion-free developers such as the AZ® 326 MIF, 726 MIF or 826 MIF) can significantly reduce the development rate of metal ion-containing developers (such as the AZ® 400K or 351B). If both types of developers are used, extremely clean work is to be ensured to prevent mutual contamination even in the ppm range, such as in the dispensing system or developer containers." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note]<br />
<br />
*'''Microposit 2401''': Legacy developer<br />
<br />
<br />
SU-8 developer can ONLY be used on the SOLVENT Bench in the Wet Chemistry room:<br />
<br />
*'''SU-8 Developer''': (Organic Solvent Solution) 1-Methoxy-2-propanol acetate, >99.5%, Synonym propylene glycol monomethyl ether acetate 2-Methoxy-1-propanol acetate, <0.5%. [https://caltech.app.box.com/s/avqs14mt28i1epom0n6w37p55rjqvkbe MSDS] Paired to SU8 series resists. <br />
<br />
<br />
===Surfactants===<br />
<br />
Surfactants were developed and added in the 1980s to photoresist developers to combat photoresists' hydrophobic surfaces which cause "hot spots" of fast development. They reduce the surface tension and improve wetting (giving homogeneous development). The common drawback of their inclusion is foaming and an oily nature which makes them incompatible with some agitated processes. Surfactacts also change development speed since they coat photoresist surfaces and inhibit the dissolution reaction. As such exposure-development times must be adjusted and while contrast is improved, resolution may be lost. See here for more in depth discussion: [http://www.lithoguru.com/scientist/litho_tutor/TUTOR09%20(Winter%2095).pdf The Lithography Tutor: Photoresist Development]<br />
<br />
=Addtional Photolithography Resources=<br />
<br />
*[https://cleanroom.byu.edu/processes#Microfab_PhotoLith BYU Photolithography Guide]<br />
<br />
*[https://kayakuam.com/techreferences/lithography-terms/ Lithography Terminology]<br />
<br />
*[https://cleanroom.byu.edu/definitions Lithography Terminology 2]<br />
<br />
*[https://pages.mtu.edu/~microweb/chap1/ch1-4-1.htm Resolution Limits of Photolithography]</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Optical_Lithography_Resources&diff=2107Optical Lithography Resources2019-12-09T21:53:17Z<p>Dvin: /* KNI Photoresists */</p>
<hr />
<div>'''[https://www.microchemicals.com/downloads/application_notes.html Trove of lithography application notes from MicroChemicals covering troubleshooting, procedures, techniques, theory]'''<br />
<br />
=KNI Photoresists=<br />
<br />
Photoresists provided by KNI:<br />
<br />
*'''S1805, 1813, 1818''': field standard positive, may be used for liftoff and withstands some acid etching. Designed with lower toxicity materials. ([https://kayakuam.com/wp-content/uploads/2019/09/S1800-G2.pdf Manufacturer Spec Sheet]) Shipley 1800 series 0.5-1.9μm range available. 0.5-3.2μm available from manufacturer. Suitable for multiple applications but not niche optimized as latter resists.<br />
*'''AZ 5214''': exposable as positive and image reversal negative. Optimized for liftoff processes with negative sidewall profile. Structure is stable to 130°C after postbake. 1-2μm thickness ([https://www.microchemicals.com/micro/tds_az_nlof2000_series.pdf Manufacturer Spec Sheet])<br />
*'''AZ 9245, 9260''': Intended for thick positive structures 4-20μm. Lower optical absorption and sensitivity permits tall structures but development is slow. ([https://www.microchemicals.com/products/photoresists/az_9260.html Product Page])<br />
*'''AZ nLof 2020, 2035, 2070''': Also optimized for liftoff processes but thicker than 5214 at 2-7μm spinnable. Structures can be made stable to 250°C. High chemical stability, e-beam exposable, but more difficult to remove. ([https://www.microchemicals.com/products/photoresists/az_nlof_2020.html Product Page])<br />
*'''AZ 3330-F''': medium resolution resist, high thermal stability, optimized for metal RIE etch or plating process environments. 1.0-5.0µm spinnable ([http://www.imicromaterials.com/index.php/products/ig-line-photoresists/az-3300-series Product Page])<br />
*'''AZ 4620''': improved surface adhesion for etching and plating applications, photosensitivity is broad and low, spinnable to 6 - 20 µm.([https://www.microchemicals.com/products/photoresists/az_p4620.html Product Page])<br />
<br />
SU8 Photoresists are no longer provided by KNI (SU8 Developer IS provided by KNI):<br />
<br />
*'''SU-8 2002, 2025, 2075, 2100, 3025, 3050''': epoxy-based negative resist. Optimal for tall high-aspect ratio permanent structures. ([https://kayakuam.com/products/su-8-photoresists/ Manufacturer Spec Sheet ]). Difficult to remove. Spinnable to 1.5-200μm thickness. <br />
<br />
<br />
<br />
'''''Reminder of lamp intensities:'''''<br />
<br />
'''Suss 1 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 15 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 25 mW/cm2.<br />
'''Suss 2 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 10 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 15 mW/cm2.<br />
<br />
==Positive Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | S1813 || Dehydrate on hot plate || 3000rpm || 1.6μm || 115°C 1min || 8-10s || - || - || MF 319 45-60s || - || Suss1 Ch2 || Measured 12/19 (Link KNI recipe doc here)<br />
|-<br />
| Dehydrate on hot plate || 5000rpm || 1.1μm || 115°C 1min || 8-10s || - || - || MF 319 45-60s || - || Suss1 Ch2 || Measured 12/19<br />
|-<br />
| AZ 5214 || Dehydrate on hot plate || 3500rpm || 1.4μm || 100°C 1min || 25s || - || - || MF319 60s || - || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| AZ 9260 || Dehydrate on hot plate || 3000rpm || 8μm || 110°C 165s || 100s || - || - || MF319 12min || - || Suss2 Ch2 || Measured 10/19<br />
|}<br />
<br />
==Negative Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | AZ5214 || Dehydrate on hot plate || 2000rpm || 1.8μm || 100°C 1min || 12s || 110°C 45-60s || 40s || MF319 60s || - || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| Dehydrate on hot plate || 3500rpm || 1.4μm || 100°C 1min || 9s || 110°C 45-60s || 30s || MF319 60s || - || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| nLoF 2070 || Dehydrate on hot plate || 2500rpm || 7um || 110C 90s || 12s || 110C 90s || - || AZ 726 2min || - || Suss1 Ch1 || Measured 10/19<br />
|}<br />
<br />
==SU-8 Recipes==<br />
<br />
SU-8 is available in thicknesses ranging from 500nm to 500microns. Remember to use Laurel Spinner 1 and develop in the Wet Chemistry room on the Solvent Bench.<br />
<br />
[https://cleanroom.byu.edu/su8 BYU SU-8 Guide]<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| 2002 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| 2025 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| 2100 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || Measured 10/19<br />
|}<br />
<br />
=Other Photoresists=<br />
<br />
*[https://cleanroom.byu.edu/resistmanufacturers BYU Comprehensive list of photoresists]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes UCSB Photoresist Recipes Page 1]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Contact_Alignment_Recipes UCSB Photoresist Recipes Page 2]<br />
<br />
*[https://cleanroom.byu.edu/photoresists BYU Photoresist Recipes]<br />
<br />
==Non-KNI Photoresist Recipes==<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| SPR 220-7.0 || - || - || - || - || - || - || - || - || - || - || Measured 10/19<br />
|-<br />
|}<br />
<br />
=KNI Developers=<br />
<br />
These developers can be used on the Develop Bench in the Optical Lithography room or on the BASE Bench in the Wet Chemistry room:<br />
<br />
*'''AZ 726 MIF''': 2.38% TMAH-based, pre-diluted (ready-to-use) and slightly further diluted only when the application requires it. Contains surfactants to improve development uniformity, so avoid stirring. MIF identifies the developer as 'Metal Ion Free' as it does not contain potassium as in KOH-based developers, it is based on TMAH, an ammonium salt, which prevents metal contamination of semiconductors. 726 is a recommended developer for almost all AZ resists [https://www.microchemicals.com/technical_information/development_photoresist.pdf MicroChemicals Development Application Note]<br />
<br />
*'''Microposit MF 319''': (Metal-Free) TMAH: 2.45%, Polyalkylene glycol <1%, pH: 13. Paired to Shipley/Microposit 1800 series resists, S1805,S1813,S1818 [https://cpb-us-e1.wpmucdn.com/sites.usc.edu/dist/a/194/files/2018/07/MF-319-Developer-1iqbk7y.pdf MSDS]<br />
<br />
*'''Microposit CD-26''': TMAH <5.0 % , pH 13, Also 1800 series targeted, no additional surfactants.<br />
<br />
*'''AZ 400K''': KOH-based. "The recommended dilutions for the AZ® 400 K or AZ® 351 B for most of the processes are developer concentrate : Water = 1: . For very thick resist films, up to a 1:3 ratio can be applied [with lower contrast], with a very fine (sub-µm) structures, a 1:5 or 1:6 ratio can support a high resolution using thin resist films." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note] Users can adjust dilution for accuracy and length of time they will tolerate.<br />
**Critical note on KOH use: "Incompatibilities between MIC and MIF Developers Even small traces of TMAH-based metal ion-free developers such as the AZ® 326 MIF, 726 MIF or 826 MIF) can significantly reduce the development rate of metal ion-containing developers (such as the AZ® 400K or 351B). If both types of developers are used, extremely clean work is to be ensured to prevent mutual contamination even in the ppm range, such as in the dispensing system or developer containers." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note]<br />
<br />
*'''Microposit 2401''': Legacy developer<br />
<br />
<br />
SU-8 developer can ONLY be used on the SOLVENT Bench in the Wet Chemistry room:<br />
<br />
*'''SU-8 Developer''': (Organic Solvent Solution) 1-Methoxy-2-propanol acetate, >99.5%, Synonym propylene glycol monomethyl ether acetate 2-Methoxy-1-propanol acetate, <0.5%. [https://caltech.app.box.com/s/avqs14mt28i1epom0n6w37p55rjqvkbe MSDS] Paired to SU8 series resists. <br />
<br />
<br />
===Surfactants===<br />
<br />
Surfactants were developed and added in the 1980s to photoresist developers to combat photoresists' hydrophobic surfaces which cause "hot spots" of fast development. They reduce the surface tension and improve wetting (giving homogeneous development). The common drawback of their inclusion is foaming and an oily nature which makes them incompatible with some agitated processes. Surfactacts also change development speed since they coat photoresist surfaces and inhibit the dissolution reaction. As such exposure-development times must be adjusted and while contrast is improved, resolution may be lost. See here for more in depth discussion: [http://www.lithoguru.com/scientist/litho_tutor/TUTOR09%20(Winter%2095).pdf The Lithography Tutor: Photoresist Development]<br />
<br />
=Addtional Photolithography Resources=<br />
<br />
*[https://cleanroom.byu.edu/processes#Microfab_PhotoLith BYU Photolithography Guide]<br />
<br />
*[https://kayakuam.com/techreferences/lithography-terms/ Lithography Terminology]<br />
<br />
*[https://cleanroom.byu.edu/definitions Lithography Terminology 2]<br />
<br />
*[https://pages.mtu.edu/~microweb/chap1/ch1-4-1.htm Resolution Limits of Photolithography]</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Optical_Lithography_Resources&diff=2090Optical Lithography Resources2019-12-05T15:54:11Z<p>Dvin: </p>
<hr />
<div>'''[https://www.microchemicals.com/downloads/application_notes.html Trove of lithography application notes from MicroChemicals covering troubleshooting, procedures, techniques, theory]'''<br />
<br />
=KNI Photoresists=<br />
<br />
Photoresists provided by KNI:<br />
<br />
*'''S1805, 1813, 1818''': field standard positive, may be used for liftoff and withstands some acid etching. Designed with lower toxicity materials. ([https://kayakuam.com/wp-content/uploads/2019/09/S1800-G2.pdf Manufacturer Spec Sheet]) Shipley 1800 series 0.5-1.9μm range available. 0.5-3.2μm available from manufacturer<br />
*'''AZ 5214''': exposable as positive and image reversal negative. Optimized for liftoff processes with negative sidewall profile. Structure is stable to 130°C after postbake. 1-2μm thickness ([https://www.microchemicals.com/micro/tds_az_nlof2000_series.pdf Manufacturer Spec Sheet])<br />
*'''AZ 9245, 9260''': Intended for thick positive structures 4-20μm. Lower optical absorption and sensitivity permits tall structures but development is slow. ([https://www.microchemicals.com/products/photoresists/az_9260.html Produce Page])<br />
*'''AZ nLof 2020, 2035, 2070''': Also optimized for liftoff processes but thicker than 5214 at 2-7μm spinnable. Structures are stable to 250°C. High chemical stability, e-beam exposable, but more difficult to remove. ([https://www.microchemicals.com/products/photoresists/az_nlof_2020.html Product Page])<br />
*'''AZ 3330-F''': medium resolution resist, high thermal stability, optimized for metal RIE etch or plating process environments. 1.0-5.0µm spinnable ([http://www.imicromaterials.com/index.php/products/ig-line-photoresists/az-3300-series Product Page])<br />
*'''AZ 4620''': improved surface adhesion for etching and plating applications, photosensitivity is broad and low, spinnable to 6 - 20 µm.<br />
*'''SU-8 2002, 2025, 2075, 2100, 3025, 3050''': epoxy-based negative resist. Optimal for tall high-aspect ratio permanent structures. ([https://kayakuam.com/products/su-8-photoresists/ Manufacturer Spec Sheet ]). Difficult to remove. Spinnable to 1.5-200μm thickness. <br />
<br />
<br />
<br />
'''''Reminder of lamp intensities:'''''<br />
<br />
'''Suss 1 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 15 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 25 mW/cm2.<br />
'''Suss 2 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 10 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 15 mW/cm2.<br />
<br />
==Positive Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | S1813 || Dehydrate on hot plate || 3000rpm || 1.6μm || 115°C 1min || 8-10s || - || - || MF 319 45-60s || - || Suss1 Ch2 || Measured 12/19 (Link KNI recipe doc here)<br />
|-<br />
| Dehydrate on hot plate || 5000rpm || 1.1μm || 115°C 1min || 8-10s || - || - || MF 319 45-60s || - || Suss1 Ch2 || Measured 12/19<br />
|-<br />
| AZ 5214 || Dehydrate on hot plate || 3500rpm || 1.4μm || 100°C 1min || 25s || - || - || MF319 60s || - || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| AZ 9260 || Dehydrate on hot plate || 3000rpm || 8μm || 110°C 165s || 100s || - || - || MF319 12min || - || Suss2 Ch2 || Measured 10/19<br />
|}<br />
<br />
==Negative Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | AZ5214 || Dehydrate on hot plate || 2000rpm || 1.8μm || 100°C 1min || 12s || 110°C 45-60s || 40s || MF319 60s || - || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| Dehydrate on hot plate || 3500rpm || 1.4μm || 100°C 1min || 9s || 110°C 45-60s || 30s || MF319 60s || - || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| nLoF 2070 || Dehydrate on hot plate || 2500rpm || 7um || 110C 90s || 12s || 110C 90s || - || AZ 726 2min || - || Suss1 Ch1 || Measured 10/19<br />
|}<br />
<br />
==SU-8 Recipes==<br />
<br />
SU-8 is available in thicknesses ranging from 500nm to 500microns. Remember to use Laurel Spinner 1.<br />
<br />
[https://cleanroom.byu.edu/su8 BYU SU-8 Guide]<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| 2002 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| 2025 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| 2100 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || Measured 10/19<br />
|}<br />
<br />
=Other Photoresists=<br />
<br />
*[https://cleanroom.byu.edu/resistmanufacturers BYU Comprehensive list of photoresists]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes UCSB Photoresist Recipes Page 1]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Contact_Alignment_Recipes UCSB Photoresist Recipes Page 2]<br />
<br />
*[https://cleanroom.byu.edu/photoresists BYU Photoresist Recipes]<br />
<br />
==Non-KNI Photoresist Recipes==<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| SPR 220-7.0 || - || - || - || - || - || - || - || - || - || - || Measured 10/19<br />
|-<br />
|}<br />
<br />
=KNI Developers=<br />
<br />
Developers provided by KNI:<br />
<br />
*'''AZ 726 MIF''': 2.38% TMAH-based, pre-diluted (ready-to-use) and slightly further diluted only when the application requires it. Contains surfactants to improve development uniformity, so avoid stirring. MIF identifies the developer as 'Metal Ion Free' as it does not contain potassium as in KOH-based developers, it is based on TMAH, an ammonium salt, which prevents metal contamination of semiconductors. 726 is a recommended developer for almost all AZ resists [https://www.microchemicals.com/technical_information/development_photoresist.pdf MicroChemicals Development Application Note]<br />
<br />
*'''Microposit MF 319''': (Metal-Free) TMAH: 2.45%, Polyalkylene glycol <1%, pH: 13. Paired to Shipley/Microposit 1800 series resists, S1805,S1813,S1818 [https://cpb-us-e1.wpmucdn.com/sites.usc.edu/dist/a/194/files/2018/07/MF-319-Developer-1iqbk7y.pdf MSDS]<br />
<br />
*'''Microposit CD-26''': TMAH <5.0 % , pH 13, Also 1800 series targeted, no additional surfactants.<br />
<br />
*'''AZ 400K''': KOH-based. "The recommended dilutions for the AZ® 400 K or AZ® 351 B for most of the processes are developer concentrate : Water = 1: . For very thick resist films, up to a 1:3 ratio can be applied [with lower contrast], with a very fine (sub-µm) structures, a 1:5 or 1:6 ratio can support a high resolution using thin resist films." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note] Users can adjust dilution for accuracy and length of time they will tolerate.<br />
**Critical note on KOH use: "Incompatibilities between MIC and MIF Developers Even small traces of TMAH-based metal ion-free developers such as the AZ® 326 MIF, 726 MIF or 826 MIF) can significantly reduce the development rate of metal ion-containing developers (such as the AZ® 400K or 351B). If both types of developers are used, extremely clean work is to be ensured to prevent mutual contamination even in the ppm range, such as in the dispensing system or developer containers." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note]<br />
<br />
*'''Microposit 2401''': Legacy developer<br />
<br />
===Surfactants===<br />
<br />
Surfactants were developed and added in the 1980s to photoresist developers to combat photoresists' hydrophobic surfaces which cause "hot spots" of fast development. They reduce the surface tension and improve wetting (giving homogeneous development). The common drawback of their inclusion is foaming and an oily nature which makes them incompatible with some agitated processes. Surfactacts also change development speed since they coat photoresist surfaces and inhibit the dissolution reaction. As such exposure-development times must be adjusted and while contrast is improved, resolution may be lost. See here for more in depth discussion: [http://www.lithoguru.com/scientist/litho_tutor/TUTOR09%20(Winter%2095).pdf The Lithography Tutor: Photoresist Development]<br />
<br />
=Addtional Photolithography Resources=<br />
<br />
*[https://cleanroom.byu.edu/processes#Microfab_PhotoLith BYU Photolithography Guide]<br />
<br />
*[https://kayakuam.com/techreferences/lithography-terms/ Lithography Terminology]<br />
<br />
*[https://cleanroom.byu.edu/definitions Lithography Terminology 2]<br />
<br />
*[https://pages.mtu.edu/~microweb/chap1/ch1-4-1.htm Resolution Limits of Photolithography]</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Optical_Lithography_Resources&diff=2089Optical Lithography Resources2019-12-05T15:53:11Z<p>Dvin: /* Positive Photoresist Recipes */</p>
<hr />
<div>'''[https://www.microchemicals.com/downloads/application_notes.html Trove of lithography application notes from MicroChemicals covering troubleshooting, procedures, techniques, theory]'''<br />
<br />
=KNI Photoresists=<br />
<br />
Photoresists provided by KNI:<br />
<br />
*'''S1805, 1813, 1818''': field standard positive, may be used for liftoff and withstands some acid etching. Designed with lower toxicity materials. ([https://kayakuam.com/wp-content/uploads/2019/09/S1800-G2.pdf Manufacturer Spec Sheet]) Shipley 1800 series 0.5-1.9μm range available. 0.5-3.2μm available from manufacturer<br />
*'''AZ 5214''': exposable as positive and image reversal negative. Optimized for liftoff processes with negative sidewall profile. Structure is stable to 130°C after postbake. 1-2μm thickness ([https://www.microchemicals.com/micro/tds_az_nlof2000_series.pdf Manufacturer Spec Sheet])<br />
*'''AZ 9245, 9260''': Intended for thick positive structures 4-20μm. Lower optical absorption and sensitivity permits tall structures but development is slow. ([https://www.microchemicals.com/products/photoresists/az_9260.html Produce Page])<br />
*'''AZ nLof 2020, 2035, 2070''': Also optimized for liftoff processes but thicker than 5214 at 2-7μm spinnable. Structures are stable to 250°C. High chemical stability, e-beam exposable, but more difficult to remove. ([https://www.microchemicals.com/products/photoresists/az_nlof_2020.html Product Page])<br />
*'''AZ 3330-F''': medium resolution resist, high thermal stability, optimized for metal RIE etch or plating process environments. 1.0-5.0µm spinnable ([http://www.imicromaterials.com/index.php/products/ig-line-photoresists/az-3300-series Product Page])<br />
*'''AZ 4620''': improved surface adhesion for etching and plating applications, photosensitivity is broad and low, spinnable to 6 - 20 µm.<br />
*'''SU-8 2002, 2025, 2075, 2100, 3025, 3050''': epoxy-based negative resist. Optimal for tall high-aspect ratio permanent structures. ([https://kayakuam.com/products/su-8-photoresists/ Manufacturer Spec Sheet ]). Difficult to remove. Spinnable to 1.5-200μm thickness. <br />
<br />
<br />
<br />
'''''Reminder of lamp intensities:'''''<br />
<br />
'''Suss 1 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 15 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 25 mW/cm2.<br />
'''Suss 2 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 10 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 15 mW/cm2.<br />
<br />
==Positive Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| S1813 || Dehydrate on hot plate || 3000rpm || 1.6μm || 115°C 1min || 8-10s || - || - || MF 319 45-60s || - || Suss1 Ch2 || Measured 12/19 (Link KNI recipe doc here)<br />
|-<br />
| S1813 || Dehydrate on hot plate || 5000rpm || 1.1μm || 115°C 1min || 8-10s || - || - || MF 319 45-60s || - || Suss1 Ch2 || Measured 12/19 (Link KNI recipe doc here)<br />
|-<br />
| AZ 5214 || Dehydrate on hot plate || 3500rpm || 1.4μm || 100°C 1min || 25s || - || - || MF319 60s || - || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| AZ 9260 || Dehydrate on hot plate || 3000rpm || 8μm || 110°C 165s || 100s || - || - || MF319 12min || - || Suss2 Ch2 || Measured 10/19<br />
|}<br />
<br />
==Negative Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | AZ5214 || Dehydrate on hot plate || 2000rpm || 1.8μm || 100°C 1min || 12s || 110°C 45-60s || 40s || MF319 60s || - || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| Dehydrate on hot plate || 3500rpm || 1.4μm || 100°C 1min || 9s || 110°C 45-60s || 30s || MF319 60s || - || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| nLoF 2070 || Dehydrate on hot plate || 2500rpm || 7um || 110C 90s || 12s || 110C 90s || - || AZ 726 2min || - || Suss1 Ch1 || Measured 10/19<br />
|}<br />
<br />
==SU-8 Recipes==<br />
<br />
SU-8 is available in thicknesses ranging from 500nm to 500microns. Remember to use Laurel Spinner 1.<br />
<br />
[https://cleanroom.byu.edu/su8 BYU SU-8 Guide]<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| 2002 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| 2025 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| 2100 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || Measured 10/19<br />
|}<br />
<br />
=Other Photoresists=<br />
<br />
*[https://cleanroom.byu.edu/resistmanufacturers BYU Comprehensive list of photoresists]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes UCSB Photoresist Recipes Page 1]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Contact_Alignment_Recipes UCSB Photoresist Recipes Page 2]<br />
<br />
*[https://cleanroom.byu.edu/photoresists BYU Photoresist Recipes]<br />
<br />
==Non-KNI Photoresist Recipes==<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| SPR 220-7.0 || - || - || - || - || - || - || - || - || - || - || Measured 10/19<br />
|-<br />
|}<br />
<br />
=KNI Developers=<br />
<br />
Developers provided by KNI:<br />
<br />
*'''AZ 726 MIF''': 2.38% TMAH-based, pre-diluted (ready-to-use) and slightly further diluted only when the application requires it. Contains surfactants to improve development uniformity, so avoid stirring. MIF identifies the developer as 'Metal Ion Free' as it does not contain potassium as in KOH-based developers, it is based on TMAH, an ammonium salt, which prevents metal contamination of semiconductors. 726 is a recommended developer for almost all AZ resists [https://www.microchemicals.com/technical_information/development_photoresist.pdf MicroChemicals Development Application Note]<br />
<br />
*'''Microposit MF 319''': (Metal-Free) TMAH: 2.45%, Polyalkylene glycol <1%, pH: 13. Paired to Shipley/Microposit 1800 series resists, S1805,S1813,S1818 [https://cpb-us-e1.wpmucdn.com/sites.usc.edu/dist/a/194/files/2018/07/MF-319-Developer-1iqbk7y.pdf MSDS]<br />
<br />
*'''Microposit CD-26''': TMAH <5.0 % , pH 13, Also 1800 series targeted, no additional surfactants.<br />
<br />
*'''AZ 400K''': KOH-based. "The recommended dilutions for the AZ® 400 K or AZ® 351 B for most of the processes are developer concentrate : Water = 1: . For very thick resist films, up to a 1:3 ratio can be applied [with lower contrast], with a very fine (sub-µm) structures, a 1:5 or 1:6 ratio can support a high resolution using thin resist films." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note] Users can adjust dilution for accuracy and length of time they will tolerate.<br />
**Critical note on KOH use: "Incompatibilities between MIC and MIF Developers Even small traces of TMAH-based metal ion-free developers such as the AZ® 326 MIF, 726 MIF or 826 MIF) can significantly reduce the development rate of metal ion-containing developers (such as the AZ® 400K or 351B). If both types of developers are used, extremely clean work is to be ensured to prevent mutual contamination even in the ppm range, such as in the dispensing system or developer containers." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note]<br />
<br />
*'''Microposit 2401''': Legacy developer<br />
<br />
===Surfactants===<br />
<br />
Surfactants were developed and added in the 1980s to photoresist developers to combat photoresists' hydrophobic surfaces which cause "hot spots" of fast development. They reduce the surface tension and improve wetting (giving homogeneous development). The common drawback of their inclusion is foaming and an oily nature which makes them incompatible with some agitated processes. Surfactacts also change development speed since they coat photoresist surfaces and inhibit the dissolution reaction. As such exposure-development times must be adjusted and while contrast is improved, resolution may be lost. See here for more in depth discussion: [http://www.lithoguru.com/scientist/litho_tutor/TUTOR09%20(Winter%2095).pdf The Lithography Tutor: Photoresist Development]<br />
<br />
=Addtional Photolithography Resources=<br />
<br />
*[https://cleanroom.byu.edu/processes#Microfab_PhotoLith BYU Photolithography Guide]<br />
<br />
*[https://kayakuam.com/techreferences/lithography-terms/ Lithography Terminology]<br />
<br />
*[https://cleanroom.byu.edu/definitions Lithography Terminology 2]<br />
<br />
*[https://pages.mtu.edu/~microweb/chap1/ch1-4-1.htm Resolution Limits of Photolithography]</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Optical_Lithography_Resources&diff=2088Optical Lithography Resources2019-12-05T15:51:12Z<p>Dvin: /* Negative Photoresist Recipes */</p>
<hr />
<div>'''[https://www.microchemicals.com/downloads/application_notes.html Trove of lithography application notes from MicroChemicals covering troubleshooting, procedures, techniques, theory]'''<br />
<br />
=KNI Photoresists=<br />
<br />
Photoresists provided by KNI:<br />
<br />
*'''S1805, 1813, 1818''': field standard positive, may be used for liftoff and withstands some acid etching. Designed with lower toxicity materials. ([https://kayakuam.com/wp-content/uploads/2019/09/S1800-G2.pdf Manufacturer Spec Sheet]) Shipley 1800 series 0.5-1.9μm range available. 0.5-3.2μm available from manufacturer<br />
*'''AZ 5214''': exposable as positive and image reversal negative. Optimized for liftoff processes with negative sidewall profile. Structure is stable to 130°C after postbake. 1-2μm thickness ([https://www.microchemicals.com/micro/tds_az_nlof2000_series.pdf Manufacturer Spec Sheet])<br />
*'''AZ 9245, 9260''': Intended for thick positive structures 4-20μm. Lower optical absorption and sensitivity permits tall structures but development is slow. ([https://www.microchemicals.com/products/photoresists/az_9260.html Produce Page])<br />
*'''AZ nLof 2020, 2035, 2070''': Also optimized for liftoff processes but thicker than 5214 at 2-7μm spinnable. Structures are stable to 250°C. High chemical stability, e-beam exposable, but more difficult to remove. ([https://www.microchemicals.com/products/photoresists/az_nlof_2020.html Product Page])<br />
*'''AZ 3330-F''': medium resolution resist, high thermal stability, optimized for metal RIE etch or plating process environments. 1.0-5.0µm spinnable ([http://www.imicromaterials.com/index.php/products/ig-line-photoresists/az-3300-series Product Page])<br />
*'''AZ 4620''': improved surface adhesion for etching and plating applications, photosensitivity is broad and low, spinnable to 6 - 20 µm.<br />
*'''SU-8 2002, 2025, 2075, 2100, 3025, 3050''': epoxy-based negative resist. Optimal for tall high-aspect ratio permanent structures. ([https://kayakuam.com/products/su-8-photoresists/ Manufacturer Spec Sheet ]). Difficult to remove. Spinnable to 1.5-200μm thickness. <br />
<br />
<br />
<br />
'''''Reminder of lamp intensities:'''''<br />
<br />
'''Suss 1 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 15 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 25 mW/cm2.<br />
'''Suss 2 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 10 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 15 mW/cm2.<br />
<br />
==Positive Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| S1813 || Dehydrate on hot plate || 3000rpm || 1.5μm || 115°C 1min || X || - || - || X || - || Suss1 Ch1 || Measured 10/19 (Link KNI recipe doc here)<br />
|-<br />
| AZ 5214 || Dehydrate on hot plate || 3500rpm || 1.4μm || 100°C 1min || 25s || - || - || MF319 60s || - || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| AZ 9260 || Dehydrate on hot plate || 3000rpm || 8μm || 110°C 165s || 100s || - || - || MF319 12min || - || Suss2 Ch2 || Measured 10/19<br />
|}<br />
<br />
==Negative Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | AZ5214 || Dehydrate on hot plate || 2000rpm || 1.8μm || 100°C 1min || 12s || 110°C 45-60s || 40s || MF319 60s || - || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| Dehydrate on hot plate || 3500rpm || 1.4μm || 100°C 1min || 9s || 110°C 45-60s || 30s || MF319 60s || - || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| nLoF 2070 || Dehydrate on hot plate || 2500rpm || 7um || 110C 90s || 12s || 110C 90s || - || AZ 726 2min || - || Suss1 Ch1 || Measured 10/19<br />
|}<br />
<br />
==SU-8 Recipes==<br />
<br />
SU-8 is available in thicknesses ranging from 500nm to 500microns. Remember to use Laurel Spinner 1.<br />
<br />
[https://cleanroom.byu.edu/su8 BYU SU-8 Guide]<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| 2002 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| 2025 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| 2100 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || Measured 10/19<br />
|}<br />
<br />
=Other Photoresists=<br />
<br />
*[https://cleanroom.byu.edu/resistmanufacturers BYU Comprehensive list of photoresists]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes UCSB Photoresist Recipes Page 1]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Contact_Alignment_Recipes UCSB Photoresist Recipes Page 2]<br />
<br />
*[https://cleanroom.byu.edu/photoresists BYU Photoresist Recipes]<br />
<br />
==Non-KNI Photoresist Recipes==<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| SPR 220-7.0 || - || - || - || - || - || - || - || - || - || - || Measured 10/19<br />
|-<br />
|}<br />
<br />
=KNI Developers=<br />
<br />
Developers provided by KNI:<br />
<br />
*'''AZ 726 MIF''': 2.38% TMAH-based, pre-diluted (ready-to-use) and slightly further diluted only when the application requires it. Contains surfactants to improve development uniformity, so avoid stirring. MIF identifies the developer as 'Metal Ion Free' as it does not contain potassium as in KOH-based developers, it is based on TMAH, an ammonium salt, which prevents metal contamination of semiconductors. 726 is a recommended developer for almost all AZ resists [https://www.microchemicals.com/technical_information/development_photoresist.pdf MicroChemicals Development Application Note]<br />
<br />
*'''Microposit MF 319''': (Metal-Free) TMAH: 2.45%, Polyalkylene glycol <1%, pH: 13. Paired to Shipley/Microposit 1800 series resists, S1805,S1813,S1818 [https://cpb-us-e1.wpmucdn.com/sites.usc.edu/dist/a/194/files/2018/07/MF-319-Developer-1iqbk7y.pdf MSDS]<br />
<br />
*'''Microposit CD-26''': TMAH <5.0 % , pH 13, Also 1800 series targeted, no additional surfactants.<br />
<br />
*'''AZ 400K''': KOH-based. "The recommended dilutions for the AZ® 400 K or AZ® 351 B for most of the processes are developer concentrate : Water = 1: . For very thick resist films, up to a 1:3 ratio can be applied [with lower contrast], with a very fine (sub-µm) structures, a 1:5 or 1:6 ratio can support a high resolution using thin resist films." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note] Users can adjust dilution for accuracy and length of time they will tolerate.<br />
**Critical note on KOH use: "Incompatibilities between MIC and MIF Developers Even small traces of TMAH-based metal ion-free developers such as the AZ® 326 MIF, 726 MIF or 826 MIF) can significantly reduce the development rate of metal ion-containing developers (such as the AZ® 400K or 351B). If both types of developers are used, extremely clean work is to be ensured to prevent mutual contamination even in the ppm range, such as in the dispensing system or developer containers." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note]<br />
<br />
*'''Microposit 2401''': Legacy developer<br />
<br />
===Surfactants===<br />
<br />
Surfactants were developed and added in the 1980s to photoresist developers to combat photoresists' hydrophobic surfaces which cause "hot spots" of fast development. They reduce the surface tension and improve wetting (giving homogeneous development). The common drawback of their inclusion is foaming and an oily nature which makes them incompatible with some agitated processes. Surfactacts also change development speed since they coat photoresist surfaces and inhibit the dissolution reaction. As such exposure-development times must be adjusted and while contrast is improved, resolution may be lost. See here for more in depth discussion: [http://www.lithoguru.com/scientist/litho_tutor/TUTOR09%20(Winter%2095).pdf The Lithography Tutor: Photoresist Development]<br />
<br />
=Addtional Photolithography Resources=<br />
<br />
*[https://cleanroom.byu.edu/processes#Microfab_PhotoLith BYU Photolithography Guide]<br />
<br />
*[https://kayakuam.com/techreferences/lithography-terms/ Lithography Terminology]<br />
<br />
*[https://cleanroom.byu.edu/definitions Lithography Terminology 2]<br />
<br />
*[https://pages.mtu.edu/~microweb/chap1/ch1-4-1.htm Resolution Limits of Photolithography]</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Optical_Lithography_Resources&diff=2085Optical Lithography Resources2019-12-04T16:52:02Z<p>Dvin: /* SU-8 Recipes */</p>
<hr />
<div>'''[https://www.microchemicals.com/downloads/application_notes.html Trove of lithography application notes from MicroChemicals covering troubleshooting, procedures, techniques, theory]'''<br />
<br />
=KNI Photoresists=<br />
<br />
Photoresists provided by KNI:<br />
<br />
*'''S1805, 1813, 1818''': field standard positive, may be used for liftoff and withstands some acid etching. Designed with lower toxicity materials. ([https://kayakuam.com/wp-content/uploads/2019/09/S1800-G2.pdf Manufacturer Spec Sheet]) Shipley 1800 series 0.5-1.9μm range available. 0.5-3.2μm available from manufacturer<br />
*'''AZ 5214''': exposable as positive and image reversal negative. Optimized for liftoff processes with negative sidewall profile. Structure is stable to 130°C after postbake. 1-2μm thickness ([https://www.microchemicals.com/micro/tds_az_nlof2000_series.pdf Manufacturer Spec Sheet])<br />
*'''AZ 9245, 9260''': Intended for thick positive structures 4-20μm. Lower optical absorption and sensitivity permits tall structures but development is slow. ([https://www.microchemicals.com/products/photoresists/az_9260.html Produce Page])<br />
*'''AZ nLof 2020, 2035, 2070''': Also optimized for liftoff processes but thicker than 5214 at 2-7μm spinnable. Structures are stable to 250°C. High chemical stability, e-beam exposable, but more difficult to remove. ([https://www.microchemicals.com/products/photoresists/az_nlof_2020.html Product Page])<br />
*'''AZ 3330-F''': medium resolution resist, high thermal stability, optimized for metal RIE etch or plating process environments. 1.0-5.0µm spinnable ([http://www.imicromaterials.com/index.php/products/ig-line-photoresists/az-3300-series Product Page])<br />
*'''AZ 4620''': improved surface adhesion for etching and plating applications, photosensitivity is broad and low, spinnable to 6 - 20 µm.<br />
*'''SU-8 2002, 2025, 2075, 2100, 3025, 3050''': epoxy-based negative resist. Optimal for tall high-aspect ratio permanent structures. ([https://kayakuam.com/products/su-8-photoresists/ Manufacturer Spec Sheet ]). Difficult to remove. Spinnable to 1.5-200μm thickness. <br />
<br />
<br />
<br />
'''''Reminder of lamp intensities:'''''<br />
<br />
'''Suss 1 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 15 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 25 mW/cm2.<br />
'''Suss 2 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 10 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 15 mW/cm2.<br />
<br />
==Positive Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| S1813 || Dehydrate on hot plate || 3000rpm || 1.5μm || 115°C 1min || X || - || - || X || - || Suss1 Ch1 || Measured 10/19 (Link KNI recipe doc here)<br />
|-<br />
| AZ 5214 || Dehydrate on hot plate || 3500rpm || 1.4μm || 100°C 1min || 25s || - || - || MF319 60s || - || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| AZ 9260 || Dehydrate on hot plate || 3000rpm || 8μm || 110°C 165s || 100s || - || - || MF319 12min || - || Suss2 Ch2 || Measured 10/19<br />
|}<br />
<br />
==Negative Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | AZ5214 || Dehydrate on hot plate || 2000rpm || 1.8μm || 100C 1min || 12s || 110C 1min || 40s || MF319 60s || - || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| Dehydrate on hot plate || 3500rpm || 1.4μm || 100C 1min || 9s || 110C 1min || 30s || MF319 60s || - || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| nLoF 2070 || Dehydrate on hot plate || 2500rpm || 7um || 110C 90s || 12s || 110C 90s || - || AZ 726 2min || - || Suss1 Ch1 || Measured 10/19<br />
|}<br />
<br />
==SU-8 Recipes==<br />
<br />
SU-8 is available in thicknesses ranging from 500nm to 500microns. Remember to use Laurel Spinner 1.<br />
<br />
[https://cleanroom.byu.edu/su8 BYU SU-8 Guide]<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| 2002 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| 2025 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| 2100 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || Measured 10/19<br />
|}<br />
<br />
=Other Photoresists=<br />
<br />
*[https://cleanroom.byu.edu/resistmanufacturers BYU Comprehensive list of photoresists]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes UCSB Photoresist Recipes Page 1]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Contact_Alignment_Recipes UCSB Photoresist Recipes Page 2]<br />
<br />
*[https://cleanroom.byu.edu/photoresists BYU Photoresist Recipes]<br />
<br />
==Non-KNI Photoresist Recipes==<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| SPR 220-7.0 || - || - || - || - || - || - || - || - || - || - || Measured 10/19<br />
|-<br />
|}<br />
<br />
=KNI Developers=<br />
<br />
Developers provided by KNI:<br />
<br />
*'''AZ 726 MIF''': 2.38% TMAH-based, pre-diluted (ready-to-use) and slightly further diluted only when the application requires it. Contains surfactants to improve development uniformity, so avoid stirring. MIF identifies the developer as 'Metal Ion Free' as it does not contain potassium as in KOH-based developers, it is based on TMAH, an ammonium salt, which prevents metal contamination of semiconductors. 726 is a recommended developer for almost all AZ resists [https://www.microchemicals.com/technical_information/development_photoresist.pdf MicroChemicals Development Application Note]<br />
<br />
*'''Microposit MF 319''': (Metal-Free) TMAH: 2.45%, Polyalkylene glycol <1%, pH: 13. Paired to Shipley/Microposit 1800 series resists, S1805,S1813,S1818 [https://cpb-us-e1.wpmucdn.com/sites.usc.edu/dist/a/194/files/2018/07/MF-319-Developer-1iqbk7y.pdf MSDS]<br />
<br />
*'''Microposit CD-26''': TMAH <5.0 % , pH 13, Also 1800 series targeted, no additional surfactants.<br />
<br />
*'''AZ 400K''': KOH-based. "The recommended dilutions for the AZ® 400 K or AZ® 351 B for most of the processes are developer concentrate : Water = 1: . For very thick resist films, up to a 1:3 ratio can be applied [with lower contrast], with a very fine (sub-µm) structures, a 1:5 or 1:6 ratio can support a high resolution using thin resist films." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note] Users can adjust dilution for accuracy and length of time they will tolerate.<br />
**Critical note on KOH use: "Incompatibilities between MIC and MIF Developers Even small traces of TMAH-based metal ion-free developers such as the AZ® 326 MIF, 726 MIF or 826 MIF) can significantly reduce the development rate of metal ion-containing developers (such as the AZ® 400K or 351B). If both types of developers are used, extremely clean work is to be ensured to prevent mutual contamination even in the ppm range, such as in the dispensing system or developer containers." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note]<br />
<br />
*'''Microposit 2401''': Legacy developer<br />
<br />
===Surfactants===<br />
<br />
Surfactants were developed and added in the 1980s to photoresist developers to combat photoresists' hydrophobic surfaces which cause "hot spots" of fast development. They reduce the surface tension and improve wetting (giving homogeneous development). The common drawback of their inclusion is foaming and an oily nature which makes them incompatible with some agitated processes. Surfactacts also change development speed since they coat photoresist surfaces and inhibit the dissolution reaction. As such exposure-development times must be adjusted and while contrast is improved, resolution may be lost. See here for more in depth discussion: [http://www.lithoguru.com/scientist/litho_tutor/TUTOR09%20(Winter%2095).pdf The Lithography Tutor: Photoresist Development]<br />
<br />
=Addtional Photolithography Resources=<br />
<br />
*[https://cleanroom.byu.edu/processes#Microfab_PhotoLith BYU Photolithography Guide]<br />
<br />
*[https://kayakuam.com/techreferences/lithography-terms/ Lithography Terminology]<br />
<br />
*[https://cleanroom.byu.edu/definitions Lithography Terminology 2]<br />
<br />
*[https://pages.mtu.edu/~microweb/chap1/ch1-4-1.htm Resolution Limits of Photolithography]</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Optical_Lithography_Resources&diff=2084Optical Lithography Resources2019-12-04T16:49:46Z<p>Dvin: /* Positive Photoresist Recipes */</p>
<hr />
<div>'''[https://www.microchemicals.com/downloads/application_notes.html Trove of lithography application notes from MicroChemicals covering troubleshooting, procedures, techniques, theory]'''<br />
<br />
=KNI Photoresists=<br />
<br />
Photoresists provided by KNI:<br />
<br />
*'''S1805, 1813, 1818''': field standard positive, may be used for liftoff and withstands some acid etching. Designed with lower toxicity materials. ([https://kayakuam.com/wp-content/uploads/2019/09/S1800-G2.pdf Manufacturer Spec Sheet]) Shipley 1800 series 0.5-1.9μm range available. 0.5-3.2μm available from manufacturer<br />
*'''AZ 5214''': exposable as positive and image reversal negative. Optimized for liftoff processes with negative sidewall profile. Structure is stable to 130°C after postbake. 1-2μm thickness ([https://www.microchemicals.com/micro/tds_az_nlof2000_series.pdf Manufacturer Spec Sheet])<br />
*'''AZ 9245, 9260''': Intended for thick positive structures 4-20μm. Lower optical absorption and sensitivity permits tall structures but development is slow. ([https://www.microchemicals.com/products/photoresists/az_9260.html Produce Page])<br />
*'''AZ nLof 2020, 2035, 2070''': Also optimized for liftoff processes but thicker than 5214 at 2-7μm spinnable. Structures are stable to 250°C. High chemical stability, e-beam exposable, but more difficult to remove. ([https://www.microchemicals.com/products/photoresists/az_nlof_2020.html Product Page])<br />
*'''AZ 3330-F''': medium resolution resist, high thermal stability, optimized for metal RIE etch or plating process environments. 1.0-5.0µm spinnable ([http://www.imicromaterials.com/index.php/products/ig-line-photoresists/az-3300-series Product Page])<br />
*'''AZ 4620''': improved surface adhesion for etching and plating applications, photosensitivity is broad and low, spinnable to 6 - 20 µm.<br />
*'''SU-8 2002, 2025, 2075, 2100, 3025, 3050''': epoxy-based negative resist. Optimal for tall high-aspect ratio permanent structures. ([https://kayakuam.com/products/su-8-photoresists/ Manufacturer Spec Sheet ]). Difficult to remove. Spinnable to 1.5-200μm thickness. <br />
<br />
<br />
<br />
'''''Reminder of lamp intensities:'''''<br />
<br />
'''Suss 1 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 15 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 25 mW/cm2.<br />
'''Suss 2 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 10 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 15 mW/cm2.<br />
<br />
==Positive Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| S1813 || Dehydrate on hot plate || 3000rpm || 1.5μm || 115°C 1min || X || - || - || X || - || Suss1 Ch1 || Measured 10/19 (Link KNI recipe doc here)<br />
|-<br />
| AZ 5214 || Dehydrate on hot plate || 3500rpm || 1.4μm || 100°C 1min || 25s || - || - || MF319 60s || - || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| AZ 9260 || Dehydrate on hot plate || 3000rpm || 8μm || 110°C 165s || 100s || - || - || MF319 12min || - || Suss2 Ch2 || Measured 10/19<br />
|}<br />
<br />
==Negative Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | AZ5214 || Dehydrate on hot plate || 2000rpm || 1.8μm || 100C 1min || 12s || 110C 1min || 40s || MF319 60s || - || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| Dehydrate on hot plate || 3500rpm || 1.4μm || 100C 1min || 9s || 110C 1min || 30s || MF319 60s || - || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| nLoF 2070 || Dehydrate on hot plate || 2500rpm || 7um || 110C 90s || 12s || 110C 90s || - || AZ 726 2min || - || Suss1 Ch1 || Measured 10/19<br />
|}<br />
<br />
==SU-8 Recipes==<br />
<br />
SU-8 is available in thicknesses ranging from 500nm to 500microns. Remember to use Laurel Spinner 1.<br />
<br />
[https://cleanroom.byu.edu/su8 BYU SU-8 Guide]<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| 2050 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || Measured 10/19<br />
|}<br />
<br />
=Other Photoresists=<br />
<br />
*[https://cleanroom.byu.edu/resistmanufacturers BYU Comprehensive list of photoresists]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes UCSB Photoresist Recipes Page 1]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Contact_Alignment_Recipes UCSB Photoresist Recipes Page 2]<br />
<br />
*[https://cleanroom.byu.edu/photoresists BYU Photoresist Recipes]<br />
<br />
==Non-KNI Photoresist Recipes==<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| SPR 220-7.0 || - || - || - || - || - || - || - || - || - || - || Measured 10/19<br />
|-<br />
|}<br />
<br />
=KNI Developers=<br />
<br />
Developers provided by KNI:<br />
<br />
*'''AZ 726 MIF''': 2.38% TMAH-based, pre-diluted (ready-to-use) and slightly further diluted only when the application requires it. Contains surfactants to improve development uniformity, so avoid stirring. MIF identifies the developer as 'Metal Ion Free' as it does not contain potassium as in KOH-based developers, it is based on TMAH, an ammonium salt, which prevents metal contamination of semiconductors. 726 is a recommended developer for almost all AZ resists [https://www.microchemicals.com/technical_information/development_photoresist.pdf MicroChemicals Development Application Note]<br />
<br />
*'''Microposit MF 319''': (Metal-Free) TMAH: 2.45%, Polyalkylene glycol <1%, pH: 13. Paired to Shipley/Microposit 1800 series resists, S1805,S1813,S1818 [https://cpb-us-e1.wpmucdn.com/sites.usc.edu/dist/a/194/files/2018/07/MF-319-Developer-1iqbk7y.pdf MSDS]<br />
<br />
*'''Microposit CD-26''': TMAH <5.0 % , pH 13, Also 1800 series targeted, no additional surfactants.<br />
<br />
*'''AZ 400K''': KOH-based. "The recommended dilutions for the AZ® 400 K or AZ® 351 B for most of the processes are developer concentrate : Water = 1: . For very thick resist films, up to a 1:3 ratio can be applied [with lower contrast], with a very fine (sub-µm) structures, a 1:5 or 1:6 ratio can support a high resolution using thin resist films." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note] Users can adjust dilution for accuracy and length of time they will tolerate.<br />
**Critical note on KOH use: "Incompatibilities between MIC and MIF Developers Even small traces of TMAH-based metal ion-free developers such as the AZ® 326 MIF, 726 MIF or 826 MIF) can significantly reduce the development rate of metal ion-containing developers (such as the AZ® 400K or 351B). If both types of developers are used, extremely clean work is to be ensured to prevent mutual contamination even in the ppm range, such as in the dispensing system or developer containers." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note]<br />
<br />
*'''Microposit 2401''': Legacy developer<br />
<br />
===Surfactants===<br />
<br />
Surfactants were developed and added in the 1980s to photoresist developers to combat photoresists' hydrophobic surfaces which cause "hot spots" of fast development. They reduce the surface tension and improve wetting (giving homogeneous development). The common drawback of their inclusion is foaming and an oily nature which makes them incompatible with some agitated processes. Surfactacts also change development speed since they coat photoresist surfaces and inhibit the dissolution reaction. As such exposure-development times must be adjusted and while contrast is improved, resolution may be lost. See here for more in depth discussion: [http://www.lithoguru.com/scientist/litho_tutor/TUTOR09%20(Winter%2095).pdf The Lithography Tutor: Photoresist Development]<br />
<br />
=Addtional Photolithography Resources=<br />
<br />
*[https://cleanroom.byu.edu/processes#Microfab_PhotoLith BYU Photolithography Guide]<br />
<br />
*[https://kayakuam.com/techreferences/lithography-terms/ Lithography Terminology]<br />
<br />
*[https://cleanroom.byu.edu/definitions Lithography Terminology 2]<br />
<br />
*[https://pages.mtu.edu/~microweb/chap1/ch1-4-1.htm Resolution Limits of Photolithography]</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Optical_Lithography_Resources&diff=2083Optical Lithography Resources2019-12-04T16:35:54Z<p>Dvin: /* SU-8 Recipes */</p>
<hr />
<div>'''[https://www.microchemicals.com/downloads/application_notes.html Trove of lithography application notes from MicroChemicals covering troubleshooting, procedures, techniques, theory]'''<br />
<br />
=KNI Photoresists=<br />
<br />
Photoresists provided by KNI:<br />
<br />
*'''S1805, 1813, 1818''': field standard positive, may be used for liftoff and withstands some acid etching. Designed with lower toxicity materials. ([https://kayakuam.com/wp-content/uploads/2019/09/S1800-G2.pdf Manufacturer Spec Sheet]) Shipley 1800 series 0.5-1.9μm range available. 0.5-3.2μm available from manufacturer<br />
*'''AZ 5214''': exposable as positive and image reversal negative. Optimized for liftoff processes with negative sidewall profile. Structure is stable to 130°C after postbake. 1-2μm thickness ([https://www.microchemicals.com/micro/tds_az_nlof2000_series.pdf Manufacturer Spec Sheet])<br />
*'''AZ 9245, 9260''': Intended for thick positive structures 4-20μm. Lower optical absorption and sensitivity permits tall structures but development is slow. ([https://www.microchemicals.com/products/photoresists/az_9260.html Produce Page])<br />
*'''AZ nLof 2020, 2035, 2070''': Also optimized for liftoff processes but thicker than 5214 at 2-7μm spinnable. Structures are stable to 250°C. High chemical stability, e-beam exposable, but more difficult to remove. ([https://www.microchemicals.com/products/photoresists/az_nlof_2020.html Product Page])<br />
*'''AZ 3330-F''': medium resolution resist, high thermal stability, optimized for metal RIE etch or plating process environments. 1.0-5.0µm spinnable ([http://www.imicromaterials.com/index.php/products/ig-line-photoresists/az-3300-series Product Page])<br />
*'''AZ 4620''': improved surface adhesion for etching and plating applications, photosensitivity is broad and low, spinnable to 6 - 20 µm.<br />
*'''SU-8 2002, 2025, 2075, 2100, 3025, 3050''': epoxy-based negative resist. Optimal for tall high-aspect ratio permanent structures. ([https://kayakuam.com/products/su-8-photoresists/ Manufacturer Spec Sheet ]). Difficult to remove. Spinnable to 1.5-200μm thickness. <br />
<br />
<br />
<br />
'''''Reminder of lamp intensities:'''''<br />
<br />
'''Suss 1 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 15 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 25 mW/cm2.<br />
'''Suss 2 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 10 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 15 mW/cm2.<br />
<br />
==Positive Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| S1813 || Dehydrate on hot plate || 3000rpm || 1.5μm || 115C 1min || X || - || - || X || - || Suss1 Ch1 || Measured 10/19 (Link KNI recipe doc here)<br />
|-<br />
| AZ5214 || Dehydrate on hot plate || 3500rpm || 1.4μm || 100C 1min || 25s || - || - || MF319 60s || - || Suss1 Ch1 || Measured 10/19<br />
|}<br />
<br />
==Negative Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | AZ5214 || Dehydrate on hot plate || 2000rpm || 1.8μm || 100C 1min || 12s || 110C 1min || 40s || MF319 60s || - || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| Dehydrate on hot plate || 3500rpm || 1.4μm || 100C 1min || 9s || 110C 1min || 30s || MF319 60s || - || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| nLoF 2070 || Dehydrate on hot plate || 2500rpm || 7um || 110C 90s || 12s || 110C 90s || - || AZ 726 2min || - || Suss1 Ch1 || Measured 10/19<br />
|}<br />
<br />
==SU-8 Recipes==<br />
<br />
SU-8 is available in thicknesses ranging from 500nm to 500microns. Remember to use Laurel Spinner 1.<br />
<br />
[https://cleanroom.byu.edu/su8 BYU SU-8 Guide]<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| 2050 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 || Measured 10/19<br />
|}<br />
<br />
=Other Photoresists=<br />
<br />
*[https://cleanroom.byu.edu/resistmanufacturers BYU Comprehensive list of photoresists]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes UCSB Photoresist Recipes Page 1]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Contact_Alignment_Recipes UCSB Photoresist Recipes Page 2]<br />
<br />
*[https://cleanroom.byu.edu/photoresists BYU Photoresist Recipes]<br />
<br />
==Non-KNI Photoresist Recipes==<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| SPR 220-7.0 || - || - || - || - || - || - || - || - || - || - || Measured 10/19<br />
|-<br />
|}<br />
<br />
=KNI Developers=<br />
<br />
Developers provided by KNI:<br />
<br />
*'''AZ 726 MIF''': 2.38% TMAH-based, pre-diluted (ready-to-use) and slightly further diluted only when the application requires it. Contains surfactants to improve development uniformity, so avoid stirring. MIF identifies the developer as 'Metal Ion Free' as it does not contain potassium as in KOH-based developers, it is based on TMAH, an ammonium salt, which prevents metal contamination of semiconductors. 726 is a recommended developer for almost all AZ resists [https://www.microchemicals.com/technical_information/development_photoresist.pdf MicroChemicals Development Application Note]<br />
<br />
*'''Microposit MF 319''': (Metal-Free) TMAH: 2.45%, Polyalkylene glycol <1%, pH: 13. Paired to Shipley/Microposit 1800 series resists, S1805,S1813,S1818 [https://cpb-us-e1.wpmucdn.com/sites.usc.edu/dist/a/194/files/2018/07/MF-319-Developer-1iqbk7y.pdf MSDS]<br />
<br />
*'''Microposit CD-26''': TMAH <5.0 % , pH 13, Also 1800 series targeted, no additional surfactants.<br />
<br />
*'''AZ 400K''': KOH-based. "The recommended dilutions for the AZ® 400 K or AZ® 351 B for most of the processes are developer concentrate : Water = 1: . For very thick resist films, up to a 1:3 ratio can be applied [with lower contrast], with a very fine (sub-µm) structures, a 1:5 or 1:6 ratio can support a high resolution using thin resist films." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note] Users can adjust dilution for accuracy and length of time they will tolerate.<br />
**Critical note on KOH use: "Incompatibilities between MIC and MIF Developers Even small traces of TMAH-based metal ion-free developers such as the AZ® 326 MIF, 726 MIF or 826 MIF) can significantly reduce the development rate of metal ion-containing developers (such as the AZ® 400K or 351B). If both types of developers are used, extremely clean work is to be ensured to prevent mutual contamination even in the ppm range, such as in the dispensing system or developer containers." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note]<br />
<br />
*'''Microposit 2401''': Legacy developer<br />
<br />
===Surfactants===<br />
<br />
Surfactants were developed and added in the 1980s to photoresist developers to combat photoresists' hydrophobic surfaces which cause "hot spots" of fast development. They reduce the surface tension and improve wetting (giving homogeneous development). The common drawback of their inclusion is foaming and an oily nature which makes them incompatible with some agitated processes. Surfactacts also change development speed since they coat photoresist surfaces and inhibit the dissolution reaction. As such exposure-development times must be adjusted and while contrast is improved, resolution may be lost. See here for more in depth discussion: [http://www.lithoguru.com/scientist/litho_tutor/TUTOR09%20(Winter%2095).pdf The Lithography Tutor: Photoresist Development]<br />
<br />
=Addtional Photolithography Resources=<br />
<br />
*[https://cleanroom.byu.edu/processes#Microfab_PhotoLith BYU Photolithography Guide]<br />
<br />
*[https://kayakuam.com/techreferences/lithography-terms/ Lithography Terminology]<br />
<br />
*[https://cleanroom.byu.edu/definitions Lithography Terminology 2]<br />
<br />
*[https://pages.mtu.edu/~microweb/chap1/ch1-4-1.htm Resolution Limits of Photolithography]</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Optical_Lithography_Resources&diff=2082Optical Lithography Resources2019-12-04T16:35:44Z<p>Dvin: /* Positive Photoresist Recipes */</p>
<hr />
<div>'''[https://www.microchemicals.com/downloads/application_notes.html Trove of lithography application notes from MicroChemicals covering troubleshooting, procedures, techniques, theory]'''<br />
<br />
=KNI Photoresists=<br />
<br />
Photoresists provided by KNI:<br />
<br />
*'''S1805, 1813, 1818''': field standard positive, may be used for liftoff and withstands some acid etching. Designed with lower toxicity materials. ([https://kayakuam.com/wp-content/uploads/2019/09/S1800-G2.pdf Manufacturer Spec Sheet]) Shipley 1800 series 0.5-1.9μm range available. 0.5-3.2μm available from manufacturer<br />
*'''AZ 5214''': exposable as positive and image reversal negative. Optimized for liftoff processes with negative sidewall profile. Structure is stable to 130°C after postbake. 1-2μm thickness ([https://www.microchemicals.com/micro/tds_az_nlof2000_series.pdf Manufacturer Spec Sheet])<br />
*'''AZ 9245, 9260''': Intended for thick positive structures 4-20μm. Lower optical absorption and sensitivity permits tall structures but development is slow. ([https://www.microchemicals.com/products/photoresists/az_9260.html Produce Page])<br />
*'''AZ nLof 2020, 2035, 2070''': Also optimized for liftoff processes but thicker than 5214 at 2-7μm spinnable. Structures are stable to 250°C. High chemical stability, e-beam exposable, but more difficult to remove. ([https://www.microchemicals.com/products/photoresists/az_nlof_2020.html Product Page])<br />
*'''AZ 3330-F''': medium resolution resist, high thermal stability, optimized for metal RIE etch or plating process environments. 1.0-5.0µm spinnable ([http://www.imicromaterials.com/index.php/products/ig-line-photoresists/az-3300-series Product Page])<br />
*'''AZ 4620''': improved surface adhesion for etching and plating applications, photosensitivity is broad and low, spinnable to 6 - 20 µm.<br />
*'''SU-8 2002, 2025, 2075, 2100, 3025, 3050''': epoxy-based negative resist. Optimal for tall high-aspect ratio permanent structures. ([https://kayakuam.com/products/su-8-photoresists/ Manufacturer Spec Sheet ]). Difficult to remove. Spinnable to 1.5-200μm thickness. <br />
<br />
<br />
<br />
'''''Reminder of lamp intensities:'''''<br />
<br />
'''Suss 1 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 15 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 25 mW/cm2.<br />
'''Suss 2 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 10 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 15 mW/cm2.<br />
<br />
==Positive Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| S1813 || Dehydrate on hot plate || 3000rpm || 1.5μm || 115C 1min || X || - || - || X || - || Suss1 Ch1 || Measured 10/19 (Link KNI recipe doc here)<br />
|-<br />
| AZ5214 || Dehydrate on hot plate || 3500rpm || 1.4μm || 100C 1min || 25s || - || - || MF319 60s || - || Suss1 Ch1 || Measured 10/19<br />
|}<br />
<br />
==Negative Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | AZ5214 || Dehydrate on hot plate || 2000rpm || 1.8μm || 100C 1min || 12s || 110C 1min || 40s || MF319 60s || - || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| Dehydrate on hot plate || 3500rpm || 1.4μm || 100C 1min || 9s || 110C 1min || 30s || MF319 60s || - || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| nLoF 2070 || Dehydrate on hot plate || 2500rpm || 7um || 110C 90s || 12s || 110C 90s || - || AZ 726 2min || - || Suss1 Ch1 || Measured 10/19<br />
|}<br />
<br />
==SU-8 Recipes==<br />
<br />
SU-8 is available in thicknesses ranging from 500nm to 500microns. Remember to use Laurel Spinner 1.<br />
<br />
[https://cleanroom.byu.edu/su8 BYU SU-8 Guide]<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| 2050 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
=Other Photoresists=<br />
<br />
*[https://cleanroom.byu.edu/resistmanufacturers BYU Comprehensive list of photoresists]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes UCSB Photoresist Recipes Page 1]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Contact_Alignment_Recipes UCSB Photoresist Recipes Page 2]<br />
<br />
*[https://cleanroom.byu.edu/photoresists BYU Photoresist Recipes]<br />
<br />
==Non-KNI Photoresist Recipes==<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| SPR 220-7.0 || - || - || - || - || - || - || - || - || - || - || Measured 10/19<br />
|-<br />
|}<br />
<br />
=KNI Developers=<br />
<br />
Developers provided by KNI:<br />
<br />
*'''AZ 726 MIF''': 2.38% TMAH-based, pre-diluted (ready-to-use) and slightly further diluted only when the application requires it. Contains surfactants to improve development uniformity, so avoid stirring. MIF identifies the developer as 'Metal Ion Free' as it does not contain potassium as in KOH-based developers, it is based on TMAH, an ammonium salt, which prevents metal contamination of semiconductors. 726 is a recommended developer for almost all AZ resists [https://www.microchemicals.com/technical_information/development_photoresist.pdf MicroChemicals Development Application Note]<br />
<br />
*'''Microposit MF 319''': (Metal-Free) TMAH: 2.45%, Polyalkylene glycol <1%, pH: 13. Paired to Shipley/Microposit 1800 series resists, S1805,S1813,S1818 [https://cpb-us-e1.wpmucdn.com/sites.usc.edu/dist/a/194/files/2018/07/MF-319-Developer-1iqbk7y.pdf MSDS]<br />
<br />
*'''Microposit CD-26''': TMAH <5.0 % , pH 13, Also 1800 series targeted, no additional surfactants.<br />
<br />
*'''AZ 400K''': KOH-based. "The recommended dilutions for the AZ® 400 K or AZ® 351 B for most of the processes are developer concentrate : Water = 1: . For very thick resist films, up to a 1:3 ratio can be applied [with lower contrast], with a very fine (sub-µm) structures, a 1:5 or 1:6 ratio can support a high resolution using thin resist films." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note] Users can adjust dilution for accuracy and length of time they will tolerate.<br />
**Critical note on KOH use: "Incompatibilities between MIC and MIF Developers Even small traces of TMAH-based metal ion-free developers such as the AZ® 326 MIF, 726 MIF or 826 MIF) can significantly reduce the development rate of metal ion-containing developers (such as the AZ® 400K or 351B). If both types of developers are used, extremely clean work is to be ensured to prevent mutual contamination even in the ppm range, such as in the dispensing system or developer containers." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note]<br />
<br />
*'''Microposit 2401''': Legacy developer<br />
<br />
===Surfactants===<br />
<br />
Surfactants were developed and added in the 1980s to photoresist developers to combat photoresists' hydrophobic surfaces which cause "hot spots" of fast development. They reduce the surface tension and improve wetting (giving homogeneous development). The common drawback of their inclusion is foaming and an oily nature which makes them incompatible with some agitated processes. Surfactacts also change development speed since they coat photoresist surfaces and inhibit the dissolution reaction. As such exposure-development times must be adjusted and while contrast is improved, resolution may be lost. See here for more in depth discussion: [http://www.lithoguru.com/scientist/litho_tutor/TUTOR09%20(Winter%2095).pdf The Lithography Tutor: Photoresist Development]<br />
<br />
=Addtional Photolithography Resources=<br />
<br />
*[https://cleanroom.byu.edu/processes#Microfab_PhotoLith BYU Photolithography Guide]<br />
<br />
*[https://kayakuam.com/techreferences/lithography-terms/ Lithography Terminology]<br />
<br />
*[https://cleanroom.byu.edu/definitions Lithography Terminology 2]<br />
<br />
*[https://pages.mtu.edu/~microweb/chap1/ch1-4-1.htm Resolution Limits of Photolithography]</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Optical_Lithography_Resources&diff=2081Optical Lithography Resources2019-12-04T16:35:14Z<p>Dvin: /* SU-8 Recipes */</p>
<hr />
<div>'''[https://www.microchemicals.com/downloads/application_notes.html Trove of lithography application notes from MicroChemicals covering troubleshooting, procedures, techniques, theory]'''<br />
<br />
=KNI Photoresists=<br />
<br />
Photoresists provided by KNI:<br />
<br />
*'''S1805, 1813, 1818''': field standard positive, may be used for liftoff and withstands some acid etching. Designed with lower toxicity materials. ([https://kayakuam.com/wp-content/uploads/2019/09/S1800-G2.pdf Manufacturer Spec Sheet]) Shipley 1800 series 0.5-1.9μm range available. 0.5-3.2μm available from manufacturer<br />
*'''AZ 5214''': exposable as positive and image reversal negative. Optimized for liftoff processes with negative sidewall profile. Structure is stable to 130°C after postbake. 1-2μm thickness ([https://www.microchemicals.com/micro/tds_az_nlof2000_series.pdf Manufacturer Spec Sheet])<br />
*'''AZ 9245, 9260''': Intended for thick positive structures 4-20μm. Lower optical absorption and sensitivity permits tall structures but development is slow. ([https://www.microchemicals.com/products/photoresists/az_9260.html Produce Page])<br />
*'''AZ nLof 2020, 2035, 2070''': Also optimized for liftoff processes but thicker than 5214 at 2-7μm spinnable. Structures are stable to 250°C. High chemical stability, e-beam exposable, but more difficult to remove. ([https://www.microchemicals.com/products/photoresists/az_nlof_2020.html Product Page])<br />
*'''AZ 3330-F''': medium resolution resist, high thermal stability, optimized for metal RIE etch or plating process environments. 1.0-5.0µm spinnable ([http://www.imicromaterials.com/index.php/products/ig-line-photoresists/az-3300-series Product Page])<br />
*'''AZ 4620''': improved surface adhesion for etching and plating applications, photosensitivity is broad and low, spinnable to 6 - 20 µm.<br />
*'''SU-8 2002, 2025, 2075, 2100, 3025, 3050''': epoxy-based negative resist. Optimal for tall high-aspect ratio permanent structures. ([https://kayakuam.com/products/su-8-photoresists/ Manufacturer Spec Sheet ]). Difficult to remove. Spinnable to 1.5-200μm thickness. <br />
<br />
<br />
<br />
'''''Reminder of lamp intensities:'''''<br />
<br />
'''Suss 1 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 15 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 25 mW/cm2.<br />
'''Suss 2 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 10 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 15 mW/cm2.<br />
<br />
==Positive Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| S1813 || Dehydrate on hot plate || 3000rpm || 1.5μm || 115C 1min || X || - || - || X || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19 (Link KNI recipe doc here)<br />
|-<br />
| AZ5214 || Dehydrate on hot plate || 3500rpm || 1.4μm || 100C 1min || 25s || - || - || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
==Negative Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | AZ5214 || Dehydrate on hot plate || 2000rpm || 1.8μm || 100C 1min || 12s || 110C 1min || 40s || MF319 60s || - || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| Dehydrate on hot plate || 3500rpm || 1.4μm || 100C 1min || 9s || 110C 1min || 30s || MF319 60s || - || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| nLoF 2070 || Dehydrate on hot plate || 2500rpm || 7um || 110C 90s || 12s || 110C 90s || - || AZ 726 2min || - || Suss1 Ch1 || Measured 10/19<br />
|}<br />
<br />
==SU-8 Recipes==<br />
<br />
SU-8 is available in thicknesses ranging from 500nm to 500microns. Remember to use Laurel Spinner 1.<br />
<br />
[https://cleanroom.byu.edu/su8 BYU SU-8 Guide]<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| 2050 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
=Other Photoresists=<br />
<br />
*[https://cleanroom.byu.edu/resistmanufacturers BYU Comprehensive list of photoresists]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes UCSB Photoresist Recipes Page 1]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Contact_Alignment_Recipes UCSB Photoresist Recipes Page 2]<br />
<br />
*[https://cleanroom.byu.edu/photoresists BYU Photoresist Recipes]<br />
<br />
==Non-KNI Photoresist Recipes==<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| SPR 220-7.0 || - || - || - || - || - || - || - || - || - || - || Measured 10/19<br />
|-<br />
|}<br />
<br />
=KNI Developers=<br />
<br />
Developers provided by KNI:<br />
<br />
*'''AZ 726 MIF''': 2.38% TMAH-based, pre-diluted (ready-to-use) and slightly further diluted only when the application requires it. Contains surfactants to improve development uniformity, so avoid stirring. MIF identifies the developer as 'Metal Ion Free' as it does not contain potassium as in KOH-based developers, it is based on TMAH, an ammonium salt, which prevents metal contamination of semiconductors. 726 is a recommended developer for almost all AZ resists [https://www.microchemicals.com/technical_information/development_photoresist.pdf MicroChemicals Development Application Note]<br />
<br />
*'''Microposit MF 319''': (Metal-Free) TMAH: 2.45%, Polyalkylene glycol <1%, pH: 13. Paired to Shipley/Microposit 1800 series resists, S1805,S1813,S1818 [https://cpb-us-e1.wpmucdn.com/sites.usc.edu/dist/a/194/files/2018/07/MF-319-Developer-1iqbk7y.pdf MSDS]<br />
<br />
*'''Microposit CD-26''': TMAH <5.0 % , pH 13, Also 1800 series targeted, no additional surfactants.<br />
<br />
*'''AZ 400K''': KOH-based. "The recommended dilutions for the AZ® 400 K or AZ® 351 B for most of the processes are developer concentrate : Water = 1: . For very thick resist films, up to a 1:3 ratio can be applied [with lower contrast], with a very fine (sub-µm) structures, a 1:5 or 1:6 ratio can support a high resolution using thin resist films." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note] Users can adjust dilution for accuracy and length of time they will tolerate.<br />
**Critical note on KOH use: "Incompatibilities between MIC and MIF Developers Even small traces of TMAH-based metal ion-free developers such as the AZ® 326 MIF, 726 MIF or 826 MIF) can significantly reduce the development rate of metal ion-containing developers (such as the AZ® 400K or 351B). If both types of developers are used, extremely clean work is to be ensured to prevent mutual contamination even in the ppm range, such as in the dispensing system or developer containers." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note]<br />
<br />
*'''Microposit 2401''': Legacy developer<br />
<br />
===Surfactants===<br />
<br />
Surfactants were developed and added in the 1980s to photoresist developers to combat photoresists' hydrophobic surfaces which cause "hot spots" of fast development. They reduce the surface tension and improve wetting (giving homogeneous development). The common drawback of their inclusion is foaming and an oily nature which makes them incompatible with some agitated processes. Surfactacts also change development speed since they coat photoresist surfaces and inhibit the dissolution reaction. As such exposure-development times must be adjusted and while contrast is improved, resolution may be lost. See here for more in depth discussion: [http://www.lithoguru.com/scientist/litho_tutor/TUTOR09%20(Winter%2095).pdf The Lithography Tutor: Photoresist Development]<br />
<br />
=Addtional Photolithography Resources=<br />
<br />
*[https://cleanroom.byu.edu/processes#Microfab_PhotoLith BYU Photolithography Guide]<br />
<br />
*[https://kayakuam.com/techreferences/lithography-terms/ Lithography Terminology]<br />
<br />
*[https://cleanroom.byu.edu/definitions Lithography Terminology 2]<br />
<br />
*[https://pages.mtu.edu/~microweb/chap1/ch1-4-1.htm Resolution Limits of Photolithography]</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Optical_Lithography_Resources&diff=2080Optical Lithography Resources2019-12-04T16:34:15Z<p>Dvin: /* Negative Photoresist Recipes */</p>
<hr />
<div>'''[https://www.microchemicals.com/downloads/application_notes.html Trove of lithography application notes from MicroChemicals covering troubleshooting, procedures, techniques, theory]'''<br />
<br />
=KNI Photoresists=<br />
<br />
Photoresists provided by KNI:<br />
<br />
*'''S1805, 1813, 1818''': field standard positive, may be used for liftoff and withstands some acid etching. Designed with lower toxicity materials. ([https://kayakuam.com/wp-content/uploads/2019/09/S1800-G2.pdf Manufacturer Spec Sheet]) Shipley 1800 series 0.5-1.9μm range available. 0.5-3.2μm available from manufacturer<br />
*'''AZ 5214''': exposable as positive and image reversal negative. Optimized for liftoff processes with negative sidewall profile. Structure is stable to 130°C after postbake. 1-2μm thickness ([https://www.microchemicals.com/micro/tds_az_nlof2000_series.pdf Manufacturer Spec Sheet])<br />
*'''AZ 9245, 9260''': Intended for thick positive structures 4-20μm. Lower optical absorption and sensitivity permits tall structures but development is slow. ([https://www.microchemicals.com/products/photoresists/az_9260.html Produce Page])<br />
*'''AZ nLof 2020, 2035, 2070''': Also optimized for liftoff processes but thicker than 5214 at 2-7μm spinnable. Structures are stable to 250°C. High chemical stability, e-beam exposable, but more difficult to remove. ([https://www.microchemicals.com/products/photoresists/az_nlof_2020.html Product Page])<br />
*'''AZ 3330-F''': medium resolution resist, high thermal stability, optimized for metal RIE etch or plating process environments. 1.0-5.0µm spinnable ([http://www.imicromaterials.com/index.php/products/ig-line-photoresists/az-3300-series Product Page])<br />
*'''AZ 4620''': improved surface adhesion for etching and plating applications, photosensitivity is broad and low, spinnable to 6 - 20 µm.<br />
*'''SU-8 2002, 2025, 2075, 2100, 3025, 3050''': epoxy-based negative resist. Optimal for tall high-aspect ratio permanent structures. ([https://kayakuam.com/products/su-8-photoresists/ Manufacturer Spec Sheet ]). Difficult to remove. Spinnable to 1.5-200μm thickness. <br />
<br />
<br />
<br />
'''''Reminder of lamp intensities:'''''<br />
<br />
'''Suss 1 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 15 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 25 mW/cm2.<br />
'''Suss 2 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 10 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 15 mW/cm2.<br />
<br />
==Positive Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| S1813 || Dehydrate on hot plate || 3000rpm || 1.5μm || 115C 1min || X || - || - || X || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19 (Link KNI recipe doc here)<br />
|-<br />
| AZ5214 || Dehydrate on hot plate || 3500rpm || 1.4μm || 100C 1min || 25s || - || - || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
==Negative Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | AZ5214 || Dehydrate on hot plate || 2000rpm || 1.8μm || 100C 1min || 12s || 110C 1min || 40s || MF319 60s || - || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| Dehydrate on hot plate || 3500rpm || 1.4μm || 100C 1min || 9s || 110C 1min || 30s || MF319 60s || - || Suss1 Ch1 || Measured 10/19<br />
|-<br />
| nLoF 2070 || Dehydrate on hot plate || 2500rpm || 7um || 110C 90s || 12s || 110C 90s || - || AZ 726 2min || - || Suss1 Ch1 || Measured 10/19<br />
|}<br />
<br />
==SU-8 Recipes==<br />
<br />
SU-8 is available in thicknesses ranging from 500nm to 500microns. Remember to use Laurel Spinner 1.<br />
<br />
Resist thicknesses currently provided by KNI: 2050, 2005, 2001, 2000.5<br />
<br />
[https://cleanroom.byu.edu/su8 BYU SU-8 Guide]<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| 2050 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
=Other Photoresists=<br />
<br />
*[https://cleanroom.byu.edu/resistmanufacturers BYU Comprehensive list of photoresists]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes UCSB Photoresist Recipes Page 1]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Contact_Alignment_Recipes UCSB Photoresist Recipes Page 2]<br />
<br />
*[https://cleanroom.byu.edu/photoresists BYU Photoresist Recipes]<br />
<br />
==Non-KNI Photoresist Recipes==<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| SPR 220-7.0 || - || - || - || - || - || - || - || - || - || - || Measured 10/19<br />
|-<br />
|}<br />
<br />
=KNI Developers=<br />
<br />
Developers provided by KNI:<br />
<br />
*'''AZ 726 MIF''': 2.38% TMAH-based, pre-diluted (ready-to-use) and slightly further diluted only when the application requires it. Contains surfactants to improve development uniformity, so avoid stirring. MIF identifies the developer as 'Metal Ion Free' as it does not contain potassium as in KOH-based developers, it is based on TMAH, an ammonium salt, which prevents metal contamination of semiconductors. 726 is a recommended developer for almost all AZ resists [https://www.microchemicals.com/technical_information/development_photoresist.pdf MicroChemicals Development Application Note]<br />
<br />
*'''Microposit MF 319''': (Metal-Free) TMAH: 2.45%, Polyalkylene glycol <1%, pH: 13. Paired to Shipley/Microposit 1800 series resists, S1805,S1813,S1818 [https://cpb-us-e1.wpmucdn.com/sites.usc.edu/dist/a/194/files/2018/07/MF-319-Developer-1iqbk7y.pdf MSDS]<br />
<br />
*'''Microposit CD-26''': TMAH <5.0 % , pH 13, Also 1800 series targeted, no additional surfactants.<br />
<br />
*'''AZ 400K''': KOH-based. "The recommended dilutions for the AZ® 400 K or AZ® 351 B for most of the processes are developer concentrate : Water = 1: . For very thick resist films, up to a 1:3 ratio can be applied [with lower contrast], with a very fine (sub-µm) structures, a 1:5 or 1:6 ratio can support a high resolution using thin resist films." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note] Users can adjust dilution for accuracy and length of time they will tolerate.<br />
**Critical note on KOH use: "Incompatibilities between MIC and MIF Developers Even small traces of TMAH-based metal ion-free developers such as the AZ® 326 MIF, 726 MIF or 826 MIF) can significantly reduce the development rate of metal ion-containing developers (such as the AZ® 400K or 351B). If both types of developers are used, extremely clean work is to be ensured to prevent mutual contamination even in the ppm range, such as in the dispensing system or developer containers." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note]<br />
<br />
*'''Microposit 2401''': Legacy developer<br />
<br />
===Surfactants===<br />
<br />
Surfactants were developed and added in the 1980s to photoresist developers to combat photoresists' hydrophobic surfaces which cause "hot spots" of fast development. They reduce the surface tension and improve wetting (giving homogeneous development). The common drawback of their inclusion is foaming and an oily nature which makes them incompatible with some agitated processes. Surfactacts also change development speed since they coat photoresist surfaces and inhibit the dissolution reaction. As such exposure-development times must be adjusted and while contrast is improved, resolution may be lost. See here for more in depth discussion: [http://www.lithoguru.com/scientist/litho_tutor/TUTOR09%20(Winter%2095).pdf The Lithography Tutor: Photoresist Development]<br />
<br />
=Addtional Photolithography Resources=<br />
<br />
*[https://cleanroom.byu.edu/processes#Microfab_PhotoLith BYU Photolithography Guide]<br />
<br />
*[https://kayakuam.com/techreferences/lithography-terms/ Lithography Terminology]<br />
<br />
*[https://cleanroom.byu.edu/definitions Lithography Terminology 2]<br />
<br />
*[https://pages.mtu.edu/~microweb/chap1/ch1-4-1.htm Resolution Limits of Photolithography]</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Optical_Lithography_Resources&diff=2079Optical Lithography Resources2019-12-04T16:31:53Z<p>Dvin: /* KNI Photoresists */</p>
<hr />
<div>'''[https://www.microchemicals.com/downloads/application_notes.html Trove of lithography application notes from MicroChemicals covering troubleshooting, procedures, techniques, theory]'''<br />
<br />
=KNI Photoresists=<br />
<br />
Photoresists provided by KNI:<br />
<br />
*'''S1805, 1813, 1818''': field standard positive, may be used for liftoff and withstands some acid etching. Designed with lower toxicity materials. ([https://kayakuam.com/wp-content/uploads/2019/09/S1800-G2.pdf Manufacturer Spec Sheet]) Shipley 1800 series 0.5-1.9μm range available. 0.5-3.2μm available from manufacturer<br />
*'''AZ 5214''': exposable as positive and image reversal negative. Optimized for liftoff processes with negative sidewall profile. Structure is stable to 130°C after postbake. 1-2μm thickness ([https://www.microchemicals.com/micro/tds_az_nlof2000_series.pdf Manufacturer Spec Sheet])<br />
*'''AZ 9245, 9260''': Intended for thick positive structures 4-20μm. Lower optical absorption and sensitivity permits tall structures but development is slow. ([https://www.microchemicals.com/products/photoresists/az_9260.html Produce Page])<br />
*'''AZ nLof 2020, 2035, 2070''': Also optimized for liftoff processes but thicker than 5214 at 2-7μm spinnable. Structures are stable to 250°C. High chemical stability, e-beam exposable, but more difficult to remove. ([https://www.microchemicals.com/products/photoresists/az_nlof_2020.html Product Page])<br />
*'''AZ 3330-F''': medium resolution resist, high thermal stability, optimized for metal RIE etch or plating process environments. 1.0-5.0µm spinnable ([http://www.imicromaterials.com/index.php/products/ig-line-photoresists/az-3300-series Product Page])<br />
*'''AZ 4620''': improved surface adhesion for etching and plating applications, photosensitivity is broad and low, spinnable to 6 - 20 µm.<br />
*'''SU-8 2002, 2025, 2075, 2100, 3025, 3050''': epoxy-based negative resist. Optimal for tall high-aspect ratio permanent structures. ([https://kayakuam.com/products/su-8-photoresists/ Manufacturer Spec Sheet ]). Difficult to remove. Spinnable to 1.5-200μm thickness. <br />
<br />
<br />
<br />
'''''Reminder of lamp intensities:'''''<br />
<br />
'''Suss 1 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 15 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 25 mW/cm2.<br />
'''Suss 2 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 10 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 15 mW/cm2.<br />
<br />
==Positive Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| S1813 || Dehydrate on hot plate || 3000rpm || 1.5μm || 115C 1min || X || - || - || X || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19 (Link KNI recipe doc here)<br />
|-<br />
| AZ5214 || Dehydrate on hot plate || 3500rpm || 1.4μm || 100C 1min || 25s || - || - || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
==Negative Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | AZ5214 || Dehydrate on hot plate || 2000rpm || 1.8μm || 100C 1min || 12s || 110C 1min || 40s || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|-<br />
| Dehydrate on hot plate || 3500rpm || 1.4μm || 100C 1min || 9s || 110C 1min || 30s || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|-<br />
| nLoF 2070 || Dehydrate on hot plate || 2500rpm || 7um || 110C 90s || 12s || 110C 90s || - || AZ 726 2min || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
==SU-8 Recipes==<br />
<br />
SU-8 is available in thicknesses ranging from 500nm to 500microns. Remember to use Laurel Spinner 1.<br />
<br />
Resist thicknesses currently provided by KNI: 2050, 2005, 2001, 2000.5<br />
<br />
[https://cleanroom.byu.edu/su8 BYU SU-8 Guide]<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| 2050 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
=Other Photoresists=<br />
<br />
*[https://cleanroom.byu.edu/resistmanufacturers BYU Comprehensive list of photoresists]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes UCSB Photoresist Recipes Page 1]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Contact_Alignment_Recipes UCSB Photoresist Recipes Page 2]<br />
<br />
*[https://cleanroom.byu.edu/photoresists BYU Photoresist Recipes]<br />
<br />
==Non-KNI Photoresist Recipes==<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| SPR 220-7.0 || - || - || - || - || - || - || - || - || - || - || Measured 10/19<br />
|-<br />
|}<br />
<br />
=KNI Developers=<br />
<br />
Developers provided by KNI:<br />
<br />
*'''AZ 726 MIF''': 2.38% TMAH-based, pre-diluted (ready-to-use) and slightly further diluted only when the application requires it. Contains surfactants to improve development uniformity, so avoid stirring. MIF identifies the developer as 'Metal Ion Free' as it does not contain potassium as in KOH-based developers, it is based on TMAH, an ammonium salt, which prevents metal contamination of semiconductors. 726 is a recommended developer for almost all AZ resists [https://www.microchemicals.com/technical_information/development_photoresist.pdf MicroChemicals Development Application Note]<br />
<br />
*'''Microposit MF 319''': (Metal-Free) TMAH: 2.45%, Polyalkylene glycol <1%, pH: 13. Paired to Shipley/Microposit 1800 series resists, S1805,S1813,S1818 [https://cpb-us-e1.wpmucdn.com/sites.usc.edu/dist/a/194/files/2018/07/MF-319-Developer-1iqbk7y.pdf MSDS]<br />
<br />
*'''Microposit CD-26''': TMAH <5.0 % , pH 13, Also 1800 series targeted, no additional surfactants.<br />
<br />
*'''AZ 400K''': KOH-based. "The recommended dilutions for the AZ® 400 K or AZ® 351 B for most of the processes are developer concentrate : Water = 1: . For very thick resist films, up to a 1:3 ratio can be applied [with lower contrast], with a very fine (sub-µm) structures, a 1:5 or 1:6 ratio can support a high resolution using thin resist films." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note] Users can adjust dilution for accuracy and length of time they will tolerate.<br />
**Critical note on KOH use: "Incompatibilities between MIC and MIF Developers Even small traces of TMAH-based metal ion-free developers such as the AZ® 326 MIF, 726 MIF or 826 MIF) can significantly reduce the development rate of metal ion-containing developers (such as the AZ® 400K or 351B). If both types of developers are used, extremely clean work is to be ensured to prevent mutual contamination even in the ppm range, such as in the dispensing system or developer containers." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note]<br />
<br />
*'''Microposit 2401''': Legacy developer<br />
<br />
===Surfactants===<br />
<br />
Surfactants were developed and added in the 1980s to photoresist developers to combat photoresists' hydrophobic surfaces which cause "hot spots" of fast development. They reduce the surface tension and improve wetting (giving homogeneous development). The common drawback of their inclusion is foaming and an oily nature which makes them incompatible with some agitated processes. Surfactacts also change development speed since they coat photoresist surfaces and inhibit the dissolution reaction. As such exposure-development times must be adjusted and while contrast is improved, resolution may be lost. See here for more in depth discussion: [http://www.lithoguru.com/scientist/litho_tutor/TUTOR09%20(Winter%2095).pdf The Lithography Tutor: Photoresist Development]<br />
<br />
=Addtional Photolithography Resources=<br />
<br />
*[https://cleanroom.byu.edu/processes#Microfab_PhotoLith BYU Photolithography Guide]<br />
<br />
*[https://kayakuam.com/techreferences/lithography-terms/ Lithography Terminology]<br />
<br />
*[https://cleanroom.byu.edu/definitions Lithography Terminology 2]<br />
<br />
*[https://pages.mtu.edu/~microweb/chap1/ch1-4-1.htm Resolution Limits of Photolithography]</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Optical_Lithography_Resources&diff=2078Optical Lithography Resources2019-12-04T16:25:31Z<p>Dvin: /* Positive Photoresist Recipes */</p>
<hr />
<div>'''[https://www.microchemicals.com/downloads/application_notes.html Trove of lithography application notes from MicroChemicals covering troubleshooting, procedures, techniques, theory]'''<br />
<br />
=KNI Photoresists=<br />
<br />
Photoresists provided by KNI:<br />
<br />
*'''S1805, 1813, 1818''': field standard positive, may be used for liftoff and withstands some acid etching. Designed with lower toxicity materials. ([https://kayakuam.com/wp-content/uploads/2019/09/S1800-G2.pdf Manufacturer Spec Sheet]) Shipley 1800 series 0.5-1.9μm range available. 0.5-3.2μm available from manufacturer<br />
*'''AZ 5214''': exposable as positive and image reversal negative. Optimized for liftoff processes with negative sidewall profile. Structure is stable to 130°C after postbake. 1-2μm thickness ([https://www.microchemicals.com/micro/tds_az_nlof2000_series.pdf Manufacturer Spec Sheet])<br />
*'''AZ 9245, 9260''': Intended for thick positive structures 4-20μm. Lower optical absorption and sensitivity permits tall structures but development is slow. ([https://www.microchemicals.com/products/photoresists/az_9260.html Produce Page])<br />
*'''AZ nLof 2020, 2035, 2070''': Also optimized for liftoff processes but thicker than 5214 at 2-7μm spinnable. Structures are stable to 250°C. High chemical stability, e-beam exposable, but more difficult to remove. ([https://www.microchemicals.com/products/photoresists/az_nlof_2020.html Product Page])<br />
*'''AZ 3330-F''': medium resolution resist, high thermal stability, optimized for metal RIE etch or plating process environments. 1.0-5.0µm spinnable ([http://www.imicromaterials.com/index.php/products/ig-line-photoresists/az-3300-series Product Page])<br />
*'''AZ 4620''': improved surface adhesion for etching and plating applications, photosensitivity is broad and low, spinnable to 6 - 20 µm.<br />
*'''SU-8 2002, 2025, 2075, 2100, 3025, 3050''': epoxy-based negative resist. Permits tall high-aspect ratio permanent structures. ([https://kayakuam.com/products/su-8-photoresists/ Manufacturer Spec Sheet ]). Difficult to remove. Spinnable to 1.5-200μm thickness. <br />
<br />
<br />
<br />
'''''Reminder of lamp intensities:'''''<br />
<br />
'''Suss 1 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 15 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 25 mW/cm2.<br />
'''Suss 2 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 10 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 15 mW/cm2.<br />
<br />
==Positive Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| S1813 || Dehydrate on hot plate || 3000rpm || 1.5μm || 115C 1min || X || - || - || X || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19 (Link KNI recipe doc here)<br />
|-<br />
| AZ5214 || Dehydrate on hot plate || 3500rpm || 1.4μm || 100C 1min || 25s || - || - || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
==Negative Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | AZ5214 || Dehydrate on hot plate || 2000rpm || 1.8μm || 100C 1min || 12s || 110C 1min || 40s || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|-<br />
| Dehydrate on hot plate || 3500rpm || 1.4μm || 100C 1min || 9s || 110C 1min || 30s || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|-<br />
| nLoF 2070 || Dehydrate on hot plate || 2500rpm || 7um || 110C 90s || 12s || 110C 90s || - || AZ 726 2min || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
==SU-8 Recipes==<br />
<br />
SU-8 is available in thicknesses ranging from 500nm to 500microns. Remember to use Laurel Spinner 1.<br />
<br />
Resist thicknesses currently provided by KNI: 2050, 2005, 2001, 2000.5<br />
<br />
[https://cleanroom.byu.edu/su8 BYU SU-8 Guide]<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| 2050 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
=Other Photoresists=<br />
<br />
*[https://cleanroom.byu.edu/resistmanufacturers BYU Comprehensive list of photoresists]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes UCSB Photoresist Recipes Page 1]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Contact_Alignment_Recipes UCSB Photoresist Recipes Page 2]<br />
<br />
*[https://cleanroom.byu.edu/photoresists BYU Photoresist Recipes]<br />
<br />
==Non-KNI Photoresist Recipes==<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| SPR 220-7.0 || - || - || - || - || - || - || - || - || - || - || Measured 10/19<br />
|-<br />
|}<br />
<br />
=KNI Developers=<br />
<br />
Developers provided by KNI:<br />
<br />
*'''AZ 726 MIF''': 2.38% TMAH-based, pre-diluted (ready-to-use) and slightly further diluted only when the application requires it. Contains surfactants to improve development uniformity, so avoid stirring. MIF identifies the developer as 'Metal Ion Free' as it does not contain potassium as in KOH-based developers, it is based on TMAH, an ammonium salt, which prevents metal contamination of semiconductors. 726 is a recommended developer for almost all AZ resists [https://www.microchemicals.com/technical_information/development_photoresist.pdf MicroChemicals Development Application Note]<br />
<br />
*'''Microposit MF 319''': (Metal-Free) TMAH: 2.45%, Polyalkylene glycol <1%, pH: 13. Paired to Shipley/Microposit 1800 series resists, S1805,S1813,S1818 [https://cpb-us-e1.wpmucdn.com/sites.usc.edu/dist/a/194/files/2018/07/MF-319-Developer-1iqbk7y.pdf MSDS]<br />
<br />
*'''Microposit CD-26''': TMAH <5.0 % , pH 13, Also 1800 series targeted, no additional surfactants.<br />
<br />
*'''AZ 400K''': KOH-based. "The recommended dilutions for the AZ® 400 K or AZ® 351 B for most of the processes are developer concentrate : Water = 1: . For very thick resist films, up to a 1:3 ratio can be applied [with lower contrast], with a very fine (sub-µm) structures, a 1:5 or 1:6 ratio can support a high resolution using thin resist films." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note] Users can adjust dilution for accuracy and length of time they will tolerate.<br />
**Critical note on KOH use: "Incompatibilities between MIC and MIF Developers Even small traces of TMAH-based metal ion-free developers such as the AZ® 326 MIF, 726 MIF or 826 MIF) can significantly reduce the development rate of metal ion-containing developers (such as the AZ® 400K or 351B). If both types of developers are used, extremely clean work is to be ensured to prevent mutual contamination even in the ppm range, such as in the dispensing system or developer containers." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note]<br />
<br />
*'''Microposit 2401''': Legacy developer<br />
<br />
===Surfactants===<br />
<br />
Surfactants were developed and added in the 1980s to photoresist developers to combat photoresists' hydrophobic surfaces which cause "hot spots" of fast development. They reduce the surface tension and improve wetting (giving homogeneous development). The common drawback of their inclusion is foaming and an oily nature which makes them incompatible with some agitated processes. Surfactacts also change development speed since they coat photoresist surfaces and inhibit the dissolution reaction. As such exposure-development times must be adjusted and while contrast is improved, resolution may be lost. See here for more in depth discussion: [http://www.lithoguru.com/scientist/litho_tutor/TUTOR09%20(Winter%2095).pdf The Lithography Tutor: Photoresist Development]<br />
<br />
=Addtional Photolithography Resources=<br />
<br />
*[https://cleanroom.byu.edu/processes#Microfab_PhotoLith BYU Photolithography Guide]<br />
<br />
*[https://kayakuam.com/techreferences/lithography-terms/ Lithography Terminology]<br />
<br />
*[https://cleanroom.byu.edu/definitions Lithography Terminology 2]<br />
<br />
*[https://pages.mtu.edu/~microweb/chap1/ch1-4-1.htm Resolution Limits of Photolithography]</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Optical_Lithography_Resources&diff=2077Optical Lithography Resources2019-12-04T16:25:11Z<p>Dvin: </p>
<hr />
<div>'''[https://www.microchemicals.com/downloads/application_notes.html Trove of lithography application notes from MicroChemicals covering troubleshooting, procedures, techniques, theory]'''<br />
<br />
=KNI Photoresists=<br />
<br />
Photoresists provided by KNI:<br />
<br />
*'''S1805, 1813, 1818''': field standard positive, may be used for liftoff and withstands some acid etching. Designed with lower toxicity materials. ([https://kayakuam.com/wp-content/uploads/2019/09/S1800-G2.pdf Manufacturer Spec Sheet]) Shipley 1800 series 0.5-1.9μm range available. 0.5-3.2μm available from manufacturer<br />
*'''AZ 5214''': exposable as positive and image reversal negative. Optimized for liftoff processes with negative sidewall profile. Structure is stable to 130°C after postbake. 1-2μm thickness ([https://www.microchemicals.com/micro/tds_az_nlof2000_series.pdf Manufacturer Spec Sheet])<br />
*'''AZ 9245, 9260''': Intended for thick positive structures 4-20μm. Lower optical absorption and sensitivity permits tall structures but development is slow. ([https://www.microchemicals.com/products/photoresists/az_9260.html Produce Page])<br />
*'''AZ nLof 2020, 2035, 2070''': Also optimized for liftoff processes but thicker than 5214 at 2-7μm spinnable. Structures are stable to 250°C. High chemical stability, e-beam exposable, but more difficult to remove. ([https://www.microchemicals.com/products/photoresists/az_nlof_2020.html Product Page])<br />
*'''AZ 3330-F''': medium resolution resist, high thermal stability, optimized for metal RIE etch or plating process environments. 1.0-5.0µm spinnable ([http://www.imicromaterials.com/index.php/products/ig-line-photoresists/az-3300-series Product Page])<br />
*'''AZ 4620''': improved surface adhesion for etching and plating applications, photosensitivity is broad and low, spinnable to 6 - 20 µm.<br />
*'''SU-8 2002, 2025, 2075, 2100, 3025, 3050''': epoxy-based negative resist. Permits tall high-aspect ratio permanent structures. ([https://kayakuam.com/products/su-8-photoresists/ Manufacturer Spec Sheet ]). Difficult to remove. Spinnable to 1.5-200μm thickness. <br />
<br />
<br />
<br />
'''''Reminder of lamp intensities:'''''<br />
<br />
'''Suss 1 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 15 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 25 mW/cm2.<br />
'''Suss 2 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 10 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 15 mW/cm2.<br />
<br />
==Positive Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| S1813 || Dehydrate on hot plate || 3000rpm || 1.5μmm || 115C 1min || X || - || - || X || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19 (Link KNI recipe doc here)<br />
|-<br />
| AZ5214 || Dehydrate on hot plate || 3500rpm || 1.4μm || 100C 1min || 25s || - || - || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
==Negative Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | AZ5214 || Dehydrate on hot plate || 2000rpm || 1.8μm || 100C 1min || 12s || 110C 1min || 40s || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|-<br />
| Dehydrate on hot plate || 3500rpm || 1.4μm || 100C 1min || 9s || 110C 1min || 30s || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|-<br />
| nLoF 2070 || Dehydrate on hot plate || 2500rpm || 7um || 110C 90s || 12s || 110C 90s || - || AZ 726 2min || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
==SU-8 Recipes==<br />
<br />
SU-8 is available in thicknesses ranging from 500nm to 500microns. Remember to use Laurel Spinner 1.<br />
<br />
Resist thicknesses currently provided by KNI: 2050, 2005, 2001, 2000.5<br />
<br />
[https://cleanroom.byu.edu/su8 BYU SU-8 Guide]<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| 2050 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
=Other Photoresists=<br />
<br />
*[https://cleanroom.byu.edu/resistmanufacturers BYU Comprehensive list of photoresists]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes UCSB Photoresist Recipes Page 1]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Contact_Alignment_Recipes UCSB Photoresist Recipes Page 2]<br />
<br />
*[https://cleanroom.byu.edu/photoresists BYU Photoresist Recipes]<br />
<br />
==Non-KNI Photoresist Recipes==<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| SPR 220-7.0 || - || - || - || - || - || - || - || - || - || - || Measured 10/19<br />
|-<br />
|}<br />
<br />
=KNI Developers=<br />
<br />
Developers provided by KNI:<br />
<br />
*'''AZ 726 MIF''': 2.38% TMAH-based, pre-diluted (ready-to-use) and slightly further diluted only when the application requires it. Contains surfactants to improve development uniformity, so avoid stirring. MIF identifies the developer as 'Metal Ion Free' as it does not contain potassium as in KOH-based developers, it is based on TMAH, an ammonium salt, which prevents metal contamination of semiconductors. 726 is a recommended developer for almost all AZ resists [https://www.microchemicals.com/technical_information/development_photoresist.pdf MicroChemicals Development Application Note]<br />
<br />
*'''Microposit MF 319''': (Metal-Free) TMAH: 2.45%, Polyalkylene glycol <1%, pH: 13. Paired to Shipley/Microposit 1800 series resists, S1805,S1813,S1818 [https://cpb-us-e1.wpmucdn.com/sites.usc.edu/dist/a/194/files/2018/07/MF-319-Developer-1iqbk7y.pdf MSDS]<br />
<br />
*'''Microposit CD-26''': TMAH <5.0 % , pH 13, Also 1800 series targeted, no additional surfactants.<br />
<br />
*'''AZ 400K''': KOH-based. "The recommended dilutions for the AZ® 400 K or AZ® 351 B for most of the processes are developer concentrate : Water = 1: . For very thick resist films, up to a 1:3 ratio can be applied [with lower contrast], with a very fine (sub-µm) structures, a 1:5 or 1:6 ratio can support a high resolution using thin resist films." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note] Users can adjust dilution for accuracy and length of time they will tolerate.<br />
**Critical note on KOH use: "Incompatibilities between MIC and MIF Developers Even small traces of TMAH-based metal ion-free developers such as the AZ® 326 MIF, 726 MIF or 826 MIF) can significantly reduce the development rate of metal ion-containing developers (such as the AZ® 400K or 351B). If both types of developers are used, extremely clean work is to be ensured to prevent mutual contamination even in the ppm range, such as in the dispensing system or developer containers." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note]<br />
<br />
*'''Microposit 2401''': Legacy developer<br />
<br />
===Surfactants===<br />
<br />
Surfactants were developed and added in the 1980s to photoresist developers to combat photoresists' hydrophobic surfaces which cause "hot spots" of fast development. They reduce the surface tension and improve wetting (giving homogeneous development). The common drawback of their inclusion is foaming and an oily nature which makes them incompatible with some agitated processes. Surfactacts also change development speed since they coat photoresist surfaces and inhibit the dissolution reaction. As such exposure-development times must be adjusted and while contrast is improved, resolution may be lost. See here for more in depth discussion: [http://www.lithoguru.com/scientist/litho_tutor/TUTOR09%20(Winter%2095).pdf The Lithography Tutor: Photoresist Development]<br />
<br />
=Addtional Photolithography Resources=<br />
<br />
*[https://cleanroom.byu.edu/processes#Microfab_PhotoLith BYU Photolithography Guide]<br />
<br />
*[https://kayakuam.com/techreferences/lithography-terms/ Lithography Terminology]<br />
<br />
*[https://cleanroom.byu.edu/definitions Lithography Terminology 2]<br />
<br />
*[https://pages.mtu.edu/~microweb/chap1/ch1-4-1.htm Resolution Limits of Photolithography]</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Optical_Lithography_Resources&diff=2076Optical Lithography Resources2019-12-04T16:22:04Z<p>Dvin: /* KNI Photoresists */</p>
<hr />
<div>'''[https://www.microchemicals.com/downloads/application_notes.html Trove of lithography application notes from MicroChemicals covering troubleshooting, procedures, techniques, theory]'''<br />
<br />
=KNI Photoresists=<br />
<br />
Photoresists provided by KNI:<br />
<br />
*'''S1805, 1813, 1818''': field standard positive, may be used for liftoff and withstands some acid etching. Designed with lower toxicity materials. ([https://kayakuam.com/wp-content/uploads/2019/09/S1800-G2.pdf Manufacturer Spec Sheet]) Shipley 1800 series 0.5-1.9μm range available. 0.5-3.2μm available from manufacturer<br />
*'''AZ 5214''': exposable as positive and image reversal negative. Optimized for liftoff processes with negative sidewall profile. Structure is stable to 130°C after postbake. 1-2μm thickness ([https://www.microchemicals.com/micro/tds_az_nlof2000_series.pdf Manufacturer Spec Sheet])<br />
*'''AZ 9245, 9260''': Intended for thick positive structures 4-20μm. Lower optical absorption and sensitivity permits tall structures but development is slow. ([https://www.microchemicals.com/products/photoresists/az_9260.html Produce Page])<br />
*'''AZ nLof 2020, 2035, 2070''': Also optimized for liftoff processes but thicker than 5214 at 2-7μm spinnable. Structures are stable to 250°C. High chemical stability, e-beam exposable, but more difficult to remove. ([https://www.microchemicals.com/products/photoresists/az_nlof_2020.html Product Page])<br />
*'''AZ 3330-F''': medium resolution resist, high thermal stability, optimized for metal RIE etch or plating process environments. 1.0-5.0µm spinnable ([http://www.imicromaterials.com/index.php/products/ig-line-photoresists/az-3300-series Product Page])<br />
*'''AZ 4620''': improved surface adhesion for etching and plating applications, photosensitivity is broad and low, spinnable to 6 - 20 µm.<br />
*'''SU-8 2002, 2025, 2075, 2100, 3025, 3050''': epoxy-based negative resist. Permits tall high-aspect ratio permanent structures. ([https://kayakuam.com/products/su-8-photoresists/ Manufacturer Spec Sheet ]). Difficult to remove. Spinnable to 1.5-200μm thickness. <br />
<br />
<br />
<br />
'''''Reminder of lamp intensities:'''''<br />
<br />
'''Suss 1 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 15 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 25 mW/cm2.<br />
'''Suss 2 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 10 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 15 mW/cm2.<br />
<br />
==Positive Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| S1813 || Dehydrate on hot plate || 3000rpm || 1.5μmm || 115C 1min || X || - || - || X || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19 (Link KNI recipe doc here)<br />
|-<br />
| AZ5214 || Dehydrate on hot plate || 3500rpm || 1.4μm || 100C 1min || 25s || - || - || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
==Negative Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | AZ5214 || Dehydrate on hot plate || 2000rpm || 1.8μm || 100C 1min || 12s || 110C 1min || 40s || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|-<br />
| Dehydrate on hot plate || 3500rpm || 1.4μm || 100C 1min || 9s || 110C 1min || 30s || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
==SU-8 Recipes==<br />
<br />
SU-8 is available in thicknesses ranging from 500nm to 500microns. Remember to use Laurel Spinner 1.<br />
<br />
Resist thicknesses currently provided by KNI: 2050, 2005, 2001, 2000.5<br />
<br />
[https://cleanroom.byu.edu/su8 BYU SU-8 Guide]<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| 2050 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
=Other Photoresists=<br />
<br />
*[https://cleanroom.byu.edu/resistmanufacturers BYU Comprehensive list of photoresists]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes UCSB Photoresist Recipes Page 1]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Contact_Alignment_Recipes UCSB Photoresist Recipes Page 2]<br />
<br />
*[https://cleanroom.byu.edu/photoresists BYU Photoresist Recipes]<br />
<br />
==Non-KNI Photoresist Recipes==<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| nLoF 2070 || Dehydrate on hot plate || 2500rpm || 7um || 110C 90s || 12s || 110C 90s || - || AZ 729 2min || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|-<br />
|}<br />
<br />
=KNI Developers=<br />
<br />
Developers provided by KNI:<br />
<br />
*'''AZ 726 MIF''': 2.38% TMAH-based, pre-diluted (ready-to-use) and slightly further diluted only when the application requires it. Contains surfactants to improve development uniformity, so avoid stirring. MIF identifies the developer as 'Metal Ion Free' as it does not contain potassium as in KOH-based developers, it is based on TMAH, an ammonium salt, which prevents metal contamination of semiconductors. 726 is a recommended developer for almost all AZ resists [https://www.microchemicals.com/technical_information/development_photoresist.pdf MicroChemicals Development Application Note]<br />
<br />
*'''Microposit MF 319''': (Metal-Free) TMAH: 2.45%, Polyalkylene glycol <1%, pH: 13. Paired to Shipley/Microposit 1800 series resists, S1805,S1813,S1818 [https://cpb-us-e1.wpmucdn.com/sites.usc.edu/dist/a/194/files/2018/07/MF-319-Developer-1iqbk7y.pdf MSDS]<br />
<br />
*'''Microposit CD-26''': TMAH <5.0 % , pH 13, Also 1800 series targeted, no additional surfactants.<br />
<br />
*'''AZ 400K''': KOH-based. "The recommended dilutions for the AZ® 400 K or AZ® 351 B for most of the processes are developer concentrate : Water = 1: . For very thick resist films, up to a 1:3 ratio can be applied [with lower contrast], with a very fine (sub-µm) structures, a 1:5 or 1:6 ratio can support a high resolution using thin resist films." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note] Users can adjust dilution for accuracy and length of time they will tolerate.<br />
**Critical note on KOH use: "Incompatibilities between MIC and MIF Developers Even small traces of TMAH-based metal ion-free developers such as the AZ® 326 MIF, 726 MIF or 826 MIF) can significantly reduce the development rate of metal ion-containing developers (such as the AZ® 400K or 351B). If both types of developers are used, extremely clean work is to be ensured to prevent mutual contamination even in the ppm range, such as in the dispensing system or developer containers." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note]<br />
<br />
*'''Microposit 2401''': Legacy developer<br />
<br />
===Surfactants===<br />
<br />
Surfactants were developed and added in the 1980s to photoresist developers to combat photoresists' hydrophobic surfaces which cause "hot spots" of fast development. They reduce the surface tension and improve wetting (giving homogeneous development). The common drawback of their inclusion is foaming and an oily nature which makes them incompatible with some agitated processes. Surfactacts also change development speed since they coat photoresist surfaces and inhibit the dissolution reaction. As such exposure-development times must be adjusted and while contrast is improved, resolution may be lost. See here for more in depth discussion: [http://www.lithoguru.com/scientist/litho_tutor/TUTOR09%20(Winter%2095).pdf The Lithography Tutor: Photoresist Development]<br />
<br />
=Addtional Photolithography Resources=<br />
<br />
*[https://cleanroom.byu.edu/processes#Microfab_PhotoLith BYU Photolithography Guide]<br />
<br />
*[https://kayakuam.com/techreferences/lithography-terms/ Lithography Terminology]<br />
<br />
*[https://cleanroom.byu.edu/definitions Lithography Terminology 2]<br />
<br />
*[https://pages.mtu.edu/~microweb/chap1/ch1-4-1.htm Resolution Limits of Photolithography]</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Optical_Lithography_Resources&diff=2075Optical Lithography Resources2019-12-04T16:20:34Z<p>Dvin: /* KNI Photoresists */</p>
<hr />
<div>'''[https://www.microchemicals.com/downloads/application_notes.html Trove of lithography application notes from MicroChemicals covering troubleshooting, procedures, techniques, theory]'''<br />
<br />
=KNI Photoresists=<br />
<br />
Photoresists provided by KNI:<br />
<br />
*'''S1805, 1813, 1818''': field standard positive, may be used for liftoff and withstands some acid etching. Designed with lower toxicity materials. ([https://kayakuam.com/wp-content/uploads/2019/09/S1800-G2.pdf Manufacturer Spec Sheet]) Shipley 1800 series 0.5-1.9μm range available. 0.5-3.2μm available from manufacturer<br />
*'''AZ 5214''': exposable as positive and image reversal negative. Optimized for liftoff processes with negative sidewall profile. Structure is stable to 130°C after postbake. 1-2μm thickness ([https://www.microchemicals.com/micro/tds_az_nlof2000_series.pdf Manufacturer Spec Sheet])<br />
*'''AZ 9245, 9260''': Intended for thick positive structures 4-20μm. Lower optical absorption and sensitivity permits tall structures but development is slow. ([https://www.microchemicals.com/products/photoresists/az_9260.html Produce Page])<br />
*'''AZ nLof 2020, 2035, 2070''': Also optimized for liftoff processes but thicker than 5214 at 2-7μm spinnable. Structures are stable to 250°C. High chemical stability, e-beam exposable, but more difficult to remove. ([https://www.microchemicals.com/products/photoresists/az_nlof_2020.html Product Page])<br />
*'''AZ 3330-F''': medium resolution resist, high thermal stability, optimized for metal RIE etch or plating process environments. 1.0-5.0µm spinnable ([http://www.imicromaterials.com/index.php/products/ig-line-photoresists/az-3300-series Product Page])<br />
*'''AZ 4620''': improved surface adhesion for etching and plating applications, photosensitivity is broad and low, spinnable to 6 - 20 µm.<br />
*'''SU-8 2002, 2025, 2075, 2100, 3025, 3050''': epoxy-based negative resist. Permits tall high-aspect ratio permanent structures. ([https://kayakuam.com/products/su-8-photoresists/ Manufacturer Spec Sheet ]). Difficult to remove.<br />
<br />
<br />
<br />
'''''Reminder of lamp intensities:'''''<br />
<br />
'''Suss 1 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 15 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 25 mW/cm2.<br />
'''Suss 2 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 10 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 15 mW/cm2.<br />
<br />
==Positive Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| S1813 || Dehydrate on hot plate || 3000rpm || 1.5μmm || 115C 1min || X || - || - || X || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19 (Link KNI recipe doc here)<br />
|-<br />
| AZ5214 || Dehydrate on hot plate || 3500rpm || 1.4μm || 100C 1min || 25s || - || - || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
==Negative Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | AZ5214 || Dehydrate on hot plate || 2000rpm || 1.8μm || 100C 1min || 12s || 110C 1min || 40s || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|-<br />
| Dehydrate on hot plate || 3500rpm || 1.4μm || 100C 1min || 9s || 110C 1min || 30s || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
==SU-8 Recipes==<br />
<br />
SU-8 is available in thicknesses ranging from 500nm to 500microns. Remember to use Laurel Spinner 1.<br />
<br />
Resist thicknesses currently provided by KNI: 2050, 2005, 2001, 2000.5<br />
<br />
[https://cleanroom.byu.edu/su8 BYU SU-8 Guide]<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| 2050 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
=Other Photoresists=<br />
<br />
*[https://cleanroom.byu.edu/resistmanufacturers BYU Comprehensive list of photoresists]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes UCSB Photoresist Recipes Page 1]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Contact_Alignment_Recipes UCSB Photoresist Recipes Page 2]<br />
<br />
*[https://cleanroom.byu.edu/photoresists BYU Photoresist Recipes]<br />
<br />
==Non-KNI Photoresist Recipes==<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| nLoF 2070 || Dehydrate on hot plate || 2500rpm || 7um || 110C 90s || 12s || 110C 90s || - || AZ 729 2min || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|-<br />
|}<br />
<br />
=KNI Developers=<br />
<br />
Developers provided by KNI:<br />
<br />
*'''AZ 726 MIF''': 2.38% TMAH-based, pre-diluted (ready-to-use) and slightly further diluted only when the application requires it. Contains surfactants to improve development uniformity, so avoid stirring. MIF identifies the developer as 'Metal Ion Free' as it does not contain potassium as in KOH-based developers, it is based on TMAH, an ammonium salt, which prevents metal contamination of semiconductors. 726 is a recommended developer for almost all AZ resists [https://www.microchemicals.com/technical_information/development_photoresist.pdf MicroChemicals Development Application Note]<br />
<br />
*'''Microposit MF 319''': (Metal-Free) TMAH: 2.45%, Polyalkylene glycol <1%, pH: 13. Paired to Shipley/Microposit 1800 series resists, S1805,S1813,S1818 [https://cpb-us-e1.wpmucdn.com/sites.usc.edu/dist/a/194/files/2018/07/MF-319-Developer-1iqbk7y.pdf MSDS]<br />
<br />
*'''Microposit CD-26''': TMAH <5.0 % , pH 13, Also 1800 series targeted, no additional surfactants.<br />
<br />
*'''AZ 400K''': KOH-based. "The recommended dilutions for the AZ® 400 K or AZ® 351 B for most of the processes are developer concentrate : Water = 1: . For very thick resist films, up to a 1:3 ratio can be applied [with lower contrast], with a very fine (sub-µm) structures, a 1:5 or 1:6 ratio can support a high resolution using thin resist films." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note] Users can adjust dilution for accuracy and length of time they will tolerate.<br />
**Critical note on KOH use: "Incompatibilities between MIC and MIF Developers Even small traces of TMAH-based metal ion-free developers such as the AZ® 326 MIF, 726 MIF or 826 MIF) can significantly reduce the development rate of metal ion-containing developers (such as the AZ® 400K or 351B). If both types of developers are used, extremely clean work is to be ensured to prevent mutual contamination even in the ppm range, such as in the dispensing system or developer containers." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note]<br />
<br />
*'''Microposit 2401''': Legacy developer<br />
<br />
===Surfactants===<br />
<br />
Surfactants were developed and added in the 1980s to photoresist developers to combat photoresists' hydrophobic surfaces which cause "hot spots" of fast development. They reduce the surface tension and improve wetting (giving homogeneous development). The common drawback of their inclusion is foaming and an oily nature which makes them incompatible with some agitated processes. Surfactacts also change development speed since they coat photoresist surfaces and inhibit the dissolution reaction. As such exposure-development times must be adjusted and while contrast is improved, resolution may be lost. See here for more in depth discussion: [http://www.lithoguru.com/scientist/litho_tutor/TUTOR09%20(Winter%2095).pdf The Lithography Tutor: Photoresist Development]<br />
<br />
=Addtional Photolithography Resources=<br />
<br />
*[https://cleanroom.byu.edu/processes#Microfab_PhotoLith BYU Photolithography Guide]<br />
<br />
*[https://kayakuam.com/techreferences/lithography-terms/ Lithography Terminology]<br />
<br />
*[https://cleanroom.byu.edu/definitions Lithography Terminology 2]<br />
<br />
*[https://pages.mtu.edu/~microweb/chap1/ch1-4-1.htm Resolution Limits of Photolithography]</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Optical_Lithography_Resources&diff=2074Optical Lithography Resources2019-12-04T16:19:33Z<p>Dvin: /* KNI Photoresists */</p>
<hr />
<div>'''[https://www.microchemicals.com/downloads/application_notes.html Trove of lithography application notes from MicroChemicals covering troubleshooting, procedures, techniques, theory]'''<br />
<br />
=KNI Photoresists=<br />
<br />
Photoresists provided by KNI:<br />
<br />
*'''S1805, 1813, 1818''': field standard positive, may be used for liftoff and withstands some acid etching. Designed with lower toxicity materials. ([https://kayakuam.com/wp-content/uploads/2019/09/S1800-G2.pdf Manufacturer Spec Sheet]) Shipley 1800 series 0.5-1.9μm range available. 0.5-3.2μm available from manufacturer<br />
*'''AZ 5214''': exposable as positive and image reversal negative. Optimized for liftoff processes with negative sidewall profile. Structure is stable to 130°C after postbake. 1-2μm thickness ([https://www.microchemicals.com/micro/tds_az_nlof2000_series.pdf Manufacturer Spec Sheet])<br />
*'''AZ 9245, 9260''': Intended for thick positive structures 4-20μm. Lower optical absorption and sensitivity permits tall structures but development is slow. ([https://www.microchemicals.com/products/photoresists/az_9260.html Produce Page])<br />
*'''AZ nLof 2020, nLof 2035, nLof 2070''': Also optimized for liftoff processes but thicker than 5214 at 2-7μm spinnable. Structures are stable to 250°C. High chemical stability, e-beam exposable, but more difficult to remove. ([https://www.microchemicals.com/products/photoresists/az_nlof_2020.html Product Page])<br />
*'''AZ 3330-F''': medium resolution resist, high thermal stability, optimized for metal RIE etch or plating process environments. 1.0-5.0µm spinnable ([http://www.imicromaterials.com/index.php/products/ig-line-photoresists/az-3300-series Product Page])<br />
*'''AZ 4620''': improved surface adhesion for etching and plating applications, photosensitivity is broad and low, spinnable to 6 - 20 µm.<br />
*'''SU-8 2002, SU-8 2025, SU-8 2075, SU-8 2100, SU-8 3025, SU-8 3050''': epoxy-based negative resist. Permits tall high-aspect ratio permanent structures. ([https://kayakuam.com/products/su-8-photoresists/ Manufacturer Spec Sheet ]). Difficult to remove.<br />
<br />
<br />
<br />
'''''Reminder of lamp intensities:'''''<br />
<br />
'''Suss 1 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 15 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 25 mW/cm2.<br />
'''Suss 2 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 10 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 15 mW/cm2.<br />
<br />
==Positive Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| S1813 || Dehydrate on hot plate || 3000rpm || 1.5μmm || 115C 1min || X || - || - || X || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19 (Link KNI recipe doc here)<br />
|-<br />
| AZ5214 || Dehydrate on hot plate || 3500rpm || 1.4μm || 100C 1min || 25s || - || - || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
==Negative Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | AZ5214 || Dehydrate on hot plate || 2000rpm || 1.8μm || 100C 1min || 12s || 110C 1min || 40s || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|-<br />
| Dehydrate on hot plate || 3500rpm || 1.4μm || 100C 1min || 9s || 110C 1min || 30s || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
==SU-8 Recipes==<br />
<br />
SU-8 is available in thicknesses ranging from 500nm to 500microns. Remember to use Laurel Spinner 1.<br />
<br />
Resist thicknesses currently provided by KNI: 2050, 2005, 2001, 2000.5<br />
<br />
[https://cleanroom.byu.edu/su8 BYU SU-8 Guide]<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| 2050 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
=Other Photoresists=<br />
<br />
*[https://cleanroom.byu.edu/resistmanufacturers BYU Comprehensive list of photoresists]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes UCSB Photoresist Recipes Page 1]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Contact_Alignment_Recipes UCSB Photoresist Recipes Page 2]<br />
<br />
*[https://cleanroom.byu.edu/photoresists BYU Photoresist Recipes]<br />
<br />
==Non-KNI Photoresist Recipes==<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| nLoF 2070 || Dehydrate on hot plate || 2500rpm || 7um || 110C 90s || 12s || 110C 90s || - || AZ 729 2min || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|-<br />
|}<br />
<br />
=KNI Developers=<br />
<br />
Developers provided by KNI:<br />
<br />
*'''AZ 726 MIF''': 2.38% TMAH-based, pre-diluted (ready-to-use) and slightly further diluted only when the application requires it. Contains surfactants to improve development uniformity, so avoid stirring. MIF identifies the developer as 'Metal Ion Free' as it does not contain potassium as in KOH-based developers, it is based on TMAH, an ammonium salt, which prevents metal contamination of semiconductors. 726 is a recommended developer for almost all AZ resists [https://www.microchemicals.com/technical_information/development_photoresist.pdf MicroChemicals Development Application Note]<br />
<br />
*'''Microposit MF 319''': (Metal-Free) TMAH: 2.45%, Polyalkylene glycol <1%, pH: 13. Paired to Shipley/Microposit 1800 series resists, S1805,S1813,S1818 [https://cpb-us-e1.wpmucdn.com/sites.usc.edu/dist/a/194/files/2018/07/MF-319-Developer-1iqbk7y.pdf MSDS]<br />
<br />
*'''Microposit CD-26''': TMAH <5.0 % , pH 13, Also 1800 series targeted, no additional surfactants.<br />
<br />
*'''AZ 400K''': KOH-based. "The recommended dilutions for the AZ® 400 K or AZ® 351 B for most of the processes are developer concentrate : Water = 1: . For very thick resist films, up to a 1:3 ratio can be applied [with lower contrast], with a very fine (sub-µm) structures, a 1:5 or 1:6 ratio can support a high resolution using thin resist films." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note] Users can adjust dilution for accuracy and length of time they will tolerate.<br />
**Critical note on KOH use: "Incompatibilities between MIC and MIF Developers Even small traces of TMAH-based metal ion-free developers such as the AZ® 326 MIF, 726 MIF or 826 MIF) can significantly reduce the development rate of metal ion-containing developers (such as the AZ® 400K or 351B). If both types of developers are used, extremely clean work is to be ensured to prevent mutual contamination even in the ppm range, such as in the dispensing system or developer containers." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note]<br />
<br />
*'''Microposit 2401''': Legacy developer<br />
<br />
===Surfactants===<br />
<br />
Surfactants were developed and added in the 1980s to photoresist developers to combat photoresists' hydrophobic surfaces which cause "hot spots" of fast development. They reduce the surface tension and improve wetting (giving homogeneous development). The common drawback of their inclusion is foaming and an oily nature which makes them incompatible with some agitated processes. Surfactacts also change development speed since they coat photoresist surfaces and inhibit the dissolution reaction. As such exposure-development times must be adjusted and while contrast is improved, resolution may be lost. See here for more in depth discussion: [http://www.lithoguru.com/scientist/litho_tutor/TUTOR09%20(Winter%2095).pdf The Lithography Tutor: Photoresist Development]<br />
<br />
=Addtional Photolithography Resources=<br />
<br />
*[https://cleanroom.byu.edu/processes#Microfab_PhotoLith BYU Photolithography Guide]<br />
<br />
*[https://kayakuam.com/techreferences/lithography-terms/ Lithography Terminology]<br />
<br />
*[https://cleanroom.byu.edu/definitions Lithography Terminology 2]<br />
<br />
*[https://pages.mtu.edu/~microweb/chap1/ch1-4-1.htm Resolution Limits of Photolithography]</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Optical_Lithography_Resources&diff=2073Optical Lithography Resources2019-12-04T16:09:38Z<p>Dvin: /* KNI Photoresists */</p>
<hr />
<div>'''[https://www.microchemicals.com/downloads/application_notes.html Trove of lithography application notes from MicroChemicals covering troubleshooting, procedures, techniques, theory]'''<br />
<br />
=KNI Photoresists=<br />
<br />
Photoresists provided by KNI:<br />
<br />
*'''S1805, 1813, 1818''': field standard positive, may be used for liftoff and withstands some acid etching. Designed with lower toxicity materials. ([https://kayakuam.com/wp-content/uploads/2019/09/S1800-G2.pdf Manufacturer Spec Sheet]) Shipley 1800 series 0.5-1.9μm range available. 0.5-3.2μm available from manufacturer<br />
*'''AZ 5214''': exposable as positive and image reversal negative. Optimized for liftoff processes with negative sidewall profile. Structure is stable to 130°C after postbake. 1-2μm thickness ([https://www.microchemicals.com/micro/tds_az_nlof2000_series.pdf Manufacturer Spec Sheet])<br />
*'''AZ 9245, 9260''': Intended for thick positive structures 4-20μm. Lower optical absorption and sensitivity permits tall structures but development is slow. ([https://www.microchemicals.com/products/photoresists/az_9260.html Produce Page])<br />
*'''AZ nLof 2020, nLof 2035, nLof 2070''': Also optimized for liftoff processes but thicker than 5214 at 2-7μm spinnable. Structures are stable to 250°C. High chemical stability, e-beam exposable, but more difficult to remove.<br />
*'''AZ 3330-F''':<br />
*'''AZ 4620''':<br />
*'''SU-8 2002, SU-8 2025, SU-8 2075, SU-8 2100, SU-8 3025, SU-8 3050''': thick polymer structures. ([https://kayakuam.com/products/su-8-photoresists/ Manufacturer Spec Sheet])<br />
<br />
<br />
<br />
'''''Reminder of lamp intensities:'''''<br />
<br />
'''Suss 1 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 15 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 25 mW/cm2.<br />
'''Suss 2 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 10 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 15 mW/cm2.<br />
<br />
==Positive Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| S1813 || Dehydrate on hot plate || 3000rpm || 1.5μmm || 115C 1min || X || - || - || X || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19 (Link KNI recipe doc here)<br />
|-<br />
| AZ5214 || Dehydrate on hot plate || 3500rpm || 1.4μm || 100C 1min || 25s || - || - || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
==Negative Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | AZ5214 || Dehydrate on hot plate || 2000rpm || 1.8μm || 100C 1min || 12s || 110C 1min || 40s || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|-<br />
| Dehydrate on hot plate || 3500rpm || 1.4μm || 100C 1min || 9s || 110C 1min || 30s || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
==SU-8 Recipes==<br />
<br />
SU-8 is available in thicknesses ranging from 500nm to 500microns. Remember to use Laurel Spinner 1.<br />
<br />
Resist thicknesses currently provided by KNI: 2050, 2005, 2001, 2000.5<br />
<br />
[https://cleanroom.byu.edu/su8 BYU SU-8 Guide]<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| 2050 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
=Other Photoresists=<br />
<br />
*[https://cleanroom.byu.edu/resistmanufacturers BYU Comprehensive list of photoresists]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes UCSB Photoresist Recipes Page 1]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Contact_Alignment_Recipes UCSB Photoresist Recipes Page 2]<br />
<br />
*[https://cleanroom.byu.edu/photoresists BYU Photoresist Recipes]<br />
<br />
==Non-KNI Photoresist Recipes==<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| nLoF 2070 || Dehydrate on hot plate || 2500rpm || 7um || 110C 90s || 12s || 110C 90s || - || AZ 729 2min || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|-<br />
|}<br />
<br />
=KNI Developers=<br />
<br />
Developers provided by KNI:<br />
<br />
*'''AZ 726 MIF''': 2.38% TMAH-based, pre-diluted (ready-to-use) and slightly further diluted only when the application requires it. Contains surfactants to improve development uniformity, so avoid stirring. MIF identifies the developer as 'Metal Ion Free' as it does not contain potassium as in KOH-based developers, it is based on TMAH, an ammonium salt, which prevents metal contamination of semiconductors. 726 is a recommended developer for almost all AZ resists [https://www.microchemicals.com/technical_information/development_photoresist.pdf MicroChemicals Development Application Note]<br />
<br />
*'''Microposit MF 319''': (Metal-Free) TMAH: 2.45%, Polyalkylene glycol <1%, pH: 13. Paired to Shipley/Microposit 1800 series resists, S1805,S1813,S1818 [https://cpb-us-e1.wpmucdn.com/sites.usc.edu/dist/a/194/files/2018/07/MF-319-Developer-1iqbk7y.pdf MSDS]<br />
<br />
*'''Microposit CD-26''': TMAH <5.0 % , pH 13, Also 1800 series targeted, no additional surfactants.<br />
<br />
*'''AZ 400K''': KOH-based. "The recommended dilutions for the AZ® 400 K or AZ® 351 B for most of the processes are developer concentrate : Water = 1: . For very thick resist films, up to a 1:3 ratio can be applied [with lower contrast], with a very fine (sub-µm) structures, a 1:5 or 1:6 ratio can support a high resolution using thin resist films." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note] Users can adjust dilution for accuracy and length of time they will tolerate.<br />
**Critical note on KOH use: "Incompatibilities between MIC and MIF Developers Even small traces of TMAH-based metal ion-free developers such as the AZ® 326 MIF, 726 MIF or 826 MIF) can significantly reduce the development rate of metal ion-containing developers (such as the AZ® 400K or 351B). If both types of developers are used, extremely clean work is to be ensured to prevent mutual contamination even in the ppm range, such as in the dispensing system or developer containers." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note]<br />
<br />
*'''Microposit 2401''': Legacy developer<br />
<br />
===Surfactants===<br />
<br />
Surfactants were developed and added in the 1980s to photoresist developers to combat photoresists' hydrophobic surfaces which cause "hot spots" of fast development. They reduce the surface tension and improve wetting (giving homogeneous development). The common drawback of their inclusion is foaming and an oily nature which makes them incompatible with some agitated processes. Surfactacts also change development speed since they coat photoresist surfaces and inhibit the dissolution reaction. As such exposure-development times must be adjusted and while contrast is improved, resolution may be lost. See here for more in depth discussion: [http://www.lithoguru.com/scientist/litho_tutor/TUTOR09%20(Winter%2095).pdf The Lithography Tutor: Photoresist Development]<br />
<br />
=Addtional Photolithography Resources=<br />
<br />
*[https://cleanroom.byu.edu/processes#Microfab_PhotoLith BYU Photolithography Guide]<br />
<br />
*[https://kayakuam.com/techreferences/lithography-terms/ Lithography Terminology]<br />
<br />
*[https://cleanroom.byu.edu/definitions Lithography Terminology 2]<br />
<br />
*[https://pages.mtu.edu/~microweb/chap1/ch1-4-1.htm Resolution Limits of Photolithography]</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Optical_Lithography_Resources&diff=2072Optical Lithography Resources2019-12-04T15:59:23Z<p>Dvin: /* KNI Photoresists */</p>
<hr />
<div>'''[https://www.microchemicals.com/downloads/application_notes.html Trove of lithography application notes from MicroChemicals covering troubleshooting, procedures, techniques, theory]'''<br />
<br />
=KNI Photoresists=<br />
<br />
Photoresists provided by KNI:<br />
<br />
*'''S1805, 1813, 1818''': field standard positive, may be used for liftoff and withstands some acid etching. Designed with lower toxicity materials. ([https://kayakuam.com/wp-content/uploads/2019/09/S1800-G2.pdf Manufacturer Spec Sheet]) Shipley 1800 series 0.5-1.9μm range available. 0.5-3.2μm available from manufacturer<br />
*'''AZ 5214''': exposable as positive and image reversal negative. Optimized for liftoff processes with negative profile. Structure is stable to 130°C after postbake. ([https://www.microchemicals.com/micro/tds_az_nlof2000_series.pdf Manufacturer Spec Sheet])<br />
*'''AZ 9245, 9260''':<br />
*'''AZ nLof 2020, nLof 2035, nLof 2070''':<br />
*'''AZ 3330-F''':<br />
*'''AZ 4620''':<br />
*'''SU-8 2002, SU-8 2025, SU-8 2075, SU-8 2100, SU-8 3025, SU-8 3050''': thick polymer structures. ([https://kayakuam.com/products/su-8-photoresists/ Manufacturer Spec Sheet])<br />
<br />
<br />
<br />
'''''Reminder of lamp intensities:'''''<br />
<br />
'''Suss 1 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 15 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 25 mW/cm2.<br />
'''Suss 2 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 10 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 15 mW/cm2.<br />
<br />
==Positive Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| S1813 || Dehydrate on hot plate || 3000rpm || 1.5μmm || 115C 1min || X || - || - || X || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19 (Link KNI recipe doc here)<br />
|-<br />
| AZ5214 || Dehydrate on hot plate || 3500rpm || 1.4μm || 100C 1min || 25s || - || - || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
==Negative Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | AZ5214 || Dehydrate on hot plate || 2000rpm || 1.8μm || 100C 1min || 12s || 110C 1min || 40s || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|-<br />
| Dehydrate on hot plate || 3500rpm || 1.4μm || 100C 1min || 9s || 110C 1min || 30s || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
==SU-8 Recipes==<br />
<br />
SU-8 is available in thicknesses ranging from 500nm to 500microns. Remember to use Laurel Spinner 1.<br />
<br />
Resist thicknesses currently provided by KNI: 2050, 2005, 2001, 2000.5<br />
<br />
[https://cleanroom.byu.edu/su8 BYU SU-8 Guide]<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| 2050 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
=Other Photoresists=<br />
<br />
*[https://cleanroom.byu.edu/resistmanufacturers BYU Comprehensive list of photoresists]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes UCSB Photoresist Recipes Page 1]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Contact_Alignment_Recipes UCSB Photoresist Recipes Page 2]<br />
<br />
*[https://cleanroom.byu.edu/photoresists BYU Photoresist Recipes]<br />
<br />
==Non-KNI Photoresist Recipes==<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| nLoF 2070 || Dehydrate on hot plate || 2500rpm || 7um || 110C 90s || 12s || 110C 90s || - || AZ 729 2min || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|-<br />
|}<br />
<br />
=KNI Developers=<br />
<br />
Developers provided by KNI:<br />
<br />
*'''AZ 726 MIF''': 2.38% TMAH-based, pre-diluted (ready-to-use) and slightly further diluted only when the application requires it. Contains surfactants to improve development uniformity, so avoid stirring. MIF identifies the developer as 'Metal Ion Free' as it does not contain potassium as in KOH-based developers, it is based on TMAH, an ammonium salt, which prevents metal contamination of semiconductors. 726 is a recommended developer for almost all AZ resists [https://www.microchemicals.com/technical_information/development_photoresist.pdf MicroChemicals Development Application Note]<br />
<br />
*'''Microposit MF 319''': (Metal-Free) TMAH: 2.45%, Polyalkylene glycol <1%, pH: 13. Paired to Shipley/Microposit 1800 series resists, S1805,S1813,S1818 [https://cpb-us-e1.wpmucdn.com/sites.usc.edu/dist/a/194/files/2018/07/MF-319-Developer-1iqbk7y.pdf MSDS]<br />
<br />
*'''Microposit CD-26''': TMAH <5.0 % , pH 13, Also 1800 series targeted, no additional surfactants.<br />
<br />
*'''AZ 400K''': KOH-based. "The recommended dilutions for the AZ® 400 K or AZ® 351 B for most of the processes are developer concentrate : Water = 1: . For very thick resist films, up to a 1:3 ratio can be applied [with lower contrast], with a very fine (sub-µm) structures, a 1:5 or 1:6 ratio can support a high resolution using thin resist films." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note] Users can adjust dilution for accuracy and length of time they will tolerate.<br />
**Critical note on KOH use: "Incompatibilities between MIC and MIF Developers Even small traces of TMAH-based metal ion-free developers such as the AZ® 326 MIF, 726 MIF or 826 MIF) can significantly reduce the development rate of metal ion-containing developers (such as the AZ® 400K or 351B). If both types of developers are used, extremely clean work is to be ensured to prevent mutual contamination even in the ppm range, such as in the dispensing system or developer containers." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note]<br />
<br />
*'''Microposit 2401''': Legacy developer<br />
<br />
===Surfactants===<br />
<br />
Surfactants were developed and added in the 1980s to photoresist developers to combat photoresists' hydrophobic surfaces which cause "hot spots" of fast development. They reduce the surface tension and improve wetting (giving homogeneous development). The common drawback of their inclusion is foaming and an oily nature which makes them incompatible with some agitated processes. Surfactacts also change development speed since they coat photoresist surfaces and inhibit the dissolution reaction. As such exposure-development times must be adjusted and while contrast is improved, resolution may be lost. See here for more in depth discussion: [http://www.lithoguru.com/scientist/litho_tutor/TUTOR09%20(Winter%2095).pdf The Lithography Tutor: Photoresist Development]<br />
<br />
=Addtional Photolithography Resources=<br />
<br />
*[https://cleanroom.byu.edu/processes#Microfab_PhotoLith BYU Photolithography Guide]<br />
<br />
*[https://kayakuam.com/techreferences/lithography-terms/ Lithography Terminology]<br />
<br />
*[https://cleanroom.byu.edu/definitions Lithography Terminology 2]<br />
<br />
*[https://pages.mtu.edu/~microweb/chap1/ch1-4-1.htm Resolution Limits of Photolithography]</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Optical_Lithography_Resources&diff=2071Optical Lithography Resources2019-12-03T13:02:33Z<p>Dvin: /* Surfactants */</p>
<hr />
<div>'''[https://www.microchemicals.com/downloads/application_notes.html Trove of lithography application notes from MicroChemicals covering troubleshooting, procedures, techniques, theory]'''<br />
<br />
=KNI Photoresists=<br />
<br />
Photoresists provided by KNI:<br />
<br />
*'''S1813,1818''': standard positive, withstands acid etching.([https://kayakuam.com/wp-content/uploads/2019/09/S1800-G2.pdf Manufacturer Spec Sheet]) Shipley 1800 series 0.9-1.9μm range available. 0.5-3.2μm available from manufacturer<br />
*'''AZ5214''': positive and image reversal negative, good for liftoff. ([https://www.microchemicals.com/micro/tds_az_nlof2000_series.pdf Manufacturer Spec Sheet])<br />
*'''SU-8''': thick polymer structures. ([https://kayakuam.com/products/su-8-photoresists/ Manufacturer Spec Sheet])<br />
<br />
<br />
'''''Reminder of lamp intensities:'''''<br />
<br />
'''Suss 1 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 15 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 25 mW/cm2.<br />
'''Suss 2 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 10 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 15 mW/cm2.<br />
<br />
==Positive Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| S1813 || Dehydrate on hot plate || 3000rpm || 1.5μmm || 115C 1min || X || - || - || X || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19 (Link KNI recipe doc here)<br />
|-<br />
| AZ5214 || Dehydrate on hot plate || 3500rpm || 1.4μm || 100C 1min || 25s || - || - || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
==Negative Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | AZ5214 || Dehydrate on hot plate || 2000rpm || 1.8μm || 100C 1min || 12s || 110C 1min || 40s || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|-<br />
| Dehydrate on hot plate || 3500rpm || 1.4μm || 100C 1min || 9s || 110C 1min || 30s || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
==SU-8 Recipes==<br />
<br />
SU-8 is available in thicknesses ranging from 500nm to 500microns. Remember to use Laurel Spinner 1.<br />
<br />
Resist thicknesses currently provided by KNI: 2050, 2005, 2001, 2000.5<br />
<br />
[https://cleanroom.byu.edu/su8 BYU SU-8 Guide]<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| 2050 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
=Other Photoresists=<br />
<br />
*[https://cleanroom.byu.edu/resistmanufacturers BYU Comprehensive list of photoresists]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes UCSB Photoresist Recipes Page 1]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Contact_Alignment_Recipes UCSB Photoresist Recipes Page 2]<br />
<br />
*[https://cleanroom.byu.edu/photoresists BYU Photoresist Recipes]<br />
<br />
==Non-KNI Photoresist Recipes==<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| nLoF 2070 || Dehydrate on hot plate || 2500rpm || 7um || 110C 90s || 12s || 110C 90s || - || AZ 729 2min || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|-<br />
|}<br />
<br />
=KNI Developers=<br />
<br />
Developers provided by KNI:<br />
<br />
*'''AZ 726 MIF''': 2.38% TMAH-based, pre-diluted (ready-to-use) and slightly further diluted only when the application requires it. Contains surfactants to improve development uniformity, so avoid stirring. MIF identifies the developer as 'Metal Ion Free' as it does not contain potassium as in KOH-based developers, it is based on TMAH, an ammonium salt, which prevents metal contamination of semiconductors. 726 is a recommended developer for almost all AZ resists [https://www.microchemicals.com/technical_information/development_photoresist.pdf MicroChemicals Development Application Note]<br />
<br />
*'''Microposit MF 319''': (Metal-Free) TMAH: 2.45%, Polyalkylene glycol <1%, pH: 13. Paired to Shipley/Microposit 1800 series resists, S1805,S1813,S1818 [https://cpb-us-e1.wpmucdn.com/sites.usc.edu/dist/a/194/files/2018/07/MF-319-Developer-1iqbk7y.pdf MSDS]<br />
<br />
*'''Microposit CD-26''': TMAH <5.0 % , pH 13, Also 1800 series targeted, no additional surfactants.<br />
<br />
*'''AZ 400K''': KOH-based. "The recommended dilutions for the AZ® 400 K or AZ® 351 B for most of the processes are developer concentrate : Water = 1: . For very thick resist films, up to a 1:3 ratio can be applied [with lower contrast], with a very fine (sub-µm) structures, a 1:5 or 1:6 ratio can support a high resolution using thin resist films." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note] Users can adjust dilution for accuracy and length of time they will tolerate.<br />
**Critical note on KOH use: "Incompatibilities between MIC and MIF Developers Even small traces of TMAH-based metal ion-free developers such as the AZ® 326 MIF, 726 MIF or 826 MIF) can significantly reduce the development rate of metal ion-containing developers (such as the AZ® 400K or 351B). If both types of developers are used, extremely clean work is to be ensured to prevent mutual contamination even in the ppm range, such as in the dispensing system or developer containers." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note]<br />
<br />
*'''Microposit 2401''': Legacy developer<br />
<br />
===Surfactants===<br />
<br />
Surfactants were developed and added in the 1980s to photoresist developers to combat photoresists' hydrophobic surfaces which cause "hot spots" of fast development. They reduce the surface tension and improve wetting (giving homogeneous development). The common drawback of their inclusion is foaming and an oily nature which makes them incompatible with some agitated processes. Surfactacts also change development speed since they coat photoresist surfaces and inhibit the dissolution reaction. As such exposure-development times must be adjusted and while contrast is improved, resolution may be lost. See here for more in depth discussion: [http://www.lithoguru.com/scientist/litho_tutor/TUTOR09%20(Winter%2095).pdf The Lithography Tutor: Photoresist Development]<br />
<br />
=Addtional Photolithography Resources=<br />
<br />
*[https://cleanroom.byu.edu/processes#Microfab_PhotoLith BYU Photolithography Guide]<br />
<br />
*[https://kayakuam.com/techreferences/lithography-terms/ Lithography Terminology]<br />
<br />
*[https://cleanroom.byu.edu/definitions Lithography Terminology 2]<br />
<br />
*[https://pages.mtu.edu/~microweb/chap1/ch1-4-1.htm Resolution Limits of Photolithography]</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Optical_Lithography_Resources&diff=2070Optical Lithography Resources2019-12-03T13:01:08Z<p>Dvin: /* KNI Developers */</p>
<hr />
<div>'''[https://www.microchemicals.com/downloads/application_notes.html Trove of lithography application notes from MicroChemicals covering troubleshooting, procedures, techniques, theory]'''<br />
<br />
=KNI Photoresists=<br />
<br />
Photoresists provided by KNI:<br />
<br />
*'''S1813,1818''': standard positive, withstands acid etching.([https://kayakuam.com/wp-content/uploads/2019/09/S1800-G2.pdf Manufacturer Spec Sheet]) Shipley 1800 series 0.9-1.9μm range available. 0.5-3.2μm available from manufacturer<br />
*'''AZ5214''': positive and image reversal negative, good for liftoff. ([https://www.microchemicals.com/micro/tds_az_nlof2000_series.pdf Manufacturer Spec Sheet])<br />
*'''SU-8''': thick polymer structures. ([https://kayakuam.com/products/su-8-photoresists/ Manufacturer Spec Sheet])<br />
<br />
<br />
'''''Reminder of lamp intensities:'''''<br />
<br />
'''Suss 1 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 15 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 25 mW/cm2.<br />
'''Suss 2 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 10 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 15 mW/cm2.<br />
<br />
==Positive Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| S1813 || Dehydrate on hot plate || 3000rpm || 1.5μmm || 115C 1min || X || - || - || X || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19 (Link KNI recipe doc here)<br />
|-<br />
| AZ5214 || Dehydrate on hot plate || 3500rpm || 1.4μm || 100C 1min || 25s || - || - || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
==Negative Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | AZ5214 || Dehydrate on hot plate || 2000rpm || 1.8μm || 100C 1min || 12s || 110C 1min || 40s || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|-<br />
| Dehydrate on hot plate || 3500rpm || 1.4μm || 100C 1min || 9s || 110C 1min || 30s || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
==SU-8 Recipes==<br />
<br />
SU-8 is available in thicknesses ranging from 500nm to 500microns. Remember to use Laurel Spinner 1.<br />
<br />
Resist thicknesses currently provided by KNI: 2050, 2005, 2001, 2000.5<br />
<br />
[https://cleanroom.byu.edu/su8 BYU SU-8 Guide]<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| 2050 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
=Other Photoresists=<br />
<br />
*[https://cleanroom.byu.edu/resistmanufacturers BYU Comprehensive list of photoresists]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes UCSB Photoresist Recipes Page 1]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Contact_Alignment_Recipes UCSB Photoresist Recipes Page 2]<br />
<br />
*[https://cleanroom.byu.edu/photoresists BYU Photoresist Recipes]<br />
<br />
==Non-KNI Photoresist Recipes==<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| nLoF 2070 || Dehydrate on hot plate || 2500rpm || 7um || 110C 90s || 12s || 110C 90s || - || AZ 729 2min || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|-<br />
|}<br />
<br />
=KNI Developers=<br />
<br />
Developers provided by KNI:<br />
<br />
*'''AZ 726 MIF''': 2.38% TMAH-based, pre-diluted (ready-to-use) and slightly further diluted only when the application requires it. Contains surfactants to improve development uniformity, so avoid stirring. MIF identifies the developer as 'Metal Ion Free' as it does not contain potassium as in KOH-based developers, it is based on TMAH, an ammonium salt, which prevents metal contamination of semiconductors. 726 is a recommended developer for almost all AZ resists [https://www.microchemicals.com/technical_information/development_photoresist.pdf MicroChemicals Development Application Note]<br />
<br />
*'''Microposit MF 319''': (Metal-Free) TMAH: 2.45%, Polyalkylene glycol <1%, pH: 13. Paired to Shipley/Microposit 1800 series resists, S1805,S1813,S1818 [https://cpb-us-e1.wpmucdn.com/sites.usc.edu/dist/a/194/files/2018/07/MF-319-Developer-1iqbk7y.pdf MSDS]<br />
<br />
*'''Microposit CD-26''': TMAH <5.0 % , pH 13, Also 1800 series targeted, no additional surfactants.<br />
<br />
*'''AZ 400K''': KOH-based. "The recommended dilutions for the AZ® 400 K or AZ® 351 B for most of the processes are developer concentrate : Water = 1: . For very thick resist films, up to a 1:3 ratio can be applied [with lower contrast], with a very fine (sub-µm) structures, a 1:5 or 1:6 ratio can support a high resolution using thin resist films." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note] Users can adjust dilution for accuracy and length of time they will tolerate.<br />
**Critical note on KOH use: "Incompatibilities between MIC and MIF Developers Even small traces of TMAH-based metal ion-free developers such as the AZ® 326 MIF, 726 MIF or 826 MIF) can significantly reduce the development rate of metal ion-containing developers (such as the AZ® 400K or 351B). If both types of developers are used, extremely clean work is to be ensured to prevent mutual contamination even in the ppm range, such as in the dispensing system or developer containers." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note]<br />
<br />
*'''Microposit 2401''': Legacy developer<br />
<br />
===Surfactants===<br />
<br />
Surfactants were developed and added in the 1980s to photoresists to combat their hydrophobic surfaces which cause "hot spots" of fast development. They reduce the surface tension and improve wetting (giving homogeneous development). The common drawback of their inclusion is foaming and an oily nature which makes them incompatible with some agitated processes. Surfactacts also change development speed since they coat photoresist surfaces and inhibit the dissolution reaction. As such exposure-development times must be adjusted and while contrast is improved, resolution may be lost. See here for more in depth discussion: [http://www.lithoguru.com/scientist/litho_tutor/TUTOR09%20(Winter%2095).pdf The Lithography Tutor: Photoresist Development]<br />
<br />
=Addtional Photolithography Resources=<br />
<br />
*[https://cleanroom.byu.edu/processes#Microfab_PhotoLith BYU Photolithography Guide]<br />
<br />
*[https://kayakuam.com/techreferences/lithography-terms/ Lithography Terminology]<br />
<br />
*[https://cleanroom.byu.edu/definitions Lithography Terminology 2]<br />
<br />
*[https://pages.mtu.edu/~microweb/chap1/ch1-4-1.htm Resolution Limits of Photolithography]</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Optical_Lithography_Resources&diff=2069Optical Lithography Resources2019-12-03T13:00:40Z<p>Dvin: /* KNI Developers */</p>
<hr />
<div>'''[https://www.microchemicals.com/downloads/application_notes.html Trove of lithography application notes from MicroChemicals covering troubleshooting, procedures, techniques, theory]'''<br />
<br />
=KNI Photoresists=<br />
<br />
Photoresists provided by KNI:<br />
<br />
*'''S1813,1818''': standard positive, withstands acid etching.([https://kayakuam.com/wp-content/uploads/2019/09/S1800-G2.pdf Manufacturer Spec Sheet]) Shipley 1800 series 0.9-1.9μm range available. 0.5-3.2μm available from manufacturer<br />
*'''AZ5214''': positive and image reversal negative, good for liftoff. ([https://www.microchemicals.com/micro/tds_az_nlof2000_series.pdf Manufacturer Spec Sheet])<br />
*'''SU-8''': thick polymer structures. ([https://kayakuam.com/products/su-8-photoresists/ Manufacturer Spec Sheet])<br />
<br />
<br />
'''''Reminder of lamp intensities:'''''<br />
<br />
'''Suss 1 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 15 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 25 mW/cm2.<br />
'''Suss 2 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 10 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 15 mW/cm2.<br />
<br />
==Positive Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| S1813 || Dehydrate on hot plate || 3000rpm || 1.5μmm || 115C 1min || X || - || - || X || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19 (Link KNI recipe doc here)<br />
|-<br />
| AZ5214 || Dehydrate on hot plate || 3500rpm || 1.4μm || 100C 1min || 25s || - || - || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
==Negative Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | AZ5214 || Dehydrate on hot plate || 2000rpm || 1.8μm || 100C 1min || 12s || 110C 1min || 40s || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|-<br />
| Dehydrate on hot plate || 3500rpm || 1.4μm || 100C 1min || 9s || 110C 1min || 30s || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
==SU-8 Recipes==<br />
<br />
SU-8 is available in thicknesses ranging from 500nm to 500microns. Remember to use Laurel Spinner 1.<br />
<br />
Resist thicknesses currently provided by KNI: 2050, 2005, 2001, 2000.5<br />
<br />
[https://cleanroom.byu.edu/su8 BYU SU-8 Guide]<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| 2050 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
=Other Photoresists=<br />
<br />
*[https://cleanroom.byu.edu/resistmanufacturers BYU Comprehensive list of photoresists]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes UCSB Photoresist Recipes Page 1]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Contact_Alignment_Recipes UCSB Photoresist Recipes Page 2]<br />
<br />
*[https://cleanroom.byu.edu/photoresists BYU Photoresist Recipes]<br />
<br />
==Non-KNI Photoresist Recipes==<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| nLoF 2070 || Dehydrate on hot plate || 2500rpm || 7um || 110C 90s || 12s || 110C 90s || - || AZ 729 2min || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|-<br />
|}<br />
<br />
=KNI Developers=<br />
<br />
Developers provided by KNI:<br />
<br />
*'''AZ 726 MIF''': 2.38% TMAH-based, pre-diluted (ready-to-use) and slightly further diluted only when the application requires it. Contains surfactants to improve development uniformity, so avoid stirring. MIF identifies the developer as 'Metal Ion Free' as it does not contain potassium as in KOH-based developers, it is based on TMAH, an ammonium salt, which prevents metal contamination of semiconductors. 726 is a recommended developer for almost all AZ resists [https://www.microchemicals.com/technical_information/development_photoresist.pdf MicroChemicals Development Application Note]<br />
<br />
*'''Microposit MF 319''': (Metal-Free) TMAH: 2.45%, Polyalkylene glycol <1%, pH: 13. Paired to Shipley/Microposit 1800 series resists, 1805,1813,1818 [https://cpb-us-e1.wpmucdn.com/sites.usc.edu/dist/a/194/files/2018/07/MF-319-Developer-1iqbk7y.pdf MSDS]<br />
<br />
*'''Microposit CD-26''': TMAH <5.0 % , pH 13, Also 1800 series targeted, no additional surfactants.<br />
<br />
*'''AZ 400K''': KOH-based. "The recommended dilutions for the AZ® 400 K or AZ® 351 B for most of the processes are developer concentrate : Water = 1: . For very thick resist films, up to a 1:3 ratio can be applied [with lower contrast], with a very fine (sub-µm) structures, a 1:5 or 1:6 ratio can support a high resolution using thin resist films." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note] Users can adjust dilution for accuracy and length of time they will tolerate.<br />
**Critical note on KOH use: "Incompatibilities between MIC and MIF Developers Even small traces of TMAH-based metal ion-free developers such as the AZ® 326 MIF, 726 MIF or 826 MIF) can significantly reduce the development rate of metal ion-containing developers (such as the AZ® 400K or 351B). If both types of developers are used, extremely clean work is to be ensured to prevent mutual contamination even in the ppm range, such as in the dispensing system or developer containers." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note]<br />
<br />
*'''Microposit 2401''': Legacy developer<br />
<br />
===Surfactants===<br />
<br />
Surfactants were developed and added in the 1980s to photoresists to combat their hydrophobic surfaces which cause "hot spots" of fast development. They reduce the surface tension and improve wetting (giving homogeneous development). The common drawback of their inclusion is foaming and an oily nature which makes them incompatible with some agitated processes. Surfactacts also change development speed since they coat photoresist surfaces and inhibit the dissolution reaction. As such exposure-development times must be adjusted and while contrast is improved, resolution may be lost. See here for more in depth discussion: [http://www.lithoguru.com/scientist/litho_tutor/TUTOR09%20(Winter%2095).pdf The Lithography Tutor: Photoresist Development]<br />
<br />
=Addtional Photolithography Resources=<br />
<br />
*[https://cleanroom.byu.edu/processes#Microfab_PhotoLith BYU Photolithography Guide]<br />
<br />
*[https://kayakuam.com/techreferences/lithography-terms/ Lithography Terminology]<br />
<br />
*[https://cleanroom.byu.edu/definitions Lithography Terminology 2]<br />
<br />
*[https://pages.mtu.edu/~microweb/chap1/ch1-4-1.htm Resolution Limits of Photolithography]</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Optical_Lithography_Resources&diff=2064Optical Lithography Resources2019-12-02T13:04:12Z<p>Dvin: </p>
<hr />
<div>'''[https://www.microchemicals.com/downloads/application_notes.html Trove of lithography application notes from MicroChemicals covering troubleshooting, procedures, techniques, theory]'''<br />
<br />
=KNI Photoresists=<br />
<br />
Photoresists provided by KNI:<br />
<br />
*'''S1813,1818''': standard positive, withstands acid etching.([https://kayakuam.com/wp-content/uploads/2019/09/S1800-G2.pdf Manufacturer Spec Sheet]) Shipley 1800 series 0.9-1.9μm range available. 0.5-3.2μm available from manufacturer<br />
*'''AZ5214''': positive and image reversal negative, good for liftoff. ([https://www.microchemicals.com/micro/tds_az_nlof2000_series.pdf Manufacturer Spec Sheet])<br />
*'''SU-8''': thick polymer structures. ([https://kayakuam.com/products/su-8-photoresists/ Manufacturer Spec Sheet])<br />
<br />
<br />
'''''Reminder of lamp intensities:'''''<br />
<br />
'''Suss 1 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 15 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 25 mW/cm2.<br />
'''Suss 2 Exposure Settings'''<br />
* Channel 1 is 365nm wavelength at 10 mW/cm2.<br />
* Channel 2 is 405nm wavelength at 15 mW/cm2.<br />
<br />
==Positive Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| S1813 || Dehydrate on hot plate || 3000rpm || 1.5μmm || 115C 1min || X || - || - || X || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19 (Link KNI recipe doc here)<br />
|-<br />
| AZ5214 || Dehydrate on hot plate || 3500rpm || 1.4μm || 100C 1min || 25s || - || - || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
==Negative Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | AZ5214 || Dehydrate on hot plate || 2000rpm || 1.8μm || 100C 1min || 12s || 110C 1min || 40s || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|-<br />
| Dehydrate on hot plate || 3500rpm || 1.4μm || 100C 1min || 9s || 110C 1min || 30s || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
==SU-8 Recipes==<br />
<br />
SU-8 is available in thicknesses ranging from 500nm to 500microns. Remember to use Laurel Spinner 1.<br />
<br />
Resist thicknesses currently provided by KNI: 2050, 2005, 2001, 2000.5<br />
<br />
[https://cleanroom.byu.edu/su8 BYU SU-8 Guide]<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| 2050 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
=Other Photoresists=<br />
<br />
*[https://cleanroom.byu.edu/resistmanufacturers BYU Comprehensive list of photoresists]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes UCSB Photoresist Recipes Page 1]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Contact_Alignment_Recipes UCSB Photoresist Recipes Page 2]<br />
<br />
*[https://cleanroom.byu.edu/photoresists BYU Photoresist Recipes]<br />
<br />
==Non-KNI Photoresist Recipes==<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| nLoF 2070 || Dehydrate on hot plate || 2500rpm || 7um || 110C 90s || 12s || 110C 90s || - || AZ 729 2min || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|-<br />
|}<br />
<br />
=KNI Developers=<br />
<br />
Developers provided by KNI:<br />
<br />
*'''AZ 726 MIF''': 2.38% TMAH-based, pre-diluted (ready-to-use) and slightly further diluted only when the application requires it. Contains surfactants to improve development uniformity, so avoid stirring. MIF identifies the developer as 'Metal Ion Free' as it does not contain potassium as in KOH-based developers, it is based on TMAH, an ammonium salt, which prevents metal contaminating semiconductors. 726 is a recommended developer for almost all AZ resists [https://www.microchemicals.com/technical_information/development_photoresist.pdf MicroChemicals Development Application Note]<br />
<br />
*'''Microposit MF 319''': (Metal-Free) TMAH: 2.45%, Polyalkylene glycol <1%, pH: 13. Paired to Shipley/Microposit 1800 series resists, 1805,1813,1818 [https://cpb-us-e1.wpmucdn.com/sites.usc.edu/dist/a/194/files/2018/07/MF-319-Developer-1iqbk7y.pdf MSDS]<br />
<br />
*'''Microposit CD-26''': TMAH <5.0 % , pH 13, Also 1800 series targeted, no additional surfactants.<br />
<br />
*'''AZ 400K''': KOH-based. "The recommended dilutions for the AZ® 400 K or AZ® 351 B for most of the processes are developer concentrate : Water = 1: . For very thick resist films, up to a 1:3 ratio can be applied [with lower contrast], with a very fine (sub-µm) structures, a 1:5 or 1:6 ratio can support a high resolution using thin resist films." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note] Users can adjust dilution for accuracy and length of time they will tolerate.<br />
**Critical note on KOH use: "Incompatibilities between MIC and MIF Developers Even small traces of TMAH-based metal ion-free developers such as the AZ® 326 MIF, 726 MIF or 826 MIF) can significantly reduce the development rate of metal ion-containing developers (such as the AZ® 400K or 351B). If both types of developers are used, extremely clean work is to be ensured to prevent mutual contamination even in the ppm range, such as in the dispensing system or developer containers." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note]<br />
<br />
*'''Microposit 2401''': Legacy developer<br />
<br />
===Surfactants===<br />
<br />
Surfactants were developed and added in the 1980s to photoresists to combat their hydrophobic surfaces which cause "hot spots" of fast development. They reduce the surface tension and improve wetting (giving homogeneous development). The common drawback of their inclusion is foaming and an oily nature which makes them incompatible with some agitated processes. Surfactacts also change development speed since they coat photoresist surfaces and inhibit the dissolution reaction. As such exposure-development times must be adjusted and while contrast is improved, resolution may be lost. See here for more in depth discussion: [http://www.lithoguru.com/scientist/litho_tutor/TUTOR09%20(Winter%2095).pdf The Lithography Tutor: Photoresist Development]<br />
<br />
=Addtional Photolithography Resources=<br />
<br />
*[https://cleanroom.byu.edu/processes#Microfab_PhotoLith BYU Photolithography Guide]<br />
<br />
*[https://kayakuam.com/techreferences/lithography-terms/ Lithography Terminology]<br />
<br />
*[https://cleanroom.byu.edu/definitions Lithography Terminology 2]<br />
<br />
*[https://pages.mtu.edu/~microweb/chap1/ch1-4-1.htm Resolution Limits of Photolithography]</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Optical_Lithography_Resources&diff=2063Optical Lithography Resources2019-12-02T12:45:31Z<p>Dvin: /* Surfactants */</p>
<hr />
<div>'''[https://www.microchemicals.com/downloads/application_notes.html Trove of lithography application notes from MicroChemicals covering troubleshooting, procedures, techniques, theory]'''<br />
<br />
=KNI Photoresists=<br />
<br />
Photoresists provided by KNI:<br />
<br />
*'''S1813,1818''': standard positive, withstands acid etching.([https://kayakuam.com/wp-content/uploads/2019/09/S1800-G2.pdf Manufacturer Spec Sheet]) Shipley 1800 series 0.9-1.9μm range available. 0.5-3.2μm available from manufacturer<br />
*'''AZ5214''': positive and image reversal negative, good for liftoff. ([https://www.microchemicals.com/micro/tds_az_nlof2000_series.pdf Manufacturer Spec Sheet])<br />
*'''SU-8''': thick polymer structures. ([https://kayakuam.com/products/su-8-photoresists/ Manufacturer Spec Sheet])<br />
<br />
==Positive Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| S1813 || Dehydrate on hot plate || 3000rpm || 1.5μmm || 115C 1min || X || - || - || X || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19 (Link KNI recipe doc here)<br />
|-<br />
| AZ5214 || Dehydrate on hot plate || 3500rpm || 1.4μm || 100C 1min || 25s || - || - || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
==Negative Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | AZ5214 || Dehydrate on hot plate || 2000rpm || 1.8μm || 100C 1min || 12s || 110C 1min || 40s || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|-<br />
| Dehydrate on hot plate || 3500rpm || 1.4μm || 100C 1min || 9s || 110C 1min || 30s || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
==SU-8 Recipes==<br />
<br />
SU-8 is available in thicknesses ranging from 500nm to 500microns. Remember to use Laurel Spinner 1.<br />
<br />
Resist thicknesses currently provided by KNI: 2050, 2005, 2001, 2000.5<br />
<br />
[https://cleanroom.byu.edu/su8 BYU SU-8 Guide]<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| 2050 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
=Other Photoresists=<br />
<br />
*[https://cleanroom.byu.edu/resistmanufacturers BYU Comprehensive list of photoresists]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes UCSB Photoresist Recipes Page 1]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Contact_Alignment_Recipes UCSB Photoresist Recipes Page 2]<br />
<br />
*[https://cleanroom.byu.edu/photoresists BYU Photoresist Recipes]<br />
<br />
==Non-KNI Photoresist Recipes==<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| nLoF 2070 || Dehydrate on hot plate || 2500rpm || 7um || 110C 90s || 12s || 110C 90s || - || AZ 729 2min || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|-<br />
|}<br />
<br />
=KNI Developers=<br />
<br />
Developers provided by KNI:<br />
<br />
*'''AZ 726 MIF''': 2.38% TMAH-based, pre-diluted (ready-to-use) and slightly further diluted only when the application requires it. Contains surfactants to improve development uniformity, so avoid stirring. MIF identifies the developer as 'Metal Ion Free' as it does not contain potassium as in KOH-based developers, it is based on TMAH, an ammonium salt, which prevents metal contaminating semiconductors. 726 is a recommended developer for almost all AZ resists [https://www.microchemicals.com/technical_information/development_photoresist.pdf MicroChemicals Development Application Note]<br />
<br />
*'''Microposit MF 319''': (Metal-Free) TMAH: 2.45%, Polyalkylene glycol <1%, pH: 13. Paired to Shipley/Microposit 1800 series resists, 1805,1813,1818 [https://cpb-us-e1.wpmucdn.com/sites.usc.edu/dist/a/194/files/2018/07/MF-319-Developer-1iqbk7y.pdf MSDS]<br />
<br />
*'''Microposit CD-26''': TMAH <5.0 % , pH 13, Also 1800 series targeted, no additional surfactants.<br />
<br />
*'''AZ 400K''': KOH-based. "The recommended dilutions for the AZ® 400 K or AZ® 351 B for most of the processes are developer concentrate : Water = 1: . For very thick resist films, up to a 1:3 ratio can be applied [with lower contrast], with a very fine (sub-µm) structures, a 1:5 or 1:6 ratio can support a high resolution using thin resist films." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note] Users can adjust dilution for accuracy and length of time they will tolerate.<br />
**Critical note on KOH use: "Incompatibilities between MIC and MIF Developers Even small traces of TMAH-based metal ion-free developers such as the AZ® 326 MIF, 726 MIF or 826 MIF) can significantly reduce the development rate of metal ion-containing developers (such as the AZ® 400K or 351B). If both types of developers are used, extremely clean work is to be ensured to prevent mutual contamination even in the ppm range, such as in the dispensing system or developer containers." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note]<br />
<br />
*'''Microposit 2401''': Legacy developer<br />
<br />
===Surfactants===<br />
<br />
Surfactants were developed and added in the 1980s to photoresists to combat their hydrophobic surfaces which cause "hot spots" of fast development. They reduce the surface tension and improve wetting (giving homogeneous development). The common drawback of their inclusion is foaming and an oily nature which makes them incompatible with some agitated processes. Surfactacts also change development speed since they coat photoresist surfaces and inhibit the dissolution reaction. As such exposure-development times must be adjusted and while contrast is improved, resolution may be lost. See here for more in depth discussion: [http://www.lithoguru.com/scientist/litho_tutor/TUTOR09%20(Winter%2095).pdf The Lithography Tutor: Photoresist Development]<br />
<br />
=Addtional Photolithography Resources=<br />
<br />
*[https://cleanroom.byu.edu/processes#Microfab_PhotoLith BYU Photolithography Guide]<br />
<br />
*[https://kayakuam.com/techreferences/lithography-terms/ Lithography Terminology]<br />
<br />
*[https://cleanroom.byu.edu/definitions Lithography Terminology 2]<br />
<br />
*[https://pages.mtu.edu/~microweb/chap1/ch1-4-1.htm Resolution Limits of Photolithography]</div>Dvinhttps://lab.kni.caltech.edu/index.php?title=Optical_Lithography_Resources&diff=2062Optical Lithography Resources2019-12-02T12:44:29Z<p>Dvin: /* KNI Developers */</p>
<hr />
<div>'''[https://www.microchemicals.com/downloads/application_notes.html Trove of lithography application notes from MicroChemicals covering troubleshooting, procedures, techniques, theory]'''<br />
<br />
=KNI Photoresists=<br />
<br />
Photoresists provided by KNI:<br />
<br />
*'''S1813,1818''': standard positive, withstands acid etching.([https://kayakuam.com/wp-content/uploads/2019/09/S1800-G2.pdf Manufacturer Spec Sheet]) Shipley 1800 series 0.9-1.9μm range available. 0.5-3.2μm available from manufacturer<br />
*'''AZ5214''': positive and image reversal negative, good for liftoff. ([https://www.microchemicals.com/micro/tds_az_nlof2000_series.pdf Manufacturer Spec Sheet])<br />
*'''SU-8''': thick polymer structures. ([https://kayakuam.com/products/su-8-photoresists/ Manufacturer Spec Sheet])<br />
<br />
==Positive Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| S1813 || Dehydrate on hot plate || 3000rpm || 1.5μmm || 115C 1min || X || - || - || X || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19 (Link KNI recipe doc here)<br />
|-<br />
| AZ5214 || Dehydrate on hot plate || 3500rpm || 1.4μm || 100C 1min || 25s || - || - || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
==Negative Photoresist Recipes==<br />
<br />
See recipe notes for additional information on wafer cleaning and prep, edge bead removal, and spin curves.<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| rowspan="2" | AZ5214 || Dehydrate on hot plate || 2000rpm || 1.8μm || 100C 1min || 12s || 110C 1min || 40s || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|-<br />
| Dehydrate on hot plate || 3500rpm || 1.4μm || 100C 1min || 9s || 110C 1min || 30s || MF319 60s || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
==SU-8 Recipes==<br />
<br />
SU-8 is available in thicknesses ranging from 500nm to 500microns. Remember to use Laurel Spinner 1.<br />
<br />
Resist thicknesses currently provided by KNI: 2050, 2005, 2001, 2000.5<br />
<br />
[https://cleanroom.byu.edu/su8 BYU SU-8 Guide]<br />
<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| 2050 || Dehydrate on hot plate || 3000rpm || 50μm || 65C 3min 95C 9min || X || 65C 2min 95C 7min || SU-8 Developer X seconds || Optional || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|}<br />
<br />
=Other Photoresists=<br />
<br />
*[https://cleanroom.byu.edu/resistmanufacturers BYU Comprehensive list of photoresists]<br />
<br />
*[https://www.nanotech.ucsb.edu/wiki/index.php/Lithography_Recipes#Photolithography_Recipes UCSB Photoresist Recipes Page 1]<br />
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*[https://www.nanotech.ucsb.edu/wiki/index.php/Contact_Alignment_Recipes UCSB Photoresist Recipes Page 2]<br />
<br />
*[https://cleanroom.byu.edu/photoresists BYU Photoresist Recipes]<br />
<br />
==Non-KNI Photoresist Recipes==<br />
{| class="wikitable sortable" style="text-align: center;"<br />
|-<br />
! Resist !! Wafer Prep !! Spin !! Thickness !! Prebake !! Exposure !! Postbake !! Flood !! Development !! Hardbake !! Lamp !! Notes <br />
|-<br />
| nLoF 2070 || Dehydrate on hot plate || 2500rpm || 7um || 110C 90s || 12s || 110C 90s || - || AZ 729 2min || - || Suss1 Ch1 15mW/cm^2 || Measured 10/19<br />
|-<br />
|}<br />
<br />
=KNI Developers=<br />
<br />
Developers provided by KNI:<br />
<br />
*'''AZ 726 MIF''': 2.38% TMAH-based, pre-diluted (ready-to-use) and slightly further diluted only when the application requires it. Contains surfactants to improve development uniformity, so avoid stirring. MIF identifies the developer as 'Metal Ion Free' as it does not contain potassium as in KOH-based developers, it is based on TMAH, an ammonium salt, which prevents metal contaminating semiconductors. 726 is a recommended developer for almost all AZ resists [https://www.microchemicals.com/technical_information/development_photoresist.pdf MicroChemicals Development Application Note]<br />
<br />
*'''Microposit MF 319''': (Metal-Free) TMAH: 2.45%, Polyalkylene glycol <1%, pH: 13. Paired to Shipley/Microposit 1800 series resists, 1805,1813,1818 [https://cpb-us-e1.wpmucdn.com/sites.usc.edu/dist/a/194/files/2018/07/MF-319-Developer-1iqbk7y.pdf MSDS]<br />
<br />
*'''Microposit CD-26''': TMAH <5.0 % , pH 13, Also 1800 series targeted, no additional surfactants.<br />
<br />
*'''AZ 400K''': KOH-based. "The recommended dilutions for the AZ® 400 K or AZ® 351 B for most of the processes are developer concentrate : Water = 1: . For very thick resist films, up to a 1:3 ratio can be applied [with lower contrast], with a very fine (sub-µm) structures, a 1:5 or 1:6 ratio can support a high resolution using thin resist films." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note] Users can adjust dilution for accuracy and length of time they will tolerate.<br />
**Critical note on KOH use: "Incompatibilities between MIC and MIF Developers Even small traces of TMAH-based metal ion-free developers such as the AZ® 326 MIF, 726 MIF or 826 MIF) can significantly reduce the development rate of metal ion-containing developers (such as the AZ® 400K or 351B). If both types of developers are used, extremely clean work is to be ensured to prevent mutual contamination even in the ppm range, such as in the dispensing system or developer containers." [https://www.microchemicals.com/technical_information/development_photoresist.pdf Ref: MicroChemicals Development Application Note]<br />
<br />
*'''Microposit 2401''': Legacy developer<br />
<br />
===Surfactants===<br />
<br />
Surfactants were developed and added in the 1980s to photoresists to combat their hydrophobic surfaces which cause "hot spots" of fast development. They reduce the surface tension and improve wetting (giving homogeneous development). The common drawback of their inclusion is foaming and an oily nature which makes them incompatible with highly agitated processes. Surfactacts also change development speed since they coat photoresist surfaces and inhibit the dissolution reaction. As such exposure-development times must be adjusted and while contrast is improved, resolution may be lost. See here for more in depth discussion: [http://www.lithoguru.com/scientist/litho_tutor/TUTOR09%20(Winter%2095).pdf The Lithography Tutor: Photoresist Development]<br />
<br />
=Addtional Photolithography Resources=<br />
<br />
*[https://cleanroom.byu.edu/processes#Microfab_PhotoLith BYU Photolithography Guide]<br />
<br />
*[https://kayakuam.com/techreferences/lithography-terms/ Lithography Terminology]<br />
<br />
*[https://cleanroom.byu.edu/definitions Lithography Terminology 2]<br />
<br />
*[https://pages.mtu.edu/~microweb/chap1/ch1-4-1.htm Resolution Limits of Photolithography]</div>Dvin